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1. 发明授权

US10027282B2 Integrated circuit 有权
公开(公告)号：US10027282B2
公开(公告)日：2018-07-17
申请号：US15387755
申请日：2016-12-22
申请人： Mitsubishi Electric Corporation
发明人： Takumi Sugitani , Hitoshi Kurusu
IPC分类号： H03F1/02 , H01L23/00 , H03F3/195 , H03F3/45 , H03F1/08 , H03F3/187
摘要： According to the present invention, an integrated circuit includes a first amplifier stage, a second amplifier stage, a first signal line connecting an output of the first amplifier stage and an input of the second amplifier stage to each other, a first plane for ground connected to the first amplifier stage, a second plane for ground connected to the second amplifier stage and at least one at least one line for ground connecting the first plane and the second plane to each other, wherein the at least one line has a center line having a length of 10 μm to 1 mm, a width of the at least one line is ⅓ or less of a width of the first plane, and a pattern ratio is 1 or more.

2. 发明授权

US11012036B2 Current reuse type field effect transistor amplifier 有权
公开(公告)号：US11012036B2
公开(公告)日：2021-05-18
申请号：US16481024
申请日：2017-03-28
申请人： Mitsubishi Electric Corporation
发明人： Hitoshi Kurusu
IPC分类号： H03F1/02 , H03F1/34 , H03F3/213 , H03F3/60 , G01S7/03
摘要： A current reuse type FET amplifier according to the present invention has a capacitance provided between a drain of a first FET in a first stage and a gate of a second FET in a next stage, electrically separates a gate voltage of the second FET from a drain voltage of the first FET, and includes a control circuit controlling the gate voltage of the first FET and the gate voltage of the second FET so that a variation of a drain current of the second FET and a variation of a drain voltage of the first FET are reduced in accordance with a variation of a saturation current Idss of the FET. Furthermore, the current reuse type FET amplifier according to the present invention uses only a depression mode FET to provide a circuit configuration operable with a positive single power source.

3. 发明授权

US09882551B2 Frequency multiplier 有权
公开(公告)号：US09882551B2
公开(公告)日：2018-01-30
申请号：US15231053
申请日：2016-08-08
申请人： Mitsubishi Electric Corporation
发明人： Hitoshi Kurusu , Takumi Sugitani
IPC分类号： H03B19/00 , H03K5/00 , H03H11/30
CPC分类号： H03K5/00006 , H03H11/30
摘要： A frequency includes an input terminal, an output terminal, a transistor having a gate terminal which receives input of a signal including a first frequency from the input terminal, a source terminal and a drain terminal connected to the output terminal by a main line, an output matching circuit provided in the main line, the output matching circuit shutting off the first frequency while allowing an output frequency multiplied from the first frequency to pass therethrough, a branch line including a power supply terminal for connection to a power supply, the branch line branching off from a branch point in the main line, and a first diode provided in the branch line, the first diode having an anode connected to the power supply terminal and a cathode connected on the branch point side.

4. 发明授权

US09553568B2 Frequency multiplier 有权
标题翻译：倍频器
公开(公告)号：US09553568B2
公开(公告)日：2017-01-24
申请号：US14925344
申请日：2015-10-28
申请人： Mitsubishi Electric Corporation
发明人： Hitoshi Kurusu , Yoshihiro Tsukahara
IPC分类号： G06G7/16 , H03B19/10 , H03B19/14 , H03K5/00
CPC分类号： H03K5/00006 , G06G7/16 , H03B19/10 , H03B19/14
摘要： A frequency multiplier includes an input terminal, an output terminal, a first transistor having a first gate to which a radiofrequency signal is input from the input terminal, a first drain from which an output signal is issued to the output terminal, and a first source, a second transistor having a second gate, a second source to which the radiofrequency signal is input from the input terminal, and a second drain from which an output signal is issued to the output terminal, and a stabilizing resistor which is a resistor connected to the second gate, wherein no resistor exists on the path for the radiofrequency signal, and wherein the stabilizing resistor suppresses a reflex gain produced by the second transistor.
摘要翻译：倍频器包括输入端子，输出端子，具有从输入端子输入射频信号的第一栅极的第一晶体管，向输出端子发出输出信号的第一漏极，以及第一源极，具有第二栅极的第二晶体管，从输入端子输入射频信号的第二源极和向输出端子发出输出信号的第二漏极，以及稳定电阻器，其是连接到所述第二栅极，其中在所述射频信号的路径上不存在电阻器，并且其中所述稳定电阻器抑制由所述第二晶体管产生的反射增益。

5. 发明授权

US11088074B2 Semiconductor device and method for manufacturing same 有权
公开(公告)号：US11088074B2
公开(公告)日：2021-08-10
申请号：US16472559
申请日：2017-04-04
申请人： Mitsubishi Electric Corporation
发明人： Kazuhiro Maeda , Takayuki Hisaka , Hitoshi Kurusu
IPC分类号： H01L23/528 , H01L23/31 , H01L23/522 , H01L23/482 , H01L29/417 , H01L29/423 , H01L29/778 , H01L21/768 , H01L21/764
摘要： A multi-finger transistor including plural control electrodes (2), plural first electrodes (3), and plural second electrodes (4) is provided on a semiconductor substrate (1). A resin film (14,15) covers the transistor. A first wiring (8) electrically connecting the plural first electrodes (3) to one other is provided on the resin film (14,15). The resin film (14,15) covers contact portions between the first wiring (8) and the plural first electrodes (3). A first hollow structure (16) sealed with the resin film (14,15) is provided around the plural control electrodes (2) and the plural second electrodes (4).

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