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1. 发明申请

US20120032313A1 SEMICONDUCTOR DEVICE HAVING LATERAL DIODE 有权
标题翻译：具有横向二极管的半导体器件
公开(公告)号：US20120032313A1
公开(公告)日：2012-02-09
申请号：US13197719
申请日：2011-08-03
申请人： Takao YAMAMOTO , Norihito Tokura , Hisato Kato , Akio Nakagawa
发明人： Takao YAMAMOTO , Norihito Tokura , Hisato Kato , Akio Nakagawa
IPC分类号： H01L29/861
CPC分类号： H01L29/868 , H01L27/0664 , H01L29/0615 , H01L29/0692 , H01L29/0878 , H01L29/1095 , H01L29/405 , H01L29/42368 , H01L29/7394 , H01L29/7824
摘要： A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater than that of the first semiconductor region, a second semiconductor region located in the semiconductor layer and separated from the contact region, a first electrode electrically connected through the contact region to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region. The second semiconductor region includes a low impurity concentration portion, a high impurity concentration portion, and an extension portion. The second electrode forms an ohmic contact with the high impurity concentration portion. The extension portion has an impurity concentration greater than that of the low impurity concentration portion and extends in a thickness direction of the semiconductor layer.
摘要翻译：具有横向二极管的半导体器件包括半导体层，半导体层中的第一半导体区域，具有大于第一半导体区域的杂质浓度的杂质浓度的接触区域，位于半导体层中并与该半导体层分离的第二半导体区域接触区域，通过接触区域电连接到第一半导体区域的第一电极和与第二半导体区域电连接的第二电极。第二半导体区域包括低杂质浓度部分，高杂质浓度部分和延伸部分。第二电极与高杂质浓度部分形成欧姆接触。延伸部分的杂质浓度大于低杂质浓度部分的杂质浓度，并且在半导体层的厚度方向上延伸。

2. 发明授权

US08742534B2 Semiconductor device having lateral diode 有权
标题翻译：具有侧向二极管的半导体器件
公开(公告)号：US08742534B2
公开(公告)日：2014-06-03
申请号：US13197719
申请日：2011-08-03
申请人： Takao Yamamoto , Norihito Tokura , Hisato Kato , Akio Nakagawa
发明人： Takao Yamamoto , Norihito Tokura , Hisato Kato , Akio Nakagawa
IPC分类号： H01L29/66 , H01L29/47
CPC分类号： H01L29/868 , H01L27/0664 , H01L29/0615 , H01L29/0692 , H01L29/0878 , H01L29/1095 , H01L29/405 , H01L29/42368 , H01L29/7394 , H01L29/7824
摘要： A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater than that of the first semiconductor region, a second semiconductor region located in the semiconductor layer and separated from the contact region, a first electrode electrically connected through the contact region to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region. The second semiconductor region includes a low impurity concentration portion, a high impurity concentration portion, and an extension portion. The second electrode forms an ohmic contact with the high impurity concentration portion. The extension portion has an impurity concentration greater than that of the low impurity concentration portion and extends in a thickness direction of the semiconductor layer.
摘要翻译：具有横向二极管的半导体器件包括半导体层，半导体层中的第一半导体区域，具有大于第一半导体区域的杂质浓度的杂质浓度的接触区域，位于半导体层中并与该半导体层分离的第二半导体区域接触区域，通过接触区域电连接到第一半导体区域的第一电极和与第二半导体区域电连接的第二电极。第二半导体区域包括低杂质浓度部分，高杂质浓度部分和延伸部分。第二电极与高杂质浓度部分形成欧姆接触。延伸部分的杂质浓度大于低杂质浓度部分的杂质浓度，并且在半导体层的厚度方向上延伸。

3. 发明申请

US20120119318A1 SEMICONDUCTOR DEVICE WITH LATERAL ELEMENT 审中-公开
标题翻译：具有横向元件的半导体器件
公开(公告)号：US20120119318A1
公开(公告)日：2012-05-17
申请号：US13295236
申请日：2011-11-14
申请人： Norihito TOKURA , Takao Yamamoto , Hisato Kato , Kouji Senda , Akio Nakagawa
发明人： Norihito TOKURA , Takao Yamamoto , Hisato Kato , Kouji Senda , Akio Nakagawa
IPC分类号： H01L29/06
CPC分类号： H01L29/404 , H01L29/0696 , H01L29/735 , H01L29/7394 , H01L29/861 , H01L29/8611
摘要： In a semiconductor device in which a first electrode and a second electrode are disposed on a surface of a first conductivity-type semiconductor layer of a semiconductor substrate and a lateral element is formed to cause an electric current between the first electrode and the second electrode, a scroll-shaped resistive field plate is disposed on the semiconductor layer across an insulation film. The resistive field plate extends toward the second electrode while surrounding a periphery of the first electrode in a scroll shape. A resistance value of a total resistance of the resistive field plate is in a range between 90 kΩ and 90 MΩ.
摘要翻译：在第一电极和第二电极设置在半导体衬底的第一导电类型半导体层的表面上并形成横向元件以在第一电极和第二电极之间引起电流的半导体器件中，涡卷状电阻场板跨越绝缘膜设置在半导体层上。电阻场板朝向第二电极延伸，同时围绕第一电极的周边以涡旋形状。电阻场板的总电阻的电阻值在90kΩ/ cm2之间的范围内; 和90 M＆OHgr。

4. 发明申请

US20100060254A1 DC-DC converter 有权
标题翻译： DC-DC转换器
公开(公告)号：US20100060254A1
公开(公告)日：2010-03-11
申请号：US12585123
申请日：2009-09-03
申请人： Norihito Tokura , Hisato Kato , Norikazu Kanatake , Masakiyo Horie
发明人： Norihito Tokura , Hisato Kato , Norikazu Kanatake , Masakiyo Horie
IPC分类号： G05F5/00
CPC分类号： H02M3/158
摘要： A synchronous-rectifier type DC-DC converter includes a high-side main switch element, a low-side rectifying switch element, and a control drive circuit. The rectifying switch element includes a rectifying transistor element and a rectifying diode element connected in antiparallel with the rectifying transistor element. The control drive circuit detects an input voltage to the main switch element and determines the input voltage or a rate of increase in the input voltage. When the determined value exceeds a predetermined reference value, a complementary ON/OFF operation of the main switch element and the rectifying transistor element is released, and a state where both the main switch element and the rectifying transistor element are kept OFF for a time period that is longer than a dead-time during the complementary ON/OFF operation is set.
摘要翻译：同步整流型DC-DC转换器包括高侧主开关元件，低侧整流开关元件和控制驱动电路。整流开关元件包括整流晶体管元件和与整流晶体管元件反并联连接的整流二极管元件。控制驱动电路检测到主开关元件的输入电压，并确定输入电压或输入电压的增加率。当确定的值超过预定的参考值时，主开关元件和整流晶体管元件的互补的导通/截止操作被解除，并且主开关元件和整流晶体管元件两者保持断开一段时间的状态在补充ON / OFF操作期间比死区时间长。

5. 发明授权

US07616859B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07616859B2
公开(公告)日：2009-11-10
申请号：US12155949
申请日：2008-06-12
申请人： Norihito Tokura , Hiroki Sone , Shinji Amano , Hisato Kato
发明人： Norihito Tokura , Hiroki Sone , Shinji Amano , Hisato Kato
IPC分类号： G02B6/00
CPC分类号： H01L27/0664 , H01L29/407 , H01L29/7391 , H01L29/7397 , H01L29/861
摘要： A semiconductor device includes a spaced-channel IGBT and an antiparallel diode that are formed in a same semiconductor substrate. The IGBT includes a base layer and insulated gate trenches by which the base layer is divided into a body region connected to an emitter and a floating region disconnected from the emitter. The IGBT is formed in a cell region of an IGBT region, and the diode is formed in a diode region. A boundary region of the IGBT region is located between the cell region and the diode region. A spacing between adjacent gate trenches in the boundary region is less than a spacing between adjacent gate trenches between which the floating region is located in the cell region.
摘要翻译：半导体器件包括形成在同一半导体衬底中的间隔沟道IGBT和反并联二极管。 IGBT包括基极层和绝缘栅极沟槽，基极层被分成与发射极连接的主体区域和与发射极断开的浮动区域。 IGBT形成在IGBT区域的单元区域中，二极管形成在二极管区域中。 IGBT区域的边界区域位于单元区域和二极管区域之间。边界区域中的相邻栅极沟槽之间的间隔小于相邻栅极沟槽之间的间隔，在该沟槽之间的浮动区域位于单元区域中。

6. 发明授权

US08179106B2 DC-DC converter 有权
标题翻译： DC-DC转换器
公开(公告)号：US08179106B2
公开(公告)日：2012-05-15
申请号：US12585123
申请日：2009-09-03
申请人： Norihito Tokura , Hisato Kato , Norikazu Kanatake , Masakiyo Horie
发明人： Norihito Tokura , Hisato Kato , Norikazu Kanatake , Masakiyo Horie
IPC分类号： G05F1/613
CPC分类号： H02M3/158
摘要： A synchronous-rectifier type DC-DC converter includes a high-side main switch element, a low-side rectifying switch element, and a control drive circuit. The rectifying switch element includes a rectifying transistor element and a rectifying diode element connected in antiparallel with the rectifying transistor element. The control drive circuit detects an input voltage to the main switch element and determines the input voltage or a rate of increase in the input voltage. When the determined value exceeds a predetermined reference value, a complementary ON/OFF operation of the main switch element and the rectifying transistor element is released, and a state where both the main switch element and the rectifying transistor element are kept OFF for a time period that is longer than a dead-time during the complementary ON/OFF operation is set.
摘要翻译：同步整流型DC-DC转换器包括高侧主开关元件，低侧整流开关元件和控制驱动电路。整流开关元件包括整流晶体管元件和与整流晶体管元件反并联连接的整流二极管元件。控制驱动电路检测到主开关元件的输入电压，并确定输入电压或输入电压的增加率。当确定的值超过预定的参考值时，主开关元件和整流晶体管元件的互补的导通/截止操作被解除，并且主开关元件和整流晶体管元件两者保持断开一段时间的状态在补充ON / OFF操作期间比死区时间长。

7. 发明申请

US20090001411A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20090001411A1
公开(公告)日：2009-01-01
申请号：US12155949
申请日：2008-06-12
申请人： Norihito Tokura , Hiroki Sone , Shinji Amano , Hisato Kato
发明人： Norihito Tokura , Hiroki Sone , Shinji Amano , Hisato Kato
IPC分类号： H01L29/739
CPC分类号： H01L27/0664 , H01L29/407 , H01L29/7391 , H01L29/7397 , H01L29/861
摘要： A semiconductor device includes a spaced-channel IGBT and an antiparalell diode that are formed in a same semiconductor substrate. The IGBT includes a base layer and insulated gate trenches by which the base layer is divided into a body region connected to an emitter and a floating region disconnected from the emitter. The IGBT is formed in a cell region of an IGBT region, and the diode is formed in a diode region. A boundary region of the IGBT region is located between the cell region and the diode region. A spacing between adjacent gate trenches in the boundary region is less than a spacing between adjacent gate trenches between which the floating region is located in the cell region.
摘要翻译：半导体器件包括形成在同一半导体衬底中的间隔沟道IGBT和反分解二极管。 IGBT包括基极层和绝缘栅极沟槽，基极层被分成连接到发射极的体区和与发射极断开的浮动区域。 IGBT形成在IGBT区域的单元区域中，二极管形成在二极管区域中。 IGBT区域的边界区域位于单元区域和二极管区域之间。边界区域中的相邻栅极沟槽之间的间隔小于相邻栅极沟槽之间的间隔，在该沟槽之间的浮动区域位于单元区域中。

8. 发明申请

US20110244269A1 Perpendicular magnetic recording medium 有权
标题翻译：垂直磁记录介质
公开(公告)号：US20110244269A1
公开(公告)日：2011-10-06
申请号：US13064208
申请日：2011-03-10
申请人： Hisato Kato
发明人： Hisato Kato
IPC分类号： G11B5/667
CPC分类号： G11B5/7325 , G11B5/66 , G11B5/738
摘要： A perpendicular magnetic recording medium includes at least a soft-magnetic underlayer, a non-magnetic underlayer, a ferromagnetic intermediate layer, a non-magnetic intermediate layer, and a perpendicular magnetic recording layer sequentially stacked on a non-magnetic substrate. In an embodiment, the ferromagnetic intermediate layer is formed of a CoCr based alloy, a product Bs·t of a saturation magnetic flux density and film thickness of the ferromagnetic intermediate layer is within a range of 0.15 to 3.6 T·nm, and the non-magnetic intermediate layer has a film thickness of 3 nm or more.
摘要翻译：垂直磁记录介质至少包括依次层叠在非磁性基板上的软磁性底层，非磁性底层，铁磁中间层，非磁性中间层和垂直磁记录层。在一个实施例中，铁磁中间层由CoCr基合金形成，饱和磁通密度的乘积Bs·t和铁磁中间层的膜厚在0.15〜3.6T·nm的范围内，磁性中间层的膜厚为3nm以上。

9. 发明申请

US20100265309A1 NON-AQUEOUS INK-JET INK AND INK-JET RECORDING METHOD 有权
标题翻译：非水墨喷射墨水和墨水记录方法
公开(公告)号：US20100265309A1
公开(公告)日：2010-10-21
申请号：US12742104
申请日：2008-03-05
申请人： Manabu Kaneko , Hisato Kato
发明人： Manabu Kaneko , Hisato Kato
IPC分类号： B41J2/01 , C09D11/10
CPC分类号： C09D11/38 , B41M5/0023 , C09D11/322 , C09D11/36
摘要： A non-aqueous ink-jet ink which has printability on non-absorbing recording media such as polyvinyl chloride (abrasion resistance and water resistance), is excellent in ejection stability and safety, is free from problems concerning odor, does not cause operational abnormality in an ink-jet head even in long-term use, and can be stably used even after long-term storage. Also provided is a method of ink-jet recording with the ink. This non-aqueous ink-jet ink comprises a pigment, a binder resin, and an organic solvent. It is characterized in that at least 60 mass % of the organic solvent is accounted for by a water-soluble organic solvent and that the content in the ink of a metal salt which is the highest in content among the salts of metals selected among sodium, potassium, magnesium, and calcium is 3-50 ppm in terms of metal-ion concentration.
摘要翻译：在聚氯乙烯等非吸收性记录介质（耐磨损性和耐水性）上具有可印刷性的非水性喷墨油墨，喷射稳定性和安全性优异，无异味问题，不会引起操作异常喷墨头即使长期使用也可以稳定使用。还提供了一种利用墨水进行喷墨记录的方法。该非水性喷墨油墨包括颜料，粘合剂树脂和有机溶剂。其特征在于，通过水溶性有机溶剂考虑至少60质量％的有机溶剂，并且金属盐中的含量最高的金属盐的含量选自钠，钾，镁和钙的金属离子浓度为3-50ppm。

10. 再颁专利

USRE36220E Magnetic recording medium having a magnetic layer with specified limits of both RA and R10Z surface roughness 失效
标题翻译：具有RA和R10Z表面粗糙度的规定极限的磁性层的磁记录介质
公开(公告)号：USRE36220E
公开(公告)日：1999-06-01
申请号：US611619
申请日：1996-03-08
申请人： Takahiro Mori , Kunitsuna Sasaki , Hisato Kato , Kazuyoshi Imai , Takahiro Hayashi
发明人： Takahiro Mori , Kunitsuna Sasaki , Hisato Kato , Kazuyoshi Imai , Takahiro Hayashi
IPC分类号： G11B5/70 , G11B5/714 , G11B5/716 , G11B5/738 , G11B5/78 , G11B5/842 , G11B5/00
CPC分类号： G11B5/70 , G11B5/714 , G11B5/716 , G11B5/738 , G11B5/78 , Y10S428/90 , Y10T428/24355 , Y10T428/25 , Y10T428/256 , Y10T428/257 , Y10T428/258 , Y10T428/265 , Y10T428/273
摘要： Disclosed are a magnetic recording medium which comprises a non-magnetic support, one or more coating layers provided on the non-magnetic support and an upper layer of the coating layers being a magnetic layer containing ferromagnetic metallic powder with the total thickness of the coating layers being 0.5 to 2.5 .mu.m, wherein the magnetic layer has a surface roughness Ra of 1.0 to 4.6 nm and a surface roughness R10z of 8.0 to 35.0 nm, which satisfy the relations of:Ra.ltoreq.-0.47t+0.5/t+3.8 andR10z.ltoreq.-1.50t+6.0/t+23.0where t is the total thickness of the coating layers in terms of .mu.m,and an aliphatic acid ester is contained in the surface portion of the magnetic layer in an amount of 5 to 50 mg/m.sup.2, and a process for preparing the same.
摘要翻译：公开了一种磁记录介质，其包括非磁性载体，设置在非磁性载体上的一个或多个涂层，涂层的上层是包含铁磁性金属粉末的磁性层，其中涂层的总厚度为0.5〜2.5μm，其中磁性层的表面粗糙度Ra为1.0〜4.6nm，表面粗糙度R10z为8.0〜35.0nm，满足关系：Ra≤0.47t+ 0.5 / t + 3.8和R10z

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