会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Two-delay voltage-controlled-oscillator with wide tuning range
    • 具有宽调谐范围的双延迟压控振荡器
    • US08884707B2
    • 2014-11-11
    • US13651340
    • 2012-10-12
    • QUALCOMM Incorporated
    • Emmanouil TerrovitisAbbas Komijani
    • H03K3/03
    • H03K3/03H03K2005/00071
    • An oscillator is disclosed that can generate an oscillation signal using a latch and two delay elements. For some embodiments, the oscillator includes an SR latch, a first delay element, and a second delay element. The SR latch has a first input, a second input, a first output, and a second output. The first delay element is coupled between the first output and the first input of the SR latch. The second delay element is coupled between the second output and the second input of the SR latch. For some embodiments, the first and second delay elements include a programmable pull-up circuit that allows the charging current to be adjusted in discrete amounts, and include a programmable capacitor circuit that allows the capacitance value to be adjusted in discrete amounts.
    • 公开了一种使用锁存器和两个延迟元件产生振荡信号的振荡器。 对于一些实施例,振荡器包括SR锁存器,第一延迟元件和第二延迟元件。 SR锁存器具有第一输入,第二输入,第一输出和第二输出。 第一延迟元件耦合在第一输出和SR锁存器的第一输入端之间。 第二延迟元件耦合在SR锁存器的第二输出端和第二输入端之间。 对于一些实施例,第一和第二延迟元件包括允许以离散量调节充电电流的可编程上拉电路,并且包括允许以离散量调整电容值的可编程电容器电路。
    • 4. 发明授权
    • Differential crystal oscillator circuit
    • 差分晶振电路
    • US09300249B2
    • 2016-03-29
    • US14338241
    • 2014-07-22
    • QUALCOMM Incorporated
    • Yashar RajaviAmirpouya KavousianAlireza KhaliliMohammad Bagher Vahid FarAbbas Komijani
    • H03B5/32H03B5/36
    • H03B5/364H03B5/06H03B5/36H03B2200/004H03B2200/0094
    • A differential crystal oscillator circuit, including: first and second output terminals; a cross-coupled oscillation unit including first and second transistors cross-coupled to the first and second output terminals; first and second metal-oxide semiconductor field-effect transistor (MOSFET) diodes, each MOSFET diode including a resistor connected between gate and drain terminals, wherein the first MOSFET diode couples to the first transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the first transistor, wherein the second MOSFET diode couples to the second transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the second transistor; and a reference resonator coupled between the first and second output terminals to establish an oscillation frequency.
    • 一种差分晶体振荡器电路,包括:第一和第二输出端子; 交叉耦合振荡单元,包括交叉耦合到第一和第二输出端的第一和第二晶体管; 第一和第二金属氧化物半导体场效应晶体管(MOSFET)二极管,每个MOSFET二极管包括连接在栅极和漏极端子之间的电阻器,其中第一MOSFET二极管耦合到第一晶体管以在低频和高电平下提供低阻抗负载 在第一晶体管的较高频率处的阻抗负载,其中所述第二MOSFET二极管耦合到所述第二晶体管,以在低频处提供低阻抗负载,并以较高频率向所述第二晶体管提供高阻抗负载; 以及耦合在第一和第二输出端子之间以建立振荡频率的参考谐振器。