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1. 发明授权

US09245738B2 High electron mobility transistor and method of manufacturing the same 有权
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US09245738B2
公开(公告)日：2016-01-26
申请号：US14091822
申请日：2013-11-27
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Jong-seob Kim , Ki-yeol Park , Young-hwan Park , Jai-kwang Shin , Jae-joon Oh , Hyuk-soon Choi , In-jun Hwang
IPC分类号： H01L21/02 , H01L29/66 , H01L29/778 , H01L29/861 , H01L29/06 , H01L29/10 , H01L29/20
CPC分类号： H01L21/02109 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/66462 , H01L29/7786 , H01L29/8613
摘要： According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer; a channel supply layer on the channel layer; a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer; a gate electrode on a part of the channel supply layer between the source electrode and the drain electrode; a first depletion-forming layer between the gate electrode and the channel supply layer; and a at least one second depletion-forming layer on the channel supply layer between the gate electrode and the drain electrode. The at least one second depletion-forming layer is electrically connected to the source electrode.
摘要翻译：根据示例性实施例，高电子迁移率晶体管（HEMT）包括沟道层; 通道层上的通道供应层; 在所述沟道层和所述沟道供给层之一上彼此隔开的源电极和漏电极; 源电极和漏电极之间的沟道供给层的一部分上的栅电极; 在栅电极和沟道供应层之间的第一耗尽层; 以及在栅电极和漏电极之间的沟道供应层上的至少一个第二耗尽层。所述至少一个第二耗尽形成层电连接到所述源电极。

2. 发明授权

US09299800B2 Methods of manufacturing high electron mobility transistors 有权
标题翻译：制造高电子迁移率晶体管的方法
公开(公告)号：US09299800B2
公开(公告)日：2016-03-29
申请号：US14687488
申请日：2015-04-15
申请人： Samsung Electronics Co., Ltd.
发明人： Hyuk-soon Choi , Jung-hee Lee , Jai-kwang Shin , Jae-joon Oh , Jong-bong Ha , Jong-seob Kim , In-jun Hwang , Ki-ha Hong , Ki-sik Im , Ki-won Kim , Dong-seok Kim
IPC分类号： H01L29/66 , H01L21/762 , H01L29/08 , H01L29/20 , H01L29/423 , H01L29/778 , H01L21/02 , H01L29/201 , H01L29/205 , H01L29/207
CPC分类号： H01L29/66462 , H01L21/0254 , H01L21/76237 , H01L29/0847 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/4236 , H01L29/7787
摘要： The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.
摘要翻译：所述方法可以包括在衬底上形成第一材料层，增加第一材料层的电阻，以及在第一材料层上形成彼此间隔开的源图案和漏极图案，带隙为源极和漏极图案大于第一材料层的带隙。

3. 发明授权

US09202904B2 Power device chip and method of manufacturing the power device chip 有权
标题翻译：功率器件芯片和制造功率器件芯片的方法
公开(公告)号：US09202904B2
公开(公告)日：2015-12-01
申请号：US14224769
申请日：2014-03-25
申请人： Samsung Electronics Co., Ltd.
发明人： In-jun Hwang , Jong-seob Kim , Jae-joon Oh
IPC分类号： H01L29/66 , H01L29/778 , H01L29/16 , H01L29/40
CPC分类号： H01L29/778 , H01L29/1608 , H01L29/402 , H01L29/7787
摘要： According to example embodiments, a power device chip includes a plurality of unit power devices classified into a plurality of sectors, a first pad and a second pad. At least one of the first and second pads is divided into a number of pad parts equal to a number of the plurality of sectors. The first pad is connected to first electrodes of the plurality of unit power devices, and the second pad is connected to second electrodes of the plurality of unit power devices. The unit power devices may be diodes. The power device chip may further include third electrodes in the plurality of unit power devices, and a third pad may be connected to the third electrodes. In this case, the unit power devices may be high electron mobility transistors (HEMTs). Pad parts connected to defective sectors may be excluded from bonding.
摘要翻译：根据示例性实施例，功率器件芯片包括分为多个扇区的多个单位功率器件，第一焊盘和第二焊盘。第一和第二焊盘中的至少一个被分成等于多个扇区的数量的多个焊盘部分。第一焊盘连接到多个单元功率器件的第一电极，第二焊盘连接到多个单元功率器件的第二电极。单元功率器件可以是二极管。功率器件芯片还可以包括多个单位功率器件中的第三电极，并且第三焊盘可以连接到第三电极。在这种情况下，单位功率器件可以是高电子迁移率晶体管（HEMT）。连接到缺陷扇区的焊盘部件可能被排除在接合之外。

4. 发明授权

US08785944B2 High electron mobility transistor 有权
标题翻译：高电子迁移率晶体管
公开(公告)号：US08785944B2
公开(公告)日：2014-07-22
申请号：US13707162
申请日：2012-12-06
申请人： Samsung Electronics Co., Ltd.
发明人： In-jun Hwang , Jae-joon Oh , Jae-won Lee , Hyo-ji Choi , Jong-bong Ha
IPC分类号： H01L29/778 , H01L29/20 , H01L29/423 , H01L29/43
CPC分类号： H01L27/0629 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/778 , H01L29/7787
摘要： A high electron mobility transistor (HEMT) according to example embodiments includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a reverse diode gate structure on the second semiconductor layer. A source and a drain may be on at least one of the first semiconductor layer and the second semiconductor layer. A gate electrode may be on the reverse diode gate structure.
摘要翻译：根据示例实施例的高电子迁移率晶体管（HEMT）包括第一半导体层，第一半导体层上的第二半导体层和第二半导体层上的反向二极管栅极结构。源极和漏极可以在第一半导体层和第二半导体层中的至少一个上。栅电极可以在反向二极管栅极结构上。

5. 发明授权

US09608100B2 High electron mobility transistor and method of manufacturing the same 有权
公开(公告)号：US09608100B2
公开(公告)日：2017-03-28
申请号：US13714957
申请日：2012-12-14
申请人： Samsung Electronics Co., Ltd.
发明人： Hyuk-soon Choi , Jong-seob Kim , Jai-kwang Shin , Jae-joon Oh , Jong-bong Ha , In-jun Hwang
IPC分类号： H01L29/417 , H01L29/778 , H01L29/66 , H01L29/20
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/4175 , H01L29/66431 , H01L29/66462 , H01L29/7786
摘要： According to example embodiments, a high electron mobility transistor (HEMT) includes: stack including a buffer layer, a channel layer containing a two dimensional electron gas (2DEG) channel, and a channel supply layer sequentially stacked on each other, the stack defining a first hole and a second hole that are spaced apart from each other. A first electrode, a second electrode, and third electrode are spaced apart from each other along a first surface of the channel supply layer. A first pad is on the buffer layer and extends through the first hole of the stack to the first electrode. A second pad is on the buffer layer and extends through the second hole of the stack to the second electrode. A third pad is under the stack and electrically connected to the third electrode.

6. 发明授权

US09117890B2 High-electron mobility transistor and method of manufacturing the same 有权
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US09117890B2
公开(公告)日：2015-08-25
申请号：US13910417
申请日：2013-06-05
申请人： Samsung Electronics Co., Ltd.
发明人： Jong-seob Kim , Kyoung-yeon Kim , Joon-yong Kim , Jai-kwang Shin , Jae-joon Oh , Hyuk-soon Choi , Jong-bong Ha , Sun-kyu Hwang , In-jun Hwang
IPC分类号： H01L29/66 , H01L29/778 , H01L29/10 , H01L29/417 , H01L29/20
CPC分类号： H01L29/778 , H01L29/1066 , H01L29/2003 , H01L29/41766 , H01L29/66431 , H01L29/66462 , H01L29/7786
摘要： According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.
摘要翻译：根据示例性实施例，HEMT包括在沟道层上的沟道供应层，沟道供应层上的p型半导体结构，p型半导体结构上的栅电极以及与两侧隔开的源极和漏极的栅电极。通道供应层可以具有比沟道层更高的能量带隙。 p型半导体结构可以具有与沟道供给层不同的能量带隙。 p型半导体结构可以包括在沟道供应层上的空穴注入层（HIL），并且被配置为在导通状态下将空穴注入至少一个沟道层和沟道电源。 p型半导体结构可以在HIL的一部分上包括耗尽形成层。耗尽形成层可以具有不同于HIL的掺杂剂浓度的掺杂剂浓度。

7. 发明授权

US09252253B2 High electron mobility transistor 有权
标题翻译：高电子迁移率晶体管
公开(公告)号：US09252253B2
公开(公告)日：2016-02-02
申请号：US14330072
申请日：2014-07-14
申请人： Samsung Electronics Co., Ltd.
发明人： In-jun Hwang
IPC分类号： H01L29/66 , H01L29/778 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/20
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/402 , H01L29/41725 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer having a 2-dimensional electron gas (2DEG), a channel supply layer on the channel layer, a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer, at least one channel depletion layer on the channel supply layer; a gate electrode on at least a part of the channel depletion layer, and at least one bridge connecting the channel depletion layer and the source electrode. The channel depletion layer is configured to form a depletion region in the 2DEG. The HEMT has a ratio of a first impedance to a second impedance that is a uniform value. The first impedance is between the gate electrode and the channel depletion layer. The second impedance is between the source electrode and the channel depletion layer.
摘要翻译：根据示例性实施例，高电子迁移率晶体管（HEMT）包括具有二维电子气体（2DEG）的沟道层，沟道层上的沟道供应层，源电极和漏电极彼此间隔开沟道层和沟道供应层中的一个，沟道供应层上的至少一个沟道耗尽层; 在沟道耗尽层的至少一部分上的栅电极，以及连接沟道耗尽层和源电极的至少一个桥。通道耗尽层被配置为在2DEG中形成耗尽区。 HEMT具有作为均匀值的第一阻抗与第二阻抗的比率。第一阻抗位于栅电极和沟道耗尽层之间。第二阻抗位于源电极和沟道耗尽层之间。

8. 发明授权

US09076850B2 High electron mobility transistor 有权
标题翻译：高电子迁移率晶体管
公开(公告)号：US09076850B2
公开(公告)日：2015-07-07
申请号：US13953165
申请日：2013-07-29
申请人： Samsung Electronics Co., Ltd.
发明人： In-jun Hwang , Hyo-ji Choi , Jong-seob Kim , Jae-joon Oh
IPC分类号： H01L29/66 , H01L29/778 , H01L29/36 , H01L29/423 , H01L29/06 , H01L29/20
CPC分类号： H01L29/778 , H01L29/06 , H01L29/2003 , H01L29/36 , H01L29/42364 , H01L29/7787
摘要： According to example embodiments, a high electron mobility transistor includes: a channel layer including a 2-dimensional electron gas (2DEG); a contact layer on the channel layer; a channel supply layer on the contact layer; a gate electrode on a portion of the channel layer; and source and drain electrodes on at least one of the channel layer, the contact layer, and the channel supply layer. The contact layer is configured to form an ohmic contact on the channel layer. The contact layer is n-type doped and contains a Group III-V compound semiconductor. The source electrode and the drain electrode are spaced apart from opposite sides of the gate electrode.
摘要翻译：根据示例性实施例，高电子迁移率晶体管包括：包括二维电子气（2DEG）的沟道层; 沟道层上的接触层; 接触层上的沟道供应层; 沟道层的一部分上的栅电极; 以及在沟道层，接触层和沟道供应层中的至少一个上的源极和漏极。接触层被配置为在沟道层上形成欧姆接触。接触层为n型掺杂并含有III-V族化合物半导体。源电极和漏电极与栅电极的相对侧间隔开。

9. 发明授权

US08681542B2 Magnetic memory devices and methods of operating the same 有权
标题翻译：磁存储器件及其操作方法
公开(公告)号：US08681542B2
公开(公告)日：2014-03-25
申请号：US13939879
申请日：2013-07-11
申请人： Samsung Electronics Co., Ltd.
发明人： In-jun Hwang
IPC分类号： G11C11/15
CPC分类号： G11C11/15 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C19/0841
摘要： A magnetic memory device includes: a free layer for storing information; and a reference layer disposed on a first surface of the free layer. The reference layer includes at least two magnetic domains and a magnetic domain wall between the at least two magnetic domains. The reference layer extends past both ends of the free layer. The magnetic memory device further includes a switching element connected to a second surface of the free layer. Another magnetic memory device includes: a first reference layer having a first magnetic domain wall; a second reference layer having a second magnetic domain wall; and a memory structure between the first and second reference layers. The memory structure includes: a first free layer adjacent to the first reference layer; a second free layer adjacent to the second reference layer; and a switching element between the first and second free layers.
摘要翻译：磁存储器件包括：用于存储信息的自由层; 以及设置在自由层的第一表面上的参考层。参考层包括至少两个磁畴和至少两个磁畴之间的磁畴壁。参考层延伸经过自由层的两端。磁存储器件还包括连接到自由层的第二表面的开关元件。另一磁存储器件包括：具有第一磁畴壁的第一参考层; 具有第二磁畴壁的第二参考层; 以及第一和第二参考层之间的存储器结构。存储器结构包括：与第一参考层相邻的第一自由层; 与第二参考层相邻的第二自由层; 以及第一和第二自由层之间的开关元件。

10. 发明授权

US09859410B2 High electron mobility transistors and methods of fabricating the same 有权
公开(公告)号：US09859410B2
公开(公告)日：2018-01-02
申请号：US14497585
申请日：2014-09-26
申请人： Samsung Electronics Co., Ltd.
发明人： In-jun Hwang , Jai-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , Ki-ha Hong
IPC分类号： H01L29/778 , H01L29/267 , H01L29/51 , H01L29/66 , H01L29/08 , H01L29/10 , H01L29/20 , H01L29/423
CPC分类号： H01L29/778 , H01L29/0847 , H01L29/1029 , H01L29/1066 , H01L29/2003 , H01L29/267 , H01L29/4236 , H01L29/42364 , H01L29/517 , H01L29/66431 , H01L29/66462 , H01L29/7785 , H01L29/7786
摘要： A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.

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