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1. 发明授权

US08339750B2 Spin accumulation magnetic sensor 有权
标题翻译：旋转积累磁传感器
公开(公告)号：US08339750B2
公开(公告)日：2012-12-25
申请号：US12471909
申请日：2009-05-26
申请人： Tomoyuki Sasaki
发明人： Tomoyuki Sasaki
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G01R33/098 , G11B5/398
摘要： A magnetic sensor comprises a nonmagnetic conductive layer, a free magnetization layer disposed on a first part of the nonmagnetic conductive layer, a fixed magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part, upper and lower first magnetic shield layers opposing each other through the nonmagnetic conductive layer and free magnetization layer interposed therebetween, upper and lower second magnetic shield layers opposing each other through the nonmagnetic conductive layer and fixed magnetization layer interposed therebetween, and an electrically insulating layer disposed between the lower second magnetic shield layer and the nonmagnetic conductive layer, while the lower first magnetic shield layer is arranged closer to the nonmagnetic conductive layer than is the lower second magnetic shield layer.
摘要翻译：磁传感器包括非磁性导电层，设置在非磁性导电层的第一部分上的自由磁化层，设置在不同于第一部分的非磁性导电层的第二部分上的固定磁化层，上部和下部第一磁屏蔽通过非磁性导电层和介于其间的自由磁化层彼此相对的层，通过非磁性导电层和介于其间的固定磁化层彼此相对的上下第二磁屏蔽层和设置在下第二磁屏蔽之间的电绝缘层层和非磁性导电层，而下部第一磁屏蔽层比下部第二磁屏蔽层更靠近非磁性导电层布置。

2. 发明申请

US20080180840A1 THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
标题翻译：薄膜磁头，头盖组件和硬盘系统
公开(公告)号：US20080180840A1
公开(公告)日：2008-07-31
申请号：US11668820
申请日：2007-01-30
申请人： Hideyuki Yatsu , Akifumi Kamijima , Hitoshi Hatate , Tomoyuki Sasaki
发明人： Hideyuki Yatsu , Akifumi Kamijima , Hitoshi Hatate , Tomoyuki Sasaki
IPC分类号： G11B5/147 , G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116
摘要： There is a thin-film magnetic head provided, which comprises a perpendicular recording head portion including a thin-film coil adapted to generate a magnetic flux, and a main magnetic pole layer that extends rearward from a recording medium opposite plane facing a recording medium and has a main magnetic pole adapted to release a magnetic flux produced at the thin-film coil toward the recording medium. A given concave groove form that is more constricted as the lower end draws nearer is provided at or near the flare point of the front end of the main magnetic pole, so that the flow of the magnetic flux through the main magnetic pole is focused on the upper end edge (gap portion), thereby improving overwrite performance and holding back the occurrence of pole erasure.
摘要翻译：提供了一种薄膜磁头，其包括垂直记录头部分，该垂直记录头部分包括适于产生磁通量的薄膜线圈，以及从与记录介质相对的记录介质向后延伸的主磁极层，以及具有适于将在薄膜线圈处产生的磁通朝向记录介质释放的主磁极。在主磁极的前端的喇叭口处或附近设置由于下端越靠近而更加收缩的给定的凹槽形状，使得通过主磁极的磁通量的流动聚焦在上边缘（间隙部分），从而提高覆盖性能并阻止磁极擦除的发生。

3. 发明授权

US06960531B2 Method of manufacturing electronic device 失效
标题翻译：制造电子装置的方法
公开(公告)号：US06960531B2
公开(公告)日：2005-11-01
申请号：US10819968
申请日：2004-04-08
申请人： Tomoyuki Sasaki , Takao Yamaguchi , Hideo Nikoh
发明人： Tomoyuki Sasaki , Takao Yamaguchi , Hideo Nikoh
IPC分类号： H01L21/28 , H01L21/308 , H01L21/311 , H01L21/3213 , H01L21/302 , B08B6/00 , H01L21/461
CPC分类号： H01L21/0206 , H01L21/02063 , H01L21/28123 , H01L21/3081 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/32137 , H01L21/32139 , H01L21/76802 , H01L21/76807 , H01L21/76814 , H01L21/76838
摘要： After forming an insulating film on an underlying layer, a resist pattern is formed on the insulating film. The insulating film is etched by using the resist pattern as a mask, thereby forming an insulating film pattern. Without removing the resist pattern, exposed portions of the underlying layer and the insulating film pattern are subjected to a plasma treatment, cleaning, a heat treatment or the like, so that a deposition grown during the formation of the insulating film pattern can be removed. Thereafter, the underlying layer is etched by using at least the insulating film pattern as a mask. As a result, even when a strict pattern rule is employed, pattern defects can be prevented from being caused in etching a multi-layer film.
摘要翻译：在下层形成绝缘膜之后，在绝缘膜上形成抗蚀剂图案。通过使用抗蚀剂图案作为掩模来蚀刻绝缘膜，由此形成绝缘膜图案。在不去除抗蚀剂图案的情况下，对下面的层和绝缘膜图案的暴露部分进行等离子体处理，清洁，热处理等，从而可以去除在形成绝缘膜图案期间生长的沉积。此后，使用至少绝缘膜图案作为掩模来蚀刻下层。结果，即使采用严格的图案规则，也可以防止在蚀刻多层膜时引起图案缺陷。

4. 发明授权

US06750149B2 Method of manufacturing electronic device 有权
标题翻译：制造电子装置的方法
公开(公告)号：US06750149B2
公开(公告)日：2004-06-15
申请号：US10043257
申请日：2002-01-14
申请人： Tomoyuki Sasaki , Takao Yamaguchi , Hideo Nikoh
发明人： Tomoyuki Sasaki , Takao Yamaguchi , Hideo Nikoh
IPC分类号： H01L21302
CPC分类号： H01L21/0206 , H01L21/02063 , H01L21/28123 , H01L21/3081 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/32137 , H01L21/32139 , H01L21/76802 , H01L21/76807 , H01L21/76814 , H01L21/76838
摘要： After forming an insulating film on an underlying layer, a resist pattern is formed on the insulating film. The insulating film is etched by using the resist pattern as a mask, thereby forming an insulating film pattern. Without removing the resist pattern, exposed portions of the underlying layer and the insulating film pattern are subjected to a plasma treatment, cleaning, a heat treatment or the like, so that a deposition grown during the formation of the insulating film pattern can be removed. Thereafter, the underlying layer is etched by using at least the insulating film pattern as a mask. As a result, even when a strict pattern rule is employed, pattern defects can be prevented from being caused in etching a multi-layer film.
摘要翻译：在下层形成绝缘膜之后，在绝缘膜上形成抗蚀剂图案。通过使用抗蚀剂图案作为掩模来蚀刻绝缘膜，由此形成绝缘膜图案。在不去除抗蚀剂图案的情况下，对下面的层和绝缘膜图案的暴露部分进行等离子体处理，清洁，热处理等，从而可以去除在形成绝缘膜图案期间生长的沉积。此后，使用至少绝缘膜图案作为掩模来蚀刻下层。结果，即使采用严格的图案规则，也可以防止在蚀刻多层膜时引起图案缺陷。

5. 发明授权

US5060073A Solid-state image device and output compensate method thereof 失效
标题翻译：固态图像装置及其输出补偿方法
公开(公告)号：US5060073A
公开(公告)日：1991-10-22
申请号：US509328
申请日：1990-04-16
申请人： Shinichi Yamaguchi , Tomoyuki Sasaki
发明人： Shinichi Yamaguchi , Tomoyuki Sasaki
IPC分类号： H04N5/335 , H04N5/341 , H04N5/347 , H04N5/351 , H04N5/353 , H04N5/359 , H04N5/3722 , H04N5/376 , H04N5/378
CPC分类号： H04N5/217 , H04N5/2173
摘要： The solid-state image device includes a compensating device for differences in the voltage level of the data representing the first and the second field images which consist of one picture image. The compensating device outputs one field image data without change and amplifies the remaining field image data according to the differences in the voltage level of the data of the first and second field.
摘要翻译：固态图像装置包括用于表示由一个图像图像组成的第一和第二场图像的数据的电压电平差异的补偿装置。补偿装置不改变地输出一个场图像数据，并且根据第一场和第二场数据的电压电平的差异来放大剩余的场图像数据。

6. 发明授权

US08872514B2 Magnetic sensor, magnetic detector, and magnetic head 有权
标题翻译：磁传感器，磁检测器和磁头
公开(公告)号：US08872514B2
公开(公告)日：2014-10-28
申请号：US13017707
申请日：2011-01-31
申请人： Tomoyuki Sasaki , Tohru Oikawa , Kiyoshi Noguchi
发明人： Tomoyuki Sasaki , Tohru Oikawa , Kiyoshi Noguchi
IPC分类号： G01R33/02 , G11B5/33 , G01R33/09 , B82Y25/00 , G01R33/12
CPC分类号： G01R33/1284 , B82Y25/00 , G01R33/093
摘要： A magnetic sensor comprises a first ferromagnetic body, a second ferromagnetic body, a channel extending from the first ferromagnetic body to the second ferromagnetic body, a magnetic shield covering the channel, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the channel.
摘要翻译：磁传感器包括第一铁磁体，第二铁磁体，从第一铁磁体延伸到第二铁磁体的通道，覆盖通道的磁屏蔽以及设置在通道和磁屏蔽之间的绝缘膜，而磁屏蔽件具有朝向通道延伸的通孔。

7. 发明授权

US08502332B2 Magnetic sensor and magnetic head 有权
标题翻译：磁传感器和磁头
公开(公告)号：US08502332B2
公开(公告)日：2013-08-06
申请号：US13227135
申请日：2011-09-07
申请人： Tomoyuki Sasaki , Tohru Oikawa
发明人： Tomoyuki Sasaki , Tohru Oikawa
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , G01R33/093 , G11B5/332 , H01L43/08
摘要： A magnetic sensor 1 comprises a main channel layer 7a having first, second, and third regions 71, 72, 73 and extending in a first direction; a first ferromagnetic layer 12A mounted on the first region 71; a second ferromagnetic layer 12B mounted on the second region 72; a projection channel layer 7b projecting in a direction perpendicular to a thickness direction of the main channel layer 7a from a side face of the third region 73 between the first and second regions 71, 72 in the main channel layer 7a; and a magnetic shield S covering both sides in the thickness direction of the projection channel layer 7b and both sides in the first direction of the projection channel layer 7b and exposing an end face 7c in the projecting direction of the projection channel layer 7b.
摘要翻译：磁传感器1包括具有第一，第二和第三区域71,72,73并沿第一方向延伸的主通道层7a; 安装在第一区域71上的第一铁磁层12A; 安装在第二区域72上的第二铁磁层12B; 在主沟道层7a中的第一和第二区域71,72之间从第三区域73的侧面垂直于主沟道层7a的厚度方向的方向突出的投影通道层7b; 以及覆盖投影通道层7b的厚度方向的两侧和投影通道层7b的第一方向上的两侧的磁屏蔽S，并且在投影通道层7b的突出方向上露出端面7c。

8. 发明授权

US08488282B2 Magnetic sensor, magnetic detector, and magnetic head 有权
标题翻译：磁传感器，磁检测器和磁头
公开(公告)号：US08488282B2
公开(公告)日：2013-07-16
申请号：US13017935
申请日：2011-01-31
申请人： Tomoyuki Sasaki , Tohru Oikawa , Kiyoshi Noguchi
发明人： Tomoyuki Sasaki , Tohru Oikawa , Kiyoshi Noguchi
IPC分类号： G11B5/33
CPC分类号： G01R33/1284 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B2005/3996
摘要： A magnetic sensor comprises a channel, a ferromagnetic body and first and second reference electrodes on the channel, a magnetic shield covering a part of the channel opposing the ferromagnetic body, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the part of the channel opposing the ferromagnetic body.
摘要翻译：磁传感器包括通道，铁磁体和通道上的第一和第二参考电极，覆盖与铁磁体相对的通道的一部分的磁屏蔽以及设置在通道和磁屏蔽之间的绝缘膜，而磁性传感器屏蔽件具有朝向与铁磁体相对的通道的部分延伸的通孔。

9. 发明授权

US08481337B2 Manufacturing method of silicon spin transport device and silicon spin transport device 有权
标题翻译：硅自旋输送装置和硅自旋输送装置的制造方法
公开(公告)号：US08481337B2
公开(公告)日：2013-07-09
申请号：US12690566
申请日：2010-01-20
申请人： Tomoyuki Sasaki , Tohru Oikawa , Katsumichi Tagami
发明人： Tomoyuki Sasaki , Tohru Oikawa , Katsumichi Tagami
IPC分类号： H01L43/00
CPC分类号： H01L29/66984 , H01L29/0657 , H01L29/0684
摘要： An object of the present invention is to provide a silicon spin transport device manufacturing method and silicon spin transport device whereby improved voltage output characteristics can be obtained. The silicon spin transport device manufacturing method comprises: a first step of patterning a silicon film by wet etching and forming a silicon channel layer; and a second step of forming a magnetization free layer and a magnetization fixed layer, which are apart from each other, on the silicon channel layer.
摘要翻译：本发明的目的是提供一种硅自旋传输装置的制造方法和硅自旋传输装置，从而可获得改进的电压输出特性。硅自旋传输器件的制造方法包括：通过湿蚀刻图案化硅膜并形成硅沟道层的第一步骤; 以及在硅沟道层上形成彼此分开的无磁化层和磁化固定层的第二步骤。

10. 发明授权

US08426929B2 Spin transport type magnetic sensor 有权
标题翻译：旋转式磁传感器
公开(公告)号：US08426929B2
公开(公告)日：2013-04-23
申请号：US13396062
申请日：2012-02-14
申请人： Tomoyuki Sasaki , Tohru Oikawa , Kiyoshi Noguchi
发明人： Tomoyuki Sasaki , Tohru Oikawa , Kiyoshi Noguchi
IPC分类号： H01L27/14
CPC分类号： H01L43/10 , H01L43/08 , H01L43/12
摘要： The magnetic sensor includes a base substrate having a magnetic shield layer; a single-domain semiconductor crystal layer attached via an insulating film on the magnetic shield layer of the base substrate; a first ferromagnetic layer formed on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a first tunnel barrier layer; and a second ferromagnetic layer formed, at a distance from the first ferromagnetic layer, on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a second tunnel barrier layer.
摘要翻译：磁传感器包括具有磁屏蔽层的基底基板; 通过绝缘膜附着在基底基板的磁屏蔽层上的单畴半导体晶体层; 经由第一隧道势垒层在所述半导体晶体层的与所述绝缘膜相对的所述半导体晶体层的顶部上形成的第一铁磁层; 以及第二铁磁层，其经由第二隧道势垒层与半导体晶体层的与绝缘膜相隔一定距离的第一铁磁层一定距离形成。

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