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1. 发明申请

US20120032313A1 SEMICONDUCTOR DEVICE HAVING LATERAL DIODE 有权
标题翻译：具有横向二极管的半导体器件
公开(公告)号：US20120032313A1
公开(公告)日：2012-02-09
申请号：US13197719
申请日：2011-08-03
申请人： Takao YAMAMOTO , Norihito Tokura , Hisato Kato , Akio Nakagawa
发明人： Takao YAMAMOTO , Norihito Tokura , Hisato Kato , Akio Nakagawa
IPC分类号： H01L29/861
CPC分类号： H01L29/868 , H01L27/0664 , H01L29/0615 , H01L29/0692 , H01L29/0878 , H01L29/1095 , H01L29/405 , H01L29/42368 , H01L29/7394 , H01L29/7824
摘要： A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater than that of the first semiconductor region, a second semiconductor region located in the semiconductor layer and separated from the contact region, a first electrode electrically connected through the contact region to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region. The second semiconductor region includes a low impurity concentration portion, a high impurity concentration portion, and an extension portion. The second electrode forms an ohmic contact with the high impurity concentration portion. The extension portion has an impurity concentration greater than that of the low impurity concentration portion and extends in a thickness direction of the semiconductor layer.
摘要翻译：具有横向二极管的半导体器件包括半导体层，半导体层中的第一半导体区域，具有大于第一半导体区域的杂质浓度的杂质浓度的接触区域，位于半导体层中并与该半导体层分离的第二半导体区域接触区域，通过接触区域电连接到第一半导体区域的第一电极和与第二半导体区域电连接的第二电极。第二半导体区域包括低杂质浓度部分，高杂质浓度部分和延伸部分。第二电极与高杂质浓度部分形成欧姆接触。延伸部分的杂质浓度大于低杂质浓度部分的杂质浓度，并且在半导体层的厚度方向上延伸。

2. 发明授权

US08742534B2 Semiconductor device having lateral diode 有权
标题翻译：具有侧向二极管的半导体器件
公开(公告)号：US08742534B2
公开(公告)日：2014-06-03
申请号：US13197719
申请日：2011-08-03
申请人： Takao Yamamoto , Norihito Tokura , Hisato Kato , Akio Nakagawa
发明人： Takao Yamamoto , Norihito Tokura , Hisato Kato , Akio Nakagawa
IPC分类号： H01L29/66 , H01L29/47
CPC分类号： H01L29/868 , H01L27/0664 , H01L29/0615 , H01L29/0692 , H01L29/0878 , H01L29/1095 , H01L29/405 , H01L29/42368 , H01L29/7394 , H01L29/7824
摘要： A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater than that of the first semiconductor region, a second semiconductor region located in the semiconductor layer and separated from the contact region, a first electrode electrically connected through the contact region to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region. The second semiconductor region includes a low impurity concentration portion, a high impurity concentration portion, and an extension portion. The second electrode forms an ohmic contact with the high impurity concentration portion. The extension portion has an impurity concentration greater than that of the low impurity concentration portion and extends in a thickness direction of the semiconductor layer.
摘要翻译：具有横向二极管的半导体器件包括半导体层，半导体层中的第一半导体区域，具有大于第一半导体区域的杂质浓度的杂质浓度的接触区域，位于半导体层中并与该半导体层分离的第二半导体区域接触区域，通过接触区域电连接到第一半导体区域的第一电极和与第二半导体区域电连接的第二电极。第二半导体区域包括低杂质浓度部分，高杂质浓度部分和延伸部分。第二电极与高杂质浓度部分形成欧姆接触。延伸部分的杂质浓度大于低杂质浓度部分的杂质浓度，并且在半导体层的厚度方向上延伸。

3. 发明申请

US20120119318A1 SEMICONDUCTOR DEVICE WITH LATERAL ELEMENT 审中-公开
标题翻译：具有横向元件的半导体器件
公开(公告)号：US20120119318A1
公开(公告)日：2012-05-17
申请号：US13295236
申请日：2011-11-14
申请人： Norihito TOKURA , Takao Yamamoto , Hisato Kato , Kouji Senda , Akio Nakagawa
发明人： Norihito TOKURA , Takao Yamamoto , Hisato Kato , Kouji Senda , Akio Nakagawa
IPC分类号： H01L29/06
CPC分类号： H01L29/404 , H01L29/0696 , H01L29/735 , H01L29/7394 , H01L29/861 , H01L29/8611
摘要： In a semiconductor device in which a first electrode and a second electrode are disposed on a surface of a first conductivity-type semiconductor layer of a semiconductor substrate and a lateral element is formed to cause an electric current between the first electrode and the second electrode, a scroll-shaped resistive field plate is disposed on the semiconductor layer across an insulation film. The resistive field plate extends toward the second electrode while surrounding a periphery of the first electrode in a scroll shape. A resistance value of a total resistance of the resistive field plate is in a range between 90 kΩ and 90 MΩ.
摘要翻译：在第一电极和第二电极设置在半导体衬底的第一导电类型半导体层的表面上并形成横向元件以在第一电极和第二电极之间引起电流的半导体器件中，涡卷状电阻场板跨越绝缘膜设置在半导体层上。电阻场板朝向第二电极延伸，同时围绕第一电极的周边以涡旋形状。电阻场板的总电阻的电阻值在90kΩ/ cm2之间的范围内; 和90 M＆OHgr。

4. 发明授权

US08854033B2 Current sensor, inverter circuit, and semiconductor device having the same 有权
标题翻译：电流传感器，逆变器电路和具有相同功能的半导体器件
公开(公告)号：US08854033B2
公开(公告)日：2014-10-07
申请号：US13150764
申请日：2011-06-01
申请人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
发明人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
IPC分类号： G01R1/20
CPC分类号： H01L27/1203 , G01R19/0092 , H01L21/76283 , H01L23/585 , H01L29/0696 , H01L29/405 , H01L29/7394 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.
摘要翻译：具有横向半导体元件的半导体器件包括半导体衬底，衬底上的第一电极，衬底上的第二电极和位于衬底中的隔离结构，以将衬底分成第一岛和与第一岛电绝缘的第二岛第一个岛屿。横向半导体元件包括位于第一岛中的主单元和位于第二岛中的感测单元。主电池使得第一电流在第一电极和第二电极之间流动，使得第一电流沿着基板的表面在横向方向上流动。通过检测流过感测单元的第二电流来检测第一电流。

5. 发明申请

US20110298446A1 CURRENT SENSOR, INVERTER CIRCUIT, AND SEMICONDUCTOR DEVICE HAVING THE SAME 有权
标题翻译：电流传感器，逆变器电路和具有该电流传感器的半导体器件
公开(公告)号：US20110298446A1
公开(公告)日：2011-12-08
申请号：US13150764
申请日：2011-06-01
申请人： Satoshi SHIRAKI , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
发明人： Satoshi SHIRAKI , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
IPC分类号： G01R1/20 , H01L29/739
CPC分类号： H01L27/1203 , G01R19/0092 , H01L21/76283 , H01L23/585 , H01L29/0696 , H01L29/405 , H01L29/7394 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.
摘要翻译：具有横向半导体元件的半导体器件包括半导体衬底，衬底上的第一电极，衬底上的第二电极和位于衬底中的隔离结构，以将衬底分成第一岛和与第一岛电绝缘的第二岛第一个岛屿。横向半导体元件包括位于第一岛中的主单元和位于第二岛中的感测单元。主电池使得第一电流在第一电极和第二电极之间流动，使得第一电流沿着基板的表面在横向方向上流动。通过检测流过感测单元的第二电流来检测第一电流。

6. 发明授权

US08791690B2 Current sensor, inverter circuit, and semiconductor device having the same 有权
公开(公告)号：US08791690B2
公开(公告)日：2014-07-29
申请号：US13150764
申请日：2011-06-01
申请人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
发明人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
IPC分类号： G01R1/20
摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.

7. 发明授权

US08354691B2 Lateral insulated-gate bipolar transistor 有权
标题翻译：侧面绝缘栅双极晶体管
公开(公告)号：US08354691B2
公开(公告)日：2013-01-15
申请号：US13226636
申请日：2011-09-07
申请人： Norihito Tokura , Shigeki Takahashi , Youichi Ashida , Akio Nakagawa
发明人： Norihito Tokura , Shigeki Takahashi , Youichi Ashida , Akio Nakagawa
IPC分类号： H01L29/739
CPC分类号： H01L29/7394 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/405 , H01L29/43 , H01L29/7397
摘要： A N-channel lateral insulated-gate bipolar transistor includes a semiconductor substrate, a drift layer, a collector region, a channel layer, an emitter region, a gate insulation film, a gate electrode, a collector electrode, an emitter electrode. The collector region includes a high impurity concentration region having a high impurity concentration and a low impurity concentration region having a lower impurity concentration than the high impurity concentration region. The collector electrode is in ohmic contact with the high impurity concentration region and in schottky contact with the low impurity concentration region.
摘要翻译： N沟道横向绝缘栅双极晶体管包括半导体衬底，漂移层，集电极区，沟道层，发射极区，栅极绝缘膜，栅电极，集电极，发射极。集电极区域包括具有高杂质浓度的高杂质浓度区域和杂质浓度低于高杂质浓度区域的低杂质浓度区域。集电极与高杂质浓度区域欧姆接触，与低杂质浓度区域进行肖特基接触。

8. 发明申请

US20120061726A1 LATERAL INSULATED-GATE BIPOLAR TRANSISTOR 有权
标题翻译：横向绝缘栅双极晶体管
公开(公告)号：US20120061726A1
公开(公告)日：2012-03-15
申请号：US13226636
申请日：2011-09-07
申请人： Norihito TOKURA , Shigeki Takahashi , Youichi Ashida , Akio Nakagawa
发明人： Norihito TOKURA , Shigeki Takahashi , Youichi Ashida , Akio Nakagawa
IPC分类号： H01L29/739
CPC分类号： H01L29/7394 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/405 , H01L29/43 , H01L29/7397
摘要： A N-channel lateral insulated-gate bipolar transistor includes a semiconductor substrate, a drift layer, a collector region, a channel layer, an emitter region, a gate insulation film, a gate electrode, a collector electrode, an emitter electrode. The collector region includes a high impurity concentration region having a high impurity concentration and a low impurity concentration region having a lower impurity concentration than the high impurity concentration region. The collector electrode is in ohmic contact with the high impurity concentration region and in schottky contact with the low impurity concentration region.
摘要翻译： N沟道横向绝缘栅双极晶体管包括半导体衬底，漂移层，集电极区，沟道层，发射极区，栅极绝缘膜，栅电极，集电极，发射极。集电极区域包括具有高杂质浓度的高杂质浓度区域和杂质浓度低于高杂质浓度区域的低杂质浓度区域。集电极与高杂质浓度区域欧姆接触，与低杂质浓度区域进行肖特基接触。

9. 发明申请

US20110291157A1 LATERAL INSULATED GATE BIPOLAR TRANSISTOR 审中-公开
标题翻译：横向绝缘门双极晶体管
公开(公告)号：US20110291157A1
公开(公告)日：2011-12-01
申请号：US13114148
申请日：2011-05-24
申请人： Shigeki TAKAHASHI , Norihito Tokura , Satoshi Shiraki , Youichi Ashida , Akio Nakagawa
发明人： Shigeki TAKAHASHI , Norihito Tokura , Satoshi Shiraki , Youichi Ashida , Akio Nakagawa
IPC分类号： H01L29/739
CPC分类号： H01L29/7393 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/405 , H01L29/7394
摘要： A lateral insulated gate bipolar transistor includes a semiconductor substrate including a drift layer, a collector region, a channel layer, an emitter region, a gate insulating layer, a gate electrode, a collector electrode, an emitter electrode, and a barrier layer. The barrier layer is disposed along either side of the collector region and is located to a depth deeper than a bottom of the channel layer. The barrier layer has an impurity concentration that is higher than an impurity concentration of the drift layer. The barrier layer has a first end close to the collector region and a second end far from the collector region. The first end is located between the channel layer and the collector region, and the second end is located on the bottom of the channel layer.
摘要翻译：横向绝缘栅双极晶体管包括包括漂移层，集电极区域，沟道层，发射极区域，栅极绝缘层，栅电极，集电极，发射极和阻挡层的半导体衬底。阻挡层沿着集电极区域的两侧设置，并且位于比通道层的底部更深的深度。阻挡层的杂质浓度高于漂移层的杂质浓度。阻挡层具有靠近集电极区域的第一端和远离集电极区域的第二端。第一端位于沟道层和集电极区之间，第二端位于沟道层的底部。

10. 发明授权

US08972769B2 Data processing apparatus and control method for controlling clock frequency based on calculated frequency-to-response-time ratios 有权
标题翻译：数据处理装置和控制方法，用于根据计算出的频率响应时间比来控制时钟频率
公开(公告)号：US08972769B2
公开(公告)日：2015-03-03
申请号：US13011712
申请日：2011-01-21
申请人： Akio Nakagawa , Hisashi Ishikawa
发明人： Akio Nakagawa , Hisashi Ishikawa
IPC分类号： G06F1/04 , G06F15/16 , G06F9/30 , G06F9/40 , G06F9/00 , G06F1/32
CPC分类号： G06F1/3203 , G06F1/324 , Y02D10/126
摘要： A data processing apparatus includes: a plurality of processing units adapted to process data according to input operation clocks; and a control unit adapted to measure response times of the plurality of processing units when the operation clocks of a common frequency are supplied to the plurality of processing units, and to control a frequency of the operation clocks to be supplied to at least one of the plurality of processing units so that a plurality of measured response times become closer to each other.
摘要翻译：数据处理装置包括：多个处理单元，适于根据输入的操作时钟处理数据; 以及控制单元，其适于在向所述多个处理单元提供公共频率的操作时钟时测量所述多个处理单元的响应时间，并且控制要提供给所述多个处理单元中的至少一个的所述操作时钟的频率多个处理单元，使得多个测量的响应时间变得更接近。

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