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    • 3. 发明授权
    • Silicon carbide RF power module
    • 碳化硅RF功率模块
    • US5726605A
    • 1998-03-10
    • US626899
    • 1996-04-14
    • Alfred W. MorsePaul M. EskerRobin E. Hamilton
    • Alfred W. MorsePaul M. EskerRobin E. Hamilton
    • H01L25/16H03F3/60H03F3/68H03F1/30
    • H01L25/16H03F3/604H01L2924/0002H01L2924/3011
    • An RF power amplifier module utilizing a plurality of silicon carbide transistor power amplifier circuits, each including a transistor assembly having multiple cells, respectively providing power amplification of an input signal. In a preferred embodiment of the invention, four mutually staggered silicon carbide transistor assemblies, each containing multiple transistor cells, are operated in parallel while being arranged in close proximity on a common substrate. Each silicon carbide amplifier circuit assembly is commonly driven by a fifth silicon carbide amplifier circuit. The outputs of the parallely driven silicon carbide transistor power amplifier circuits are combined so as to provide a single composite RF output signal which may be in the order of 1000 watts or more when operated at a frequency of, for example, 600 MHz.
    • 一种利用多个碳化硅晶体管功率放大器电路的RF功率放大器模块,每个都包括具有多个单元的晶体管组件,分别提供输入信号的功率放大。 在本发明的一个优选实施例中,四个相互交错的碳化硅晶体管组件(每个包含多个晶体管单元)并行地并行布置在公共衬底附近。 每个碳化硅放大器电路组件通常由第五碳化硅放大器电路驱动。 并联驱动的碳化硅晶体管功率放大器电路的输出被组合以提供单个复合RF输出信号,当以例如600MHz的频率操作时,其可以处于1000瓦特或更多的数量级。