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1. 发明授权

US09804330B1 Semiconductor device 有权
公开(公告)号：US09804330B1
公开(公告)日：2017-10-31
申请号：US15401311
申请日：2017-01-09
申请人： Mitsubishi Electric Corporation
发明人： Ryosuke Nagao , Yoshifumi Sasahata , Eitaro Ishimura
IPC分类号： H01S5/40 , G02B6/125 , G02B6/293 , G02B6/12 , H01S5/0625
CPC分类号： G02B6/125 , G02B6/12004 , G02B6/29344 , G02B6/2938 , G02B2006/12035 , G02B2006/12121 , H01S5/026 , H01S5/06256 , H01S5/0687 , H01S5/12 , H01S5/2022 , H01S5/4012 , H01S5/4031 , H01S5/4056 , H01S5/4087 , H01S2301/02
摘要： According to the present invention, a semiconductor device includes a substrate comprising a front end face, a rear end face and side faces, a plurality of semiconductor lasers provided on the substrate, a forward optical multiplexer to multiplex forward output light of the plurality of semiconductor lasers and output the multiplexed light to the front end face, a backward optical multiplexer to multiplex backward output light of the plurality of semiconductor lasers and output the multiplexed light to the rear end face and a plurality of backward waveguides connected to an output section of the backward optical multiplexer, wherein the plurality of backward waveguides includes a main waveguide disposed at a center of the output section and a plurality of lateral waveguides disposed on both sides of the main waveguide to bend toward the side faces and output light from the side faces diagonally to the side faces.

2. 发明授权

US09800020B2 Broad area laser including anti-guiding regions for higher-order lateral mode suppression 有权
公开(公告)号：US09800020B2
公开(公告)日：2017-10-24
申请号：US15177525
申请日：2016-06-09
申请人： II-VI Laser Enterprise GmbH
发明人： Jarkko Telkkälä , Jürgen Müller , Norbert Lichtenstein
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/24 , H01S5/34
CPC分类号： H01S5/205 , H01S5/2022 , H01S5/2031 , H01S5/2036 , H01S5/22 , H01S5/2202 , H01S5/24 , H01S5/34 , H01S2301/18
摘要： A broad area laser diode is configured to include an anti-guiding layer located outside of the active region of the device. The anti-guiding layer is formed of a high refractive index material that serves to de-couple unwanted, higher-order lateral modes (attributed to thermal lensing problems) from the lower-order mode output beam of output signal from the laser diode. The anti-guiding layer is formed using a single epitaxial growth step either prior to or subsequent to the steps used to grow the epitaxial layers forming the laser diode itself, thus creating a structure that provides suppression of unwanted higher-order modes without requiring a modification of specific process steps used to fabricate the laser diode itself.

3. 发明申请

US20160294161A1 SEMICONDUCTOR LASER 审中-公开
标题翻译：半导体激光器
公开(公告)号：US20160294161A1
公开(公告)日：2016-10-06
申请号：US15182252
申请日：2016-06-14
申请人： Kabushiki Kaisha Toshiba
发明人： Shigeyuki TAKAGI , Hidehiko Yabuhara , Akira Maekawa , Takayoshi Fuji , Yasumoto Shiomi
IPC分类号： H01S5/34 , H01S1/00 , H01S5/12 , H01S5/20 , H01S5/343 , H01S5/22
CPC分类号： H01S5/3402 , B82Y20/00 , H01S1/00 , H01S5/12 , H01S5/2022 , H01S5/2031 , H01S5/2054 , H01S5/22 , H01S5/2219 , H01S5/3211 , H01S5/3425 , H01S5/34333 , H01S2301/166 , H01S2301/176
摘要： A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.
摘要翻译：半导体激光器包括：具有包括量子阱层的有源层的层叠体，所述有源层具有级联结构，所述级联结构包括能够发射波长不小于12μm且不大于18μm的红外激光的第一区域通过量子阱层的子带间光学跃迁和能够缓和交替堆叠的载流子的能量的第二区域，该层叠体具有脊波导并能够发射红外激光; 以及电介质层，其被设置为夹着所述层叠体的至少一部分侧面的两侧，所述电介质层的透射率降低至50％的波长为16μm以上，所述电介质层具有折射率低于构成活性层的所有层的折射率。

4. 发明授权

US09407065B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US09407065B2
公开(公告)日：2016-08-02
申请号：US13565008
申请日：2012-08-02
申请人： Shigeyuki Takagi , Hidehiko Yabuhara , Akira Maekawa , Takayoshi Fujii , Yasutomo Shiomi
发明人： Shigeyuki Takagi , Hidehiko Yabuhara , Akira Maekawa , Takayoshi Fujii , Yasutomo Shiomi
IPC分类号： H01S5/34 , H01S5/20 , H01S5/22 , B82Y20/00 , H01S5/12 , H01S5/32
CPC分类号： H01S5/3402 , B82Y20/00 , H01S1/00 , H01S5/12 , H01S5/2022 , H01S5/2031 , H01S5/2054 , H01S5/22 , H01S5/2219 , H01S5/3211 , H01S5/3425 , H01S5/34333 , H01S2301/166 , H01S2301/176
摘要： A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.
摘要翻译：半导体激光器包括：具有包括量子阱层的有源层的层叠体，所述有源层具有级联结构，所述级联结构包括能够发射波长不小于12μm且不大于18μm的红外激光的第一区域通过量子阱层的子带间光学跃迁和能够缓和交替堆叠的载流子的能量的第二区域，该层叠体具有脊波导并能够发射红外激光; 以及电介质层，其被设置为夹着所述层叠体的至少一部分侧面的两侧，所述电介质层的透射率降低至50％的波长为16μm以上，所述电介质层具有折射率低于构成活性层的所有层的折射率。

5. 发明授权

US08993999B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08993999B2
公开(公告)日：2015-03-31
申请号：US14270464
申请日：2014-05-06
申请人： Kabushiki Kaisha Toshiba
发明人： Shigeyuki Takagi , Hidehiko Yabuhara
IPC分类号： H01L29/06 , H01S5/343 , H01S5/22 , H01S5/32 , H01S5/34 , H01S5/20 , H01S5/227
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2022 , H01S5/22 , H01S5/2206 , H01S5/222 , H01S5/2275 , H01S5/3213 , H01S5/3218 , H01S5/3402
摘要： According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 μm or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.
摘要翻译：根据实施例，半导体发光器件被配置为通过在多个量子阱的子带之间的电子的能量弛豫来发光。该器件包括有源层和至少一对覆层。有源层设置成在与光的发射方向平行的方向上延伸的条纹形状，并且包括多个量子阱; 有源层发射波长为10μm以上的光。每个包层分别设置在有源层上和下方，并且具有比有源层更低的折射率。包覆层的至少一部分包含与有源层具有不同晶格常数的材料，并且在比其他部分的光的波长处具有较低的光吸收。

6. 发明申请

US20140133504A1 Semiconductor Laser Diode 有权
标题翻译：半导体激光二极管
公开(公告)号：US20140133504A1
公开(公告)日：2014-05-15
申请号：US14031991
申请日：2013-09-19
申请人： OSRAM Opto Semiconductors GmbH
发明人： Bernhard Stojetz , Alfred Lell , Christoph Eichler
IPC分类号： H01S5/10
CPC分类号： H01S5/22 , H01S5/0202 , H01S5/0203 , H01S5/0207 , H01S5/0213 , H01S5/0653 , H01S5/2022 , H01S5/3013 , H01S5/34313 , H01S5/34333 , H01S2301/17
摘要： A semiconductor laser diode includes a substrate. A semiconductor layer sequence on the substrate has at least one active layer designed for generating laser light that is emitted along an emission direction during operation. At least one filter layer has a main extension plane that is parallel to a main extension plane of the active layer and that is designed to scatter and/or absorb light that propagates in the semiconductor layer sequence and/or the substrate in addition to the laser light.
摘要翻译：半导体激光二极管包括基板。衬底上的半导体层序列具有至少一个有源层，被设计用于产生在操作期间沿发射方向发射的激光。至少一个过滤层具有平行于有源层的主延伸面的主延伸平面，并且被设计成除了激光之外散射和/或吸收在半导体层序列和/或衬底中传播的光光。

7. 发明申请

US20110007769A1 LASER DIODE 审中-公开
标题翻译：激光二极管
公开(公告)号：US20110007769A1
公开(公告)日：2011-01-13
申请号：US12824377
申请日：2010-06-28
申请人： Yuji Masui , Osamu Maeda , Rintaro Koda , Takahiro Arakida , Naoki Jogan , Kouichi Kondo
发明人： Yuji Masui , Osamu Maeda , Rintaro Koda , Takahiro Arakida , Naoki Jogan , Kouichi Kondo
IPC分类号： H01S5/10 , H01S5/00
CPC分类号： H01S5/18316 , H01S5/18311 , H01S5/18333 , H01S5/18358 , H01S5/2022 , H01S2301/166
摘要： A laser diode includes: a first multilayer film reflecting mirror, an active layer, and a second multilayer film reflecting mirror in this order; and a first oxide narrowing layer and a second oxide narrowing layer. The first oxide narrowing layer is formed close to the active layer, in comparison with the second oxide narrowing layer, includes a first unoxidized region in a middle region in a plane, and includes a first oxidized region on a periphery of the first unoxidized region. The second oxide narrowing layer includes, in a region facing the first unoxidized region, a second unoxidized region having a diameter smaller than that of the first unoxidized region, includes a third unoxidized region in a region not facing the first unoxidized region, and includes a second oxidized region on a periphery of the second unoxidized region and the third unoxidized region.
摘要翻译：激光二极管包括：第一多层膜反射镜，有源层和第二多层膜反射镜; 以及第一氧化物变窄层和第二氧化物变窄层。与第二氧化物变窄层相比，第一氧化物变窄层靠近有源层形成，在平面中的中间区域包括第一未氧化区域，并且在第一未氧化区域的周围包括第一氧化区域。所述第二氧化物变窄层在面向所述第一未氧化区域的区域中包括直径小于所述第一未氧化区域的直径的第二未氧化区域，在不面向所述第一未氧化区域的区域中包含第三未氧化区域，第二未氧化区域的周边上的第二氧化区域和第三未氧化区域。

8. 发明申请

US20100027578A1 SURFACE EMITTING LASER, MANUFACTURING METHOD OF SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, MANUFACTURING METHOD OF SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY 有权
标题翻译：表面发射激光，表面发射激光的制造方法，表面发射激光阵列，表面发射激光阵列的制造方法和包括表面发射激光阵列的光学装置
公开(公告)号：US20100027578A1
公开(公告)日：2010-02-04
申请号：US12509632
申请日：2009-07-27
申请人： Tetsuya Takeuchi
发明人： Tetsuya Takeuchi
IPC分类号： H01S5/183 , H01S3/08 , H01L21/00
CPC分类号： H01S5/18391 , B82Y20/00 , H01S5/0421 , H01S5/18311 , H01S5/18358 , H01S5/18372 , H01S5/2022 , H01S5/34326
摘要： A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of λ/8 to 3λ/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.
摘要翻译：一种表面发射激光器，其通过在基板上层叠下反射镜，有源层和上反射镜而构成，其包括在上反射镜的发光部中，用于控制由低反射率区域和凹入的高反射率区域，形成在低反射率区域的中心部分，并且以λ的波长振荡，其中上反射镜由多层膜反射镜构成，基于由层叠多个层，多层膜反射镜包括在多层膜反射镜的发光周边部分中具有λ/ 8〜3λ/ 8范围内的光学厚度的相位调整层，以及吸收层在相位调整层中提供带 - 带吸收。

9. 发明授权

US07606278B2 Semiconductor laser, method of manufacturing semiconductor device, optical pickup, and optical disk apparatus 有权
标题翻译：半导体激光器，半导体器件的制造方法，光学拾取器和光盘装置
公开(公告)号：US07606278B2
公开(公告)日：2009-10-20
申请号：US11741980
申请日：2007-04-30
申请人： Masaru Kuramoto
发明人： Masaru Kuramoto
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/065 , H01S5/2009 , H01S5/2022 , H01S5/2081 , H01S5/2231 , H01S5/3216 , H01S2304/04
摘要： Disclosed herein is a semiconductor laser including: a first clad layer of a first conduction type; an active layer over said first clad layer; a saturable absorbing layer over said active layer; and a second clad layer of a second conduction type over said saturable absorbing layer; at least said second clad layer being provided with a pair of grooves parallel to each other with a predetermined spacing therebetween so as to form a ridge stripe therebetween. In the semiconductor laser, the distance from bottom surfaces of said grooves to an upper surface of said active layer is not less than 105 nm, and the distance from said bottom surfaces of said grooves to an upper surface of said saturable absorbing layer is not more than 100 nm.
摘要翻译：本发明公开了一种半导体激光器，包括：第一导电类型的第一包层; 在所述第一包层上方的有源层; 所述有源层上的饱和吸收层; 以及在所述可饱和吸收层上方的第二导电类型的第二覆层; 至少所述第二包层设置有彼此平行的一对槽，其间具有预定的间隔，以在其间形成脊条。在半导体激光器中，从所述凹槽的底面到所述有源层的上表面的距离为105nm以上，所述凹槽的所述底面到所述可饱和吸收层的上表面的距离不大超过100nm。

10. 发明申请

US20090213887A1 Semiconductor laser and method of manuracture 有权
标题翻译：半导体激光器及其制作方法
公开(公告)号：US20090213887A1
公开(公告)日：2009-08-27
申请号：US11991261
申请日：2006-08-30
申请人： John A. Patchell
发明人： John A. Patchell
IPC分类号： H01S5/02 , H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0656 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/1082 , H01S5/1085 , H01S5/2022 , H01S5/3211 , H01S5/34313 , H01S5/34366
摘要： The present application relates to a semiconductor laser, in particular such a laser which operates with substantially single longitudinal mode emission. The laser comprising a laser cavity, the laser further comprising a slot having an interface, characterised in that the slot is substantially filled with a reflective material having a large imaginary index relative to the laser cavity material. The interfaces of the slot may be inclined or may have a step for introducing a quarter wave phase shift.
摘要翻译：本申请涉及一种半导体激光器，特别是这样的激光器，其以基本上单个纵向模式发射工作。所述激光器包括激光腔，所述激光器还包括具有界面的狭槽，其特征在于，所述狭缝基本上填充有相对于所述激光腔材料具有大的虚拟折射率的反射材料。槽的接口可以是倾斜的或者可以具有用于引入四分之一波相移的步骤。

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