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1. 发明授权

US11133078B2 Semiconductor device 有权
公开(公告)号：US11133078B2
公开(公告)日：2021-09-28
申请号：US16780027
申请日：2020-02-03
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masayuki Sakakura , Yuugo Goto , Hiroyuki Miyake , Daisuke Kurosaki
IPC分类号： G11C19/28 , G11C19/18 , H01L27/12 , H01L27/02
摘要： A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.

2. 发明授权

US10693014B2 Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module 有权
公开(公告)号：US10693014B2
公开(公告)日：2020-06-23
申请号：US15421657
申请日：2017-02-01
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Junichi Koezuka , Masami Jintyou , Daisuke Kurosaki
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66 , H01L29/51 , H01L27/32 , H01L29/24 , H01L29/49
摘要： A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device using a transistor including an oxide semiconductor. One embodiment of a semiconductor device including a transistor includes a gate electrode, first and second insulating films over the gate electrode, an oxide semiconductor film over the second insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. A third insulating film is provided over the transistor and a fourth insulating film is provided over the third insulating film. The third insulating film includes oxygen. The fourth insulating film includes nitrogen. The amount of oxygen released from the third insulating film is 1×1019/cm3 or more by thermal desorption spectroscopy, which is estimated as oxygen molecules. The amount of oxygen molecules released from the fourth insulating film is less than 1×1019/cm3.

3. 发明授权

US10580508B2 Semiconductor device 有权
公开(公告)号：US10580508B2
公开(公告)日：2020-03-03
申请号：US16547976
申请日：2019-08-22
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masayuki Sakakura , Yuugo Goto , Hiroyuki Miyake , Daisuke Kurosaki
IPC分类号： G11C19/18 , H01L27/12 , H01L27/02
摘要： A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.

4. 发明授权

US10438815B2 Manufacturing method of semiconductor device comprising oxide semiconductor film 有权
公开(公告)号：US10438815B2
公开(公告)日：2019-10-08
申请号：US15893748
申请日：2018-02-12
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junichi Koezuka , Daisuke Kurosaki , Yukinori Shima , Takuya Handa
IPC分类号： H01L21/477 , H01L21/02 , H01L29/49 , H01L29/66 , H01L29/786
摘要： In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The semiconductor device is manufactured by a method including first to fourth steps. The first step includes a step of forming an oxide semiconductor film, the second step includes a step of forming an oxide insulating film over the oxide semiconductor film, the third step includes a step of forming a protective film over the oxide insulating film, and the fourth step includes a step of adding oxygen to the oxide insulating film through the protective film. In the first step, the oxide semiconductor film is formed under a condition in which an oxygen vacancy is formed. The oxygen from the oxide insulating film fills the oxygen vacancy after the fourth step.

5. 发明授权

US10249768B2 Semiconductor device 有权
公开(公告)号：US10249768B2
公开(公告)日：2019-04-02
申请号：US15935324
申请日：2018-03-26
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Junichi Koezuka , Masami Jintyou , Yukinori Shima , Daisuke Kurosaki , Masataka Nakada , Shunpei Yamazaki
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12
摘要： The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

6. 发明授权

US09768315B2 Semiconductor device and display device having the same 有权
公开(公告)号：US09768315B2
公开(公告)日：2017-09-19
申请号：US14681383
申请日：2015-04-08
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junichi Koezuka , Masami Jintyou , Daisuke Kurosaki
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/66969 , H01L29/78606 , H01L29/78648
摘要： A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device using a transistor including an oxide semiconductor. A semiconductor device includes a transistor which includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, and a drain electrode electrically connected to the oxide semiconductor film. A second insulating film is provided over the transistor, and a protective film is provided over the second insulating film. The second insulating film includes oxygen. The protective film includes at least one of metal elements used for the oxide semiconductor film.

7. 发明授权

US09640669B2 Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module 有权
公开(公告)号：US09640669B2
公开(公告)日：2017-05-02
申请号：US14640379
申请日：2015-03-06
申请人： Semiconductor Energy Laboratory Co., LTD.
发明人： Shunpei Yamazaki , Junichi Koezuka , Yukinori Shima , Masami Jintyou , Daisuke Kurosaki , Masataka Nakada
IPC分类号： H01L21/469 , H01L29/786 , H01L21/34 , H01L21/36 , H01L29/24 , H01L29/04 , H01L29/66
CPC分类号： H01L27/1225 , H01L29/045 , H01L29/24 , H01L29/36 , H01L29/66969 , H01L29/78606 , H01L29/78621 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.

8. 发明授权

US09412876B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09412876B2
公开(公告)日：2016-08-09
申请号：US14608224
申请日：2015-01-29
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Junichi Koezuka , Masami Jintyou , Yukinori Shima , Daisuke Kurosaki , Masataka Nakada , Shunpei Yamazaki
IPC分类号： H01L29/10 , H01L29/04 , H01L29/76 , H01L29/15 , H01L29/786 , H01L27/12
CPC分类号： H01L29/78693 , H01L27/1225 , H01L27/1251 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.
摘要翻译：该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。含有杂质元素的氧化物半导体膜的区域用作低电阻区域。此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。此外，设置在驱动器电路部分中的第一晶体管可以包括堆叠第一膜和第二膜的氧化物半导体膜，并且设置在像素部分中的第二晶体管可以包括与第一膜不同的氧化物半导体膜以金属元素的原子比计。

9. 发明授权

US11532650B2 Display device, method for manufacturing the same, and electronic device 有权
公开(公告)号：US11532650B2
公开(公告)日：2022-12-20
申请号：US17030560
申请日：2020-09-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Kenichi Okazaki , Daisuke Kurosaki , Yasutaka Nakazawa
IPC分类号： H01L21/00 , H01L27/00 , H01L29/00 , G02F1/1362 , H01L27/12 , H01L21/02 , G02F1/1368 , H01L29/786
摘要： A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided. A display device includes a transistor and a capacitor. The transistor includes a first insulating layer, a first semiconductor layer in contact with the first insulating layer, a second insulating layer in contact with the first semiconductor layer, and a first conductive layer electrically connected to the first semiconductor layer via an opening portion provided in the second insulating layer. The capacitor includes a second conductive layer in contact with the first insulating layer, the second insulating layer in contact with the second conductive layer, and the first conductive layer in contact with the second insulating layer. The second conductive layer includes a composition similar to that of the first semiconductor layer. The first conductive layer and the second conductive layer are configured to transmit visible light.

10. 发明授权

US11450691B2 Semiconductor device and display device including the semiconductor device 有权
公开(公告)号：US11450691B2
公开(公告)日：2022-09-20
申请号：US16671223
申请日：2019-11-01
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Kenichi Okazaki , Daisuke Kurosaki , Yasutaka Nakazawa
IPC分类号： H01L27/12 , H01L29/786
摘要： To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. A semiconductor device includes an oxide semiconductor film, a gate electrode, an insulating film over the gate electrode, the oxide semiconductor film over the insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film, include the same element. The first oxide semiconductor film includes a region having lower crystallinity than the second oxide semiconductor film.

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