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1. 发明授权

US08527581B2 Apparatus and method for synchronizing E-book content with video content and system thereof 有权
公开(公告)号：US08527581B2
公开(公告)日：2013-09-03
申请号：US12915450
申请日：2010-10-29
申请人： Myoung-Jong Song , Myung-Jin Eom , Ik-Soo Kim
发明人： Myoung-Jong Song , Myung-Jin Eom , Ik-Soo Kim
IPC分类号： G06F15/16
CPC分类号： H04L67/02 , G06F3/1431 , G06F3/147 , G06F15/0291 , G09G2370/027 , G09G2380/14 , H04L65/4015 , H04L67/14 , H04N21/4307
摘要： A method of synchronizing a first device capable of displaying video content and including the video content, and a second device capable of displaying E-book content associated with the video content and including the E-book content. The first device is connected to the second device according to a specific protocol. In response to a specific event for the video content or the E-book content occurring in one of the first and second devices, the device in which the specific event occurs generates event information about the specific event and transmits it to the other of the first and second devices, and performs the specific event according to the event information. Upon receiving the event information, the other of the first and second devices performs the specific event according to the received event information in synchronization with the device in which the specific event occurred, using synchronization information between the video content and the E-book content.

2. 发明授权

US09613384B2 Personal learning apparatus and method based on wireless communication network 有权
公开(公告)号：US09613384B2
公开(公告)日：2017-04-04
申请号：US12916987
申请日：2010-11-01
申请人： Myung-Jin Eom , Myoung-Jong Song , Ik-Soo Kim
发明人： Myung-Jin Eom , Myoung-Jong Song , Ik-Soo Kim
IPC分类号： G09B3/00 , G06Q50/20 , G06Q10/10
CPC分类号： G06Q50/20 , G06Q10/10
摘要： A personal learning apparatus and method using a terminal which supports an electronic book function in a wireless communication network are provided. The personal learning method includes: distributing, by a master device, learning data to the terminal within a wireless communication service area; collecting, by the master device, learning results based on the learning data from the terminal provided with the learning data; and storing, by the master device, the collected learning results.

3. 发明授权

US08644062B2 Multi-level memory device using resistance material 有权
标题翻译：使用电阻材料的多级存储器件
公开(公告)号：US08644062B2
公开(公告)日：2014-02-04
申请号：US12819498
申请日：2010-06-21
申请人： Ik-Soo Kim , Sung-Lae Cho , Do-Hyung Kim , Hyeong-Geun An , Dong-Hyun Im , Eun-Hee Cho
发明人： Ik-Soo Kim , Sung-Lae Cho , Do-Hyung Kim , Hyeong-Geun An , Dong-Hyun Im , Eun-Hee Cho
IPC分类号： G11C11/00
CPC分类号： G11C11/5685 , G11C8/08 , G11C11/5678 , G11C13/0004 , G11C13/0007 , G11C13/0061 , G11C13/0069 , G11C2013/009 , G11C2013/0092 , G11C2213/72 , H01L27/101 , H01L27/1021
摘要： A multi-level memory device includes an insulating layer having an opening therein, and a multi-level cell (MLC) formed in the opening that has a resistance level varies based on the data stored therein. The MLC is configured to have a resistance level that varies as write pulses having the same pulse height and different pulse widths are applied to the MLC.
摘要翻译：多级存储器件包括其中具有开口的绝缘层，并且形成在开口中的具有电阻电平的多电平单元（MLC）基于存储在其中的数据而变化。 MLC被配置为具有随着具有相同脉冲高度和不同脉冲宽度的写入脉冲被施加到MLC而变化的电阻电平。

4. 发明申请

US20120040508A1 Method of Forming Semiconductor Device Having Self-Aligned Plug 有权
标题翻译：形成具有自对准插头的半导体器件的方法
公开(公告)号：US20120040508A1
公开(公告)日：2012-02-16
申请号：US13188981
申请日：2011-07-22
申请人： Gyu-Hwan Oh , Sung-Lae Cho , Byoung-Jae Bae , Ik-Soo Kim , Dong-Hyun Im , Doo-Hwan Park , Kyoung-Ha Eom , Sung-Un Kwon , Chul-Ho Shin , Sang-Sup Jeong
发明人： Gyu-Hwan Oh , Sung-Lae Cho , Byoung-Jae Bae , Ik-Soo Kim , Dong-Hyun Im , Doo-Hwan Park , Kyoung-Ha Eom , Sung-Un Kwon , Chul-Ho Shin , Sang-Sup Jeong
IPC分类号： H01L47/00
CPC分类号： H01L45/1683 , H01L27/2463 , H01L45/06
摘要： A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.
摘要翻译：形成基板上的导电图案。形成具有露出导电图案的开口的绝缘层。底部电极形成在导电图案和开口的第一侧壁上。在底部电极和开口的第二侧壁上形成间隔物。间隔件和底部电极形成为低于绝缘层的顶表面。数据存储插头形成在底部电极和间隔件上。数据存储插头具有与底部电极的侧壁对准的第一侧壁和与间隔件的侧壁对准的第二侧壁。在数据存储插头上形成位线。

5. 发明授权

US07480024B2 Method for fabricating an array substrate for IPS mode liquid crystal display device 有权
标题翻译： IPS模式液晶显示装置用阵列基板的制造方法
公开(公告)号：US07480024B2
公开(公告)日：2009-01-20
申请号：US11341598
申请日：2006-01-30
申请人： Ik-Soo Kim , Gee-Sung Chae
发明人： Ik-Soo Kim , Gee-Sung Chae
IPC分类号： G02F1/1343
CPC分类号： G02F1/136213 , G02F1/134363
摘要： An array substrate for in-plane switching (IPS) mode liquid crystal display (LCD) device includes a pixel electrode having an extension portion, a vertical portion and a horizontal portion, the extension portion being extended from the drain electrode to the pixel region, the vertical portion being vertically extended from the extension portion and the horizontal portion being over the common line and being connected to the vertical portion. The device includes a common electrode having a plurality of vertical portions and a horizontal portion, the plurality of the vertical portions being vertically extended from the common line and arranged in an alternating pattern with the vertical portion of the pixel electrode, the horizontal portion connecting the plurality of the vertical portions into one. An auxiliary line is over the horizontal portion of the pixel electrode and being overlapped with the common line.
摘要翻译：用于面内切换（IPS）模式液晶显示（LCD）装置的阵列基板包括具有延伸部分，垂直部分和水平部分的像素电极，该延伸部分从漏电极延伸到像素区域，所述垂直部分从所述延伸部分垂直延伸，并且所述水平部分在所述公共线上方并且连接到所述垂直部分。该装置包括具有多个垂直部分和水平部分的公共电极，多个垂直部分从公共线垂直延伸并且以与像素电极的垂直部分交替的方式布置，水平部分将多个垂直部分成一个。辅助线在像素电极的水平部分上方并与公共线重叠。

6. 发明申请

US20080020489A1 METHODS OF FABRICATING FERROELECTRIC DEVICES 有权
标题翻译：制造电磁装置的方法
公开(公告)号：US20080020489A1
公开(公告)日：2008-01-24
申请号：US11778880
申请日：2007-07-17
申请人： Dong Hyun Im , Byoung-Jae Bae , Ik-Soo Kim , Jang-Eun Heo , Choong-Man Lee , Dong-Chul Yoo
发明人： Dong Hyun Im , Byoung-Jae Bae , Ik-Soo Kim , Jang-Eun Heo , Choong-Man Lee , Dong-Chul Yoo
IPC分类号： H01L21/00
CPC分类号： H01L21/02197 , H01L21/02271 , H01L21/02318 , H01L21/31691 , H01L28/55
摘要： A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the substrate therefrom to thereby substantially inhibit formation of an impurity layer on the ferroelectric layer.
摘要翻译：制造铁电体元件的方法包括在反应室中的基板上形成铁电体层。在反应室中提供惰性气体，同时从其中卸载衬底，从而基本上抑制铁电层上的杂质层的形成。

7. 发明授权

US06741313B2 Array substrate for IPS mode liquid crystal display device and method for fabricating the same 有权
标题翻译： IPS模式液晶显示装置用阵列基板及其制造方法
公开(公告)号：US06741313B2
公开(公告)日：2004-05-25
申请号：US10318235
申请日：2002-12-13
申请人： Ik-Soo Kim , Gee-Sung Chae
发明人： Ik-Soo Kim , Gee-Sung Chae
IPC分类号： G02F11343
CPC分类号： G02F1/136213 , G02F1/134363
摘要： An array substrate for in-plane switching (IPS) mode liquid crystal display (LCD) device includes a pixel electrode having an extension portion, a vertical portion and a horizontal portion, the extension portion being extended from the drain electrode to the pixel region, the vertical portion being vertically extended from the extension portion and the horizontal portion being over the common line and being connected to the vertical portion. The device includes a common electrode having a plurality of vertical portions and a horizontal portion, the plurality of the vertical portions being vertically extended from the common line and arranged in an alternating pattern with the vertical portion of the pixel electrode, the horizontal portion connecting the plurality of the vertical portions into one. An auxiliary line is over the horizontal portion of the pixel electrode and being overlapped with the common line.
摘要翻译：用于面内切换（IPS）模式液晶显示（LCD）装置的阵列基板包括具有延伸部分，垂直部分和水平部分的像素电极，该延伸部分从漏电极延伸到像素区域，所述垂直部分从所述延伸部分垂直延伸，并且所述水平部分在所述公共线上方并且连接到所述垂直部分。该装置包括具有多个垂直部分和水平部分的公共电极，多个垂直部分从公共线垂直延伸并且以与像素电极的垂直部分交替的方式布置，水平部分将多个垂直部分成一个。辅助线在像素电极的水平部分上方并与公共线重叠。

8. 发明授权

US06501519B2 Transflective liquid crystal display device 有权
标题翻译：透反式液晶显示装置
公开(公告)号：US06501519B2
公开(公告)日：2002-12-31
申请号：US09736309
申请日：2000-12-15
申请人： Kyoung-Su Ha , Yong-Beom Kim , Ik-Soo Kim , Heume-Il Baek
发明人： Kyoung-Su Ha , Yong-Beom Kim , Ik-Soo Kim , Heume-Il Baek
IPC分类号： G02F11368
CPC分类号： G02F1/133555 , G02F1/136227
摘要： An inventive array substrate for the transflective liquid crystal display device includes a pixel electrode, a reflective electrode, and an interposed insulation layer. When the pixel electrode is under the reflective electrode, the sum of the thickness of the insulation layer and the reflective electrode is less than 0.5 micrometers. In other embodiments, upper surfaces of the reflective and pixel electrodes are on the same plane. This results from adjusting the thickness and changing the structure such as adopting a drain supplementary electrode extended from the drain electrode of the thin film transistor or positioning the pixel electrode within the transmitting hole of the reflective electrode.
摘要翻译：本发明的半透射型液晶显示装置用阵列基板包括像素电极，反射电极和插入绝缘层。当像素电极在反射电极下方时，绝缘层和反射电极的厚度之和小于0.5微米。在其他实施例中，反射和像素电极的上表面在同一平面上。这是由于调整厚度并改变结构，例如采用从薄膜晶体管的漏极延伸的漏极辅助电极或将像素电极定位在反射电极的透射孔内。

9. 发明申请

US20110272663A1 NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT 有权
标题翻译：使用可变电阻元件的非易失性存储器件
公开(公告)号：US20110272663A1
公开(公告)日：2011-11-10
申请号：US13103013
申请日：2011-05-06
申请人： Hyeong-Geun An , Sung-Lae Cho , Ik-Soo Kim , Dong-Hyun Im , Eun-Hee Cho
发明人： Hyeong-Geun An , Sung-Lae Cho , Ik-Soo Kim , Dong-Hyun Im , Eun-Hee Cho
IPC分类号： H01L45/00
CPC分类号： H01L45/04 , H01L27/2427 , H01L27/249 , H01L45/1226
摘要： A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions.
摘要翻译：提供了一种非易失性存储器件及其制造方法。非易失性存储器件包括从第一方向从衬底延伸的导电柱，围绕导电柱的可变电阻器，围绕可变电阻器的开关材料层，沿第二方向延伸的第一导电层，以及第一电极，其在第三方向上延伸并接触第一导电层和开关材料层。第一，第二和第三方向中没有一个平行于第一，第二和第三方向的另一个。

10. 发明申请

US20090061538A1 Methods of forming ferroelectric capacitors and methods of manufacturing semiconductor devices using the same 审中-公开
标题翻译：形成铁电电容器的方法和使用其制造半导体器件的方法
公开(公告)号：US20090061538A1
公开(公告)日：2009-03-05
申请号：US12222700
申请日：2008-08-14
申请人： Jang-Eun Heo , Choong-Man Lee , Ik-Soo Kim , Dong-Hyun Im
发明人： Jang-Eun Heo , Choong-Man Lee , Ik-Soo Kim , Dong-Hyun Im
IPC分类号： H01L21/02
CPC分类号： H01L28/65 , H01G4/085 , H01G4/33 , H01L21/02197 , H01L21/02266 , H01L21/0228 , H01L21/31691 , H01L27/11507 , H01L28/56
摘要： In a method of forming a ferroelectric capacitor, a lower electrode layer is formed on a substrate. A first crystalline layer is formed on the lower electrode layer. A ferroelectric layer is formed on the first crystalline layer. The first crystalline layer one of prevents a component of the ferroelectric layer from diffusing into the lower electrode layer and mitigates fatigue of the ferroelectric layer. An upper electrode layer is formed on the ferroelectric layer.
摘要翻译：在形成铁电电容器的方法中，在基板上形成下电极层。在下电极层上形成第一晶体层。在第一晶体层上形成铁电层。第一晶体层防止铁电层的成分扩散到下电极层中，并减轻铁电层的疲劳。在铁电层上形成上电极层。

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