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1. 发明授权

US10522347B2 Method for manufacturing sputtering target, method for forming oxide film, and transistor 有权
公开(公告)号：US10522347B2
公开(公告)日：2019-12-31
申请号：US15451715
申请日：2017-03-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Masashi Tsubuku , Masashi Oota , Yoichi Kurosawa , Noritaka Ishihara
IPC分类号： H01L21/02 , C23C14/08 , C01G15/00 , B82Y30/00 , C23C14/34 , C30B23/08 , C30B29/22 , H01J37/34 , C30B1/04 , C30B28/02 , C30B29/68 , H01L29/04 , H01L29/24 , H01L29/66 , H01L29/786
摘要： A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

2. 发明授权

US10316404B2 Method for manufacturing sputtering target 有权
公开(公告)号：US10316404B2
公开(公告)日：2019-06-11
申请号：US15537915
申请日：2015-12-16
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Yoshinori Yamada , Masashi Oota
IPC分类号： C23C14/34 , C01G15/00 , C23C14/08 , H01J37/34 , C01G9/02 , C01G9/00 , C01G19/02 , C04B35/453 , H01L29/786 , C01G19/00 , C30B23/02 , C30B29/22 , C04B35/01 , C04B35/117 , C04B35/44 , C04B35/457 , C04B35/505 , C04B35/64
摘要： A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %.

3. 发明授权

US09831274B2 Metal oxide film and method for forming metal oxide film 有权
公开(公告)号：US09831274B2
公开(公告)日：2017-11-28
申请号：US14734080
申请日：2015-06-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Masahiro Takahashi , Takuya Hirohashi , Masashi Tsubuku , Noritaka Ishihara , Masashi Oota
IPC分类号： C23C14/08 , H01L29/04 , H01L29/24 , H01L29/66 , G01N23/207 , H01L27/12 , H01L21/66 , G02F1/1368 , H01L29/786 , H01L21/02
CPC分类号： H01L27/1225 , C23C14/086 , G01N23/207 , G02F1/1368 , H01L21/0237 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L22/12 , H01L29/04 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78693 , H01L2924/0002 , H01L2924/00
摘要： A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

4. 发明授权

US09437428B2 Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration 有权
标题翻译：具有具有增加的氢浓度的氧化物半导体层的半导体器件的制造方法
公开(公告)号：US09437428B2
公开(公告)日：2016-09-06
申请号：US14552064
申请日：2014-11-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masashi Oota , Noritaka Ishihara , Motoki Nakashima , Yoichi Kurosawa , Shunpei Yamazaki , Yasuharu Hosaka , Toshimitsu Obonai , Junichi Koezuka
IPC分类号： H01L21/02 , H01L49/02 , H01L29/66 , H01L29/786
CPC分类号： H01L27/127 , H01L21/0242 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/02631 , H01L21/425 , H01L21/477 , H01L27/1225 , H01L27/1255 , H01L28/20 , H01L28/60 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.
摘要翻译：提供一种制造包含具有导电性的氧化物半导体膜的半导体器件的方法，或者包括具有透光性和导电性的氧化物半导体膜的半导体器件的制造方法。制造半导体器件的方法包括以下步骤：在第一绝缘膜上形成氧化物半导体膜，在氧化物半导体膜中包含的氧被释放的气氛中进行第一次热处理，并在含氢的从而形成具有导电性的氧化物半导体膜。

5. 发明授权

US09406760B2 Semiconductor film, transistor, semiconductor device, display device, and electronic appliance 有权
标题翻译：半导体膜，晶体管，半导体器件，显示器件和电子器件
公开(公告)号：US09406760B2
公开(公告)日：2016-08-02
申请号：US14626049
申请日：2015-02-19
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Akihisa Shimomura , Yasumasa Yamane , Yuhei Sato , Takahisa Ishiyama , Kenichi Okazaki , Chiho Kawanabe , Masashi Oota , Noritaka Ishihara
IPC分类号： H01L21/00 , H01L29/24 , C01G15/00 , H01L27/12
CPC分类号： H01L29/7869 , C01G15/006 , C01P2002/72 , C01P2002/89 , C01P2004/04 , C01P2006/40 , H01L27/1225 , H01L29/045 , H01L29/24 , H01L29/78696
摘要： Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.
摘要翻译：给半导体器件提供有利的电特性。此外，提供了具有高可靠性的半导体器件。本发明的一个实施方案是具有多个电子衍射图案的氧化物半导体膜，其以使得形成氧化物半导体膜的表面被照射电子束，该电子束的半峰宽为 1nm。多个电子衍射图案包括在不同区域中观察到的50个以上的电子衍射图案，第一电子衍射图案的百分比和第二电子衍射图案的百分比之和占100％，第一电子衍射图案占 90％以上时，第一电子衍射图案包括观察点，其表示c轴在与形成氧化物半导体膜的表面基本垂直的方向上取向。

6. 发明授权

US09035305B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09035305B2
公开(公告)日：2015-05-19
申请号：US14496500
申请日：2014-09-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masashi Tsubuku , Yusuke Nonaka , Noritaka Ishihara , Masashi Oota , Hideyuki Kishida
IPC分类号： H01L29/78 , H01L29/12 , H01L21/336 , H01L29/786 , H01L29/04 , H01L21/02
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/477 , H01L29/045 , H01L29/4908 , H01L29/66969 , H01L29/786 , H01L29/78603 , H01L29/78606 , H01L29/78696
摘要： Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.
摘要翻译：降低氧化物半导体的沟道形成区域中的氢浓度对于稳定包括氧化物半导体的晶体管的阈值电压和提高可靠性是重要的。因此，氢被氧化物半导体吸引并被捕获在与氧化物半导体的源极区域和漏极区域重叠的绝缘膜的区域中。杂质如氩，氮，碳，磷或硼添加到与氧化物半导体的源极区和漏极区重叠的绝缘膜的区域中，从而产生缺陷。氧化物半导体中的氢被吸引到绝缘膜中的缺陷。通过氢气的存在使绝缘膜中的缺陷稳定。

7. 发明申请

US20140183530A1 SEMICONDUCTOR DEVICE AND MEASUREMENT DEVICE 有权
标题翻译：半导体器件和测量器件
公开(公告)号：US20140183530A1
公开(公告)日：2014-07-03
申请号：US14141838
申请日：2013-12-27
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Shinpei Matsuda , Masashi Oota , Noritaka Ishihara
IPC分类号： H01L29/786 , H01L29/51
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/45 , H01L29/517 , H01L29/78606 , H01L29/78693 , H01L29/78696
摘要： A semiconductor device includes an oxide semiconductor layer over a first oxide layer; first source and drain electrodes over the oxide semiconductor layer; second source and drain electrodes over the first source and drain electrodes respectively; a second oxide layer over the first source and drain electrodes; a gate insulating layer over the second source and drain electrodes and the second oxide layer; and a gate electrode overlapping the oxide semiconductor layer with the gate insulating layer provided therebetween. The structure in which the oxide semiconductor layer is sandwiched by the oxide layers can suppress the entry of impurities into the oxide semiconductor layer. The structure in which the oxide semiconductor layer is contacting with the source and drain electrodes can prevent increasing resistance between the source and the drain comparing one in which an oxide semiconductor layer is electrically connected to source and drain electrodes through an oxide layer.
摘要翻译：半导体器件包括在第一氧化物层上的氧化物半导体层; 在氧化物半导体层上的第一源极和漏极; 分别在第一源极和漏极上的第二源极和漏极; 在第一源极和漏极上的第二氧化物层; 在第二源极和漏极电极和第二氧化物层上的栅极绝缘层; 并且与氧化物半导体层重叠的栅电极与设置在其间的栅极绝缘层。氧化物半导体层被氧化物层夹持的结构可以抑制杂质进入氧化物半导体层。氧化物半导体层与源极和漏极接触的结构可以防止源极和漏极之间的电阻增加，其中氧化物半导体层通过氧化物层与源极和漏极电连接。

8. 发明授权

US11637015B2 Method for manufacturing sputtering target, method for forming oxide film, and transistor 有权
公开(公告)号：US11637015B2
公开(公告)日：2023-04-25
申请号：US17491637
申请日：2021-10-01
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Masashi Tsubuku , Masashi Oota , Yoichi Kurosawa , Noritaka Ishihara
IPC分类号： H01L21/02 , C30B23/08 , C23C14/08 , C01G15/00 , B82Y30/00 , C23C14/34 , C30B29/22 , H01J37/34 , C30B1/04 , C30B28/02 , C30B29/68 , H01L29/04 , H01L29/24 , H01L29/66 , H01L29/786
摘要： A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

9. 发明授权

US10374030B2 Metal oxide semiconductor device 有权
公开(公告)号：US10374030B2
公开(公告)日：2019-08-06
申请号：US15687061
申请日：2017-08-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Masahiro Takahashi , Takuya Hirohashi , Masashi Tsubuku , Masashi Oota
IPC分类号： H01L29/00 , H01L29/04 , H01L29/786 , H01L29/24 , H01L29/26
摘要： A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

10. 发明授权

US09831353B2 Semiconductor device, display device, display module, electronic device, oxide, and manufacturing method of oxide 有权
公开(公告)号：US09831353B2
公开(公告)日：2017-11-28
申请号：US14974977
申请日：2015-12-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Takuya Kawata , Masashi Oota , Yusuke Nonaka , Shunpei Yamazaki
IPC分类号： H01L21/02 , H01L29/786 , H01L29/04 , C23C14/08 , C23C14/34 , C23C14/35 , C23C14/56 , H01J37/32 , H01J37/34 , H01L21/67 , H01L21/8258 , H01L27/092 , H01L27/06
CPC分类号： H01L29/78693 , C23C14/08 , C23C14/3414 , C23C14/352 , C23C14/564 , C23C14/566 , H01J37/32899 , H01J37/3408 , H01J37/3417 , H01J37/3447 , H01L21/0243 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02647 , H01L21/67207 , H01L21/8258 , H01L27/0629 , H01L27/0688 , H01L27/092 , H01L29/04 , H01L29/78696
摘要： The semiconductor device includes a first insulator over a substrate, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor in contact with the second oxide semiconductor, a third oxide semiconductor on the second oxide semiconductor and the first and second conductors, a second insulator over the third oxide semiconductor, and a third conductor over the second insulator. At least one of the first oxide semiconductor, the second oxide semiconductor, and the third oxide semiconductor has a crystallinity peak that corresponds to a (hkl) plane (h=0, k=0, l is a natural number) observed by X-ray diffraction using a Cu K-alpha radiation as a radiation source. The peak appears at a diffraction angle 2 theta greater than or equal to 31.3 degrees and less than 33.5 degrees.

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