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1. 再颁专利

USRE49317E1 Transformer and method of manufacturing the same 有权
公开(公告)号：USRE49317E1
公开(公告)日：2022-11-29
申请号：US16713483
申请日：2019-12-13
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Hyun Paek , Yoo Sam Na , Hyeon Seok Hwang , Gyu Suck Kim , Su Gyeong Kim , Shin Hwan Hwang , Moon Suk Jeong
IPC分类号： H01F5/00 , H01F27/28 , H01F19/04
摘要： Disclosed herein are a transformer and a method of manufacturing the same. The transformer includes: a primary side winding having a loop shape; a secondary side winding formed on the same plane as that of the primary side winding in a remaining section except for at least a section at which it intersects with the primary side winding and having the same loop shape as that of the primary side winding so as to be electromagnetically coupled to the primary side winding; and an intersecting section formed so that the primary side and secondary side windings having the sum of the turn numbers of 3 or more intersect with each other in a two-layer structure, wherein the intersecting section includes at least one point of intermediate node having one side connected in a first layer and the other side connected in a second layer.

2. 发明授权

US10903799B2 Variable gain low noise amplifying apparatus with phase distortion compensation 有权
公开(公告)号：US10903799B2
公开(公告)日：2021-01-26
申请号：US16169133
申请日：2018-10-24
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Hyun Jin Yoo , Jong Mo Lim , Yoo Sam Na , Hyung Jun Cho , Yoo Hwan Kim , Hyun Hwan Yoo
IPC分类号： H03G3/30 , H03F1/32 , H03F3/00
摘要： An amplifying apparatus includes a variable gain amplifying circuit configured to operate in a gain mode selected from a plurality of gain modes in response to a first control signal during operation in an amplification mode, a variable attenuation circuit configured to have an attenuation value that is adjusted in response to a second control signal, and a phase compensation value which compensates for a phase distortion in the selected gain mode, and a control circuit configured to control the selecting of the gain mode, the adjusting of the attenuation value and the phase compensation value, based on the first and second control signals.

3. 发明授权

US10886058B2 Inductor and low-noise amplifier including the same 有权
公开(公告)号：US10886058B2
公开(公告)日：2021-01-05
申请号：US16520395
申请日：2019-07-24
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Hyung Jun Cho , Jong Mo Lim , Hyun Hwan Yoo , Hyun Jin Yoo , Yoo Hwan Kim , Yoo Sam Na
IPC分类号： H03F1/22 , H01F27/28 , H03F1/56 , H03F3/04
摘要： An inductor includes a substrate, and a first coil pattern disposed on one surface of the substrate and having a spiral shape comprising a plurality of turns, wherein as the first coil pattern extends inwardly towards a center of the first coil pattern, a pattern width of the first coil pattern decreases while a center-to-center distance between two adjacent turns of the first coil pattern increases.

4. 发明授权

US10826442B2 Variable gain low noise amplifier with phase compensation 有权
公开(公告)号：US10826442B2
公开(公告)日：2020-11-03
申请号：US16196173
申请日：2018-11-20
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Hyun Jin Yoo , Jong Mo Lim , Yoo Hwan Kim , Hyung Jun Cho , Hyun Hwan Yoo , Yoo Sam Na
IPC分类号： H03F1/34 , H03F3/16 , H03G3/30
摘要： An apparatus includes an amplifying circuit configured to include stacked first and second transistors, and to amplify a signal input from an input terminal during an operation in an amplifying mode, and provide the amplified signal to an output terminal, and a negative feedback circuit comprising first to nth sub-negative feedback circuits, each corresponding to a separate gain mode included in the amplifying mode, wherein the negative feedback circuit is configured to provide a variable resistance value to determine a negative feedback gain based on each of the separate gain modes.

5. 发明授权

US10505579B2 Radio frequency switching device for fast switching operation 有权
公开(公告)号：US10505579B2
公开(公告)日：2019-12-10
申请号：US16237834
申请日：2019-01-02
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Byeong Hak Jo , Hyun Paek , Jeong Hoon Kim , Yoo Hwan Kim , Yoo Sam Na
IPC分类号： H04M1/00 , H04B1/40 , H03K17/687 , H03K17/28 , H03K17/693
CPC分类号： H04B1/40 , H03K17/28 , H03K17/6874 , H03K17/693
摘要： A radio frequency switching device includes a switching circuit including first and second transistors; a gate resistor circuit including a first gate resistor and a second gate resistor, the first gate resistor connected to a gate of the first transistor and the second gate resistor connected to a gate of the second transistor; a gate buffer circuit including a first gate buffer and a second gate buffer, the first gate buffer being connected to the first gate resistor to provide a first gate signal to the first transistor through the first gate resistor, the second gate buffer being connected to the second gate resistor to provide a second gate signal to the second transistor through the second gate resistor; and a delay circuit to generate the first gate signal having a first switching time and the second gate signal having a second switching time different than the first switching time.

6. 发明授权

US09531375B2 Radio frequency switch circuit 有权
标题翻译：射频开关电路
公开(公告)号：US09531375B2
公开(公告)日：2016-12-27
申请号：US14609297
申请日：2015-01-29
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Yoo Sam Na , Jong Myeong Kim , Yoo Hwan Kim , Hyun Hwan Yoo , Dae Seok Jang , Hyun Jin Yoo
IPC分类号： H03K17/687 , H03K17/06 , H03K17/693
CPC分类号： H03K17/687 , H03K17/063 , H03K17/693 , H03K2017/066
摘要： A radio frequency switch circuit may include: a first switch circuit unit connected between a first signal port for transmitting and receiving a signal and a common connection node and operated by a first gate signal; a second switch circuit unit connected between a second signal port for transmitting and receiving a signal and the common connection node and operated by a second gate signal; a first shunt circuit unit including first and second shunt units connected to each other in series between a first connection node connected to the first signal port and a ground, the first shunt unit being operated by the first gate signal and the second shunt unit being operated by the second gate signal; and a second shunt circuit unit connected between a second connection node connected to the second signal port and the ground and operated by the first gate signal.
摘要翻译：射频开关电路可以包括：第一开关电路单元，连接在用于发送和接收信号的第一信号端口和公共连接节点之间，并由第一门信号操作; 第二开关电路单元，连接在用于发送和接收信号的第二信号端口和公共连接节点之间并由第二门信号操作; 第一分流电路单元，包括在连接到第一信号端口的第一连接节点和地之间彼此串联连接的第一和第二分流单元，第一分流单元由第一栅极信号操作，第二分流单元被操作通过第二个门信号; 以及第二分流电路单元，连接在连接到第二信号端口的第二连接节点和地之间并由第一门信号操作。

7. 发明授权

US10979007B2 Amplification device with isolation characteristics 有权
公开(公告)号：US10979007B2
公开(公告)日：2021-04-13
申请号：US16282391
申请日：2019-02-22
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Hyung Jun Cho , Hyun Jin Yoo , Jong Mo Lim , Hyun Hwan Yoo , Yoo Sam Na , Yoo Hwan Kim
IPC分类号： H03F1/12 , H03F3/24 , H03F1/56 , H03F1/02 , H03F3/19
摘要： An amplifying device includes: an amplifying circuit connected between an input terminal and an output terminal and amplifying a signal input in an amplification mode; and a bypass circuit including a filter connected to a bypass path for bypassing the amplifying circuit, wherein the bypass path is in an off-state in the amplification mode and is in an on-state in a bypass mode, and the filter bypasses an input high-frequency signal to ground, in the amplification mode.

8. 发明授权

US10903836B2 Radio-frequency switch with voltage equalization 有权
公开(公告)号：US10903836B2
公开(公告)日：2021-01-26
申请号：US16832404
申请日：2020-03-27
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Byeong Hak Jo , Yoo Sam Na , Hyun Paek , Sol A Kim , Jeong Hoon Kim , Jong Mo Lim
IPC分类号： H04B1/04 , H04B1/44 , H03K17/687 , H03K17/693
摘要： A radio-frequency switch includes a first series switch including a plurality of series field-effect transistors (FETs) connected in series between a first terminal and a second terminal, a first shunt switch including a plurality of shunt FETs connected in series between the first terminal and a first ground terminal, and a first shunt gate resistor circuit including a plurality of gate resistors respectively connected to gates of the plurality of shunt FETs of the first shunt switch. Respective resistance values of the plurality of gate resistors of the first shunt gate resistor circuit successively increase in a direction away from the first ground terminal toward the first terminal.

9. 发明授权

US10778175B2 Coupler circuit with phase compensation function 有权
公开(公告)号：US10778175B2
公开(公告)日：2020-09-15
申请号：US16172002
申请日：2018-10-26
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Jong Mo Lim , Hyun Jin Yoo , Yoo Sam Na , Hyun Hwan Yoo , Hyung Jun Cho , Yoo Hwan Kim
IPC分类号： H03F3/14 , H03H7/18 , H01P5/16 , H03F3/195 , H03F3/213
摘要： A coupler circuit includes: a signal line disposed between a first terminal and a second terminal; a coupling line disposed between a coupling port and an isolation port such that the coupling line is coupled to the signal line and is configured to extract a coupling signal from the signal line; and a coupling adjusting circuit connected to the coupling port and the isolation port, and configured to reduce changes in an amount of coupling according to a change in a frequency band of a signal passing through the signal line.

10. 发明授权

US10686413B2 Low noise amplifier circuit with multiple-input multiple-output (MIMO) structure 有权
公开(公告)号：US10686413B2
公开(公告)日：2020-06-16
申请号：US16166295
申请日：2018-10-22
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Hyun Hwan Yoo , Jong Mo Lim , Yoo Sam Na , Hyun Jin Yoo , Hyung Jun Cho , Yoo Hwan Kim
IPC分类号： H03F1/32 , H03F3/195 , H04B7/0413
摘要： A low noise amplifier circuit includes a first low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among first and second band signals; a second low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among third and fourth band signals; an output DPDT circuit including a first input terminal connected to the first low noise amplifier, a second input terminal connected to the second low noise amplifier, and a first output terminal and a second output terminal for selectively outputting signals input through the first input terminal and the second input terminal; and a control circuit performing an amplification control and a switching control for the first and second low noise amplifiers and the output DPDT circuit in response to a predetermined communications scheme.

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