专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09105824B2 High reflective board or substrate for LEDs 有权
标题翻译：高反射板或LED基板
公开(公告)号：US09105824B2
公开(公告)日：2015-08-11
申请号：US13370696
申请日：2012-02-10
申请人： Sten Heikman , Zhimin Jamie Yao , James Ibbetson , Fan Zhang
发明人： Sten Heikman , Zhimin Jamie Yao , James Ibbetson , Fan Zhang
IPC分类号： H01L33/46 , H01L33/60 , H01L33/54 , H01L33/62
CPC分类号： H01L33/60 , H01L33/54 , H01L33/62 , H01L2224/73265 , H01L2224/48091 , H01L2924/00014
摘要： Light emitting devices and methods are disclosed that provide improved light output. The devices have an LED mounted to a substrate, board or submount characterized by improved reflectivity, which reduces the absorption of LED light. This increases the amount of light that can emit from the LED device. The LED devices also exhibit improved emission characteristics by having a reflective coating on the submount that is substantially non-yellowing. One embodiment of a light emitting device according to the present invention comprises a submount having a circuit layer. A reflective coating is included between at least some of the elements of the circuit layer. A light emitting diode mounted to the circuit layer, the reflective coating being reflective to the light emitted by the light emitting diode. In some embodiments, the reflective coating comprises a carrier with scattering particles having a different index of refraction than said carrier material.
摘要翻译：公开了提供改进的光输出的发光器件和方法。这些装置具有安装到基板，板或基座的LED，其特征在于改进的反射率，这降低了LED光的吸收。这增加了可从LED器件发射的光量。 LED器件还通过在基座上具有基本不变黄的反射涂层来显示出改进的发射特性。根据本发明的发光器件的一个实施例包括具有电路层的基座。反射涂层包括在电路层的至少一些元件之间。安装到电路层的发光二极管，反射涂层对由发光二极管发出的光反射。在一些实施例中，反射涂层包括具有与所述载体材料不同的折射率的散射颗粒的载体。

2. 发明申请

US20110266560A1 WHITE-EMITTING LED CHIPS AND METHOD FOR MAKING SAME 有权
标题翻译：白色发光LED灯及其制作方法
公开(公告)号：US20110266560A1
公开(公告)日：2011-11-03
申请号：US12771938
申请日：2010-04-30
申请人： Zhimin Jamie Yao , James Ibbetson
发明人： Zhimin Jamie Yao , James Ibbetson
IPC分类号： H01L33/48 , H01L33/00
CPC分类号： H01L33/50 , H01L33/0079 , H01L33/12 , H01L33/22 , H01L33/486 , H01L33/505 , H01L2224/16
摘要： Methods and devices for light emitting diode (LED) chips are provided. In one embodiment of a method, a pre-formed capping wafer is provided, with the capping wafer comprising a conversion material. A wire-bond free LED wafer is fabricated comprising a plurality of LEDs. The capping wafer is bonded to the LED wafer using an adhesive. The LED chips are later singulated upon completion of all final fabrication steps. The capping wafer provides a robust mechanical support for the LED chips during fabrication, which improves the strength of the chips during fabrication. Additionally, the capping wafer may comprise an integrated conversion material, which simplifies the fabrication process. In one possible embodiment for an LED chip wafer, a submount wafer is provided, along with a plurality of LEDs flip-chip mounted on the submount wafer. Additionally, a capping wafer is bonded to the LEDs using an adhesive, and the capping wafer comprises a conversion material. At least some of the light emitted from the LEDs passes through the capping wafer where at least some of the light is converted by the conversion material.
摘要翻译：提供了用于发光二极管（LED）芯片的方法和装置。在一种方法的一个实施例中，提供预成形的封盖晶片，封盖晶片包括转换材料。制造包括多个LED的无引线接合LED晶片。封盖晶片使用粘合剂结合到LED晶片。在完成所有最终制造步骤后，LED芯片随后被分割。封装晶片在制造期间为LED芯片提供了坚固的机械支撑，这在制造过程中提高了芯片的强度。另外，封盖晶片可以包括集成转换材料，这简化了制造工艺。在用于LED芯片晶片的一个可能的实施例中，提供了一个底座晶片以及安装在底座晶片上的多个LED倒装芯片。此外，使用粘合剂将封盖晶片结合到LED，并且封盖晶片包括转换材料。从LED发射的至少一些光通过封盖晶片，其中至少一些光被转换材料转化。

3. 发明申请

US20090283787A1 SEMICONDUCTOR LIGHT EMITTING DIODES HAVING REFLECTIVE STRUCTURES AND METHODS OF FABRICATING SAME 有权
标题翻译：具有反射结构的半导体发光二极管及其制造方法
公开(公告)号：US20090283787A1
公开(公告)日：2009-11-19
申请号：US12463709
申请日：2009-05-11
申请人： Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
发明人： Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/42 , H01L33/46 , H01L33/486 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode contact and/or the cathode contact may further provide a hybrid reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. Related fabrication methods are also described.
摘要翻译：发光二极管包括具有第一和第二相对面的二极管区域，其中包括n型层和p型层，与p型层欧姆接触并在第一面上延伸的阳极接触，以及阴极接触该欧姆接触n型层并且还在第一面上延伸。阳极接触件和/或阴极接触件还可以在第一面上提供混合反射结构，其被配置为基本上将从第一面部露出的所有光反射回第一面。还描述了相关的制造方法。

4. 发明授权

US08329482B2 White-emitting LED chips and method for making same 有权
标题翻译：白光LED芯片及其制造方法
公开(公告)号：US08329482B2
公开(公告)日：2012-12-11
申请号：US12771938
申请日：2010-04-30
申请人： Zhimin Jamie Yao , James Ibbetson
发明人： Zhimin Jamie Yao , James Ibbetson
IPC分类号： H01L21/00
CPC分类号： H01L33/50 , H01L33/0079 , H01L33/12 , H01L33/22 , H01L33/486 , H01L33/505 , H01L2224/16
摘要： Methods and devices for light emitting diode (LED) chips are provided. In one embodiment of a method, a pre-formed capping wafer is provided, with the capping wafer comprising a conversion material. A wire-bond free LED wafer is fabricated comprising a plurality of LEDs. The capping wafer is bonded to the LED wafer using an adhesive. The LED chips are later singulated upon completion of all final fabrication steps. The capping wafer provides a robust mechanical support for the LED chips during fabrication, which improves the strength of the chips during fabrication. Additionally, the capping wafer may comprise an integrated conversion material, which simplifies the fabrication process. In one possible embodiment for an LED chip wafer, a submount wafer is provided, along with a plurality of LEDs flip-chip mounted on the submount wafer. Additionally, a capping wafer is bonded to the LEDs using an adhesive, and the capping wafer comprises a conversion material. At least some of the light emitted from the LEDs passes through the capping wafer where at least some of the light is converted by the conversion material.
摘要翻译：提供了用于发光二极管（LED）芯片的方法和装置。在一种方法的一个实施例中，提供预成形的封盖晶片，封盖晶片包括转换材料。制造包括多个LED的无引线接合LED晶片。封盖晶片使用粘合剂结合到LED晶片。在完成所有最终制造步骤后，LED芯片随后被分割。封装晶片在制造期间为LED芯片提供了坚固的机械支撑，这在制造过程中提高了芯片的强度。另外，封盖晶片可以包括集成转换材料，这简化了制造工艺。在用于LED芯片晶片的一个可能的实施例中，提供了一个底座晶片以及安装在底座晶片上的多个LED倒装芯片。此外，使用粘合剂将封盖晶片结合到LED，并且封盖晶片包括转换材料。从LED发射的至少一些光通过封盖晶片，其中至少一些光被转换材料转化。

5. 发明授权

US08643039B2 Lateral semiconductor Light Emitting Diodes having large area contacts 有权
标题翻译：侧向半导体发光二极管具有大面积接触
公开(公告)号：US08643039B2
公开(公告)日：2014-02-04
申请号：US13023788
申请日：2011-02-09
申请人： Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
发明人： Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
IPC分类号： H01L33/00 , H01L27/15 , H01L31/12
CPC分类号： H01L33/405 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/42 , H01L33/46 , H01L33/486 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
摘要翻译：发光二极管包括具有第一和第二相对面的二极管区域，其中包括n型层和p型层，与p型层欧姆接触并在第一面上延伸的阳极接触，以及阴极接触该欧姆接触n型层并且还在第一面上延伸。阳极和阴极接触件在第一面上延伸以共同覆盖基本上所有的第一面。可以在触点之间提供小的间隙。

6. 发明授权

US08368100B2 Semiconductor light emitting diodes having reflective structures and methods of fabricating same 有权
标题翻译：具有反射结构的半导体发光二极管及其制造方法
公开(公告)号：US08368100B2
公开(公告)日：2013-02-05
申请号：US12463709
申请日：2009-05-11
申请人： Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
发明人： Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
IPC分类号： H01L33/00 , H01L27/15 , H01L31/12
CPC分类号： H01L33/405 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/42 , H01L33/46 , H01L33/486 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode contact and/or the cathode contact may further provide a hybrid reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. Related fabrication methods are also described.
摘要翻译：发光二极管包括具有第一和第二相对面的二极管区域，其中包括n型层和p型层，与p型层欧姆接触并在第一面上延伸的阳极接触，以及阴极接触该欧姆接触n型层并且还在第一面上延伸。阳极接触件和/或阴极接触件还可以在第一面上提供混合反射结构，该混合反射结构被构造成基本上将从第一面反射出来的所有光反射回第一面。还描述了相关的制造方法。

7. 发明申请

US20110127568A1 LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS 有权
标题翻译：具有大面积接触的横向半导体发光二极管
公开(公告)号：US20110127568A1
公开(公告)日：2011-06-02
申请号：US13023788
申请日：2011-02-09
申请人： MATTHEW DONOFRIO , James Ibbetson , Zhimin Jamie Yao
发明人： MATTHEW DONOFRIO , James Ibbetson , Zhimin Jamie Yao
IPC分类号： H01L33/36
CPC分类号： H01L33/405 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/42 , H01L33/46 , H01L33/486 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
摘要翻译：发光二极管包括具有第一和第二相对面的二极管区域，其中包括n型层和p型层，与p型层欧姆接触并在第一面上延伸的阳极接触，以及阴极接触该欧姆接触n型层并且还在第一面上延伸。阳极和阴极接触件在第一面上延伸以共同覆盖基本上所有的第一面。可以在触点之间提供小的间隙。

8. 发明授权

US09391247B2 High power LEDs with non-polymer material lenses and methods of making the same 有权
标题翻译：具有非聚合物材料透镜的大功率LED及其制造方法
公开(公告)号：US09391247B2
公开(公告)日：2016-07-12
申请号：US12970789
申请日：2010-12-16
申请人： Zhimin Jamie Yao
发明人： Zhimin Jamie Yao
IPC分类号： H01L29/18 , H01L33/58 , H01L27/15 , H01L33/54
CPC分类号： H01L33/58 , H01L27/156 , H01L33/54 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： LED chips and packages are disclosed having lenses made of materials that resist degradation at higher operation temperatures and humidity, and methods of fabricating the same. The lenses can be made of certain materials that can withstand high temperatures and high humidity, with the lenses mounted to the LED prior to certain critical metallization steps. This helps avoid damage to the metalized part that might occur as a result of the high mounting or bonding temperature for the lens. One embodiment of an LED chip comprises a flip-chip LED and a lens mounted to the topmost surface of the flip-chip LED. Lenses can be bonded to LEDs at the wafer level or at the chip level. The lens comprises a non-polymer material and the LED chip is characterized as having substantially no polymer materials in contact with the LED chip.
摘要翻译：公开了具有在更高的操作温度和湿度下可降解的材料制成的透镜的LED芯片和封装及其制造方法。透镜可以由能够承受高温和高湿度的某些材料制成，透镜在某些关键的金属化步骤之前安装到LED上。这有助于避免由于透镜的高安装或粘合温度而可能发生的金属化部件的损坏。 LED芯片的一个实施例包括倒装芯片LED和安装到倒装芯片LED的最上表面的透镜。透镜可以在晶片级或芯片级连接到LED。透镜包括非聚合物材料，并且LED芯片的特征在于基本上没有与LED芯片接触的聚合物材料。

9. 发明授权

US06803534B1 Membrane for micro-electro-mechanical switch, and methods of making and using it 有权
标题翻译：微机电开关薄膜及其制造和使用方法
公开(公告)号：US06803534B1
公开(公告)日：2004-10-12
申请号：US09866205
申请日：2001-05-25
申请人： Shea Chen , Brandon W. Pillans , John C. Ehmke , Zhimin Jamie Yao
发明人： Shea Chen , Brandon W. Pillans , John C. Ehmke , Zhimin Jamie Yao
IPC分类号： B81B300
CPC分类号： B81B3/0008 , B81B2201/016 , H01G5/16 , H01H1/0036 , H01H59/0009 , H01H2001/0084
摘要： A micro-electro-mechanical (MEMS) switch (10, 110) has an electrode (22, 122) covered by a dielectric layer (23, 123), and has a flexible conductive membrane (31, 131) which moves between positions spaced from and engaging the dielectric layer. At least one of the membrane and dielectric layer has a textured surface (138) that engages the other thereof in the actuated position. The textured surface reduces the area of physical contact through which electric charge from the membrane can tunnel into and become trapped within the dielectric layer. This reduces the amount of trapped charge that could act to latch the membrane in its actuated position, which in turn effects a significant increase in the operational lifetime of the switch.
摘要翻译：微机电开关（10,110,120）被称为MEMS，并且包括具有两个间隔开的导电柱（17,18）的基部（13,14,17-18）。导电部分（22 ）被提供在柱之间并被介电层（23）覆盖。膜（31,131,231）在柱之间延伸并且具有间隔开的膨胀部分（41-42,141-142,241-242），其有助于纵向膨胀膜在其中心部分分别与电介质层间隔开并与其接合的位置之间弯曲。一种制造开关的方法包括：提供具有对应于膨胀部分的槽或脊的顶表面的间隔材料（76,171,177,178），将膜沉积在间隔物的顶表面上，然后移除间隔物材料。

10. 发明申请

US20120256200A1 HIGH EFFICIENCY LEDS 有权
标题翻译：高效LED
公开(公告)号：US20120256200A1
公开(公告)日：2012-10-11
申请号：US13250289
申请日：2011-09-30
申请人： Zhimin Jamie Yao
发明人： Zhimin Jamie Yao
IPC分类号： H01L33/08 , H01L33/48
CPC分类号： H01L33/62 , H01L27/156 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/405 , H01L2224/32014 , H01L2224/32225 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4918 , H01L2224/73265 , H01L2924/01079 , H01L2924/01087 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device and method of fabricating the same is disclosed that comprises at least one light emitter comprising an active region which emits light. The device further comprising a submount arranged such that the at least one light emitter is mounted to the submount such that the active region is angled in relation to the submount.
摘要翻译：公开了一种发光器件及其制造方法，其包括至少一个光发射器，其包括发射光的有源区。该装置进一步包括一个底架，其布置成使得至少一个光发射器安装到底座，使得有源区域相对于底座成一角度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式