专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140306202A1 Organic Field Effect Transistor and Method for Production 审中-公开
标题翻译：有机场效应晶体管及其制作方法
公开(公告)号：US20140306202A1
公开(公告)日：2014-10-16
申请号：US14248437
申请日：2014-04-09
申请人： Novaled GmbH , Technische Universitaet Dresden
发明人： Hans Kleemann , Bjoern Luessem , Karl Leo
IPC分类号： H01L51/05 , H01L51/00
CPC分类号： H01L51/0512 , H01L51/0001 , H01L51/002 , H01L51/0508 , H01L51/0541 , H01L51/0545 , H01L51/0562
摘要： The present disclosure relates to an organic field effect transistor, comprising a first electrode and a second electrode, the electrodes providing a source electrode and a drain electrode, a gate electrode, an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode, wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided.
摘要翻译：本公开涉及一种有机场效应晶体管，包括第一电极和第二电极，所述电极提供源电极和漏电极，栅电极，至少部分由有机材料制成的电子有源区，并提供电荷载体通道和栅电极分离，包括直接设置在栅电极上的掺杂有机半导体层，其中掺杂的有机半导体层包含有机基质材料和有机掺杂剂。此外，提供了一种制造有机场效应晶体管的方法。

2. 发明申请

US20150090976A1 Method for Producing an Organic Field Effect Transistor and an Organic Field Effect Transistor 有权
标题翻译：制造有机场效应晶体管和有机场效应晶体管的方法
公开(公告)号：US20150090976A1
公开(公告)日：2015-04-02
申请号：US14390691
申请日：2013-03-28
申请人： Novaled GmbH , Technische Universitaet Dresden
发明人： Alexander Zakhidov , Bjoern Luessem , Karl Leo , Hans Kleemann
IPC分类号： H01L51/05 , H01L51/10 , H01L51/00
CPC分类号： H01L51/057 , B82Y10/00 , H01L51/0002 , H01L51/0016 , H01L51/0018 , H01L51/0046 , H01L51/0055 , H01L51/102 , H01L51/105
摘要： Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.
摘要翻译：提供了制造有机场效应晶体管，有机场效应晶体管和电子开关器件的方法。所述方法可以包括提供分配给栅电极的栅电极和栅绝缘体，用于在衬底上进行电绝缘，在栅极绝缘体上沉积第一有机半导体层，产生第一电极和分配给第一电极的电极绝缘体，用于电在第一有机半导体层上绝缘，在第一有机半导体层和电极绝缘体上沉积第二有机半导体层，以及在第二有机半导体层上产生第二电极。

3. 发明申请

US20130277651A1 Vertical Organic Transistor and Production Method 有权
标题翻译：垂直有机晶体管及其制作方法
公开(公告)号：US20130277651A1
公开(公告)日：2013-10-24
申请号：US13852134
申请日：2013-03-28
申请人： Technische Universitaet Dresden , Novaled AG
发明人： Axel Fischer , Karl Leo , Bjoern Luessem
IPC分类号： H01L51/05
CPC分类号： H01L51/057 , H01L51/002 , H01L51/105
摘要： The invention relates to a vertical organic transistor on a substrate having an electrode (121), a counter electrode (123) and a layer arrangement which is arranged between the electrode (121) and the counter electrode (123), wherein the layer arrangement is formed with the following layers: a central electrode (122), an organic layer (131) made up of organic semiconductor material which is arranged between the central electrode (122) and the electrode (121), a further organic layer (132) made up of organic semiconductor material, which is arranged between the central electrode (122) and the counter electrode (123), and a doping layer (141) which is arranged between the central electrode (122) and the electrode (121). Furthermore, the invention relates to a method for producing a vertical organic transistor.
摘要翻译：本发明涉及具有电极（121），对电极（123）和布置在电极（121）和对电极（123）之间的层布置的基板上的垂直有机晶体管，其中层布置是形成有以下层：中心电极（122），由位于中心电极（122）和电极（121）之间的有机半导体材料构成的有机层（131），形成有机层布置在中心电极（122）和对电极（123）之间的有机半导体材料的上表面以及布置在中心电极（122）和电极（121）之间的掺杂层（141）。此外，本发明涉及垂直有机晶体管的制造方法。

4. 发明申请

US20180016493A1 BLUE FLUORESCENT EMITTERS 审中-公开
公开(公告)号：US20180016493A1
公开(公告)日：2018-01-18
申请号：US15548774
申请日：2016-02-04
申请人： Technische Universitaet Dresden
发明人： Ramunas Lygaitis , Reinhard Scholz , Olaf Zeika , Sebastian Reineke , Karl Leo , Simone Hofmann , Martin Oberlaender
IPC分类号： C09K11/06 , C07D209/86 , C07D215/06 , C07D219/02 , C07D223/22 , C07D235/18 , C07D265/36 , H01L51/00 , C07D519/00 , C07D209/08 , C07D401/14 , C07D279/22 , C07D279/16 , C07D265/38 , C07D487/04 , H01L51/50
CPC分类号： C09K11/06 , C07D209/08 , C07D209/86 , C07D215/06 , C07D219/02 , C07D223/22 , C07D235/18 , C07D265/36 , C07D265/38 , C07D279/16 , C07D279/22 , C07D401/14 , C07D487/04 , C07D519/00 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1022 , C09K2211/1029 , C09K2211/1033 , C09K2211/1037 , C09K2211/1044 , C09K2211/1059 , H01L51/001 , H01L51/0067 , H01L51/0071 , H01L51/0072 , H01L51/0097 , H01L51/5012 , H01L51/5056 , H01L2251/5338 , Y02E10/549
摘要： The present invention relates to compounds of the formula (I) where C, D, A, m and n are as defined herein, and to their use in optoelectronic components and to optoelectronic components comprising them.

5. 发明申请

US20140284567A1 Vertical Organic Transistor, Circuit Configuration and Arrangement with Vertical Organic Transistors and Method of Manufacturing 审中-公开
标题翻译：垂直有机晶体管，垂直有机晶体管的电路配置和布置及其制造方法
公开(公告)号：US20140284567A1
公开(公告)日：2014-09-25
申请号：US14109637
申请日：2013-12-17
申请人： Technische Universitaet Dresden , Novaled AG
发明人： Axel Fischer , Bjoern Luessem , Karl Leo
IPC分类号： H01L51/05 , H01L27/28 , H01L51/00
CPC分类号： H01L51/057 , H01L27/283 , H01L51/0001 , H01L51/0026 , H01L51/0074
摘要： The application relates to a vertical organic transistor having a layer structure on a substrate. The layer structure includes an electrode, a counter-electrode and an electronically active layer arrangement which is disposed between the electrode and the counter-electrode. The application further relates to a method for fabricating a vertical organic transistor and a circuit arrangement.
摘要翻译：本申请涉及一种在衬底上具有层结构的垂直有机晶体管。层结构包括设置在电极和对电极之间的电极，对电极和电子有源层布置。本申请还涉及用于制造垂直有机晶体管和电路装置的方法。

6. 发明授权

US10396293B2 Electronic or optoelectronic device comprising an anchored thin molecular layer, process for its preparation and compound used therein 有权
公开(公告)号：US10396293B2
公开(公告)日：2019-08-27
申请号：US14912705
申请日：2014-08-19
申请人： Novaled GmbH
发明人： Sylvia Nicht , Jan Blochwitz-Nimoth , Björn Lüssem , Karl Leo , Axel Fischer
IPC分类号： C07D249/04 , H01L51/00 , H01L51/10 , H01L51/50 , H01L51/05 , H01L51/56
摘要： Electronic and optoelectronic devices are provided that may include at least one inorganic surface covered at least partly by an organic layer. The organic layer may include a compound having at least one anchor group anchoring the compound to the inorganic surface, at least one functional moiety, and at least one methylidenyl group. Compounds and methods for manufacturing electronic and optoelectronic devices also are provided.

7. 发明授权

US09978967B2 Method for producing an organic field effect transistor and an organic field effect transistor 有权
公开(公告)号：US09978967B2
公开(公告)日：2018-05-22
申请号：US15660218
申请日：2017-07-26
申请人： Novaled GmbH
发明人： Alexander Zakhidov , Bjoern Luessem , Karl Leo , Hans Kleemann
IPC分类号： H01L21/00 , H01L51/05 , B82Y10/00 , H01L51/10 , H01L51/00
CPC分类号： H01L51/057 , B82Y10/00 , H01L51/0002 , H01L51/0016 , H01L51/0018 , H01L51/0046 , H01L51/0055 , H01L51/102 , H01L51/105
摘要： Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.

8. 发明申请

US20170324051A1 Method for Producing an Organic Field Effect Transistor and an Organic Field Effect Transistor 审中-公开
公开(公告)号：US20170324051A1
公开(公告)日：2017-11-09
申请号：US15660218
申请日：2017-07-26
申请人： Novaled GmbH
发明人： Alexander Zakhidov , Bjoern Luessem , Karl Leo , Hans Kleemann
IPC分类号： H01L51/05 , H01L51/10 , H01L51/00 , B82Y10/00
CPC分类号： H01L51/057 , B82Y10/00 , H01L51/0002 , H01L51/0016 , H01L51/0018 , H01L51/0046 , H01L51/0055 , H01L51/102 , H01L51/105
摘要： Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.

9. 发明授权

US09620730B2 Method for manufacturing an organic electronic device and organic electronic device 有权
公开(公告)号：US09620730B2
公开(公告)日：2017-04-11
申请号：US14826350
申请日：2015-08-14
申请人： Novaled GmbH
发明人： Alrun Guenther , Hans Kleemann , Bjoern Luessem , Karl Leo , Daniel Kasemann
IPC分类号： H01L51/10 , H01L51/00 , H01L51/05
CPC分类号： H01L51/105 , H01L51/0001 , H01L51/0007 , H01L51/0046 , H01L51/0545 , H01L51/057
摘要： Organic electronic devices and methods for making organic electronic devices are provided. The organic electronic devices may include a gate electrode, a gate insulator, an organic semiconducting layer, a contact improving layer, a source electrode, and a drain electrode. The source electrode and the drain electrode may be arranged on the contact improving layer, and the contact improving layer may include an organic dopant material which is soluble in Hydrofluorether.

10. 发明申请

US20160064671A1 METHOD FOR MANUFACTURING AN ORGANIC ELECTRONIC DEVICE AND ORGANIC ELECTRONIC DEVICE 有权
标题翻译：有机电子器件和有机电子器件的制造方法
公开(公告)号：US20160064671A1
公开(公告)日：2016-03-03
申请号：US14779202
申请日：2014-03-25
申请人： NOVALED GMBH , TECHNISCHE UNIVERSITÄT DRESDEN
发明人： Hans Kleeman , Alexander Zakhidov , Bjoern Luessem , Karl Leo
IPC分类号： H01L51/00 , H01L51/44 , H01L51/05 , H01L51/56
CPC分类号： H01L51/0018 , H01L51/0015 , H01L51/0016 , H01L51/0023 , H01L51/0512 , H01L51/102 , H01L51/44 , H01L51/56 , Y02E10/549 , Y02P70/521
摘要： The disclosure provides a method of manufacturing an organic electronic device, including providing a layered device structure, the layered device structure including a plurality of electrodes and an electronically active region, said providing of the layered device structure including steps of providing an organic semiconducting layer, applying a structuring layer to the organic semiconducting layer, the structuring layer having a first region and a second region, the first region being covered by a layer material, applying a contact improving layer to the structuring layer by depositing at least one of an organic dopant material and an organic dopant-matrix material at least in the first region, depositing a layer material on the contact improving layer at least in the first region, and removing the structuring layer at least in the second region. Furthermore, an organic electronic device is provided.
摘要翻译：本发明提供一种制造有机电子器件的方法，包括提供分层器件结构，所述分层器件结构包括多个电极和电子有源区，所述提供层状器件结构包括以下步骤：提供有机半导体层，将结构层施加到有机半导体层，所述结构层具有第一区域和第二区域，所述第一区域被层材料覆盖，通过沉积至少一种有机掺杂剂将接触改善层施加到所述结构化层材料和至少在第一区域中的有机掺杂剂 - 基质材料，至少在第一区域中在层间材料上沉积层材料，以及至少在第二区域去除结构化层。此外，提供了一种有机电子装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式