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1. 发明授权

US5998240A Method of extracting heat from a semiconductor body and forming microchannels therein 失效
标题翻译：从半导体主体提取热量并在其中形成微通道的方法
公开(公告)号：US5998240A
公开(公告)日：1999-12-07
申请号：US71776
申请日：1998-05-04
申请人： Robin E. Hamilton , Paul G. Kennedy , John Ostop , Martin L. Baker , Gregory A. Arlow , John C. Golombeck , Thomas J. Fagan, Jr.
发明人： Robin E. Hamilton , Paul G. Kennedy , John Ostop , Martin L. Baker , Gregory A. Arlow , John C. Golombeck , Thomas J. Fagan, Jr.
IPC分类号： H01L23/473 , H01L21/44
CPC分类号： H01L23/473 , F28F2260/02 , F28F3/12 , H01L2924/0002 , H01L2924/3011
摘要： Cooling of densely packaged semiconductor devices is achieved by microchannels which extract heat by forced convection and the use of fluid coolant located as close as possible to the heat source. The microchannels maximize heat sink surface area and provides improved heat transfer coefficients, thereby allowing a higher power density of semiconductor devices without increasing junction temperature or decreasing reliability. In its preferred embodiment, a plurality of microchannels are formed directly in the substrate portion of a silicon or silicon carbide chip or die mounted on a ground plane element of a circuit board and where a liquid coolant is fed to and from the microchannels through the ground plane. The microchannels comprise a plurality of closed-ended slots or grooves of generally rectangular cross section. Fabrication methods include deposition and etching, lift-off processing, micromachining and laser cutting techniques.
摘要翻译：密集封装的半导体器件的冷却是通过微通道实现的，微通道通过强制对流提取热量以及使用尽可能靠近热源的流体冷却剂。微通道使散热器表面积最大化，并提供改进的传热系数，从而允许半导体器件的功率密度更高，而不会增加结温或降低可靠性。在其优选实施例中，多个微通道直接形成在安装在电路板的接地平面元件上的硅或碳化硅芯片或裸片的衬底部分中，并且其中液体冷却剂被馈送到微通道并通过地面飞机微通道包括多个具有大致矩形横截面的闭合端的槽或凹槽。制造方法包括沉积和蚀刻，剥离加工，微加工和激光切割技术。

2. 发明授权

US5801442A Microchannel cooling of high power semiconductor devices 失效
标题翻译：大功率半导体器件的微通道冷却
公开(公告)号：US5801442A
公开(公告)日：1998-09-01
申请号：US681207
申请日：1996-07-22
申请人： Robin E. Hamilton , Paul G. Kennedy , John Ostop , Martin L. Baker , Gregory A. Arlow , John C. Golombeck , Thomas J Fagan, Jr.
发明人： Robin E. Hamilton , Paul G. Kennedy , John Ostop , Martin L. Baker , Gregory A. Arlow , John C. Golombeck , Thomas J Fagan, Jr.
IPC分类号： H01L23/473 , H01L23/34
CPC分类号： H01L23/473 , F28F2260/02 , F28F3/12 , H01L2924/0002 , H01L2924/3011
摘要： Cooling of densely packaged semiconductor devices is achieved by microchannels which extract heat by forced convection and the use of fluid coolant located as close as possible to the heat source. The microchannels maximize heat sink surface area and provides improved heat transfer coefficients, thereby allowing a higher power density of semiconductor devices without increasing junction temperature or decreasing reliability. In its preferred embodiment, a plurality of microchannels are formed directly in the substrate portion of a silicon or silicon carbide chip or die mounted on a ground plane element of a circuit board and where a liquid coolant is fed to and from the microchannels through the ground plane. The microchannels comprise a plurality of closed-ended slots or grooves of generally rectangular cross section. Fabrication methods include deposition and etching, lift-off processing, micromachining and laser cutting techniques.
摘要翻译：密集封装的半导体器件的冷却是通过微通道实现的，微通道通过强制对流提取热量以及使用尽可能靠近热源的流体冷却剂。微通道使散热器表面积最大化，并提供改进的传热系数，从而允许半导体器件的功率密度更高，而不会增加结温或降低可靠性。在其优选实施例中，多个微通道直接形成在安装在电路板的接地平面元件上的硅或碳化硅芯片或裸片的衬底部分中，并且其中液体冷却剂被馈送到微通道并通过地面飞机微通道包括多个具有大致矩形横截面的闭合端的槽或凹槽。制造方法包括沉积和蚀刻，剥离加工，微加工和激光切割技术。

3. 发明授权

US07034556B1 Pulsed thermal monitor 有权
标题翻译：脉冲热量监视器
公开(公告)号：US07034556B1
公开(公告)日：2006-04-25
申请号：US10702001
申请日：2003-11-05
申请人： Gregory A. Arlow
发明人： Gregory A. Arlow
IPC分类号： G01R31/02 , H05B1/00
CPC分类号： H05B1/0233
摘要： A power solid-state device is pulsed from a controlled pulse source, which generates heat in the chip. Similar or identical pulses are applied to a software or equivalent electrical hardware temperature simulator, for predicting the chip temperature. The output of the simulator is monitored, and the controlled pulse source is inhibited in the event that the predicted chip temperature exceeds a limit. A delay may be introduced between the pulse generation and application to the chip. Additional temperatures associated with the chip heat sink may be combined with the chip temperature.
摘要翻译：功率固态器件从受控的脉冲源脉冲，其在芯片中产生热量。类似或相同的脉冲被施加到软件或等效的电气硬件温度模拟器，用于预测芯片温度。监视模拟器的输出，并且在预测的芯片温度超过极限的情况下，控制的脉冲源被禁止。在脉冲产生和应用到芯片之间可能会引入延迟。与芯片散热器相关的附加温度可与芯片温度相结合。

4. 发明授权

US07332920B1 Pulsed thermal monitor 失效
标题翻译：脉冲热量监视器
公开(公告)号：US07332920B1
公开(公告)日：2008-02-19
申请号：US11226876
申请日：2005-09-14
申请人： Gregory A. Arlow
发明人： Gregory A. Arlow
IPC分类号： G01R31/02 , H05B1/00
CPC分类号： H05B1/0233
摘要： A power solid-state device is pulsed from a controlled pulse source, which generates heat in the chip. Similar or identical pulses are applied to a software or equivalent electrical hardware temperature simulator, for predicting the chip temperature. The output of the simulator is monitored, and the controlled pulse source is inhibited in the event that the predicted chip temperature exceeds a limit. A delay may be introduced between the pulse generation and application to the chip. Additional temperatures associated with the chip heat sink may be combined with the chip temperature.
摘要翻译：功率固态器件从受控的脉冲源脉冲，其在芯片中产生热量。类似或相同的脉冲被施加到软件或等效的电气硬件温度模拟器，用于预测芯片温度。监视模拟器的输出，并且在预测的芯片温度超过极限的情况下，控制的脉冲源被禁止。在脉冲产生和应用到芯片之间可能会引入延迟。与芯片散热器相关的附加温度可与芯片温度相结合。

5. 发明授权

US08750354B1 Nearfield testing architecture 有权
标题翻译：近场测试架构
公开(公告)号：US08750354B1
公开(公告)日：2014-06-10
申请号：US13104362
申请日：2011-05-10
申请人： William M. Heruska , Michael Uscinowicz , Gregory A. Arlow , Fred Tanjutco
发明人： William M. Heruska , Michael Uscinowicz , Gregory A. Arlow , Fred Tanjutco
IPC分类号： H04B3/46 , H04L23/00
CPC分类号： H04B5/0043 , H01Q3/267 , H04B5/0025
摘要： An open architecture design for a digital nearfield test system for nearfield testing of a phased array antenna allows the ability to use the components of an individual phased array antenna to be tested in conjunction with a nearfield scanner probe system allowing an efficient and cost-saving “radar testing the radar” scenario.
摘要翻译：用于相控阵天线近场测试的数字近场测试系统的开放架构设计允许使用单个相控阵天线的组件与近场扫描仪探头系统一起进行测试，从而实现高效节省成本“ 雷达测试雷达“情景。

6. 发明授权

US06600375B1 Floating source modulator for silicon carbide transistor amplifiers 有权
标题翻译：用于碳化硅晶体管放大器的浮动源调制器
公开(公告)号：US06600375B1
公开(公告)日：2003-07-29
申请号：US09952730
申请日：2001-09-12
申请人： Alfred W. Morse , Gregory A. Arlow
发明人： Alfred W. Morse , Gregory A. Arlow
IPC分类号： H03F304
CPC分类号： H03F1/30 , H03F3/191
摘要： A source modulator circuit for an amplifier including a silicon carbide (SiC) static induction transistor (SIT) having a grounded gate, a source and a drain, includes: a source bias voltage supply connected to the source of the transistor; a drain voltage supply connected between the source and drain of the transistor; and a shunt circuit for directing current from the drain voltage supply around the source voltage supply to said source; whereby power dissipation by the source voltage supply is minimized. The shunt circuit includes a field effect transistor (FET) switch responsive to a control signal from a gated feedback operational amplifier for turning on the quiescent current of the SIT and setting the voltage applied to the source to a desired source voltage level.
摘要翻译：一种用于放大器的源调制器电路，包括具有接地栅极，源极和漏极的碳化硅（SiC）静电感应晶体管（SIT），包括：源偏压电源，连接到晶体管的源极; 连接在晶体管的源极和漏极之间的漏极电压源; 以及分流电路，用于将源极电压源周围的漏极电压源的电流引导到所述源; 从而使源电压源的功率消耗最小化。分流电路包括响应来自门控反馈运算放大器的控制信号的场效应晶体管（FET）开关，用于接通SIT的静态电流并将施加到源极的电压设置为期望的源极电压电平。

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