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1. 发明授权

US08751192B2 Methods and systems for assessing vehicle transmissions 有权
标题翻译：评估车辆变速器的方法和系统
公开(公告)号：US08751192B2
公开(公告)日：2014-06-10
申请号：US12862377
申请日：2010-08-24
申请人： Steven E. Schulz , Bon Ho Bae , Silva Hiti , Min Dai , Harry J. Bauer , Samuel J. Harbin
发明人： Steven E. Schulz , Bon Ho Bae , Silva Hiti , Min Dai , Harry J. Bauer , Samuel J. Harbin
IPC分类号： G01M17/00 , F16H61/12 , G01M13/02 , G01M17/007 , F16H61/00
CPC分类号： F16H61/12 , B60Y2304/09 , F16H2061/0068 , F16H2061/1212 , F16H2061/1284 , G01M13/02 , G01M17/007
摘要： Methods and systems are provided for assessing a vehicle transmission having a resolver. A memory is configured to store preliminary data pertaining to an error of the resolver. A processor is coupled to the memory, and is configured to determine a harmonic characteristic of the preliminary data, and to assess the vehicle transmission using the harmonic characteristic.
摘要翻译：提供了用于评估具有旋转变压器的车辆传动装置的方法和系统。存储器被配置为存储与解析器的错误有关的初步数据。处理器耦合到存储器，并且被配置为确定初步数据的谐波特性，并且使用谐波特性来评估车辆传输。

2. 发明授权

US08294413B2 Induction motor control systems and methods 有权
标题翻译：感应电动机控制系统及方法
公开(公告)号：US08294413B2
公开(公告)日：2012-10-23
申请号：US12652448
申请日：2010-01-05
申请人： Min Dai , Bon Ho Bae , Leah Dunbar
发明人： Min Dai , Bon Ho Bae , Leah Dunbar
IPC分类号： H02P23/00 , H02P27/00
CPC分类号： H02P21/06 , H02P21/141 , H02P2207/01
摘要： A control system is provided for an inverter assembly associated with an induction motor. The system includes a current determination module configured to generate q- and d-axis current commands based on a torque command. The current determination module is further configured to generate the q-axis current command based on an observed flux linkage and a flux linkage command. The system further includes a motor current control module coupled to the current determination module and configured to generate q- and d-axis voltage commands based on the q- and d-axis current commands generated by the current determination module and a PWM modulator coupled to the motor current control module configured to generate duty cycle signals for operating the inverter assembly based on the q- and d-axis voltage commands generated by the motor current control module.
摘要翻译：为与感应电动机相关联的逆变器组件提供控制系统。该系统包括电流确定模块，其配置为基于转矩指令产生q轴和d轴电流指令。当前确定模块还被配置为基于观察到的磁链和磁链指令来生成q轴电流命令。该系统还包括电动机电流控制模块，该电动机电流控制模块耦合到电流确定模块并被配置为基于由电流确定模块产生的q轴和d轴电流指令产生q轴和d轴电压指令，以及PWM调制器电动机电流控制模块被配置为基于由电动机电流控制模块产生的q轴和d轴电压指令产生用于操作逆变器组件的占空比信号。

3. 发明授权

US09478173B2 Adaptive color correction for display with backlight modulation 有权
标题翻译：用于背光调制显示的自适应色彩校正
公开(公告)号：US09478173B2
公开(公告)日：2016-10-25
申请号：US13219416
申请日：2011-08-26
申请人： Reza Safaee-Rad , Min Dai , Milivoje Aleksic
发明人： Reza Safaee-Rad , Min Dai , Milivoje Aleksic
IPC分类号： G09G3/34 , G09G3/20 , H04N9/69
CPC分类号： G09G3/3406 , G09G3/2003 , G09G2320/0209 , G09G2320/0242 , G09G2320/0271 , G09G2320/0276 , G09G2320/0626 , G09G2320/066 , G09G2320/0666 , G09G2320/0693 , G09G2360/16 , H04N9/69
摘要： The techniques of this disclosure are applicable to backlight display devices. For such devices, the backlight may have different backlight intensity settings in order to promote power conservation. The techniques of this disclosure may apply different adjustments to the display, depending on the backlight intensity setting. In one example, different color correction matrices may be applied for different backlight settings in order to achieve desirable adjustments in the device at the different backlight settings. The adjustments described herein may address chrominance shifts due to different backlight settings as well as cross-talk between color channels. The techniques may also be applicable to organic light emitting diode (OLED) displays that have different luminance settings, and some described techniques may be applicable to displays that have static or fixed luminance output.
摘要翻译：本公开的技术可应用于背光显示装置。对于这样的设备，背光可以具有不同的背光强度设置，以便促进节电。根据背光强度设置，本公开的技术可以对显示器应用不同的调整。在一个示例中，可以将不同的颜色校正矩阵应用于不同的背光设置，以便在不同背光设置下实现设备中期望的调整。本文描述的调整可以解决由于不同的背光设置以及色彩通道之间的串扰造成的色度偏移。这些技术还可以应用于具有不同亮度设置的有机发光二极管（OLED）显示器，并且一些所描述的技术可以应用于具有静态或固定亮度输出的显示器。

4. 发明授权

US08809962B2 Transistor with reduced parasitic capacitance 有权
标题翻译：降低寄生电容的晶体管
公开(公告)号：US08809962B2
公开(公告)日：2014-08-19
申请号：US13218988
申请日：2011-08-26
申请人： Yanxiang Liu , Jinping Liu , Min Dai , Xiaodong Yang
发明人： Yanxiang Liu , Jinping Liu , Min Dai , Xiaodong Yang
IPC分类号： H01L29/78 , H01L21/336 , H01L29/66 , H01L29/49 , H01L29/51
CPC分类号： H01L29/6653 , H01L29/4966 , H01L29/4983 , H01L29/513 , H01L29/517 , H01L29/66545 , H01L29/66553 , H01L29/66628
摘要： Scaled transistors with reduced parasitic capacitance are formed by replacing a high-k dielectric sidewall spacer with a SiO2 or low-k dielectric sidewall spacer. Embodiments include transistors comprising a trench silicide layer spaced apart from a replacement metal gate electrode, and a layer of SiO2 or low-k material on a side surface of the replacement metal gate electrode facing the trench silicide layer. Implementing methodologies may include forming an intermediate structure comprising a removable gate with nitride spacers, removing the removable gate, forming a layer of high-k material on the nitride spacers, forming a layer of metal nitride on the high-k material, filling the opening with insulating material and then removing a portion thereof to form a recess, removing the metal nitride layers and layers of high-k material, depositing a layer of SiO2 or low-k material, and forming a replacement metal gate in the remaining recess.
摘要翻译：具有减小的寄生电容的可缩放晶体管通过用SiO 2或低k电介质侧壁间隔物代替高k电介质侧壁间隔物而形成。实施例包括晶体管，其包括与替代金属栅电极间隔开的沟槽硅化物层，以及位于替代金属栅电极的面对沟槽硅化物层的侧表面上的SiO 2或低k材料层。实施方法可以包括形成包括具有氮化物间隔物的可移除栅极的中间结构，去除可移除栅极，在氮化物间隔物上形成高k材料层，在高k材料上形成金属氮化物层，填充开口用绝缘材料，然后去除其一部分以形成凹槽，去除金属氮化物层和高k材料层，沉积SiO 2或低k材料层，并在剩余的凹槽中形成替换金属栅极。

5. 发明授权

US08809152B2 Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices 有权
标题翻译：无氧化锗原子层沉积氧化硅和高k栅极电介质用于含锗沟道的CMOS器件
公开(公告)号：US08809152B2
公开(公告)日：2014-08-19
申请号：US13300146
申请日：2011-11-18
申请人： MaryJane Brodsky , Murshed M. Chowdhury , Michael P. Chudzik , Min Dai , Siddarth A. Krishnan , Shreesh Narasimha , Shahab Siddiqui
发明人： MaryJane Brodsky , Murshed M. Chowdhury , Michael P. Chudzik , Min Dai , Siddarth A. Krishnan , Shreesh Narasimha , Shahab Siddiqui
IPC分类号： H01L21/336
CPC分类号： H01L29/518 , H01L21/28255 , H01L27/0922 , H01L29/51 , H01L29/513 , H01L29/66575 , H01L29/78
摘要： A semiconductor device including a germanium containing substrate including a gate structure on a channel region of the semiconductor substrate. The gate structure may include a silicon oxide layer that is in direct contact with an upper surface of the germanium containing substrate, at least one high-k gate dielectric layer in direct contact with the silicon oxide layer, and at least one gate conductor in direct contact with the high-k gate dielectric layer. The interface between the silicon oxide layer and the upper surface of the germanium containing substrate is substantially free of germanium oxide. A source region and a drain region may be present on opposing sides of the channel region.
摘要翻译：一种半导体器件，包括在所述半导体衬底的沟道区上包括栅极结构的含锗衬底。栅极结构可以包括与含锗衬底的上表面直接接触的氧化硅层，与氧化硅层直接接触的至少一个高k栅介质层和直接与锗氧化物层直接接触的至少一个栅极导体与高k栅介质层接触。氧化硅层和含锗衬底的上表面之间的界面基本上不含氧化锗。源极区域和漏极区域可以存在于沟道区域的相对侧上。

6. 发明申请

US20130330843A1 METHOD OF MANUFACTURING SCALED EQUIVALENT OXIDE THICKNESS GATE STACKS IN SEMICONDUCTOR DEVICES AND RELATED DESIGN STRUCTURE 有权
标题翻译：半导体器件中制造等效氧化物厚度栅极堆叠的方法及相关设计结构
公开(公告)号：US20130330843A1
公开(公告)日：2013-12-12
申请号：US13490740
申请日：2012-06-07
申请人： Michael P. Chudzik , Min Dai , Jinping Liu , Paul A. Ronsheim , Joseph F. Shepard, JR. , Shahab Siddiqui
发明人： Michael P. Chudzik , Min Dai , Jinping Liu , Paul A. Ronsheim , Joseph F. Shepard, JR. , Shahab Siddiqui
IPC分类号： H01L21/66 , G06F17/50
CPC分类号： H01L29/513 , H01L21/28185 , H01L21/28202 , H01L22/12 , H01L22/26 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device is disclosed. The method includes: forming a dielectric region on a substrate; annealing the dielectric region in an environment including ammonia (NH3); monitoring a nitrogen peak of at least one of the substrate and the dielectric region during the annealing; and adjusting a parameter of the environment based on the monitoring of the nitrogen peak.
摘要翻译：公开了一种形成半导体器件的方法。该方法包括：在基板上形成电介质区域; 在包括氨（NH 3）在内的环境中退火电介质区域; 在退火期间监测所述衬底和所述电介质区域中的至少一个的氮峰; 并根据氮峰的监测来调整环境参数。

7. 发明申请

US20120329230A1 FABRICATION OF SILICON OXIDE AND OXYNITRIDE HAVING SUB-NANOMETER THICKNESS 有权
标题翻译：具有亚纳米厚度的氧化硅和氧化亚氮的制造
公开(公告)号：US20120329230A1
公开(公告)日：2012-12-27
申请号：US13164891
申请日：2011-06-21
申请人： Michael P. Chudzik , Min Dai , Joseph F. Shepard, JR. , Shahab Siddiqui , Jinping Liu
发明人： Michael P. Chudzik , Min Dai , Joseph F. Shepard, JR. , Shahab Siddiqui , Jinping Liu
IPC分类号： H01L21/336 , H01L21/31
CPC分类号： H01L21/02052 , H01L21/0214 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02301 , H01L21/02332 , H01L21/0234 , H01L21/28211 , H01L21/28238
摘要： A method of fabricating a silicon-containing oxide layer that includes providing a chemical oxide layer on a surface of a semiconductor substrate, removing the chemical oxide layer in an oxygen-free environment at a temperature of 1000° C. or greater to provide a bare surface of the semiconductor substrate, and introducing an oxygen-containing gas at a flow rate to the bare surface of the semiconductor substrate for a first time period at the temperature of 1000° C. The temperature is then reduced to room temperature during a second time period while maintaining the flow rate of the oxygen containing gas to provide a silicon-containing oxide layer having a thickness ranging from 0.5 Å to 10 Å.
摘要翻译：一种制造含硅氧化物层的方法，包括在半导体衬底的表面上提供化学氧化物层，在1000℃或更高的温度下在无氧环境中除去化学氧化物层，以提供裸露在半导体衬底的表面上，以1000℃的温度将半导体衬底的裸露表面的含氧气体首次引入半导体衬底的裸露表面。然后在第二时间内将温度降至室温同时保持含氧气体的流速，从而提供厚度范围从0.5到10的含硅氧化物层。

8. 发明申请

US20120056911A1 ADAPTIVE COLOR CORRECTION FOR DISPLAY WITH BACKLIGHT MODULATION 有权
标题翻译：用背光调制显示的自适应颜色校正
公开(公告)号：US20120056911A1
公开(公告)日：2012-03-08
申请号：US13219416
申请日：2011-08-26
申请人： Reza Safaee-Rad , Min Dai , Milivoje Aleksic
发明人： Reza Safaee-Rad , Min Dai , Milivoje Aleksic
IPC分类号： G09G5/10
CPC分类号： G09G3/3406 , G09G3/2003 , G09G2320/0209 , G09G2320/0242 , G09G2320/0271 , G09G2320/0276 , G09G2320/0626 , G09G2320/066 , G09G2320/0666 , G09G2320/0693 , G09G2360/16 , H04N9/69
摘要： The techniques of this disclosure are applicable to backlight display devices. For such devices, the backlight may have different backlight intensity settings in order to promote power conservation. The techniques of this disclosure may apply different adjustments to the display, depending on the backlight intensity setting. In one example, different color correction matrices may be applied for different backlight settings in order to achieve desirable adjustments in the device at the different backlight settings. The adjustments described herein may address chrominance shifts due to different backlight settings as well as cross-talk between color channels. The techniques may also be applicable to organic light emitting diode (OLED) displays that have different luminance settings, and some described techniques may be applicable to displays that have static or fixed luminance output.
摘要翻译：本公开的技术可应用于背光显示装置。对于这样的设备，背光可以具有不同的背光强度设置，以便促进节电。根据背光强度设置，本公开的技术可以对显示器应用不同的调整。在一个示例中，可以将不同的颜色校正矩阵应用于不同的背光设置，以便在不同背光设置下实现设备中期望的调整。本文描述的调整可以解决由于不同的背光设置以及色彩通道之间的串扰造成的色度偏移。这些技术还可以应用于具有不同亮度设置的有机发光二极管（OLED）显示器，并且一些所描述的技术可以应用于具有静态或固定亮度输出的显示器。

9. 发明授权

US09099461B2 Method of manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices and related design structure 有权
标题翻译：在半导体器件中制造尺寸等效的氧化物厚度栅极叠层的方法及相关设计结构
公开(公告)号：US09099461B2
公开(公告)日：2015-08-04
申请号：US13490740
申请日：2012-06-07
申请人： Michael P. Chudzik , Min Dai , Jinping Liu , Paul A. Ronsheim , Joseph F. Shepard, Jr. , Shahab Siddiqui
发明人： Michael P. Chudzik , Min Dai , Jinping Liu , Paul A. Ronsheim , Joseph F. Shepard, Jr. , Shahab Siddiqui
IPC分类号： H01L21/66 , H01L29/51 , H01L21/28
CPC分类号： H01L29/513 , H01L21/28185 , H01L21/28202 , H01L22/12 , H01L22/26 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device is disclosed. The method includes: forming a dielectric region on a substrate; annealing the dielectric region in an environment including ammonia (NH3); monitoring a nitrogen peak of at least one of the substrate and the dielectric region during the annealing; and adjusting a parameter of the environment based on the monitoring of the nitrogen peak.
摘要翻译：公开了一种形成半导体器件的方法。该方法包括：在基板上形成电介质区域; 在包括氨（NH 3）在内的环境中退火电介质区域; 在退火期间监测所述衬底和所述电介质区域中的至少一个的氮峰; 并根据氮峰的监测来调整环境参数。

10. 发明授权

US08859895B2 Method for vertically grounding and leading down from center of composite pole tower and pole tower thereof 有权
标题翻译：用于垂直接地并从复合极塔及其柱塔的中心向下引导的方法
公开(公告)号：US08859895B2
公开(公告)日：2014-10-14
申请号：US13395112
申请日：2010-05-05
申请人： Zhusen Sun , Qiang Zhang , Minghua Li , Zhijun Li , Ting Liu , Feng Huo , Min Dai , Kai Liu , Xiong Wu , Dingxie Gu , Peihong Zhou , Ying Lou , Zhenqiang Li , Huiwen He
发明人： Zhusen Sun , Qiang Zhang , Minghua Li , Zhijun Li , Ting Liu , Feng Huo , Min Dai , Kai Liu , Xiong Wu , Dingxie Gu , Peihong Zhou , Ying Lou , Zhenqiang Li , Huiwen He
IPC分类号： H02G13/00 , H01R4/66 , H02G7/20 , H02G3/04
CPC分类号： H02G7/205 , H02G3/0481
摘要： A method for vertically grounding and leading down form a center of a composite pole tower includes the following steps: extending a ground down-leading wire from a center of a ground wire cross arm which is made of metal and is positioned on top of the pole tower, wherein the ground down-leading wire is vertically leaded down to the earth form the center of the composite pole tower, wherein when an lower portion of the tower body is a metal pipe, the ground down-leading wire is extended from the center of the composite material and is directly connected to the metal pipe. The method utilizes the advantage of the insulating intensity of the wall of the composite pole tower and enhances the insulating intensity of the transmission line on impact of lightning. The ground down-leading wires are prevented from short-circuiting with the tower body of the composite pole tower, so that advantage of the insulating property of the composite material of the pole towers is realized. Since the ground down-leading wire is penetrated through center of the pole tower, so that the ground down-leading wires are not exposed and are prevented from destroying by external force. And also the method is easy and simple for application.
摘要翻译：将复合极塔的中心垂直接地和引导向下的方法包括以下步骤：将地面下降的导线从金属制成的地线交叉臂的中心延伸并位于极的顶部塔，其中地下引线垂直引导到复合极塔的中心的地面，其中当塔体的下部是金属管时，地下导线从中心延伸的复合材料，并直接连接到金属管。该方法利用了复合极塔壁绝缘强度的优点，提高了雷击冲击下输电线路的绝缘强度。防止地面下降的导线与复合极塔的塔体发生短路，从而实现了极塔复合材料绝缘性能的优点。由于地面下降的导线穿过极塔的中心，使得地面下降的导线不被暴露，并且防止被外力破坏。而且该方法简单易用。

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