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1. 发明申请

US20130059076A1 SUBSTRATE TREATMENT APPARATUS AND METHOD FOR MANUFACTURING THIN FILM 有权
标题翻译：基板处理装置和制造薄膜的方法
公开(公告)号：US20130059076A1
公开(公告)日：2013-03-07
申请号：US13643873
申请日：2010-04-28
申请人： Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
发明人： Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
IPC分类号： B05C11/08 , B05D3/12
CPC分类号： H01L21/67017 , B05C11/023 , B05C11/08 , B05D1/005 , B05D3/0486 , H01L21/02197 , H01L21/02282 , H01L21/6715 , H01L21/67196 , H01L21/67207
摘要： To provide a substrate treatment apparatus capable of suppressing adherence of dust to a film coated on a substrate. As an aspect of the present invention is a substrate treatment apparatus provided with a spin-coating treatment chamber 4a for coating a film on the substrate by spin-coating, a first air-conditioning mechanism that regulates an amount of dust in the air in the spin-coating treatment chamber, an annealing treatment chamber 7a for performing lamp annealing treatment on the film coated on the substrate, a conveying chamber 2a that is connected to each of the spin-coating treatment chamber and the annealing treatment chamber and is for conveying the substrate between the spin-coating treatment chamber and the annealing treatment chamber each other, and a second air-conditioning mechanism that regulate an amount of dust in the air in the conveying chamber.
摘要翻译：提供能够抑制灰尘对涂布在基材上的膜的粘附性的基板处理装置。作为本发明的一个方面，提供一种基板处理装置，该基板处理装置具有旋转涂布处理室4a，用于通过旋转涂布在基板上涂覆膜;第一空调机构，其调节空气中的灰尘量旋涂处理室，对涂布在基板上的膜进行灯退火处理的退火处理室7a，与旋涂处理室和退火处理室连接的输送室2a，旋转涂布处理室和退火处理室之间的基板，以及调节输送室中的空气中的灰尘量的第二空调机构。

2. 发明授权

US09171745B2 Substrate treatment apparatus and method for manufacturing thin film 有权
标题翻译：基板处理装置及薄膜制造方法
公开(公告)号：US09171745B2
公开(公告)日：2015-10-27
申请号：US13643873
申请日：2010-04-28
申请人： Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
发明人： Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
IPC分类号： B05C11/08 , B05D3/12 , H01L21/67 , B05C11/02 , H01L21/02 , B05D3/04 , B05D1/00
CPC分类号： H01L21/67017 , B05C11/023 , B05C11/08 , B05D1/005 , B05D3/0486 , H01L21/02197 , H01L21/02282 , H01L21/6715 , H01L21/67196 , H01L21/67207
摘要： To provide a substrate treatment apparatus capable of suppressing adherence of dust to a film coated on a substrate. As an aspect of the present invention is a substrate treatment apparatus provided with a spin-coating treatment chamber 4a for coating a film on the substrate by spin-coating, a first air-conditioning mechanism that regulates an amount of dust in the air in the spin-coating treatment chamber, an annealing treatment chamber 7a for performing lamp annealing treatment on the film coated on the substrate, a conveying chamber 2a that is connected to each of the spin-coating treatment chamber and the annealing treatment chamber and is for conveying the substrate between the spin-coating treatment chamber and the annealing treatment chamber each other, and a second air-conditioning mechanism that regulate an amount of dust in the air in the conveying chamber.
摘要翻译：提供能够抑制灰尘对涂布在基材上的膜的粘附性的基板处理装置。作为本发明的一个方面，提供一种基板处理装置，该基板处理装置具有旋转涂布处理室4a，用于通过旋转涂布在基板上涂覆膜;第一空调机构，其调节空气中的灰尘量旋涂处理室，对涂布在基板上的膜进行灯退火处理的退火处理室7a，与旋涂处理室和退火处理室连接的输送室2a，旋转涂布处理室和退火处理室之间的基板，以及调节输送室中的空气中的灰尘量的第二空调机构。

3. 发明申请

US20130026152A1 PRESSURIZING-TYPE LAMP ANNEALING DEVICE, METHOD FOR PRODUCING THIN FILM, AND METHOD FOR USING PRESSURIZING-TYPE LAMP ANNEALING DEVICE 有权
标题翻译：压力型灯泡退火装置，薄膜生产方法，以及使用加压型灯具退火装置的方法
公开(公告)号：US20130026152A1
公开(公告)日：2013-01-31
申请号：US13579394
申请日：2010-08-02
申请人： Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
发明人： Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
IPC分类号： H01L21/26 , H05B6/00
CPC分类号： H01L21/67115 , H01L21/02197 , H01L21/02337 , H01L21/02356 , H01L21/324
摘要： Provided is a pressurizing-type lamp annealing device which can easily handle a substrate to be treated having a large surface area. An embodiment is a pressurizing-type lamp annealing device which includes: a treatment chamber 25; a holding part 23 disposed into the treatment chamber to hold a substrate to be treated 22; a gas-introduction mechanism for introducing a pressurized gas into the treatment chamber; a gas-discharge mechanism for discharging the gas in the treatment chamber; a transparent tube 20 disposed into the treatment chamber; and a lamp heater 19 placed in the treatment chamber to irradiate the substrate to be treated with a lamp light, through the transparent tube.
摘要翻译：提供一种可以容易地处理具有大表面积的待处理基板的加压型灯退火装置。一个实施例是一种加压型灯退火装置，包括：处理室25; 设置在处理室中以保持要处理的基板22的保持部23; 用于将加压气体引入处理室的气体导入机构; 用于排出处理室中的气体的气体排出机构; 设置在处理室中的透明管20; 以及放置在处理室中的灯加热器19，以通过透明管照射待处理的基板。

4. 发明授权

US09966283B2 Pressurizing-type lamp annealing device, method for producing thin film, and method for using pressurizing-type lamp annealing device 有权
公开(公告)号：US09966283B2
公开(公告)日：2018-05-08
申请号：US13579394
申请日：2010-08-02
申请人： Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
发明人： Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
IPC分类号： H05B3/02 , H01L21/67 , H01L21/02 , H01L21/324
CPC分类号： H01L21/67115 , H01L21/02197 , H01L21/02337 , H01L21/02356 , H01L21/324
摘要： A pressurizing-type lamp annealing device which can easily handle a substrate to be treated having a large surface area. An embodiment of the pressurizing-type lamp annealing device includes: a treatment chamber (25); a holding part (23) disposed in the treatment chamber to hold a substrate to be treated; a gas-introduction mechanism for introducing a pressurized gas into the treatment chamber; a gas-discharge mechanism for discharging the gas in the treatment chamber; a transparent tube (20) disposed in the treatment chamber; and a lamp heater (19) placed in the treatment chamber to irradiate the substrate with a lamp light through the transparent tube.

5. 发明授权

US07678241B2 Film forming apparatus, substrate for forming oxide thin film and production method thereof 有权
标题翻译：成膜装置，用于形成氧化物薄膜的基板及其制造方法
公开(公告)号：US07678241B2
公开(公告)日：2010-03-16
申请号：US11071116
申请日：2005-03-04
申请人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
发明人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
IPC分类号： C23C14/34
CPC分类号： C23C14/568 , C23C14/505
摘要： The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.
摘要翻译：本发明提供一种成膜装置，其能够在相同的室中依次用两种成膜机构形成膜。根据本发明的成膜装置包括设置在成膜室内的一侧的Pt靶，向Pt靶供给的溅射输出机构，设置在成膜室内的另一侧的Pt蒸镀源，蒸镀输出机构，供给Pt蒸镀源，设置在成膜室内的Pt靶和Pt蒸镀源之间的基板保持架，安装基板;旋转机构，使基板保持架移动，使基板指向Pt靶或Pt气相沉积源，当衬底经受溅射膜形成时加热衬底的加热机构，以及当衬底经历气相沉积膜形成时冷却衬底的冷却机构。

6. 发明申请

US20050148200A1 Film forming apparatus, substrate for forming oxide thin film and production method thereof 有权
标题翻译：成膜装置，用于形成氧化物薄膜的基板及其制造方法
公开(公告)号：US20050148200A1
公开(公告)日：2005-07-07
申请号：US11071116
申请日：2005-03-04
申请人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
发明人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
IPC分类号： C23C14/22 , C23C14/50 , C23C14/56 , H01L21/285 , H01L29/04 , H01L21/31 , H01L31/036
CPC分类号： C23C14/568 , C23C14/505
摘要： The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.
摘要翻译：本发明提供一种成膜装置，其能够在相同的室中依次用两种成膜机构形成膜。根据本发明的成膜装置包括设置在成膜室内的一侧的Pt靶，向Pt靶供给的溅射输出机构，设置在成膜室内的另一侧的Pt蒸镀源，蒸镀输出机构，供给Pt蒸镀源，设置在成膜室内的Pt靶和Pt蒸镀源之间的基板保持架，安装基板;旋转机构，使基板保持架移动，使基板指向Pt靶或Pt气相沉积源，当衬底经受溅射膜形成时加热衬底的加热机构，以及当衬底经历气相沉积膜形成时冷却衬底的冷却机构。

7. 发明授权

US07077911B2 MOCVD apparatus and MOCVD method 有权
标题翻译： MOCVD装置和MOCVD方法
公开(公告)号：US07077911B2
公开(公告)日：2006-07-18
申请号：US10376276
申请日：2003-03-03
申请人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
发明人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： C23C16/45508 , C23C16/455
摘要： The invention provides an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by reducing or preventing temperature decrease of a source gas. An MOCVD apparatus according to the present invention supplies a source gas, as a mixture of an MO source gas, with an oxidizing gas to a substrate to thereby form a film. The MOCVD apparatus includes a substrate holder to hold the substrate; a deposition chamber to house the substrate holder; a supply mechanism to supply the source gas to a surface of the substrate; and a heating device to heat the substrate held by the substrate holder. The deposition chamber includes a substrate housing unit to house the substrate holder holding the substrate, and a passage housing unit connected to the substrate housing unit and constituting a passage to supply the source gas to the substrate. The passage has a cross-sectional area that is smaller than the area of a deposition plane of the substrate when the passage housing unit is cut in parallel with the deposition plane of the substrate.
摘要翻译：本发明提供一种MOCVD装置和MOCVD方法，其可以通过减少或防止源气体的温度降低来沉积具有令人满意的性能的薄膜。根据本发明的MOCVD装置将作为MO源气体的混合物的源气体与氧化气体一起提供给基板，从而形成膜。 MOCVD装置包括用于保持基板的基板支架; 沉积室，用于容纳衬底保持器; 供应机构，用于将源气体供应到衬底的表面; 以及加热装置，用于加热由基板保持器保持的基板。沉积室包括用于容纳保持基板的基板保持器的基板容纳单元，以及连接到基板容纳单元并构成将源气体供应到基板的通道的通道容纳单元。当通道容纳单元与基板的沉积平面平行地切割时，通道的横截面面积小于基板的沉积平面的面积。

8. 发明授权

US07074548B2 Apparatus and method for forming thin-film 有权
标题翻译：用于形成薄膜的设备和方法
公开(公告)号：US07074548B2
公开(公告)日：2006-07-11
申请号：US10376253
申请日：2003-03-03
申请人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
发明人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
IPC分类号： B05D3/00 , B05D3/06
CPC分类号： C23C18/1216 , B01J3/008 , B01J19/0013 , B01J19/123 , B01J19/125 , B01J19/1887 , B01J2219/00058 , B05D1/025 , B05D2401/90 , C23C18/12 , C23C18/1283 , C23C18/1287 , C23C18/14 , Y02P20/544
摘要： A method of forming a thin-film including a capability to remove contaminants from the formed thin-film and/or a substrate on which the thin-film is formed using alcohol. The method includes allowing a substrate holder to support a substract. A first mixture is produced by mixing a condensation polymer containing an element of metal oxide compound and alcohol. Then second mixture is produced by mixing supercritical fluid or liquid carbon dioxide and the first mixture. A thin film is formed by applying the second mixture on a surface of the substrate. After forming the thin-film, the substrate is cleaned by applying alcohol to upper and lower surfaces, preferably the whole upper and lower surfaces, of the substract. The thin-film is crystallized by heating, and the crystallizing may include applying oxygen in a crystallizing chamber. Soft X-rays may be applied to the substrate, during the forming of the thin-film on the surface of the substrate.
摘要翻译：一种形成薄膜的方法，该薄膜包括从形成的薄膜和/或使用酒精形成薄膜的基板去除污染物的能力。该方法包括允许衬底保持器支撑减法。通过混合含有金属氧化物和醇的元素的缩聚物来制备第一混合物。然后通过混合超临界流体或液体二氧化碳和第一混合物产生第二混合物。通过将第二混合物施加到基板的表面上来形成薄膜。在形成薄膜之后，通过将酒精施加到底部的上表面和下表面，优选整个上表面和下表面来清洁基底。薄膜通过加热结晶，结晶可以包括在结晶室中施加氧气。在衬底表面形成薄膜期间，可以将软X射线施加到衬底上。

9. 发明申请

US20050172895A1 MOCVD apparatus and MOCVD method 有权
标题翻译： MOCVD装置和MOCVD方法
公开(公告)号：US20050172895A1
公开(公告)日：2005-08-11
申请号：US10376276
申请日：2003-03-03
申请人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
发明人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455
CPC分类号： C23C16/45508 , C23C16/455
摘要： [Object] To provide an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by preventing temperature decrease of a source gas. [Solving Means] An MOCVD apparatus according to the present invention is an apparatus for supplying a source gas as a mixture of an MO source gas with an oxidizing gas to a substrate 13 to thereby form a film. The MOCVD apparatus includes a substrate holder 14 for holding the substrate 13; a deposition chamber for housing the substrate holder; a supply mechanism for supplying the source gas to a surface of the substrate; and a heating device for heating the substrate 13 held by the substrate holder. The deposition chamber includes a substrate housing unit for housing the substrate holder holding the substrate, and a passage housing unit being connected to the substrate housing unit and constituting a passage for supplying the source gas to the substrate. The passage has a cross-sectional area smaller than the area of a deposition plane of the substrate 13 when the passage housing unit is cut in parallel with the deposition plane of the substrate 13.
摘要翻译：本发明提供一种能够通过防止源气体的温度降低而沉积具有令人满意的特性的薄膜的MOCVD装置和MOCVD方法。本发明的MOCVD装置是将MO源气体与氧化性气体的混合物的源气体供给到基板13，从而形成膜的装置。 MOCVD装置包括用于保持基板13的基板支架14; 用于容纳衬底保持器的沉积室; 用于将源气体供给到基板的表面的供给机构; 以及用于加热由基板保持器保持的基板13的加热装置。沉积室包括用于容纳保持基板的基板保持架的基板收纳单元，以及与基板收纳单元连接并构成用于将源气体供应到基板的通道的通道收纳单元。当通道容纳单元与基板13的沉积平面平行地切割时，通道的横截面面积小于基板13的沉积平面的面积。

10. 发明授权

US06913675B2 Film forming apparatus, substrate for forming oxide thin film, and production method thereof 有权
标题翻译：成膜装置，氧化物薄膜形成用基板及其制造方法
公开(公告)号：US06913675B2
公开(公告)日：2005-07-05
申请号：US10376594
申请日：2003-03-03
申请人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
发明人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
IPC分类号： C23C14/22 , C23C14/50 , C23C14/56 , H01L21/285 , C23C14/34
CPC分类号： C23C14/568 , C23C14/505
摘要： The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber.The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supplying to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.
摘要翻译：本发明提供一种成膜装置，其能够在相同的室中依次用两种成膜机构形成膜。根据本发明的成膜装置包括设置在成膜室内的一侧的Pt靶，向Pt靶供给溅射输出机构，设置在成膜室内的另一侧的Pt蒸镀源，气相沉积输出机构供应到Pt蒸镀源，设置在成膜室内的Pt靶和Pt蒸镀源之间以安装基板的基板保持架，用于移动基板保持件的旋转机构，使得基板引导 Pt靶或Pt蒸镀源时，在对基板进行溅射成膜时加热基板的加热机构，以及当基板进行蒸镀膜形成时冷却基板的冷却机构。

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