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    • 7. 发明申请
    • TMR Device with Improved MgO Barrier
    • 具有改善MgO阻挡层的TMR器件
    • US20120235258A1
    • 2012-09-20
    • US13482017
    • 2012-05-29
    • Tong ZhaoHui-Chuan WangMin LiKunliang Zhang
    • Tong ZhaoHui-Chuan WangMin LiKunliang Zhang
    • H01L29/82
    • H01F41/307B82Y40/00G11C11/161H01L43/12
    • A method of forming a high performance magnetic tunnel junction (MTJ) is disclosed wherein the tunnel barrier includes at least three metal oxide layers. The tunnel barrier stack is partially built by depositing a first metal layer, performing a natural oxidation (NOX) process, depositing a second metal layer, and performing a second NOX process to give a MOX1/MOX2 configuration. An uppermost metal layer on the MOX2 layer is not oxidized until after the MTJ stack is completely formed and an annealing process is performed to drive unreacted oxygen in the MOX1 and MOX2 layers into the uppermost metal layer. In an alternative embodiment, a plurality of metal oxide layers is formed on the MOX1 layer before the uppermost metal layer is deposited. The resulting MTJ stack has an ultralow RA around 1 ohm-μm2 and maintains a high magnetoresistive ratio characteristic of a single metal oxide tunnel barrier layer.
    • 公开了一种形成高性能磁隧道结(MTJ)的方法,其中隧道势垒包括至少三个金属氧化物层。 通过沉积第一金属层,执行自然氧化(NOX)工艺,沉积第二金属层以及执行第二NOX工艺以产生MOX1 / MOX2配置来部分构建隧道势垒堆叠。 在MOX2层上的最上层的金属层直到MTJ堆叠完全形成之后才被氧化,并且进行退火处理以将MOX1和MOX2层中的未反应的氧气驱入最上层的金属层。 在替代实施例中,在最上层金属层被沉积​​之前,在MOX1层上形成多个金属氧化物层。 所得到的MTJ堆叠具有约1欧姆 - μm2的超低RA,并且保持单个金属氧化物隧道势垒层的高磁阻比特性。