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1. 发明申请

US20060197951A1 Diffraction order controlled overlay metrology 有权
$Diffraction order controlled overlay metrology$
标题翻译：衍射顺序控制重叠度量
公开(公告)号：US20060197951A1
公开(公告)日：2006-09-07
申请号：US11363755
申请日：2006-02-27
申请人： Aviv Frommer , Vladimir Levinski , Mark Smith , Jeffrey Byers , Chris Mack , Michael Adel
发明人： Aviv Frommer , Vladimir Levinski , Mark Smith , Jeffrey Byers , Chris Mack , Michael Adel
IPC分类号： G01B11/00
CPC分类号： G03F9/7049 , G03F7/70633 , G03F9/7088
摘要： In one embodiment, a system for imaging an acquisition target or an overlay or alignment semiconductor target is disclosed. The system includes a beam generator for directing at least one incident beam having a wavelength λ towards a periodic target having structures with a specific pitch p. A plurality of output beams are scattered from the periodic target in response to the at least one incident beam. The system further includes an imaging lens system for passing only a first and a second output beam from the target. The imaging system is adapted such that the angular separation between the captured beams, λ, and the pitch are selected to cause the first and second output beams to form a sinusoidal image. The system also includes a sensor for imaging the sinusoidal image or images, and a controller for causing the beam generator to direct the at least one incident beam towards the periodic target or targets, and for analyzing the sinusoidal image or images. In one application the detector detects a sinusoidal image of an acquisition target with the same pitch as the designed target and the controller analyzes the pitch of the sinusoidal image compared to design data to determine whether the target has been successfully acquired. In a second application a first and second periodic target that each have a specific pitch p are imaged so that the detector detects a first sinusoidal image of the first target and a second sinusoidal image of the second target and the controller analyzes the first and second sinusoidal image to determine whether the first and second targets have an overlay or alignment error.
摘要翻译：在一个实施例中，公开了一种用于对采集目标或覆盖或对准半导体目标进行成像的系统。该系统包括用于将具有波长λ的至少一个入射光束朝向具有特定间距p的结构的周期性目标引导的光束发生器。响应于至少一个入射光束，多个输出光束从周期性靶标散射。该系统还包括用于仅从目标通过第一和第二输出光束的成像透镜系统。成像系统被适配成使得捕获的光束λ和间距之间的角度间隔被选择为使得第一和第二输出光束形成正弦图像。该系统还包括用于对正弦图像或图像进行成像的传感器，以及控制器，用于使光束发生器将至少一个入射光束引向周期性目标或目标，并用于分析正弦图像或图像。在一个应用中，检测器以与设计目标相同的间距检测采集目标的正弦图像，并且控制器分析与设计数据相比的正弦图像的间距，以确定目标是否已被成功获取。在第二应用中，每个具有特定间距p的第一和第二周期性目标成像，使得检测器检测第一目标的第一正弦图像和第二目标的第二正弦图像，并且控制器分析第一和第二正弦曲线图像以确定第一和第二目标是否具有覆盖或对齐错误。

2. 发明授权

US07684039B2 Overlay metrology using the near infra-red spectral range 有权
标题翻译：使用近红外光谱范围覆盖测量
公开(公告)号：US07684039B2
公开(公告)日：2010-03-23
申请号：US11557880
申请日：2006-11-08
申请人： Michael Adel , Aviv Frommer
发明人： Michael Adel , Aviv Frommer
IPC分类号： G01B11/00
CPC分类号： G01N21/956 , G01N2021/213 , G03F7/70633
摘要： A method and tool for conducting NIR overlay metrology is disclosed. Such methods involve generating a filtered illumination beam including NIR radiation and directing that illumination beam onto an overlay target to produce an optical signal that is detected and used to generate overlay metrology measurements. The method is particularly suited to substrate applications having layers of opaque material that are transmissive in the NIR range (e.g., amorphous carbon) and where NIR imaging is used to obtain overlay measurements. A tool implementation includes a means for generating a filtered illumination beam extending into the NIR range and a detector for receiving NIR signal from an NIR illuminated target and a computer for processing the signal data to obtain overlay metrology measurements.
摘要翻译：公开了一种用于进行NIR重叠测量的方法和工具。这样的方法涉及生成包括NIR辐射的滤波照明光束并将照明光束引导到覆盖目标上以产生被检测并用于生成覆盖度量测量的光信号。该方法特别适用于具有在NIR范围（例如无定形碳）中透射的不透明材料层的衬底应用，并且其中使用NIR成像来获得覆盖测量。工具实现包括用于生成延伸到NIR范围内的滤波照明光束的装置和用于从NIR照明目标接收NIR信号的检测器和用于处理信号数据以获得覆盖度量测量的计算机。

3. 发明申请

US20070187606A1 OVERLAY METROLOGY USING THE NEAR INFRA-RED SPECTRAL RANGE 有权
标题翻译：使用近红外光谱范围的覆盖度量
公开(公告)号：US20070187606A1
公开(公告)日：2007-08-16
申请号：US11557880
申请日：2006-11-08
申请人： Michael Adel , Aviv Frommer
发明人： Michael Adel , Aviv Frommer
IPC分类号： G01N21/35
CPC分类号： G01N21/956 , G01N2021/213 , G03F7/70633
摘要： A method and tool for conducting NIR overlay metrology is disclosed. Such methods involve generating a filtered illumination beam including NIR radiation and directing that illumination beam onto an overlay target to produce an optical signal that is detected and used to generate overlay metrology measurements. The method is particularly suited to substrate applications having layers of opaque material that are transmissive in the NIR range (e.g., amorphous carbon) and where NIR imaging is used to obtain overlay measurements. A tool implementation includes a means for generating a filtered illumination beam extending into the NIR range and a detector for receiving NIR signal from an NIR illuminated target and a computer for processing the signal data to obtain overlay metrology measurements.
摘要翻译：公开了一种用于进行NIR重叠测量的方法和工具。这样的方法涉及生成包括NIR辐射的滤波照明光束并将照明光束引导到覆盖目标上以产生被检测并用于生成覆盖度量测量的光信号。该方法特别适用于具有在NIR范围（例如无定形碳）中透射的不透明材料层的衬底应用，并且其中使用NIR成像来获得覆盖测量。工具实现包括用于生成延伸到NIR范围内的滤波照明光束的装置和用于从NIR照明目标接收NIR信号的检测器和用于处理信号数据以获得覆盖度量测量的计算机。

4. 发明申请

US20070096094A1 Methods and apparatus for designing and using micro-targets in overlay metrology 有权
标题翻译：在重叠计量中设计和使用微观目标的方法和设备
公开(公告)号：US20070096094A1
公开(公告)日：2007-05-03
申请号：US11329716
申请日：2006-01-10
申请人： Vladimir Levinski , Michael Adel , Aviv Frommer , Daniel Kandel
发明人： Vladimir Levinski , Michael Adel , Aviv Frommer , Daniel Kandel
IPC分类号： H01L23/58 , H01L21/66
CPC分类号： H01L23/544 , G03F7/70633 , H01L22/12 , H01L2223/54453 , H01L2223/5448 , H01L2924/0002 , H01L2924/00
摘要： Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.
摘要翻译：用于制造包括几个目标结构的半导体管芯的方法和装置。形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影沿着第二方向的目标结构与第一方向无关。还描述了用于产生校准曲线的目标结构和方法。

5. 发明授权

US09558978B2 Material handling with dedicated automated material handling system 有权
标题翻译：采用专用自动化材料处理系统进行材料处理
公开(公告)号：US09558978B2
公开(公告)日：2017-01-31
申请号：US13874764
申请日：2013-05-01
申请人： Amir Widmann , Michael Adel , Pati Sekula
发明人： Amir Widmann , Michael Adel , Pati Sekula
IPC分类号： H01L21/677
CPC分类号： H01L21/67733 , H01L21/67727 , H01L21/6773 , Y10T29/49826
摘要： An apparatus includes a dedicated material handling module having a dedicated automated material handling system (AMHS) defines a transport route between a first tool and a second tool selected from a plurality of tools in a fabrication facility. The dedicated AMHS is configured to transport wafer carriers between the first tool and the second tool or vice versa independent of a fabrication facility AMHS that is configured to transport wafer carriers among the plurality of tools.
摘要翻译：一种设备包括专用材料处理模块，其具有专用的自动材料处理系统（AMHS），其定义了在制造设备中从多个工具中选择的第一工具和第二工具之间的输送路径。专用AMHS被配置为在第一工具和第二工具之间运输晶片载体，或者反之亦然，而不管制造设备AMHS被配置为在多个工具之间传输晶片载体。

6. 发明申请

US20150075517A1 SYSTEM AND METHOD FOR TEMPERATURE LIMITING IN A SEALED SOLAR ENERGY COLLECTOR 有权
标题翻译：密封太阳能收集器温度限制的系统和方法
公开(公告)号：US20150075517A1
公开(公告)日：2015-03-19
申请号：US14483207
申请日：2014-09-11
申请人： Shimon KLIER , Zvika Klier , Michael Adel , Royi Efron
发明人： Shimon KLIER , Zvika Klier , Michael Adel , Royi Efron
IPC分类号： F24J2/32 , F24J2/44 , F24J2/51
CPC分类号： F24S10/90 , F24S40/55 , F24S80/60 , F24S90/10 , Y02E10/40
摘要： Insulated solar panels that provide a solar thermal collector with means for limiting stagnation temperatures and preventing damage include: temperature limiting is provided by the insulated solar panel, isolating internal components from the environment, using passive closed systems within the sealed solar thermal collector, while also allowing alternative implementations as active systems and/or portions of the temperature limiting system outside the sealed solar thermal collector. A heat pipe can be used as a passive thermal switch, where the temperature induced action at a predetermined temperature causes an abrupt transition from a state of thermal isolation to a state of strong thermal coupling. Additionally, a set of siphon circulation pipes provides a passive closed system for temperature limiting.
摘要翻译：提供太阳能热收集器的绝缘太阳能电池板具有限制停滞温度和防止损坏的手段包括：通过绝缘太阳能电池板提供温度限制，使用密封的太阳能集热器内的被动封闭系统将环境内部组件与环境隔离，同时允许作为活动系统的替代实现和/或密封的太阳能热收集器外部的温度限制系统的部分。热管可以用作被动热开关，其中在预定温度下的温度诱导作用导致从热隔离状态到强热耦合状态的突然转变。此外，一套虹吸循环管道提供了一种用于温度限制的被动封闭系统。

7. 发明授权

US07933016B2 Apparatus and methods for detecting overlay errors using scatterometry 有权
标题翻译：使用散射法检测重叠误差的装置和方法
公开(公告)号：US07933016B2
公开(公告)日：2011-04-26
申请号：US12641663
申请日：2009-12-18
申请人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.
摘要翻译：公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。提供多个目标。每个目标包括第一和第二结构的一部分，并且每个目标被设计成在其第一和第二结构部分之间具有偏移。用电磁辐射照射靶，从而以第一衍射级和+ 1衍射级获得每个靶的光谱。使用基于检测到的光谱的第一结构和第二结构之间是否存在任何覆盖误差（i）对于每个目标，确定第一衍射级和第+第一衍射之间的第一差分强度（ii）对于具有第一目标和第二目标的多对目标对，确定第一目标的第一差分强度与第二目标的第一差分强度之间的第二差分强度，以及（iii）使用基于从每个目标对确定的第二差分强度的散射测量技术来确定第一结构和第二结构之间的任何覆盖误差。

8. 发明申请

US20080316442A1 FEEDFORWARD/FEEDBACK LITHO PROCESS CONTROL OF STRESS AND OVERLAY 有权
标题翻译：反应/反馈LITHO过程控制应力和覆盖
公开(公告)号：US20080316442A1
公开(公告)日：2008-12-25
申请号：US12130699
申请日：2008-05-30
申请人： Michael Adel , John Fielden , Amir Widmann , John Robinson , Dongsub Choi
发明人： Michael Adel , John Fielden , Amir Widmann , John Robinson , Dongsub Choi
IPC分类号： G03B27/68
CPC分类号： G03F7/70258 , G03F7/705 , G03F7/70525 , G03F7/70616 , G03F7/70783
摘要： A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a lithographic patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The lithographic patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables.
摘要翻译：描述了光刻工艺中的工艺控制的方法和装置。在基板上执行光刻图案化处理之前或之后，可以在基板上进行计量。可以基于计量产生光刻图案化过程的一个或多个可校正的方法。可以用可校正的方法来调整在衬底（或随后的衬底）上执行的光刻图案化工艺。

9. 发明申请

US20080094630A1 APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 有权
标题翻译：用于使用散射检测来检测重叠错误的装置和方法
公开(公告)号：US20080094630A1
公开(公告)日：2008-04-24
申请号：US11963730
申请日：2007-12-21
申请人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher Bevis , John Fielden , Noah Bareket , Kenneth Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus Dziura , Mark Ghinovker
发明人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher Bevis , John Fielden , Noah Bareket , Kenneth Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus Dziura , Mark Ghinovker
IPC分类号： G01B11/00 , G01N21/55 , G01B9/02
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.
摘要翻译：公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。在一个实施例中，公开了一种用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的方法。提供了各自包括第一和第二结构的一部分的目标A，B，C和D。目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。偏移量Xa，Xb，Xc和Xd中的每一个优选地不同于零; Xa是相反的符号，不同于Xb; Xc是相反的符号，与Xd不同。目标A，B，C和D用电磁辐射照射，以获得光谱S A，B，C，S和S，分别来自目标A，B，C和D的SUB> D

10. 发明申请

US20080049226A1 APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 有权
标题翻译：用于使用散射检测来检测重叠错误的装置和方法
公开(公告)号：US20080049226A1
公开(公告)日：2008-02-28
申请号：US11926603
申请日：2007-10-29
申请人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant
发明人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclose is a combined scatterometry mark comprising a scatterometry critical dimension (CD) or profile target capable of being measured to determine CD or profile information and a scatterometry overlay target disposed over the scatterometry CD or profile target, the scatterometry overlay target cooperating with the scatterometry CD or profile target to form a scatterometry mark capable of being measured to determine overlay.
摘要翻译： Disclose是一个组合的散点图标记，包括能够被测量以确定CD或轮廓信息的散射关键维度（CD）或轮廓目标，以及布置在散射测量CD或轮廓目标上的散射测绘覆盖目标，散射测绘覆盖目标与散射光谱CD协调或轮廓目标以形成能够被测量以确定覆盖的散射测量标记。

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