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1. 发明授权

US10218314B2 Common gate amplifier circuit and power amplifier using the same 有权
公开(公告)号：US10218314B2
公开(公告)日：2019-02-26
申请号：US15431278
申请日：2017-02-13
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD. , Korea Advanced Institute of Science and Technology
发明人： Yun Su Jin , Gyu Suck Kim , Song Cheol Hong
IPC分类号： H03F3/217 , H03F1/02 , H03F1/56 , H03F3/193 , H03F1/22
摘要： A power amplifier includes a common source amplifier and a common gate amplifier circuit. The common source amplifier circuit has a terminal connected to a radio frequency (RF) input terminal and uses a source terminal commonly as an input terminal and an output terminal of the power amplifier. The common gate amplifier circuit has a terminal connected to the common source amplifier circuit and another terminal connected to an RF output terminal, and uses a gate terminal commonly as the input terminal and the output terminal of the power amplifier. The common gate amplifier circuit includes a Doherty amplifier including a main power amplifier and an auxiliary power amplifier that is connected to the main power amplifier in parallel.

2. 发明申请

US20160276982A1 POWER AMPLIFIER 有权
标题翻译：功率放大器
公开(公告)号：US20160276982A1
公开(公告)日：2016-09-22
申请号：US14993640
申请日：2016-01-12
申请人： SAMSUNG ELECTRO MECHANICS CO., LTD. , Korea Advanced Institute of Science and Technology
发明人： Seung Hoon Kang , Gyu Suck Kim , Song Cheol Hong
IPC分类号： H03F1/02 , H03F3/193 , H03F3/21 , H03F1/56
CPC分类号： H03F3/21 , H03F1/0222 , H03F1/0261 , H03F1/0266 , H03F1/223 , H03F1/302 , H03F1/3211 , H03F1/56 , H03F3/193 , H03F3/45188 , H03F2200/102 , H03F2200/451 , H03F2200/555
摘要： A power amplifier include an amplifier including at least one field effect transistor (FET) that operates in an amplifying stage configured to amplify an input signal, and a body controller configured to control a bias voltage of a body terminal of the FET based on a power of the input signal. The body controller performs controlling so that the bias voltage of the body terminal is reduced in response to the power of the input signal being increased. Accordingly, such a power amplifier exhibits improved linearity.
摘要翻译：功率放大器包括放大器，其包括在放大级中工作的至少一个场效应晶体管（FET），其被配置为放大输入信号;以及主体控制器，被配置为基于功率来控制所述FET的主体端子的偏置电压的输入信号。身体控制器执行控制，使得身体终端的偏置电压响应于输入信号的功率增加而减小。因此，这种功率放大器表现出提高的线性度。

3. 发明授权

US09337778B2 Adaptive bias circuit and power amplifier 有权
标题翻译：自适应偏置电路和功率放大器
公开(公告)号：US09337778B2
公开(公告)日：2016-05-10
申请号：US14498279
申请日：2014-09-26
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Chan Yong Jeong , Gyu Suck Kim , Song Cheol Hong , Tae Hwan Joo
IPC分类号： H03G3/20 , H03F3/04 , H03F1/02 , H03F3/21
CPC分类号： H03F1/0222 , H03F1/0266 , H03F3/211 , H03F2200/102 , H03F2200/504 , H03F2203/21193
摘要： A bias circuit may include an envelope detecting unit detecting an envelope of an input signal, a source voltage generating unit generating a source voltage using a power supply voltage, and an envelope amplifying unit receiving the power supply voltage and the source voltage as a driving voltage and amplifying an envelope signal detected by the envelope detecting unit to generate a first bias voltage.
摘要翻译：偏置电路可以包括检测输入信号的包络的包络检测单元，使用电源电压产生源电压的源电压生成单元，以及接收电源电压和源电压作为驱动电压的包络放大单元以及放大由包络检测单元检测的包络信号，以产生第一偏置电压。

4. 发明授权

US08493169B2 Transformer and method of manufacturing the same 有权
标题翻译：变压器及其制造方法
公开(公告)号：US08493169B2
公开(公告)日：2013-07-23
申请号：US13682262
申请日：2012-11-20
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Hyun Paek , Yoo Sam Na , Hyeon Seok Hwang , Gyu Suck Kim , Su Syeong Kim , Shin Hwan Hwang , Moon Suk Jeong
IPC分类号： H01F5/00
CPC分类号： H01F5/003 , H01F19/04 , H01F27/2804 , H01F2027/2809
摘要： Disclosed herein are a transformer and a method of manufacturing the same. The transformer includes: a primary side winding having a loop shape; a secondary side winding formed on the same plane as that of the primary side winding in a remaining section except for at least a section at which it intersects with the primary side winding and having the same loop shape as that of the primary side winding so as to be electromagnetically coupled to the primary side winding; and an intersecting section formed so that the primary side and secondary side windings having the sum of the turn numbers of 3 or more intersect with each other in a two-layer structure, wherein the intersecting section includes at least one point of intermediate node having one side connected in a first layer and the other side connected in a second layer.
摘要翻译：这里公开了变压器及其制造方法。变压器包括：具有环形的初级侧绕组; 次级侧绕组形成在与初级侧绕组相同的平面上，在除了与初级侧绕组相交的至少一个部分之外的剩余部分中，具有与初级侧绕组相同的环形形状，从而电磁耦合到初级侧绕组; 以及相交部，其形成为使得具有3个以上的转弯数之和的一次侧和次级侧绕组以两层结构彼此相交，其中，所述交叉部包括至少一个具有一个中间节点的点侧连接在第一层中，另一侧连接在第二层中。

5. 发明授权

US10171048B2 Power amplifier 有权
公开(公告)号：US10171048B2
公开(公告)日：2019-01-01
申请号：US14993505
申请日：2016-01-12
申请人： Samsung Electro-Mechanics Co., Ltd. , Korea Advanced Institute of Science and Technology
发明人： Seung Hoon Kang , Gyu Suck Kim , Song Cheol Hong
IPC分类号： H03F1/34 , H03F3/21 , H03F3/193 , H03F1/02 , H03F1/22 , H03F3/45
摘要： A power amplifier according to examples includes an amplifying circuit configured to amplify an input signal, a feedback circuit configured to feedback the amplified signal to the amplifying unit, and a feedback controlling circuit configured to control a power of the fed-back signal based on a power of the input signal. The feedback controlling unit performs controlling so that the power of the fed-back signal is increased as the power of the input signal is increased.

6. 发明授权

US09979362B2 Power amplifier 有权
公开(公告)号：US09979362B2
公开(公告)日：2018-05-22
申请号：US14993640
申请日：2016-01-12
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD. , Korea Advanced Institute of Science and Technology
发明人： Seung Hoon Kang , Gyu Suck Kim , Song Cheol Hong
IPC分类号： H03G3/20 , H03F3/21 , H03F1/56 , H03F3/193 , H03F1/22 , H03F1/32 , H03F3/45 , H03F1/02 , H03F1/30
CPC分类号： H03F3/21 , H03F1/0222 , H03F1/0261 , H03F1/0266 , H03F1/223 , H03F1/302 , H03F1/3211 , H03F1/56 , H03F3/193 , H03F3/45188 , H03F2200/102 , H03F2200/451 , H03F2200/555
摘要： A power amplifier include an amplifier including at least one field effect transistor (FET) that operates in an amplifying stage configured to amplify an input signal, and a body controller configured to control a bias voltage of a body terminal of the FET based on a power of the input signal. The body controller performs controlling so that the bias voltage of the body terminal is reduced in response to the power of the input signal being increased. Accordingly, such a power amplifier exhibits improved linearity.

7. 再颁专利

USRE49317E1 Transformer and method of manufacturing the same 有权
公开(公告)号：USRE49317E1
公开(公告)日：2022-11-29
申请号：US16713483
申请日：2019-12-13
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Hyun Paek , Yoo Sam Na , Hyeon Seok Hwang , Gyu Suck Kim , Su Gyeong Kim , Shin Hwan Hwang , Moon Suk Jeong
IPC分类号： H01F5/00 , H01F27/28 , H01F19/04
摘要： Disclosed herein are a transformer and a method of manufacturing the same. The transformer includes: a primary side winding having a loop shape; a secondary side winding formed on the same plane as that of the primary side winding in a remaining section except for at least a section at which it intersects with the primary side winding and having the same loop shape as that of the primary side winding so as to be electromagnetically coupled to the primary side winding; and an intersecting section formed so that the primary side and secondary side windings having the sum of the turn numbers of 3 or more intersect with each other in a two-layer structure, wherein the intersecting section includes at least one point of intermediate node having one side connected in a first layer and the other side connected in a second layer.

8. 发明授权

US09923519B2 Power amplifier and phase correction method therefor 有权
公开(公告)号：US09923519B2
公开(公告)日：2018-03-20
申请号：US14992490
申请日：2016-01-11
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Gyu Suck Kim
IPC分类号： H03F1/34 , H03F1/02 , H03F3/21 , H03F1/56 , H03F1/32 , H03F3/191
CPC分类号： H03F1/0205 , H03F1/3223 , H03F1/56 , H03F3/191 , H03F3/21 , H03F2200/144 , H03F2200/451 , H03F2201/3236
摘要： A power amplifier apparatus may include an amplifier configured to amplify an input signal and a delay transferring circuit connected between an input terminal and an output terminal of the amplifier, the delay transferring circuit configured to delay the input signal to transfer the delayed input signal to the output terminal of the amplifier.

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