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1. 发明授权

US09021685B2 Two step annealing process for TMR device with amorphous free layer 有权
公开(公告)号：US09021685B2
公开(公告)日：2015-05-05
申请号：US12075605
申请日：2008-03-12
申请人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
发明人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
IPC分类号： G11B5/127 , G11B5/39 , B82Y10/00 , B82Y25/00 , G01R33/09 , G11B5/31 , G11C11/16 , H01L43/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11C11/16 , G11C11/161 , H01L43/12 , Y10T29/49034
摘要： An annealing process for a TMR or GMR sensor having an amorphous free layer is disclosed and employs at least two annealing steps. A first anneal at a temperature T1 of 200° C. to 270° C. and for a t1 of 0.5 to 15 hours is employed to develop the pinning in the AFM and pinned layers. A second anneal at a temperature T2 of 260° C. to 400° C. where T2>T1 and t1>t2 is used to crystallize the amorphous free layer and complete the pinning. An applied magnetic field of about 8000 Oe is used during both anneal steps. The mechanism for forming a sensor with high MR and robust pinning may involve structural change in the tunnel barrier or at an interface between two of the layers in the spin valve stack. A MgO tunnel barrier and a CoFe/CoB free layer are preferred.

2. 发明授权

US08881376B2 Method of manufacturing a perpendicular magnetic recording head laminated with AFM-FM phase change material 有权
标题翻译：制造用AFM-FM相变材料层叠的垂直磁记录头的方法
公开(公告)号：US08881376B2
公开(公告)日：2014-11-11
申请号：US13199179
申请日：2011-08-22
申请人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
发明人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
IPC分类号： G11B5/127 , G11B5/21 , G11B5/31 , G11B5/147
CPC分类号： G11B5/3113 , G11B5/1278 , G11B5/147 , G11B5/3146 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A method of manufacturing a PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing by including an AFM-FM phase change material spacer that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be formed as a laminated structure by a sputter deposition process wherein a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers are laid down in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content >35 atomic %, and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip.
摘要翻译：公开了一种制造PMR写入器的方法，其在非写入期间使磁极擦除最小化，并且在写入期间使写入场最大化，包括在非写入期间处于AFM状态的AFM-FM相变材料间隔物，并且通过书写过程中加热。包括写极的主极层可以通过溅射沉积工艺形成为层叠结构，其中以交替的方式放置多个“n”个铁磁层和“n-1”个AFM-FM相变材料层。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir），并且还可以用作磁通门以防止磁轭焊剂泄漏到写极点。

3. 发明授权

US08493694B2 Fabrication of a coercivity hard bias using FePt containing film 有权
标题翻译：使用含FePt膜制备高矫顽力硬偏压
公开(公告)号：US08493694B2
公开(公告)日：2013-07-23
申请号：US12927697
申请日：2010-11-22
申请人： Min Zheng , Kunliang Zhang , Min Li
发明人： Min Zheng , Kunliang Zhang , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , H01F10/123 , H01F10/30 , H01F41/302 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1121
摘要： The free layer of a CPP-TMR sensor is biased by laterally disposed hard bias (HB) layers that include a seedlayer structure, a magnetic layer structure of high coercivity material and a capping layer structure. The magnetic layer structure is a layer of FePt-containing material, such as FePtCu, while the seedlayers and capping layers include layers of Cr, CrTi, Fe, FeCo or FeCoMo. These combinations enable the promotion of the L10 phase of the FePt-containing material which provides a high coercivity magnetic layer structure at much lower annealing temperatures than in the prior art.
摘要翻译： CPP-TMR传感器的自由层由横向设置的硬偏置（HB）层偏置，其包括种层结构，高矫顽力材料的磁性层结构和覆盖层结构。磁性层结构是含FePt的材料层，例如FePtCu，而层和覆盖层包括Cr，CrTi，Fe，FeCo或FeCoMo层。这些组合使得能够促进含FePt的材料的L10相，其提供比现有技术低得多的退火温度下的高矫顽磁性层结构。

4. 发明申请

US20130082787A1 Spin injection layer robustness for microwave assisted magnetic recording 有权
标题翻译：微波辅助磁记录的自旋注入层鲁棒性
公开(公告)号：US20130082787A1
公开(公告)日：2013-04-04
申请号：US13200844
申请日：2011-10-03
申请人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
发明人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
IPC分类号： H03B7/00 , C23C14/14 , C23C14/35 , B05D5/00 , B05D3/02
CPC分类号： H03B15/006 , C23C14/025 , C23C14/165 , G11C5/005 , G11C11/161 , Y10T428/1114
摘要： A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.
摘要翻译：具有在自旋注入层（SIL）和场产生层（FGL）之间形成的非磁性间隔物的自旋转移（扭矩）振荡器（STO），以及由Fe（100-V）CoV组成的界面层，其中v 公开了在SIL和非磁性间隔物之间形成的5至100原子％。使用由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层来增强STO器件中的垂直磁各向异性（PMA）。界面层淬灭SIL振荡，从而使SIL稳定于FGL振荡。界面层优选具有5至50埃的厚度，并且增强STO器件中的振幅（dR / R）。 STO设备可能具有顶部SIL或底部SIL配置。 SIL通常是诸如（Co / Ni）X的层压结构，其中x在5和50之间。

5. 发明授权

US08379351B2 Magneto-resistance effect element, and method for manufacturing the same 有权
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：US08379351B2
公开(公告)日：2013-02-19
申请号：US12073895
申请日：2008-03-11
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Kunliang Zhang , Min Li , Michiko Hara , Yoshinari Kurosaki
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Kunliang Zhang , Min Li , Michiko Hara , Yoshinari Kurosaki
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3909 , G11B2005/3996 , H01L43/08 , Y10S977/943
摘要： An example magneto-resistance effect element includes a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; and a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer. A thin film layer is located on a side opposite to the spacer layer relative to the free magnetization layer and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.
摘要翻译：一个示例性磁阻效应元件包括一个固定的磁化层，其磁化强度基本上固定在一个方向上; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 以及间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层，并且位于固定磁化层和自由磁化层之间。薄膜层相对于自由磁化层位于与间隔层相反的一侧，并且包含至少一种选自Si，Mg，B，Al的元素的功能层形成在至少一个的固定磁化层，自由磁化层和薄膜层。

6. 发明申请

US20130001189A1 TMR Device with Novel Free Layer Structure 有权
标题翻译：具有新型自由层结构的TMR器件
公开(公告)号：US20130001189A1
公开(公告)日：2013-01-03
申请号：US13561206
申请日：2012-07-30
申请人： Tong Zhao , Hui Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49034 , Y10T29/49052
摘要： A composite free layer having a FL1/insertion/FL2 configuration where a top surface of FL1 is treated with a weak plasma etch is disclosed for achieving enhanced dR/R while maintaining low RA, and low λ in TMR or GMR sensors. The weak plasma etch removes less than about 0.2 Angstroms of FL1 and is believed to modify surface structure and possibly increase surface energy. FL1 may be CoFe, CoFe/CoFeB, or alloys thereof having a (+) λ value. FL2 may be CoFe, NiFe, or alloys thereof having a (−) λ value. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element. When CoFeBTa is selected as insertion layer, the CoFeB:Ta ratio is from 1:1 to 4:1.
摘要翻译：公开了具有FL1 /插入/ FL2配置的复合自由层，其中用弱等离子体蚀刻处理FL1的顶表面，以实现增强的dR / R，同时保持低的RA和TMR或GMR传感器中的低λ。弱等离子体蚀刻去除了小于约0.2埃的FL1，据信可以改变表面结构并可能增加表面能。 FL1可以是具有（+）λ值的CoFe，CoFe / CoFeB或其合金。 FL2可以是具有（ - ）λ值的CoFe，NiFe或其合金。薄插入层包括至少一种诸如Co，Fe和Ni的磁性元件和至少一种非磁性元件。当选择CoFeBTa作为插入层时，CoFeB：Ta的比例为1:1至4:1。

7. 发明授权

US08203389B1 Field tunable spin torque oscillator for RF signal generation 有权
标题翻译：用于RF信号产生的现场可调自旋转矩振荡器
公开(公告)号：US08203389B1
公开(公告)日：2012-06-19
申请号：US12928194
申请日：2010-12-06
申请人： Yuchen Zhou , Kunliang Zhang , Pokang Wang , Joe Smyth
发明人： Yuchen Zhou , Kunliang Zhang , Pokang Wang , Joe Smyth
IPC分类号： H03L7/26
CPC分类号： H03B15/006
摘要： A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.
摘要翻译：公开了具有包括磁阻层（MRL）/间隔物/磁振荡层（MOL））构造的巨磁阻（GMR）结的自旋转移振荡器（STO）装置，以及包括感测层/结层/参考层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性，而MOL和感测层的Mst（饱和磁化强度×厚度）值彼此在±50％以内。当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时，产生具有一定频率的MOL振荡状态。因此，感测层以类似的RF频率振荡，并且当低密度电流流过MR传感器时，产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。

8. 发明申请

US20120139649A1 FIELD TUNABLE SPIN TORQUE OSCILLATOR FOR RF SIGNAL GENERATION 有权
标题翻译：用于RF信号发生的现场可调旋转扭矩振荡器
公开(公告)号：US20120139649A1
公开(公告)日：2012-06-07
申请号：US12928194
申请日：2010-12-06
申请人： Yuchen Zhou , Kunliang Zhang , Pokang Wang , Joe Smyth
发明人： Yuchen Zhou , Kunliang Zhang , Pokang Wang , Joe Smyth
IPC分类号： H03B28/00
CPC分类号： H03B15/006
摘要： A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.
摘要翻译：公开了具有包括磁阻层（MRL）/间隔物/磁振荡层（MOL））构造的巨磁阻（GMR）结的自旋转移振荡器（STO）装置，以及包括感测层/结层/参考层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性，而MOL和感测层的Mst（饱和磁化强度×厚度）值彼此在±50％以内。当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时，产生具有一定频率的MOL振荡状态。因此，感测层以类似的RF频率振荡，并且当低密度电流流过MR传感器时，产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。

9. 发明申请

US20120126905A1 Assisting FGL oscillations with perpendicular anisotropy for MAMR 有权
公开(公告)号：US20120126905A1
公开(公告)日：2012-05-24
申请号：US12927699
申请日：2010-11-22
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： H03B28/00 , B05D5/00
CPC分类号： H03B15/006 , B82Y40/00 , G11B5/3146 , G11B2005/0024 , G11C11/161 , G11C11/1675 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/306 , H01L43/08 , Y10T29/49034 , Y10T428/11 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1171 , Y10T428/1193
摘要： A spin transfer oscillator (STO) structure is disclosed that includes two assist layers with perpendicular magnetic anisotropy (PMA) to enable a field generation layer (FGL) to achieve an oscillation state at lower current density for MAMR applications. In one embodiment, the STO is formed between a main pole and write shield and the FGL has a synthetic anti-ferromagnetic structure. The STO configuration may be represented by seed layer/spin injection layer (SIL)/spacer/PMA layer 1/FGL/spacer/PMA layer 2/capping layer. The spacer may be Cu for giant magnetoresistive (GMR) devices or a metal oxide for tunneling magnetoresistive (TMR) devices. Alternatively, the FGL is a single ferromagnetic layer and the second PMA assist layer has a synthetic structure including two PMA layers with magnetic moment in opposite directions in a seed layer/SIL/spacer/PMA assist 1/FGL/spacer/PMA assist 2/capping layer configuration. SIL and PMA assist layers are laminates of (CoFe/Ni)x or the like.

10. 发明申请

US20110279921A1 CoFe/Ni Multilayer film with perpendicular anisotropy for microwave assisted magnetic recording 有权
标题翻译： CoFe / Ni多层薄膜，具有垂直各向异性用于微波辅助磁记录
公开(公告)号：US20110279921A1
公开(公告)日：2011-11-17
申请号：US12800196
申请日：2010-05-11
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/02
CPC分类号： G11B5/235 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11B5/1278 , G11B5/3153 , G11B5/33 , G11B5/3909 , G11B5/3967 , G11B2005/0024 , G11B2005/3996 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01F1/0579 , H01F10/325 , H01F10/3254 , H01F10/3259 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/305 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/115
摘要： A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.
摘要翻译：公开了具有种子/ SIL /间隔物/ FGL /覆盖构型的自旋转移振荡器，其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）结构的金属层，以增强垂直磁各向异性（PMA）在叠层（A1 / A2）X层叠自旋注入层（SIL）中。场发生层（FGL）由高Bs材料如FeCo制成。或者，STO具有种子/ FGL /间隔物/ SIL /覆盖配置。 SIL可以包括与（A1 / A2）X层压体交换耦合的FeCo层（x为5至50）以改善坚固性。 FGL可以包括与高Bs层交换耦合的（A1 / A2）Y层叠体（y = 5〜30），以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO可以形成在写入头中的主极和后屏蔽之间。

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