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    • 2. 发明授权
    • Touch sensing apparatus and method capable of supporting hover sensing
    • 能够支持悬停感测的触摸传感装置和方法
    • US09389740B2
    • 2016-07-12
    • US14314867
    • 2014-06-25
    • SAMSUNG ELECTRO-MECHANICS CO., LTD.
    • Byeong Hak JoMoon Suk JeongYong Il KwonTah Joon Park
    • G06F3/044
    • G06F3/044G06F2203/04108
    • Disclosed herein is a touch sensing apparatus capable of supporting hover sensing, including: a plurality of capacitance-voltage converters (C-V converters) outputting different voltage values depending on a change in capacitance of each of the sensing electrodes; a plurality of integrators integrating output voltages of each of the C-V converters; a first multiplexer multiplexing outputs of the plurality of integrators; a second multiplexer multiplexing the outputs of the plurality of integrators; a first differential amplification unit for touch sensing receiving an output of the first multiplexer and an output of the second multiplexer; a second differential amplification unit for hover sensing receiving the output of the first multiplexer and the output of the second multiplexer; and a control unit sensing a touch event or a hover event, thereby removing a common noise to accurately sense both the touch event and the hover event.
    • 这里公开了一种能够支持悬停感测的触摸感测装置,包括:多个电容电压转换器(C-V转换器),其根据每个感测电极的电容变化输出不同的电压值; 多个积分器,其对每个C-V转换器的输出电压进行积分; 第一多路复用器复用多个积分器的输出; 多路复用多个积分器的输出的第二多路复用器; 用于触摸感测的第一差分放大单元,接收第一多路复用器的输出和第二多路复用器的输出; 第二差分放大单元,用于悬停感测接收第一多路复用器的输出和第二多路复用器的输出; 以及感测触摸事件或悬停事件的控制单元,从而去除公共噪声以准确地感测触摸事件和悬停事件。
    • 3. 发明授权
    • High voltage driver using low voltage transistor
    • 高压驱动器采用低压晶体管
    • US09270255B2
    • 2016-02-23
    • US14305804
    • 2014-06-16
    • SAMSUNG ELECTRO-MECHANICS CO., LTD.
    • Yong Il KwonMoon Suk JeongTah Joon Park
    • H03K3/00H03K3/012H03K17/687
    • H03K3/012H03K17/102H03K17/687
    • A high voltage driver may include: a low side switching unit including first to n-th N-channel metal oxide semiconductor (NMOS) transistors; a high side switching unit including first and second to n-th P-channel MOS (PMOS) transistors; a voltage dividing unit dividing a voltage between the output terminal and the ground; a first constant voltage unit providing a constant voltage and a unidirectional signal path between a source and a gate of each of the first to n-th NMOS transistors; a second constant voltage unit providing a constant voltage and a unidirectional signal path between a source and a gate of each of the first to n-th PMOS transistors; a first charging unit providing a charged voltage to each of the gates of the second to n-th NMOS transistors; and a second charging unit providing a charged voltage to each of the gates of the second to n-th PMOS transistors.
    • 高电压驱动器可以包括:包括第一至第n N沟道金属氧化物半导体(NMOS)晶体管的低侧开关单元; 包括第一至第n至第n个P沟道MOS(PMOS)晶体管的高侧开关单元; 分压单元,分压输出端和地之间的电压; 第一恒压单元,在第一至第n NMOS晶体管中的每一个的源极和栅极之间提供恒定电压和单向信号路径; 第二恒压单元,在第一至第n PMOS晶体管中的每一个的源极和栅极之间提供恒定电压和单向信号路径; 第一充电单元,向第二至第n NMOS晶体管的每个栅极提供充电电压; 以及向所述第二至第n PMOS晶体管的每个栅极提供充电电压的第二充电单元。
    • 5. 发明申请
    • HIGH VOLTAGE DRIVER USING LOW VOLTAGE TRANSISTOR
    • 使用低电压晶体管的高电压驱动器
    • US20150229297A1
    • 2015-08-13
    • US14305804
    • 2014-06-16
    • SAMSUNG ELECTRO-MECHANICS CO., LTD.
    • Yong II KwonMoon Suk JeongTah Joon Park
    • H03K3/012H03K17/687
    • H03K3/012H03K17/102H03K17/687
    • A high voltage driver may include: a low side switching unit including first to n-th N-channel metal oxide semiconductor (NMOS) transistors; a high side switching unit including first and second to n-th P-channel MOS (PMOS) transistors; a voltage dividing unit dividing a voltage between the output terminal and the ground; a first constant voltage unit providing a constant voltage and a unidirectional signal path between a source and a gate of each of the first to n-th NMOS transistors; a second constant voltage unit providing a constant voltage and a unidirectional signal path between a source and a gate of each of the first to n-th PMOS transistors; a first charging unit providing a charged voltage to each of the gates of the second to n-th NMOS transistors; and a second charging unit providing a charged voltage to each of the gates of the second to n-th PMOS transistors.
    • 高电压驱动器可以包括:包括第一至第n N沟道金属氧化物半导体(NMOS)晶体管的低侧开关单元; 包括第一至第n至第n个P沟道MOS(PMOS)晶体管的高侧开关单元; 分压单元,分压输出端和地之间的电压; 第一恒压单元,在第一至第n NMOS晶体管中的每一个的源极和栅极之间提供恒定电压和单向信号路径; 第二恒压单元,在第一至第n PMOS晶体管中的每一个的源极和栅极之间提供恒定电压和单向信号路径; 第一充电单元,向第二至第n NMOS晶体管的每个栅极提供充电电压; 以及向所述第二至第n PMOS晶体管的每个栅极提供充电电压的第二充电单元。