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1. 发明授权

US10586889B2 Single photon source and method of controlled generation of photons 有权
公开(公告)号：US10586889B2
公开(公告)日：2020-03-10
申请号：US16347891
申请日：2018-01-23
申请人： OSRAM Opto Semiconductors GmbH
发明人： Jens Ebbecke
IPC分类号： H01L33/06 , H01L27/20 , H01L33/32
摘要： A single photon source includes a semiconductor body and a transducer, wherein the transducer during operation of a single photon source can be coupled into an active zone, disposed between a first and second semiconductor layer of the semiconductor body, the active zone and the transducer are arranged at a same vertical height to a carrier of the single photon source and piezoelectric intermediate layer material so that the intermediate layer is a propagation medium for surface waves generated or excited by the transducer, the intermediate layer is arranged in places between the first semiconductor layer and the active zone and adjoins the active zone, and an electrical insulation between the intermediate layer and the transducer is achieved by the intermediate layer being undoped at least in overlapping regions with the transducer or by an insulating layer being arranged between the transducer and the intermediate layer.

2. 发明申请

US20190214364A1 A METHOD OF ALIGNING SEMICONDUCTOR CHIPS, METHOD OF ARRANGING SEMICONDUCTOR CHIPS, DEVICE THAT PRODUCES A SEMICONDUCTOR COMPONENT, AND SEMICONDUCTOR COMPONENT 审中-公开
公开(公告)号：US20190214364A1
公开(公告)日：2019-07-11
申请号：US16329449
申请日：2017-08-30
申请人： OSRAM Opto Semiconductors GmbH
发明人： Philipp Kreuter , Andreas Biebersdorf , Christoph Klemp , Jens Ebbecke , Ines Pietzonka , Petrus Sundgren
IPC分类号： H01L23/00
摘要： A method of aligning semiconductor chips in a medium includes providing an electrically insulating liquid medium; providing semiconductor chips; forming a suspension with the medium and the semiconductor chips; exposing the semiconductor chips to electromagnetic radiation that generates free charge carriers in the semiconductor chips; arranging the suspension in an electric field in which the semiconductor chips are aligned along the electric field; and curing the medium after aligning the semiconductor chips.

3. 发明申请

US20160276531A1 SEMICONDUCTOR LAYER SEQUENCE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：半导体层序列及其生产方法
公开(公告)号：US20160276531A1
公开(公告)日：2016-09-22
申请号：US15034565
申请日：2014-11-04
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： Jens Ebbecke , Claudia Kauss , Petrus Sundgren
IPC分类号： H01L33/08 , H01L33/06 , H01L33/30 , H01L33/00 , H01L33/02
CPC分类号： H01L33/08 , H01L33/0062 , H01L33/025 , H01L33/06 , H01L33/30
摘要： A semiconductor layer sequence includes an n-conducting n-type side, a p-conducting p-type side, and an active zone between the sides, the active zone simultaneously generating a first radiation having a first wavelength and a second radiation having a second wavelength, the active zone including at least one radiation-active layer having a first material composition that generates the first radiation, the at least one radiation-active layer is oriented perpendicular to a growth direction of the semiconductor layer sequence, the active zone includes a multiplicity of radiation-active tubes having a second material composition and/or having a crystal structure that generates the second radiation, which crystal structure deviates from the at least one radiation-active layer, and the radiation-active tubes are oriented parallel to the growth direction, the radiation-active tubes having an average diameter of 5 nm to 100 nm and an average surface density of the radiation-active tubes of 108 1/cm2 to 1011 1/cm2.
摘要翻译：半导体层序列包括n导电n型侧，p导电p型侧和两侧之间的有源区，有源区同时产生具有第一波长的第一辐射和具有第二波长的第二辐射所述有源区包括至少一个具有产生所述第一辐射的第一材料组成的辐射活性层，所述至少一个辐射活性层垂直于所述半导体层序列的生长方向定向，所述活性区包括多个具有第二材料组合物和/或具有产生第二辐射的晶体结构的辐射活性管，该晶体结构偏离至少一个辐射活性层，并且辐射活性管平行于生长定向方向，辐射活性管的平均直径为5nm至100nm，辐射活性管的平均表面密度为10 8 1 / cm 2至10 11 1 / cm 2。

4. 发明申请

US20190341522A1 SINGLE PHOTON SOURCE AND METHOD OF CONTROLLED GENERATION OF PHOTONS 审中-公开
公开(公告)号：US20190341522A1
公开(公告)日：2019-11-07
申请号：US16347891
申请日：2018-01-23
申请人： OSRAM Opto Semiconductors GmbH
发明人： Jens Ebbecke
IPC分类号： H01L33/06 , H01L27/20 , H01L33/32
摘要： A single photon source includes a semiconductor body and a transducer, wherein the transducer during operation of a single photon source can be coupled into an active zone, disposed between a first and second semiconductor layer of the semiconductor body, the active zone and the transducer are arranged at a same vertical height to a carrier of the single photon source and piezoelectric intermediate layer material so that the intermediate layer is a propagation medium for surface waves generated or excited by the transducer, the intermediate layer is arranged in places between the first semiconductor layer and the active zone and adjoins the active zone, and an electrical insulation between the intermediate layer and the transducer is achieved by the intermediate layer being undoped at least in overlapping regions with the transducer or by an insulating layer being arranged between the transducer and the intermediate layer.

5. 发明申请

US20190189527A1 Method and Device for Measurement of a Plurality of Semiconductor Chips in a Wafer Array 审中-公开
公开(公告)号：US20190189527A1
公开(公告)日：2019-06-20
申请号：US16323237
申请日：2017-07-25
申请人： OSRAM Opto Semiconductors GmbH
发明人： Holger Specht , Roland Zeisel , Anton Vogl , Jens Ebbecke
IPC分类号： H01L21/66 , G01R31/265 , G01R31/26
CPC分类号： H01L22/12 , G01R31/2601 , G01R31/2656 , G01R31/311
摘要： A method and a device for measuring a plurality of semiconductor chips in a wafer array are disclosed. In an embodiment a method for measuring the semiconductor chips in a wafer array, wherein the wafer array is arranged on an electrically conductive carrier so that in each case back contacts of the semiconductor chips are contacted by the carrier, wherein a contact structure is arranged on a side of the wafer array facing away from the carrier, and wherein the contact structure includes a contact element and/or a plurality of radiation-emitting measurement semiconductor chips, includes applying a voltage between the contact structure and the carrier and measuring the semiconductor chips depending on a luminous image which is generated by emitted radiation which is caused simultaneously by fluorescence when the semiconductor chips are illuminated or by a radiation-emitting operation of the measurement semiconductor chips when the voltage is applied.

6. 发明申请

US20180374994A1 Light-Emitting Diode Chip, and Method for Manufacturing a Light-Emitting Diode Chip 审中-公开
公开(公告)号：US20180374994A1
公开(公告)日：2018-12-27
申请号：US15777633
申请日：2016-11-17
申请人： OSRAM Opto Semiconductors GmbH
发明人： Jens Ebbecke , Petrus Sundgren , Roland Zeisel
IPC分类号： H01L33/44 , H01L33/30 , H01L33/00
CPC分类号： H01L33/44 , H01L33/0062 , H01L33/0095 , H01L33/30 , H01L2933/0025
摘要： A light-emitting diode chip and a method for manufacturing a light-emitting diode chip are disclosed. In an embodiment a light-emitting diode chip includes an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation and a passivation layer comprising statically fixed electrical charge carriers, wherein the passivation layer is located on a side surface of the semiconductor layer sequence covering at least the active zone.

7. 发明申请

US20180018940A1 METHOD OF ADAPTING EMITTED RADIATION FROM LIGHT-EMITTING DIODES IN PIXELS OF A DISPLAY APPARATUS, AND DISPLAY APPARATUS 审中-公开
公开(公告)号：US20180018940A1
公开(公告)日：2018-01-18
申请号：US15645060
申请日：2017-07-10
申请人： OSRAM Opto Semiconductors GmbH
发明人： Andreas Biebersdorf , Philipp Kreuter , Christoph Klemp , Jens Ebbecke , Ines Pietzonka , Petrus Sundgren
IPC分类号： G09G5/10 , G09G3/32
CPC分类号： G09G5/10 , G09G3/32 , G09G2300/026 , G09G2300/0452 , G09G2320/0233 , G09G2320/0242 , G09G2320/045 , G09G2320/0626 , G09G2320/0666 , G09G2320/0693 , G09G2360/142 , G09G2360/144 , G09G2360/148
摘要： A method of adapting emitted radiation from light-emitting diodes in pixels of a display apparatus, wherein the display apparatus has a multiplicity of pixels each arranged for adjustable emitted radiation of mixed light, the pixels each include at least two light-emitting diodes and, in operation, the light-emitting diodes emit in various colors so that the mixed light is composed of light of these light-emitting diodes, at least some of the pixels each include at least one light-emitting diode, which at least intermittently is operated as a photodetector and measures a brightness, by the measured brightness, an emittance of each of the affected light-emitting diodes or of the affected pixel is ascertained, and the light-emitting diodes are triggered in accordance with the ascertained emittance so that aging of the light-emitting diodes is at least partly compensated for.

8. 发明申请

US20220254957A1 Method for Manufacturing A Semiconductor Device and Optoelectronic Device 有权
公开(公告)号：US20220254957A1
公开(公告)日：2022-08-11
申请号：US17614269
申请日：2020-05-19
申请人： OSRAM Opto Semiconductors GmbH
发明人： Philipp Kreuter , Andreas Biebersdorf , Christoph Klemp , Jens Ebbecke , Ines Pietzonka , Petrus Sundgren
IPC分类号： H01L33/30 , H01L33/02 , H01L33/00
摘要： In an embodiment a method for manufacturing a semiconductor device include providing a growth substrate, depositing an n-doped first layer, depositing an active region on the n-doped first layer, depositing a second layer onto the active region, depositing magnesium (Mg) in the second layer and subsequently to depositing Mg, depositing zinc (Zn) in the second layer such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.

9. 发明申请

US20220238752A1 Method of Laser Treatment of a Semiconductor Wafer Comprising AlGaInP-LEDs to Increase their Light Generating Efficiency 有权
公开(公告)号：US20220238752A1
公开(公告)日：2022-07-28
申请号：US17615487
申请日：2020-05-19
申请人： OSRAM Opto Semiconductors GmbH
发明人： Jens Ebbecke , Philipp Kreuter , Christoph Klemp , Andreas Biebersdorf , Ines Pietzonka , Petrus Sundgren
IPC分类号： H01L33/00
摘要： Embodiments provide a method for treating a semiconductor wafer comprising a set of aluminum gallium indium phosphide light emitting diodes (AlGaInP-LEDs) to increase a light generating efficiency of the AlGaInP-LEDs, wherein each AlGaInP-LED includes a core active layer for light generation sandwiched between two outer layers, the core active layer having a central light generating area and a peripheral edge surrounding the central light generating area, wherein the method includes treating the peripheral edge of the core active layer of each AlGaInP-LED with a laser beam thereby increasing a minimum band gap in each peripheral edge to such an extent that, during operation of the AlGaInP-LED, an electron-hole recombination is essentially confined to the central light generating area.

10. 发明申请

US20200066953A1 METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP 审中-公开
公开(公告)号：US20200066953A1
公开(公告)日：2020-02-27
申请号：US16348609
申请日：2018-02-12
申请人： OSRAM Opto Semiconductors GmbH
发明人： Jens Ebbecke
IPC分类号： H01L33/62 , H01L33/00 , H01L25/075 , H01L33/40 , H01L33/20
摘要： A method of manufacturing an optoelectronic semiconductor chip includes providing a growth substrate, growing a semiconductor layer sequence on the growth substrate, depositing a metallization on a side of the semiconductor layer sequence remote from the growth substrate, depositing a layer on the metallization, coupling a carrier to the layer on a side of the layer remote from the semiconductor layer sequence, separating the growth substrate from the semiconductor layer sequence, depositing an electrically conductive layer on a side of the semiconductor layer sequence facing away from the carrier, separating the carrier from the layer, thereby forming a layer stack with the metallization, the semiconductor layer sequence, the electrically conductive layer and a coupling layer including at least a part of a further material of the layer remaining on a side of the metallization remote from the semiconductor layer sequence, and coupling the layer stack to a chip carrier.

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