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1. 发明申请

US20170358667A1 METHODS OF FORMING A BIPOLAR TRANSISTOR HAVING A COLLECTOR WITH A DOPING SPIKE 审中-公开
公开(公告)号：US20170358667A1
公开(公告)日：2017-12-14
申请号：US15666465
申请日：2017-08-01
申请人： Skyworks Solutions, Inc.
发明人： Peter J. Zampardi, JR. , Kai Hay Kwok
IPC分类号： H01L29/737 , H01L29/08 , H01L29/732 , H01L29/205 , H01L29/66 , H01L29/165 , H01L23/66 , H01L29/36 , H01L29/73 , H03F3/213 , H03F3/195
CPC分类号： H01L29/7378 , H01L23/66 , H01L29/0821 , H01L29/0826 , H01L29/165 , H01L29/205 , H01L29/36 , H01L29/365 , H01L29/66242 , H01L29/73 , H01L29/7325 , H01L29/737 , H01L29/7371 , H01L2223/665 , H01L2223/6655 , H01L2223/6677 , H01L2223/6683 , H03F3/195 , H03F3/213 , H03F2200/451
摘要： This disclosure relates to methods of forming bipolar transistors, such as heterojunction bipolar transistors. The methods may include forming a sub-collector over a substrate, forming a first portion of a collector over the sub-collector and doping a second portion of the collector to form a doping spike. The method may further include forming a third portion of the collector over the doping spike and forming a base of the bipolar transistor over the third portion of the collector.

2. 发明授权

US09070732B2 Bipolar transistor having collector with doping spike 有权
标题翻译：具有掺杂尖峰的集电极的双极晶体管
公开(公告)号：US09070732B2
公开(公告)日：2015-06-30
申请号：US13870682
申请日：2013-04-25
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Peter J. Zampardi, Jr. , Kai Hay Kwok
IPC分类号： H01L29/739 , H01L29/737 , H01L29/08 , H01L29/73 , H01L29/36
CPC分类号： H01L29/7378 , H01L23/66 , H01L29/0821 , H01L29/0826 , H01L29/165 , H01L29/205 , H01L29/36 , H01L29/365 , H01L29/66242 , H01L29/73 , H01L29/7325 , H01L29/737 , H01L29/7371 , H01L2223/665 , H01L2223/6655 , H01L2223/6677 , H01L2223/6683 , H03F3/195 , H03F3/213 , H03F2200/451
摘要： This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface between the collector and the base. For instance, the doping spike can be disposed within half of the thickness of the collector from the interface between the collector and the base. Such bipolar transistors can be implemented, for example, in power amplifiers.
摘要翻译：本公开涉及双极晶体管，例如异质结双极晶体管，其在集电极中具有掺杂尖峰。掺杂尖峰可以相对靠近集电极和基极之间的界面设置。例如，掺杂尖峰可以从收集器和基座之间的界面设置在集电器的厚度的一半之内。这样的双极晶体管可以例如在功率放大器中实现。

3. 发明申请

US20230006056A1 BIPOLAR TRANSISTOR HAVING COLLECTOR WITH DOPING CONCENTRATION GRADING 有权
公开(公告)号：US20230006056A1
公开(公告)日：2023-01-05
申请号：US17809856
申请日：2022-06-29
申请人： Skyworks Solutions, Inc.
发明人： Kai Hay Kwok , Cristian Cismaru , Andre G. Metzger , Guoliang Zhou
IPC分类号： H01L29/737 , H01L29/08 , H01L29/20
摘要： This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having increased collector thickness for improved ruggedness. In some embodiments, the collector thickness can be above 1.1 microns. The collector can have at least one doping concentration grading. The collector can have a high doping concentration at a junction between the collector and the sub-collector, such as at the high end of the grading. In some embodiments, the high doping concentration can be above about 9×1016 cm−3. The collector can include a region with high doping concentration adjacent the base. The collector can include a discontinuity in the doping concentration, such as at the low end of the grading. Such bipolar transistors can be implemented, for example, in power amplifiers.

4. 发明申请

US20180158579A1 METHODS OF FORMING THIN FILM RESISTORS WITH HIGH POWER HANDLING CAPABILITY 审中-公开
公开(公告)号：US20180158579A1
公开(公告)日：2018-06-07
申请号：US15806975
申请日：2017-11-08
申请人： Skyworks Solutions, Inc.
发明人： Peter J. Zampardi, JR. , Kai Hay Kwok
IPC分类号： H01C1/16 , H01C7/00 , H01L49/02 , H01L27/01 , H01P1/22 , H01C1/14 , H01C1/012
CPC分类号： H01C1/16 , H01C1/012 , H01C1/14 , H01C7/006 , H01L27/016 , H01L28/20 , H01P1/227 , Y10T29/49016
摘要： Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.

5. 发明申请

US20130285121A1 BIPOLAR TRANSISTOR HAVING COLLECTOR WITH DOPING SPIKE 有权
公开(公告)号：US20130285121A1
公开(公告)日：2013-10-31
申请号：US13870682
申请日：2013-04-25
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Peter J. Zampardi, JR. , Kai Hay Kwok
IPC分类号： H01L29/73 , H01L29/737
CPC分类号： H01L29/7378 , H01L23/66 , H01L29/0821 , H01L29/0826 , H01L29/165 , H01L29/205 , H01L29/36 , H01L29/365 , H01L29/66242 , H01L29/73 , H01L29/7325 , H01L29/737 , H01L29/7371 , H01L2223/665 , H01L2223/6655 , H01L2223/6677 , H01L2223/6683 , H03F3/195 , H03F3/213 , H03F2200/451
摘要： This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface between the collector and the base. For instance, the doping spike can be disposed within half of the thickness of the collector from the interface between the collector and the base. Such bipolar transistors can be implemented, for example, in power amplifiers.

6. 发明授权

US09842674B2 Methods of forming thin film resistors with high power handling capability 有权
公开(公告)号：US09842674B2
公开(公告)日：2017-12-12
申请号：US15197380
申请日：2016-06-29
申请人： Skyworks Solutions, Inc.
发明人： Peter J. Zampardi, Jr. , Kai Hay Kwok
IPC分类号： H01P1/22 , H01C1/16 , H01C1/012 , H01C1/14 , H01L27/01 , H01L49/02 , H01C7/00
CPC分类号： H01C1/16 , H01C1/012 , H01C1/14 , H01C7/006 , H01L27/016 , H01L28/20 , H01P1/227
摘要： Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.

7. 发明授权

US09722058B2 Bipolar transistor having collector with doping spike 有权
公开(公告)号：US09722058B2
公开(公告)日：2017-08-01
申请号：US15197611
申请日：2016-06-29
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Peter J. Zampardi, Jr. , Kai Hay Kwok
IPC分类号： H01L29/739 , H01L29/737 , H01L29/73 , H01L31/0328 , H01L29/36 , H01L29/08 , H01L29/732 , H01L23/66 , H01L29/165 , H01L29/205 , H01L29/66 , H03F3/195 , H03F3/213
CPC分类号： H01L29/7378 , H01L23/66 , H01L29/0821 , H01L29/0826 , H01L29/165 , H01L29/205 , H01L29/36 , H01L29/365 , H01L29/66242 , H01L29/73 , H01L29/7325 , H01L29/737 , H01L29/7371 , H01L2223/665 , H01L2223/6655 , H01L2223/6677 , H01L2223/6683 , H03F3/195 , H03F3/213 , H03F2200/451
摘要： This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface between the collector and the base. For instance, the doping spike can be disposed within half of the thickness of the collector from the interface between the collector and the base. Such bipolar transistors can be implemented, for example, in power amplifiers.

8. 发明申请

US20160307671A1 METHODS OF FORMING THIN FILM RESISTORS WITH HIGH POWER HANDLING CAPABILITY 审中-公开
标题翻译：用高功率处理能力形成薄膜电阻的方法
公开(公告)号：US20160307671A1
公开(公告)日：2016-10-20
申请号：US15197380
申请日：2016-06-29
申请人： Skyworks Solutions, Inc.
发明人： Peter J. Zampardi, JR. , Kai Hay Kwok
IPC分类号： H01C1/16 , H01C7/00 , H01C1/012 , H01C1/14 , H01L49/02 , H01L27/01
CPC分类号： H01C1/16 , H01C1/012 , H01C1/14 , H01C7/006 , H01L27/016 , H01L28/20 , H01P1/227
摘要： Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.
摘要翻译：公开了与具有薄膜电阻器组件的衰减器相关的设计和方法。在一些实施例中，薄膜组件可以包括第一和第二薄膜电阻器，每个薄膜电阻器具有主要部分，其具有输入端和输出端。第一薄膜电阻器的输入端与第二薄膜电阻器的输入端互连，第一薄膜电阻器的输出端与第二薄膜电阻器的输出端互连。第一和第二薄膜电阻器相对于彼此设置以限定分离。分离区域降低了在薄膜结构的中心处或附近形成热点区域的可能性，并且改善给定电阻器宽度的功率处理能力。还公开了如何在不同的产品和制造方法中实现前述特征的示例。

9. 发明申请

US20230006055A1 BIPOLAR TRANSISTOR HAVING COLLECTOR WITH DOPING CONCENTRATION DISCONTINUITY 有权
公开(公告)号：US20230006055A1
公开(公告)日：2023-01-05
申请号：US17809855
申请日：2022-06-29
申请人： Skyworks Solutions, Inc.
发明人： Kai Hay Kwok , Cristian Cismaru , Andre G. Metzger , Guoliang Zhou
IPC分类号： H01L29/737 , H01L29/20 , H01L29/08
摘要： This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having increased collector thickness for improved ruggedness. In some embodiments, the collector thickness can be above 1.1 microns. The collector can have at least one doping concentration grading. The collector can have a high doping concentration at a junction between the collector and the sub-collector, such as at the high end of the grading. In some embodiments, the high doping concentration can be above about 9×1016 cm−3. The collector can include a region with high doping concentration adjacent the base. The collector can include a discontinuity in the doping concentration, such as at the low end of the grading. Such bipolar transistors can be implemented, for example, in power amplifiers.

10. 发明授权

US10158010B2 Methods of forming a bipolar transistor having a collector with a doping spike 有权
公开(公告)号：US10158010B2
公开(公告)日：2018-12-18
申请号：US15666465
申请日：2017-08-01
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Peter J. Zampardi, Jr. , Kai Hay Kwok
IPC分类号： H01L29/73 , H01L29/737 , H01L29/08 , H01L29/36 , H01L29/732 , H01L23/66 , H01L29/165 , H01L29/205 , H01L29/66 , H03F3/195 , H03F3/213
摘要： This disclosure relates to methods of forming bipolar transistors, such as heterojunction bipolar transistors. The methods may include forming a sub-collector over a substrate, forming a first portion of a collector over the sub-collector and doping a second portion of the collector to form a doping spike. The method may further include forming a third portion of the collector over the doping spike and forming a base of the bipolar transistor over the third portion of the collector.

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