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1. 发明授权

US5296653A Device having a multi-layered conductor structure 失效
标题翻译：具有多层导体结构的装置
公开(公告)号：US5296653A
公开(公告)日：1994-03-22
申请号：US987601
申请日：1992-12-09
申请人： Toshiya Kiyota , Mitsushi Ikeda , Meiko Ogawa , Yoshifumi Ogawa , Michio Murooka
发明人： Toshiya Kiyota , Mitsushi Ikeda , Meiko Ogawa , Yoshifumi Ogawa , Michio Murooka
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , G03G5/10 , H01B5/14 , H01L21/3205 , H01L23/52 , H01L27/146 , H01L29/78 , H01L29/786 , H01S5/042 , H05K1/00
CPC分类号： G03G5/104 , G02F1/136286 , G02F2001/13629 , H01S5/0425
摘要： A multi-layered conductor structure device has a substrate, a first conductor layer formed on the substrate, which provides an electrode or wiring, and an insulating film covering the first conductor layer and the substrate. On the insulating film, a second conductor layer is formed which comprises an indium tin oxide, and which provides an electrode or wiring. The first conductor layer is formed of an alloy of aluminum with copper, gold, boron, bismuth, cobalt, chromium, germanium, iron, molybdenum, niobium, nickel, palladium, platinum, tantalum, titanium, tungsten, and/or silver.
摘要翻译：多层导体结构器件具有衬底，形成在衬底上的第一导体层，其提供电极或布线，以及覆盖第一导体层和衬底的绝缘膜。在绝缘膜上形成包括氧化铟锡的第二导体层，并提供电极或布线。第一导体层由铝与铜，金，硼，铋，钴，铬，锗，铁，钼，铌，镍，钯，铂，钽，钛，钨和/或银的合金形成。

2. 发明授权

US5428250A Line material, electronic device using the line material and liquid crystal display 失效
标题翻译：线材，电子装置采用线材和液晶显示
公开(公告)号：US5428250A
公开(公告)日：1995-06-27
申请号：US095702
申请日：1993-07-22
申请人： Mitsushi Ikeda , Michio Murooka
发明人： Mitsushi Ikeda , Michio Murooka
IPC分类号： G02F1/1362 , H01L23/482 , H01L23/498 , H01L23/48
CPC分类号： H01L23/4825 , G02F1/136286 , H01L23/49866 , G02F1/136213 , G02F2001/13629 , H01L2924/0002
摘要： The line material is of a laminated structure consisting of: a Ta containing N alloy layer (lower layer) which is a first metal layer made of at least an alloy selected from the group consisting of a TaN alloy, a Ta--Mo--N alloy, a Ta--Nb--N alloy and a Ta--W--N alloy; a second metal layer (upper layer) formed integrally with the first metal layer and made of at least an alloy selected from the group consisting of Ta, a Ta--Mo alloy, a Ta--Nb alloy, a Ta--W alloy, a TaN alloy, a Ta--Mo--N alloy, a Ta--Nb--N alloy and a Ta--W--N alloy; and/or a pin hole-free oxide film. The line material of the laminated structure is to be applied to the formation of signal lines and electrodes of, e.g., a liquid crystal display. The line material has a low resistance and the insulating film formed by anodization and the like exhibits excellent insulation and thermal stability. Therefore, when the line material is applied to signal lines of various devices, it exhibits excellent characteristics.
摘要翻译：该线材是由以下组成的叠层结构：含有N合金层（下层）的Ta，该合金层是由至少选自TaN合金，Ta-Mo-N合金，Ta-Nb-N合金和Ta-WN合金; 与第一金属层一体形成并由至少一种选自Ta，Ta-Mo合金，Ta-Nb合金，Ta-W合金，TaN的合金制成的第二金属层（上层）合金，Ta-Mo-N合金，Ta-Nb-N合金和Ta-WN合金; 和/或无针孔的氧化膜。层叠结构的线材应用于例如液晶显示器的信号线和电极的形成。线材具有低电阻，并且通过阳极氧化等形成的绝缘膜显示出优异的绝缘性和热稳定性。因此，当将线材施加到各种装置的信号线时，其表现出优异的特性。

3. 发明授权

US5431773A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5431773A
公开(公告)日：1995-07-11
申请号：US991954
申请日：1992-12-17
申请人： Mitsushi Ikeda , Michio Murooka
发明人： Mitsushi Ikeda , Michio Murooka
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/02 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/49 , H01L29/78 , H01L29/786 , C23F1/00
CPC分类号： H01L29/4908 , G02F1/1362 , H01L21/31122 , H01L28/40 , H01L29/66765 , G02F2001/13629 , H01L27/124
摘要： A method of manufacturing a semiconductor device, which comprises steps of providing a substrate, forming an oxide layer of a metal material, which includes a tantalum or an alloy mainly containing a tantalum on the substrate, placing the substrate into a first chamber, activating an etching gas which includes a fluorine containing gas and an oxygen containing gas, in a second chamber, introducing the activated etching gas into the second chamber, and etching the oxide layer by the introduced gas selectively against the substrate. A method of manufacturing a liquid crystal display device, which comprises steps of providing a substrate, forming an anodic oxide layer of a tantalum containing material on the substrate, forming an etching mask on the anodic oxide layer, placing the substrate into a first region, activating a mixture of fluorine and oxygen containing gas in a second region, apart from the first region, introducing the activated etching gas into the first region through a gas introducing portion, and etching the oxide layer on the substrate selectively against the substrate, by using the etching mask.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在衬底上形成包含钽或主要含有钽的合金的金属材料的氧化物层的衬底，将衬底放置在第一腔室中，激活在第二室中包括含氟气体和含氧气体的蚀刻气体，将活化的蚀刻气体引入到第二室中，并且通过引入的气体选择性地对衬底蚀刻氧化物层。一种制造液晶显示装置的方法，包括以下步骤：在基板上形成含钽材料的阳极氧化层，在阳极氧化层上形成蚀刻掩模，将基板放置在第一区域中，在第一区域的第二区域中激活含氟和含氧气体的混合物，通过气体导入部分将活化的蚀刻气体引入第一区域，并通过使用蚀刻掩模。

4. 发明授权

US5187602A Liquid crystal display apparatus 失效
公开(公告)号：US5187602A
公开(公告)日：1993-02-16
申请号：US727865
申请日：1991-07-10
申请人： Mitsushi Ikeda , Michio Murooka
发明人： Mitsushi Ikeda , Michio Murooka
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： G02F1/136213 , H01L29/42384
摘要： An object is to provide an active matrix type liquid crystal display apparatus with a substrate for a liquid crystal driving semiconductor device which is free from point defects, rise of production costs, and shortcircuit in a storage capacitance portion. The liquid crystal display apparatus has a substrate for a liquid crystal driving semiconductor device with a display picture element group consisting of driving semiconductor devices 15 and storage capacitances, the display picture element group being disposed on one major surface of a transparent substrate 13, wherein the storage capacitance is formed by disposing an anodic oxide film 18 between a display electrode 16 and a storage capacitance metallic line 1b made of TaN, for example, and disposed on the one major surface of the transparent substrate 13.

5. 发明授权

US5264728A Line material, electronic device using the line material and liquid crystal display 失效
标题翻译：线材，电子装置采用线材和液晶显示
公开(公告)号：US5264728A
公开(公告)日：1993-11-23
申请号：US620209
申请日：1990-11-30
申请人： Mitsushi Ikeda , Michio Murooka
发明人： Mitsushi Ikeda , Michio Murooka
IPC分类号： G02F1/1362 , H01L23/482 , H01L23/498 , H01L23/48
CPC分类号： H01L23/4825 , G02F1/136286 , H01L23/49866 , G02F1/136213 , G02F2001/13629 , H01L2924/0002
摘要： The line material is of a laminated structure consisting of: a Ta containing N alloy layer (lower layer) which is a first metal layer made of at least an alloy selected from the group consisting of a TaN alloy, a Ta-Mo-N alloy, a Ta-Nb-N alloy and a Ta-W-N alloy; a second metal layer (upper layer) formed integrally with the first metal layer and made of at least an alloy selected from the group consisting of Ta, a Ta-Mo alloy, a Ta-Nb alloy, a Ta-W alloy, a TaN alloy, a Ta-Mo-N alloy, a Ta-Nb-N alloy and a Ta-W-N alloy; and/or a pin hole-free oxide film. The line material of the laminated structure is to be applied to the formation of signal lines and electrodes of, e.g., a liquid crystal display. The line material has a low resistance and the insulating film formed by anodization and the like exhibits excellent insulation and thermal stability. Therefore, when the line material is applied to signal lines of various devices, it exhibits excellent characteristics.

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