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1. 发明授权

US09076850B2 High electron mobility transistor 有权
标题翻译：高电子迁移率晶体管
公开(公告)号：US09076850B2
公开(公告)日：2015-07-07
申请号：US13953165
申请日：2013-07-29
申请人： Samsung Electronics Co., Ltd.
发明人： In-jun Hwang , Hyo-ji Choi , Jong-seob Kim , Jae-joon Oh
IPC分类号： H01L29/66 , H01L29/778 , H01L29/36 , H01L29/423 , H01L29/06 , H01L29/20
CPC分类号： H01L29/778 , H01L29/06 , H01L29/2003 , H01L29/36 , H01L29/42364 , H01L29/7787
摘要： According to example embodiments, a high electron mobility transistor includes: a channel layer including a 2-dimensional electron gas (2DEG); a contact layer on the channel layer; a channel supply layer on the contact layer; a gate electrode on a portion of the channel layer; and source and drain electrodes on at least one of the channel layer, the contact layer, and the channel supply layer. The contact layer is configured to form an ohmic contact on the channel layer. The contact layer is n-type doped and contains a Group III-V compound semiconductor. The source electrode and the drain electrode are spaced apart from opposite sides of the gate electrode.
摘要翻译：根据示例性实施例，高电子迁移率晶体管包括：包括二维电子气（2DEG）的沟道层; 沟道层上的接触层; 接触层上的沟道供应层; 沟道层的一部分上的栅电极; 以及在沟道层，接触层和沟道供应层中的至少一个上的源极和漏极。接触层被配置为在沟道层上形成欧姆接触。接触层为n型掺杂并含有III-V族化合物半导体。源电极和漏电极与栅电极的相对侧间隔开。

2. 发明授权

US08791515B2 Spin field effect logic devices 有权
标题翻译：旋转场效应逻辑器件
公开(公告)号：US08791515B2
公开(公告)日：2014-07-29
申请号：US13915272
申请日：2013-06-11
申请人： Samsung Electronics Co., Ltd.
发明人： Ki-ha Hong , Jong-seob Kim , Jai-Kwang Shin
IPC分类号： H01L29/66 , H01L29/82 , H01L29/94
CPC分类号： H01L29/66984 , B82Y25/00 , H01F1/401 , H01F10/1936 , H01F10/3254
摘要： Provided are spin field effect logic devices, the logic devices including: a gate electrode; a channel formed of a magnetic material above the gate electrode to selectively transmit spin-polarized electrons; a source on the channel; and a drain and an output electrode on the channel outputting electrons transmitted from the source. The gate electrode may control a magnetization state of the channel in order to selectively transmit the electrons injected from the source to the channel.
摘要翻译：提供的是自旋场效应逻辑器件，逻辑器件包括：栅电极; 由栅电极上方的磁性材料形成的沟道，以选择性地透射自旋极化电子; 频道上的来源; 以及沟道上的漏极和输出电极，输出从源极发射的电子。栅电极可以控制通道的磁化状态，以选择性地将从源引入的电子传输到通道。

3. 发明授权

US08772834B2 High electron mobility transistor and method of driving the same 有权
标题翻译：高电子迁移率晶体管及其驱动方法
公开(公告)号：US08772834B2
公开(公告)日：2014-07-08
申请号：US13868579
申请日：2013-04-23
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Jong-seob Kim , Ki-yeol Park , Young-hwan Park , Jae-joon Oh , Jong-bong Ha , Jai-kwang Shin
IPC分类号： H01L29/00 , H01L29/205 , H01L29/778 , H01L29/66
CPC分类号： H01L29/7781 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/66431 , H01L29/66462 , H01L29/778 , H01L29/7782 , H01L29/7786 , H03K3/012
摘要： According to example embodiments, a HEMT includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode spaced apart on the channel layer, a depletion-forming layer on the channel supply layer, and a plurality of gate electrodes on the depletion-forming layer between the source electrode and the drain electrode. The channel supply layer is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured to form a depletion region in the 2DEG. The plurality of gate electrodes include a first gate electrode and a second gate electrode spaced apart from each other.
摘要翻译：根据示例性实施例，HEMT包括沟道层，沟道层上的沟道供应层，在沟道层上隔开的源电极和漏电极，沟道供应层上的耗尽形成层，以及多个在源电极和漏电极之间的耗尽形成层上的栅电极。通道供给层被配置为在通道层中诱导二维电子气（2DEG）。耗尽形成层被配置为在2DEG中形成耗尽区。多个栅电极包括彼此间隔开的第一栅电极和第二栅电极。

4. 发明授权

US09608100B2 High electron mobility transistor and method of manufacturing the same 有权
公开(公告)号：US09608100B2
公开(公告)日：2017-03-28
申请号：US13714957
申请日：2012-12-14
申请人： Samsung Electronics Co., Ltd.
发明人： Hyuk-soon Choi , Jong-seob Kim , Jai-kwang Shin , Jae-joon Oh , Jong-bong Ha , In-jun Hwang
IPC分类号： H01L29/417 , H01L29/778 , H01L29/66 , H01L29/20
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/4175 , H01L29/66431 , H01L29/66462 , H01L29/7786
摘要： According to example embodiments, a high electron mobility transistor (HEMT) includes: stack including a buffer layer, a channel layer containing a two dimensional electron gas (2DEG) channel, and a channel supply layer sequentially stacked on each other, the stack defining a first hole and a second hole that are spaced apart from each other. A first electrode, a second electrode, and third electrode are spaced apart from each other along a first surface of the channel supply layer. A first pad is on the buffer layer and extends through the first hole of the stack to the first electrode. A second pad is on the buffer layer and extends through the second hole of the stack to the second electrode. A third pad is under the stack and electrically connected to the third electrode.

5. 发明授权

US09117890B2 High-electron mobility transistor and method of manufacturing the same 有权
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US09117890B2
公开(公告)日：2015-08-25
申请号：US13910417
申请日：2013-06-05
申请人： Samsung Electronics Co., Ltd.
发明人： Jong-seob Kim , Kyoung-yeon Kim , Joon-yong Kim , Jai-kwang Shin , Jae-joon Oh , Hyuk-soon Choi , Jong-bong Ha , Sun-kyu Hwang , In-jun Hwang
IPC分类号： H01L29/66 , H01L29/778 , H01L29/10 , H01L29/417 , H01L29/20
CPC分类号： H01L29/778 , H01L29/1066 , H01L29/2003 , H01L29/41766 , H01L29/66431 , H01L29/66462 , H01L29/7786
摘要： According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.
摘要翻译：根据示例性实施例，HEMT包括在沟道层上的沟道供应层，沟道供应层上的p型半导体结构，p型半导体结构上的栅电极以及与两侧隔开的源极和漏极的栅电极。通道供应层可以具有比沟道层更高的能量带隙。 p型半导体结构可以具有与沟道供给层不同的能量带隙。 p型半导体结构可以包括在沟道供应层上的空穴注入层（HIL），并且被配置为在导通状态下将空穴注入至少一个沟道层和沟道电源。 p型半导体结构可以在HIL的一部分上包括耗尽形成层。耗尽形成层可以具有不同于HIL的掺杂剂浓度的掺杂剂浓度。

6. 发明授权

US09570597B2 High electron mobility transistor 有权
标题翻译：高电子迁移率晶体管
公开(公告)号：US09570597B2
公开(公告)日：2017-02-14
申请号：US13732746
申请日：2013-01-02
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Jong-seob Kim , Ki-yeol Park , Young-hwan Park , Jai-kwang Shin , Jae-joon Oh , Jong-bong Ha , Sun-kyu Hwang
IPC分类号： H01L29/78 , H01L29/10 , H01L29/20 , H01L29/778 , H01L29/423
CPC分类号： H01L29/778 , H01L29/1066 , H01L29/2003 , H01L29/4236 , H01L29/42376 , H01L29/7786
摘要： According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.
摘要翻译：根据示例性实施例，高电子迁移率晶体管（HEMT）包括在通道层中的二维电子气体（2DEG），沟道供应层侧面的源电极和漏电极在沟道供给层上并与源电极接触的耗尽型层，耗尽型层上的栅极绝缘层和栅极绝缘层上的栅电极。耗尽形成层在2DEG中形成耗尽区。

7. 发明授权

US09245738B2 High electron mobility transistor and method of manufacturing the same 有权
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US09245738B2
公开(公告)日：2016-01-26
申请号：US14091822
申请日：2013-11-27
申请人： Samsung Electronics Co., Ltd.
发明人： Woo-chul Jeon , Jong-seob Kim , Ki-yeol Park , Young-hwan Park , Jai-kwang Shin , Jae-joon Oh , Hyuk-soon Choi , In-jun Hwang
IPC分类号： H01L21/02 , H01L29/66 , H01L29/778 , H01L29/861 , H01L29/06 , H01L29/10 , H01L29/20
CPC分类号： H01L21/02109 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/66462 , H01L29/7786 , H01L29/8613
摘要： According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer; a channel supply layer on the channel layer; a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer; a gate electrode on a part of the channel supply layer between the source electrode and the drain electrode; a first depletion-forming layer between the gate electrode and the channel supply layer; and a at least one second depletion-forming layer on the channel supply layer between the gate electrode and the drain electrode. The at least one second depletion-forming layer is electrically connected to the source electrode.
摘要翻译：根据示例性实施例，高电子迁移率晶体管（HEMT）包括沟道层; 通道层上的通道供应层; 在所述沟道层和所述沟道供给层之一上彼此隔开的源电极和漏电极; 源电极和漏电极之间的沟道供给层的一部分上的栅电极; 在栅电极和沟道供应层之间的第一耗尽层; 以及在栅电极和漏电极之间的沟道供应层上的至少一个第二耗尽层。所述至少一个第二耗尽形成层电连接到所述源电极。

8. 发明授权

US09299800B2 Methods of manufacturing high electron mobility transistors 有权
标题翻译：制造高电子迁移率晶体管的方法
公开(公告)号：US09299800B2
公开(公告)日：2016-03-29
申请号：US14687488
申请日：2015-04-15
申请人： Samsung Electronics Co., Ltd.
发明人： Hyuk-soon Choi , Jung-hee Lee , Jai-kwang Shin , Jae-joon Oh , Jong-bong Ha , Jong-seob Kim , In-jun Hwang , Ki-ha Hong , Ki-sik Im , Ki-won Kim , Dong-seok Kim
IPC分类号： H01L29/66 , H01L21/762 , H01L29/08 , H01L29/20 , H01L29/423 , H01L29/778 , H01L21/02 , H01L29/201 , H01L29/205 , H01L29/207
CPC分类号： H01L29/66462 , H01L21/0254 , H01L21/76237 , H01L29/0847 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/4236 , H01L29/7787
摘要： The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.
摘要翻译：所述方法可以包括在衬底上形成第一材料层，增加第一材料层的电阻，以及在第一材料层上形成彼此间隔开的源图案和漏极图案，带隙为源极和漏极图案大于第一材料层的带隙。

9. 发明授权

US09202904B2 Power device chip and method of manufacturing the power device chip 有权
标题翻译：功率器件芯片和制造功率器件芯片的方法
公开(公告)号：US09202904B2
公开(公告)日：2015-12-01
申请号：US14224769
申请日：2014-03-25
申请人： Samsung Electronics Co., Ltd.
发明人： In-jun Hwang , Jong-seob Kim , Jae-joon Oh
IPC分类号： H01L29/66 , H01L29/778 , H01L29/16 , H01L29/40
CPC分类号： H01L29/778 , H01L29/1608 , H01L29/402 , H01L29/7787
摘要： According to example embodiments, a power device chip includes a plurality of unit power devices classified into a plurality of sectors, a first pad and a second pad. At least one of the first and second pads is divided into a number of pad parts equal to a number of the plurality of sectors. The first pad is connected to first electrodes of the plurality of unit power devices, and the second pad is connected to second electrodes of the plurality of unit power devices. The unit power devices may be diodes. The power device chip may further include third electrodes in the plurality of unit power devices, and a third pad may be connected to the third electrodes. In this case, the unit power devices may be high electron mobility transistors (HEMTs). Pad parts connected to defective sectors may be excluded from bonding.
摘要翻译：根据示例性实施例，功率器件芯片包括分为多个扇区的多个单位功率器件，第一焊盘和第二焊盘。第一和第二焊盘中的至少一个被分成等于多个扇区的数量的多个焊盘部分。第一焊盘连接到多个单元功率器件的第一电极，第二焊盘连接到多个单元功率器件的第二电极。单元功率器件可以是二极管。功率器件芯片还可以包括多个单位功率器件中的第三电极，并且第三焊盘可以连接到第三电极。在这种情况下，单位功率器件可以是高电子迁移率晶体管（HEMT）。连接到缺陷扇区的焊盘部件可能被排除在接合之外。

10. 发明申请

US20150221745A1 HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS OF MANUFACTURING THE SAME 审中-公开
标题翻译：高电子移动晶体管及其制造方法
公开(公告)号：US20150221745A1
公开(公告)日：2015-08-06
申请号：US14686436
申请日：2015-04-14
申请人： Samsung Electronics Co., Ltd.
发明人： In-jun HWANG , Hyuk-soon Choi , Jae-joon Oh , Jong-bong Ha , Jong-seob Kim , Ki-ha Hong , Jai-kwang Shin
IPC分类号： H01L29/66 , H01L29/20
CPC分类号： H01L29/66462 , H01L29/1066 , H01L29/2003 , H01L29/7787
摘要： High electron mobility transistors (HEMTs) including a substrate and a HEMT stack on the substrate, the HEMT stack including a compound semiconductor layer that includes a 2-dimensional electron gas (2DEG), an upper compound semiconductor layer that has a polarization index higher than a polarization index of the compound semiconductor layer, and a source electrode, a drain electrode, and a gate that are disposed on the upper compound semiconductor layer. The substrate may be a nitride substrate that has a dielectric constant and a thermal conductivity higher than a dielectric constant and a thermal conductivity of a silicon substrate. The substrate may include an insulating layer that has a dielectric constant and a thermal conductivity higher than a dielectric constant and a thermal conductivity of the silicon substrate, a metal layer that is deposited on the insulating layer, and a plate that is attached to the metal layer.
摘要翻译：包括衬底和衬底上的HEMT堆叠的高电子迁移率晶体管（HEMT），所述HEMT堆叠包括包含二维电子气（2DEG）的化合物半导体层，具有高于化合物半导体层的极化指数，以及设置在上部化合物半导体层上的源电极，漏电极和栅极。衬底可以是氮化物衬底，其具有高于介电常数和硅衬底的热导率的介电常数和导热系数。衬底可以包括绝缘层，该绝缘层的介电常数和热导率高于介电常数和硅衬底的热导率，沉积在绝缘层上的金属层和附着到金属的板层。

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