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    • 4. 发明授权
    • Zero stress bonding of silicon carbide to diamond
    • 碳化硅与金刚石的零应力结合
    • US06189766B1
    • 2001-02-20
    • US09112429
    • 1998-07-10
    • Martin L. BakerWilliam F. CashionFred B. Hagedorn
    • Martin L. BakerWilliam F. CashionFred B. Hagedorn
    • G23K119
    • H01L23/3735H01L21/0445H01L23/3732H01L2924/0002Y10T428/30H01L2924/00
    • A multi-layer structure including a first layer; a second layer, with a coefficient of thermal expansion different than a coefficient of thermal expansion of the first layer, a bulk modulus different than a bulk modulus of the first layer and a thermal conductivity different than a thermal conductivity of the first layer; a bonding layer, having an isostatic pressure versus temperature curve with one of the first layer and the second layer which is substantially similar to an isostatic pressure versus temperature curve of the first layer and the second layer, such that a substantially stress-free bond is formed between the first layer and the second layer; wherein the first layer, the second layer, and the bonding layer are arranged as a sandwich, with the bonding layer in between the first layer and the second layer. The bonding layer may also be optional, in principle, and the first layer and the second layer bonded by diffusion, if the first layer and the second layer have sufficiently low melting temperatures.
    • 一种包括第一层的多层结构; 具有不同于第一层的热膨胀系数的热膨胀系数的第二层,不同于第一层的体积弹性模量的体积模量和不同于第一层的热导率的热导率的第二层; 具有与第一层和第二层中的一个基本相似的等静压力与温度曲线的粘合层,其基本上类似于第一层和第二层的等静压力对温度曲线,使得基本上无应力的键为 形成在第一层和第二层之间; 其中所述第一层,所述第二层和所述接合层被布置为夹层,所述接合层位于所述第一层和所述第二层之间。 如果第一层和第二层具有足够低的熔融温度,接合层原则上也可以是任选的,而第一层和第二层通过扩散结合。