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    • 5. 发明授权
    • Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
    • 通过在编程级别分配间隔内采样来估计存储单元读取阈值
    • US08482978B1
    • 2013-07-09
    • US13170202
    • 2011-06-28
    • Uri PerlmutterShai WinterEyal GurgiOren GolovMicha Anholt
    • Uri PerlmutterShai WinterEyal GurgiOren GolovMicha Anholt
    • G11C11/34
    • G11C11/5642G11C16/26G11C27/005G11C2211/5634
    • A method for data storage includes storing data in a group of analog memory cells by writing into the memory cells in the group respective storage values, which program each of the analog memory cells to a respective programming state selected from a predefined set of programming states, including at least first and second programming states, which are applied respectively to first and second subsets of the memory cells, whereby the storage values held in the memory cells in the first and second subsets are distributed in accordance with respective first and second distributions. A first median of the first distribution is estimated, and a read threshold, which differentiates between the first and second programming states, is calculated based on the estimated first median. The data is retrieved from the analog memory cells in the group by reading the storage values using the calculated read threshold.
    • 一种用于数据存储的方法包括:通过将各组存储单元中的每个模拟存储器单元编程为从预定义的编程状态集合中选择的相应编程状态,将组中各存储单元写入存储单元中,将数据存储在一组模拟存储单元中, 包括至少第一和第二编程状态,其分别应用于存储器单元的第一和第二子集,由此保持在第一和第二子集中的存储单元中的存储值根据相应的第一和第二分布进行分配。 估计第一分布的第一中值,并且基于估计的第一中值来计算区分第一和第二编程状态的读取阈值。 通过使用计算的读取阈值读取存储值,从组中的模拟存储器单元检索数据。
    • 9. 发明申请
    • Programming Orders for Reducing Distortion Based on Neighboring Rows
    • 基于相邻行减少失真的编程订单
    • US20120163079A1
    • 2012-06-28
    • US13412731
    • 2012-03-06
    • Ofir ShalviEyal GurgiUri PerlmutterOren Golov
    • Ofir ShalviEyal GurgiUri PerlmutterOren Golov
    • G11C16/10
    • G11C16/3418G11C11/56G11C16/04G11C27/005G11C2211/5641
    • A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order.
    • 一种用于数据存储的方法包括预先定义以行排列的多个模拟存储器单元的编程顺序。 该顺序指定对于在第一和第二侧具有相邻行的给定行,只有当至少一个侧面上的相邻行中的存储器单元处于擦除状态时,给定行中的存储器单元被编程,并且该 给定行中的存储器单元被编程为假设最高编程电平,其对应于单元的编程电平中的最大模拟值,只有在编程给定行中的所有存储器单元之后才采用除 最高水平。 根据预定义的顺序对存储器单元进行编程,将数据存储在存储器单元中。