专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09299711B2 Field effect transistors including asymmetrical silicide structures and related devices 有权
标题翻译：场效应晶体管包括不对称硅化物结构和相关器件
公开(公告)号：US09299711B2
公开(公告)日：2016-03-29
申请号：US14032769
申请日：2013-09-20
申请人： Tae Joong Song , Gyu Hong Kim , Jae Ho Park , Jong Hoon Jung
发明人： Tae Joong Song , Gyu Hong Kim , Jae Ho Park , Jong Hoon Jung
IPC分类号： H01L29/78 , H01L27/11 , H01L29/417 , G11C11/419 , G11C11/412
CPC分类号： H01L27/1104 , G11C11/412 , G11C11/419 , H01L29/41791 , H01L29/785
摘要： A fin Field Effect Transistor (finFET) can include a source region and a drain region of the finFET. A gate of the finFET can cross over a fin of the finFET between the source and drain regions. First and second silicide layers can be on the source and drain regions respectively. The first and second silicide layers can include respective first and second surfaces that face the gate crossing over the fin, where the first and second surfaces are different sizes.
摘要翻译：鳍状场效应晶体管（finFET）可以包括finFET的源极区域和漏极区域。 finFET的栅极可以跨越源极和漏极区域之间的finFET的鳍。第一和第二硅化物层可以分别在源区和漏区上。第一和第二硅化物层可以包括面对栅极的相应的第一和第二表面，其中第一和第二表面是不同的尺寸。

2. 发明申请

US20140085966A1 FIELD EFFECT TRANSISTORS INCLUDING ASYMMETRICAL SILICIDE STRUCTURES AND RELATED DEVICES 有权
标题翻译：包括不对称硅化物结构和相关器件的场效应晶体管
公开(公告)号：US20140085966A1
公开(公告)日：2014-03-27
申请号：US14032769
申请日：2013-09-20
申请人： Tae Joong Song , Gyu Hong Kim , Jae Ho Park , Jong Hoon Jung
发明人： Tae Joong Song , Gyu Hong Kim , Jae Ho Park , Jong Hoon Jung
IPC分类号： H01L27/11 , G11C11/419
CPC分类号： H01L27/1104 , G11C11/412 , G11C11/419 , H01L29/41791 , H01L29/785
摘要： A fin Field Effect Transistor (finFET) can include a source region and a drain region of the finFET. A gate of the finFET can cross over a fin of the finFET between the source and drain regions. First and second silicide layers can be on the source and drain regions respectively. The first and second silicide layers can include respective first and second surfaces that face the gate crossing over the fin, where the first and second surfaces are different sizes.
摘要翻译：鳍状场效应晶体管（finFET）可以包括finFET的源极区域和漏极区域。 finFET的栅极可以跨越源极和漏极区域之间的finFET的鳍。第一和第二硅化物层可以分别在源区和漏区上。第一和第二硅化物层可以包括面对栅极的相应的第一和第二表面，其中第一和第二表面是不同的尺寸。

3. 发明授权

US08811069B2 Memory device and systems including the same 有权
标题翻译：内存设备和系统包括相同
公开(公告)号：US08811069B2
公开(公告)日：2014-08-19
申请号：US13591696
申请日：2012-08-22
申请人： Gyu Hong Kim , Jong Hoon Jung
发明人： Gyu Hong Kim , Jong Hoon Jung
IPC分类号： G11C11/00
CPC分类号： G11C7/22 , G11C7/08 , G11C11/41 , G11C11/419 , G11C29/023 , G11C29/028 , G11C29/50012
摘要： The memory device includes a memory cell array, an access control circuit configured to access the memory cell array, a control signal generation circuit configured to generate a control signal for controlling an operation of the access control circuit, and a variable delay circuit configured to generate a delay signal by variably delaying a clock signal according to an external signal. The control signal generation circuit adjusts an activation timing of the control signal in response to the delay signal.
摘要翻译：存储装置包括：存储单元阵列，被配置为存取存储单元阵列的访问控制电路;控制信号生成电路，被配置为产生用于控制访问控制电路的操作的控制信号;以及可变延迟电路，通过根据外部信号可变延迟时钟信号的延迟信号。控制信号发生电路根据延迟信号调整控制信号的激活定时。

4. 发明授权

US09375769B2 Method for manufacturing drive shaft 有权
标题翻译：驱动轴的制造方法
公开(公告)号：US09375769B2
公开(公告)日：2016-06-28
申请号：US14327349
申请日：2014-07-09
申请人： Jong Hoon Jung
发明人： Jong Hoon Jung , Dong Gun Kim
IPC分类号： B21C1/24 , B21D53/84 , B21D41/04 , B21C3/16 , B21C3/02 , B21C9/00 , F16C3/02
CPC分类号： B21C1/24 , B21C1/003 , B21C1/18 , B21C3/02 , B21C3/16 , B21C9/00 , B21D41/04 , B21D53/84 , B21D53/88 , B21K1/10 , C21D2221/00 , F16C3/02 , F16C3/023 , F16C2220/42
摘要： Disclosed in a method for manufacturing a drive shaft which comprises forming a first shaft unit by shrinking one side of a metallic pipe which has a uniform first strength; decreasing the thickness of an intermediate portion of the metallic pipe by drawing the intermediate portion of the metallic pipe which is integral with the first shaft unit; forming at an inner side surface of the other side of the metallic pipe a strength decrease unit which has a second strength smaller than the first strength, by heat-treating by a predetermined distance the inner side surface of the other side being opposite to one side of the metallic pipe; and forming a second shaft unit without transforming any portion of the intermediate portion by shrinking the metallic pipe which has the strength decrease unit, wherein the second shaft unit is formed by applying compression force to a portion where the strength decrease unit in the metallic pipe is formed, in a predetermine direction being vertical with respect to the axial direction of the metallic pipe.
摘要翻译：一种驱动轴的制造方法，其特征在于，包括：通过收缩具有均一的第一强度的金属管的一侧来形成第一轴单元; 通过拉拔与第一轴单元成一体的金属管的中间部分来减小金属管的中间部分的厚度; 在所述金属管的另一侧的内侧表面上形成强度降低单元，所述强度降低单元具有比所述第一强度小的第二强度，通过将另一侧的内侧表面与一侧相反地预定距离进行热处理的金属管; 并且通过使具有强度降低单元的金属管收缩而形成第二轴单元而不使中间部的任何部分变形，其中第二轴单元通过对金属管中的强度降低单元的部分施加压力而形成在相对于金属管的轴向垂直的预定方向上形成。

5. 发明授权

US08711641B2 Memory device, test operation method thereof, and system including the same 有权
标题翻译：存储器件，其测试操作方法和包括其的系统
公开(公告)号：US08711641B2
公开(公告)日：2014-04-29
申请号：US13239111
申请日：2011-09-21
申请人： Soung Hoon Sim , Jong Hoon Jung
发明人： Soung Hoon Sim , Jong Hoon Jung
IPC分类号： G11C7/10
CPC分类号： G11C29/50 , G11C11/412 , G11C2029/5006
摘要： A test operation method of a memory device includes a reference current generator generating a reference current and providing a reference voltage generated based on the reference current to one of input terminals of a sense amplifier; providing a read voltage generated based on a read current of a memory cell to another one of the input terminals of the sense amplifier; and the sense amplifier comparing the reference voltage with the read voltage.
摘要翻译：存储器件的测试操作方法包括产生参考电流的参考电流发生器，并且将基于参考电流生成的参考电压提供给读出放大器的一个输入端; 将基于存储器单元的读取电流产生的读取电压提供给读出放大器的另一个输入端; 并且读出放大器将参考电压与读取电压进行比较。

6. 发明申请

US20120140576A1 MEMORY DEVICE, TEST OPERATION METHOD THEREOF, AND SYSTEM INCLUDING THE SAME 有权
标题翻译：存储器件，其测试操作方法和包括其的系统
公开(公告)号：US20120140576A1
公开(公告)日：2012-06-07
申请号：US13239111
申请日：2011-09-21
申请人： Soung Hoon SIM , Jong Hoon Jung
发明人： Soung Hoon SIM , Jong Hoon Jung
IPC分类号： G11C7/06
CPC分类号： G11C29/50 , G11C11/412 , G11C2029/5006
摘要： A test operation method of a memory device is provided. The test operation method includes a reference current generator generating a reference current and providing a reference voltage generated based on the reference current to one of input terminals of a sense amplifier; providing a read voltage generated based on a read current of a memory cell to another one of the input terminals of the sense amplifier; and the sense amplifier comparing the reference voltage with the read voltage.
摘要翻译：提供了一种存储器件的测试操作方法。测试操作方法包括产生参考电流的参考电流发生器，并且将基于参考电流生成的参考电压提供给读出放大器的一个输入端; 将基于存储器单元的读取电流产生的读取电压提供给读出放大器的另一个输入端; 并且读出放大器将参考电压与读取电压进行比较。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式