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1. 发明授权

US11177801B2 Leakage current reduction type radio frequency switch device 有权
公开(公告)号：US11177801B2
公开(公告)日：2021-11-16
申请号：US16280923
申请日：2019-02-20
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Byeong Hak Jo , Hyun Paek , Jeong Hoon Kim
IPC分类号： H03K17/16 , H02H9/04
摘要： A radio frequency switching device includes: a first series switching circuit connected between a first terminal and a second terminal; a first shunt switching circuit connected between one end of the first series switching circuit and a ground; a voltage generation circuit configured to generate a first gate voltage to be output to the first series switching circuit, to generate a second gate voltage to be output to the first shunt switching circuit, and to generate a bias voltage higher than the second gate voltage to control the first shunt switching circuit to enter an off state; a first resistance circuit connected between a signal line between the first terminal and the second terminal, and a bias voltage terminal of the voltage generation circuit; and a second resistance circuit connected between the bias voltage terminal of the voltage generation circuit and a ground terminal of the first shunt switching circuit.

2. 发明授权

US10554125B1 Negative voltage circuit based on dual charge pump 有权
公开(公告)号：US10554125B1
公开(公告)日：2020-02-04
申请号：US16431797
申请日：2019-06-05
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Hyun Paek
IPC分类号： H02M3/07
摘要： A negative voltage circuit includes a dual charging circuit, a pumping capacitor circuit, a dual discharging circuit, an output switch circuit, and a load capacitor circuit. The dual charging circuit is configured to operate in a start-up or normal operating mode during a charging mode, and supply a first current in the start-up mode higher than a second current in the normal operating mode. The pumping capacitor circuit is configured to charge based on a charging current from the dual charging circuit. The dual discharging circuit is configured to operate in the start-up mode or the normal operating mode during a discharging mode, and discharge the pumping capacitor to allow a third current in the start-up mode to flow between the pumping capacitor and the terminal of the second operating voltage. The third current in the start-up mode is higher than a fourth current in the normal operating mode.

3. 发明授权

US10270405B2 Radio frequency switch apparatus with improved harmonic attenuation characteristics 有权
公开(公告)号：US10270405B2
公开(公告)日：2019-04-23
申请号：US15813234
申请日：2017-11-15
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Byeong Hak Jo , Jeong Hoon Kim , Hyun Paek
IPC分类号： H01L27/06 , H01L27/07 , H03K17/16 , H03F3/193 , H03F3/72 , H03H9/00
摘要： A radio frequency (RF) switch apparatus includes a signal input terminal; a signal output terminal; a first transistor including a first input terminal connected to the signal input terminal, a first output terminal connected to the signal output terminal, a first gate terminal, and a first body terminal, wherein one of the first input terminal and the first output terminal is a source terminal and another one of the first input terminal and the first output terminal is a drain terminal; a first capacitor circuit connected between the first input terminal and the first body terminal; and a second capacitor circuit connected between the first body terminal and the first output terminal; wherein a first capacitance of the first capacitor circuit is greater than a second capacitance of the second capacitor circuit.

4. 发明授权

US10483968B2 Apparatus and method for determining optimum stack number of RF switch 有权
公开(公告)号：US10483968B2
公开(公告)日：2019-11-19
申请号：US16242518
申请日：2019-01-08
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Byeong Hak Jo , Jeong Hoon Kim , Hyun Paek
IPC分类号： H03K17/693 , H03K17/687 , H03K17/0812
摘要： An apparatus for determining an optimum stacking number of an RF switch, in which a gate-off voltage and a body-off voltage are used to control transistors stacked in series to enter an OFF state. The apparatus includes a memory configured to store a peak voltage of a high-frequency signal in a corresponding band, and a gate limiting voltage, a drain-source limiting voltage, and a body limiting voltage in a corresponding process for each of the transistors, and a processor configured to calculate a gate terminal voltage, a drain-source voltage, and a body terminal voltage using the peak voltage, the gate limiting voltage, the drain-source limiting voltage, and the body limiting voltage and to determine an optimum stacking number based on the gate terminal voltage, the gate limiting voltage, the drain-source voltage, the drain-source limiting voltage, the body terminal voltage, and the body limiting voltage.

5. 发明授权

US10396765B2 Power amplifying apparatus with spurious signal reduction function 有权
公开(公告)号：US10396765B2
公开(公告)日：2019-08-27
申请号：US15801137
申请日：2017-11-01
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Byeong Hak Jo , Jeong Hoon Kim , Hyun Paek , Jong Ok Ha
IPC分类号： H03K5/1252 , H03F3/19 , H03F3/21 , H02M3/07 , H03K3/354 , H03K3/84 , H03K4/08 , H03F1/02 , H03F3/24 , H02M1/44 , H03K3/03 , H03K7/08 , H03K17/28 , H02M1/00
摘要： A power amplifying apparatus includes a power circuit configured to generate operating power, a random pulse generation circuit configured to be supplied with the operating power and to generate a pulse width modulation signal of which a pulse width is randomly changed over time using an input radio frequency (RF) signal, and a charge pump circuit configured to be supplied with the operating power and to randomly perform a switching operation according to the pulse width modulation signal to generate a negative voltage.

6. 发明授权

US10148298B2 Radio frequency switch apparatus having dynamic bias 有权
公开(公告)号：US10148298B2
公开(公告)日：2018-12-04
申请号：US15667808
申请日：2017-08-03
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Byeong Hak Jo , Jeong Hoon Kim , Hyun Paek , Young Wong Jang
IPC分类号： H03K17/687 , H04B1/10 , H01P1/15 , H03K17/16 , H04B1/50
摘要： A radio frequency switch apparatus includes a radio frequency switch, a dynamic bias circuit, and a switch control circuit. The radio frequency switch includes a first radio frequency switch circuit connected between a first signal terminal and an input terminal. The first radio frequency switch circuit includes a series switch and a shunt switch. The dynamic bias circuit is configured to generate a bias voltage and a buffer voltage lower than a battery voltage by a preset voltage, using the battery voltage and configured to output the bias voltage to a signal line connected to the input terminal. The switch control circuit is configured to generate first and second gate voltages to switch the first radio frequency switch circuit, based on a band selection signal, using the battery voltage and the buffer voltage.

7. 发明授权

US08766679B1 Power on reset (POR) circuit 有权
标题翻译：上电复位（POR）电路
公开(公告)号：US08766679B1
公开(公告)日：2014-07-01
申请号：US13957382
申请日：2013-08-01
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Hyun Paek , Joo Yul Ko
IPC分类号： H03L7/00
CPC分类号： H03L5/00 , H03K17/223
摘要： Disclosed herein is a power on reset (POR) circuit, including: a current mirror circuit adjusting ratio of current flowing in a circuit according to voltage supplied from power; an inverter driven according to output of the current mirror circuit to output a POR signal; a brown out detection (BOD) comparator electrically connected to the current mirror circuit and comparing the voltage supplied from the power with reference voltage to output a corresponding voltage signal according to the comparison result; a BOD controlling switch driven when the output of the BOD comparator is zero voltage (0V) to again operate a POR; and a current controlling switch installed in the current mirror circuit and driven when the output of the BOD comparator is zero voltage (0V) to control and supply current of the POR.
摘要翻译：这里公开了一种上电复位（POR）电路，包括：根据电源提供的电压在电流中流动的电流的电流镜电路调节比; 根据电流镜电路的输出驱动的反相器输出POR信号; 电流检测（BOD）比较器电连接到电流镜电路，并将从功率提供的电压与参考电压进行比较，以根据比较结果输出相应的电压信号; 当BOD比较器的输出为零电压（0V）以再次操作POR时，BOD控制开关被驱动; 和一个安装在电流镜电路中的电流控制开关，当BOD比较器的输出为零电压（0V）时，该电流控制开关用于控制和提供POR的电流。

8. 再颁专利

USRE49317E1 Transformer and method of manufacturing the same 有权
公开(公告)号：USRE49317E1
公开(公告)日：2022-11-29
申请号：US16713483
申请日：2019-12-13
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Hyun Paek , Yoo Sam Na , Hyeon Seok Hwang , Gyu Suck Kim , Su Gyeong Kim , Shin Hwan Hwang , Moon Suk Jeong
IPC分类号： H01F5/00 , H01F27/28 , H01F19/04
摘要： Disclosed herein are a transformer and a method of manufacturing the same. The transformer includes: a primary side winding having a loop shape; a secondary side winding formed on the same plane as that of the primary side winding in a remaining section except for at least a section at which it intersects with the primary side winding and having the same loop shape as that of the primary side winding so as to be electromagnetically coupled to the primary side winding; and an intersecting section formed so that the primary side and secondary side windings having the sum of the turn numbers of 3 or more intersect with each other in a two-layer structure, wherein the intersecting section includes at least one point of intermediate node having one side connected in a first layer and the other side connected in a second layer.

9. 发明授权

US10855176B1 Negative voltage generation circuit without low-dropout regulator 有权
公开(公告)号：US10855176B1
公开(公告)日：2020-12-01
申请号：US16536601
申请日：2019-08-09
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Byeong Hak Jo , Hyun Paek , Jeong Hoon Kim , Sol A Kim , Jong Mo Lim
IPC分类号： H02M3/07
摘要： A negative voltage generation circuit includes a clock generation circuit configured to generate a first clock signal, a first voltage control circuit configured to vary a first resistance value based on a magnitude of a power supply voltage and further configured to control a magnitude of a voltage in a first charge node, based on the varied first resistance value, and a first charge pump circuit configured to charge a voltage, controlled by the first voltage control circuit, in a charge mode, based on the first clock signal, and further configured to output a first voltage, generated by the charging, as a first negative voltage.

10. 发明授权

US10566898B1 Negative voltage circuit 有权
公开(公告)号：US10566898B1
公开(公告)日：2020-02-18
申请号：US16438602
申请日：2019-06-12
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Hyun Paek , Byeong Hak Jo
IPC分类号： H02M3/07 , G05F1/10 , H02M3/335
摘要： A negative voltage circuit comprises an inverter circuit that performs a charging operation and a discharging operation, a first dual current circuit supplying a first current for a charging operation of the inverter circuit based on a start-up mode, and a second current for the charging operation of the inverter circuit based on a normal operating mode, a second dual current circuit supplying a third current for a discharging operation of the inverter circuit based on the start-up mode, and a fourth current for the discharging operation of the inverter circuit based on the normal operating mode, a load switching circuit that connects an output node of the inverter circuit to one of an output terminal of a negative voltage circuit and the second operating voltage terminal, and a load capacitor circuit connected between the output terminal and a ground to stabilize a negative voltage at the output terminal.

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