专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09379102B2 Nitride-based semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US09379102B2
公开(公告)日：2016-06-28
申请号：US13926553
申请日：2013-06-25
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Ki-yeol Park , Young-hwan Park , Jai-kwang Shin , Jae-joon Oh
IPC分类号： H01L29/778 , H01L27/06 , H01L21/8252
CPC分类号： H01L27/0629 , H01L21/8252 , H01L27/0605
摘要： A nitride-based semiconductor diode includes a substrate, a first semiconductor layer disposed on the substrate, and a second semiconductor layer disposed on the first semiconductor layer. The first and second semiconductor layers include a nitride-based semiconductor. A first portion of the second semiconductor layer may have a thickness thinner than a second portion of the second semiconductor layer. The diode may further include an insulating layer disposed on the second semiconductor layer, a first electrode covering the first portion of the second semiconductor layer and forming an ohmic contact with the first semiconductor layer and the second semiconductor layer, and a second electrode separated from the first electrode, the second electrode forming an ohmic contact with the first semiconductor layer and the second semiconductor layer.
摘要翻译：氮化物系半导体二极管包括衬底，设置在衬底上的第一半导体层以及设置在第一半导体层上的第二半导体层。第一和第二半导体层包括氮化物基半导体。第二半导体层的第一部分可以具有比第二半导体层的第二部分薄的厚度。二极管还可以包括设置在第二半导体层上的绝缘层，覆盖第二半导体层的第一部分并与第一半导体层和第二半导体层形成欧姆接触的第一电极，以及与第二半导体层分开的第二电极第一电极，第二电极与第一半导体层和第二半导体层形成欧姆接触。

2. 发明授权

US09053964B2 Semiconductor devices including a first and second HFET and methods of manufacturing the same 有权
标题翻译：包括第一和第二HFET的半导体器件及其制造方法
公开(公告)号：US09053964B2
公开(公告)日：2015-06-09
申请号：US13922395
申请日：2013-06-20
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Woong-je Sung , Jai-kwang Shin , Jae-joon Oh
IPC分类号： H01L31/0328 , H01L27/088 , H01L29/66 , H01L29/778 , H01L21/8252 , H01L27/06 , H01L27/085 , H01L29/20
CPC分类号： H01L27/0883 , H01L21/8252 , H01L27/0605 , H01L27/0694 , H01L27/085 , H01L29/2003 , H01L29/66431 , H01L29/66462 , H01L29/7787
摘要： Example embodiments relate to semiconductor devices and/or methods of manufacturing the same. According to example embodiments, a semiconductor device may include a first heterojunction field effect transistor (HFET) on a first surface of a substrate, and a second HFET. A second surface of the substrate may be on the second HFET. The second HFET may have different properties (characteristics) than the first HFET. One of the first and second HFETs may be of an n type, while the other thereof may be of a p type. The first and second HFETs may be high-electron-mobility transistors (HEMTs). One of the first and second HFETs may have normally-on properties, while the other thereof may have normally-off properties.
摘要翻译：示例性实施例涉及半导体器件和/或其制造方法。根据示例实施例，半导体器件可以包括在衬底的第一表面上的第一异质结场效应晶体管（HFET）和第二HFET。衬底的第二表面可以在第二HFET上。第二HFET可以具有与第一HFET不同的特性（特性）。第一和第二HFET中的一个可以是n型，而另一个可以是p型。第一和第二HFET可以是高电子迁移率晶体管（HEMT）。第一和第二HFET中的一个可以具有通常的属性，而另一个可以具有正常的属性。

3. 发明授权

US08772834B2 High electron mobility transistor and method of driving the same 有权
标题翻译：高电子迁移率晶体管及其驱动方法
公开(公告)号：US08772834B2
公开(公告)日：2014-07-08
申请号：US13868579
申请日：2013-04-23
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Jong-seob Kim , Ki-yeol Park , Young-hwan Park , Jae-joon Oh , Jong-bong Ha , Jai-kwang Shin
IPC分类号： H01L29/00 , H01L29/205 , H01L29/778 , H01L29/66
CPC分类号： H01L29/7781 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/66431 , H01L29/66462 , H01L29/778 , H01L29/7782 , H01L29/7786 , H03K3/012
摘要： According to example embodiments, a HEMT includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode spaced apart on the channel layer, a depletion-forming layer on the channel supply layer, and a plurality of gate electrodes on the depletion-forming layer between the source electrode and the drain electrode. The channel supply layer is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured to form a depletion region in the 2DEG. The plurality of gate electrodes include a first gate electrode and a second gate electrode spaced apart from each other.
摘要翻译：根据示例性实施例，HEMT包括沟道层，沟道层上的沟道供应层，在沟道层上隔开的源电极和漏电极，沟道供应层上的耗尽形成层，以及多个在源电极和漏电极之间的耗尽形成层上的栅电极。通道供给层被配置为在通道层中诱导二维电子气（2DEG）。耗尽形成层被配置为在2DEG中形成耗尽区。多个栅电极包括彼此间隔开的第一栅电极和第二栅电极。

4. 发明授权

US09608100B2 High electron mobility transistor and method of manufacturing the same 有权
公开(公告)号：US09608100B2
公开(公告)日：2017-03-28
申请号：US13714957
申请日：2012-12-14
申请人： Samsung Electronics Co., Ltd.
发明人： Hyuk-soon Choi , Jong-seob Kim , Jai-kwang Shin , Jae-joon Oh , Jong-bong Ha , In-jun Hwang
IPC分类号： H01L29/417 , H01L29/778 , H01L29/66 , H01L29/20
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/4175 , H01L29/66431 , H01L29/66462 , H01L29/7786
摘要： According to example embodiments, a high electron mobility transistor (HEMT) includes: stack including a buffer layer, a channel layer containing a two dimensional electron gas (2DEG) channel, and a channel supply layer sequentially stacked on each other, the stack defining a first hole and a second hole that are spaced apart from each other. A first electrode, a second electrode, and third electrode are spaced apart from each other along a first surface of the channel supply layer. A first pad is on the buffer layer and extends through the first hole of the stack to the first electrode. A second pad is on the buffer layer and extends through the second hole of the stack to the second electrode. A third pad is under the stack and electrically connected to the third electrode.

5. 发明授权

US09129835B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09129835B2
公开(公告)日：2015-09-08
申请号：US13868490
申请日：2013-04-23
申请人： Samsung Electronics Co., Ltd.
发明人： Woong-je Sung , Chang-yong Um , Jai-kwang Shin
IPC分类号： H01L29/76 , H01L29/94 , H01L27/088 , H01L21/82 , H01L21/8232 , H01L21/04 , H01L29/78
CPC分类号： H01L27/088 , H01L21/0455 , H01L21/0475 , H01L21/049 , H01L21/8213 , H01L21/8232 , H01L29/7827
摘要： A semiconductor device includes a drift layer including a trench formed on a semiconductor substrate. A well in the drift layer overlaps an edge of the trench, and at least one gate electrode is formed at this overlapping edge region. The drift layer and semiconductor may be doped with a first type of impurity and the well may be doped with a second type of impurity. Through this arrangement, an improved distribution of carriers may be formed in the drift layer.
摘要翻译：半导体器件包括漂移层，其包括在半导体衬底上形成的沟槽。漂移层中的阱与沟槽的边缘重叠，并且在该重叠边缘区域形成至少一个栅电极。漂移层和半导体可以掺杂第一类型的杂质，并且阱可以掺杂第二类型的杂质。通过这种布置，可以在漂移层中形成改进的载流子分布。

6. 发明授权

US09117890B2 High-electron mobility transistor and method of manufacturing the same 有权
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US09117890B2
公开(公告)日：2015-08-25
申请号：US13910417
申请日：2013-06-05
申请人： Samsung Electronics Co., Ltd.
发明人： Jong-seob Kim , Kyoung-yeon Kim , Joon-yong Kim , Jai-kwang Shin , Jae-joon Oh , Hyuk-soon Choi , Jong-bong Ha , Sun-kyu Hwang , In-jun Hwang
IPC分类号： H01L29/66 , H01L29/778 , H01L29/10 , H01L29/417 , H01L29/20
CPC分类号： H01L29/778 , H01L29/1066 , H01L29/2003 , H01L29/41766 , H01L29/66431 , H01L29/66462 , H01L29/7786
摘要： According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.
摘要翻译：根据示例性实施例，HEMT包括在沟道层上的沟道供应层，沟道供应层上的p型半导体结构，p型半导体结构上的栅电极以及与两侧隔开的源极和漏极的栅电极。通道供应层可以具有比沟道层更高的能量带隙。 p型半导体结构可以具有与沟道供给层不同的能量带隙。 p型半导体结构可以包括在沟道供应层上的空穴注入层（HIL），并且被配置为在导通状态下将空穴注入至少一个沟道层和沟道电源。 p型半导体结构可以在HIL的一部分上包括耗尽形成层。耗尽形成层可以具有不同于HIL的掺杂剂浓度的掺杂剂浓度。

7. 发明授权

US09087704B2 Semiconductor devices and methods of manufacturing the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09087704B2
公开(公告)日：2015-07-21
申请号：US13790319
申请日：2013-03-08
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Young-hwan Park , Ki-yeol Park , Jai-kwang Shin , Jae-joo Oh , Jong-bong Ha
IPC分类号： H01L29/66 , H01L29/84 , H01L21/338 , H01L27/06 , H01L21/8252
CPC分类号： H01L27/0605 , H01L21/8252 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/32 , H01L29/41766 , H01L29/42316 , H01L29/4236 , H01L29/4238 , H01L29/66212 , H01L29/66462 , H01L29/7787 , H01L29/872
摘要： According to example embodiments, a semiconductor device may include a high electron mobility transistor (HEMT) on a first region of a substrate, and a diode on a second region of the substrate. The HEMT may be electrically connected to the diode. The HEMT and the diode may be formed on an upper surface of the substrate such as to be spaced apart from each other in a horizontal direction. The HEMT may include a semiconductor layer. The diode may be formed on another portion of the substrate on which the semiconductor layer is not formed. The HEMT and the diode may be cascode-connected to each other.
摘要翻译：根据示例性实施例，半导体器件可以包括在衬底的第一区域上的高电子迁移率晶体管（HEMT）和在衬底的第二区域上的二极管。 HEMT可以电连接到二极管。 HEMT和二极管可以形成在基板的上表面上，以便在水平方向上彼此间隔开。 HEMT可以包括半导体层。二极管可以形成在其上未形成半导体层的衬底的另一部分上。 HEMT和二极管可以彼此共源共存。

8. 发明授权

US08907377B2 High electron mobility transistor and method of manufacturing the same 有权
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US08907377B2
公开(公告)日：2014-12-09
申请号：US13752821
申请日：2013-01-29
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Ki-yeol Park , Young-hwan Park , Jai-kwang Shin , Jae-joon Oh , Hyuk-soon Choi , Jong-bong Ha
IPC分类号： H01L29/66 , H01L29/778 , H01L29/417 , H01L29/40 , H01L29/20
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/402 , H01L29/407 , H01L29/41758 , H01L29/41766 , H01L29/66431 , H01L29/66462 , H01L29/7786
摘要： A higher electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. According to example embodiments, the HEMT may include a channel supply layer on a channel layer, a source electrode and a drain electrode that are on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a source pad and a drain pad. The source pad and a drain pad electrically contact the source electrode and the drain electrode, respectively. At least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith.
摘要翻译：公开了一种较高电子迁移率晶体管（HEMT）及其制造方法。根据示例实施例，HEMT可以包括位于沟道层和沟道供应层中的至少一个上的沟道层，源电极和漏电极上的沟道供应层，源极和源极之间的栅电极漏电极，以及源极焊盘和漏极焊盘。源极焊盘和漏极焊盘分别与源电极和漏电极电接触。源极焊盘和漏极焊盘中的至少一个的至少一部分延伸到源电极和漏电极中的至少一个源极焊盘和漏极焊盘与其电接触的相应的一个。

9. 发明授权

US09461637B2 Method and apparatus for controlling a gate voltage in high electron mobility transistor 有权
标题翻译：用于控制高电子迁移率晶体管中的栅极电压的方法和装置
公开(公告)号：US09461637B2
公开(公告)日：2016-10-04
申请号：US14106991
申请日：2013-12-16
申请人： Samsung Electronics Co., Ltd.
发明人： Sun-kyu Hwang , Woo-chul Jeon , Joon-yong Kim , Ki-yeol Park , Young-hwan Park , Jai-kwang Shin , Jae-joon Oh , Jong-bong Ha
IPC分类号： H03K17/06 , H01L29/778 , H01L29/20 , G01N27/02 , G01N27/08
CPC分类号： H03K17/063 , G01N27/025 , G01N27/08 , H01L29/1066 , H01L29/2003 , H01L29/7787
摘要： According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.
摘要翻译：根据示例性实施例，用于控制施加到高电子迁移率晶体管（HEMT）的栅电极的栅极电压的方法可以包括测量HEMT的漏电极和源电极之间的电压，并且调节栅极的电平根据测量的电压施加到HEMT的栅电极的电压。如果漏电极和源电极之间的电压不同于设定值，则可以调节栅电极的电平。

10. 发明授权

US09299800B2 Methods of manufacturing high electron mobility transistors 有权
标题翻译：制造高电子迁移率晶体管的方法
公开(公告)号：US09299800B2
公开(公告)日：2016-03-29
申请号：US14687488
申请日：2015-04-15
申请人： Samsung Electronics Co., Ltd.
发明人： Hyuk-soon Choi , Jung-hee Lee , Jai-kwang Shin , Jae-joon Oh , Jong-bong Ha , Jong-seob Kim , In-jun Hwang , Ki-ha Hong , Ki-sik Im , Ki-won Kim , Dong-seok Kim
IPC分类号： H01L29/66 , H01L21/762 , H01L29/08 , H01L29/20 , H01L29/423 , H01L29/778 , H01L21/02 , H01L29/201 , H01L29/205 , H01L29/207
CPC分类号： H01L29/66462 , H01L21/0254 , H01L21/76237 , H01L29/0847 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/4236 , H01L29/7787
摘要： The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.
摘要翻译：所述方法可以包括在衬底上形成第一材料层，增加第一材料层的电阻，以及在第一材料层上形成彼此间隔开的源图案和漏极图案，带隙为源极和漏极图案大于第一材料层的带隙。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式