专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110241101A1 SEMICONDUCTOR MEMORY ELEMENT AND SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器元件和半导体存储器件
公开(公告)号：US20110241101A1
公开(公告)日：2011-10-06
申请号：US12880748
申请日：2010-09-13
申请人： Tsunehiro INO , Daisuke MATSUSHITA , Yasushi NAKASAKI , Masao SHINGU
发明人： Tsunehiro INO , Daisuke MATSUSHITA , Yasushi NAKASAKI , Masao SHINGU
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , B82Y10/00 , B82Y30/00 , H01L27/11578 , H01L27/11582 , H01L29/42348 , H01L29/7923 , H01L29/7926
摘要： According to one embodiment, a semiconductor memory element includes a semiconductor layer, a tunnel insulator provided on the semiconductor layer, a charge accumulation film provided on the tunnel insulator having a film thickness of 0.9 nm or more and 2.8 nm or less and the charge accumulation film containing cubic HfO2 particles, a block insulator provided on the charge accumulation film, and a control electrode provided on the block insulator.
摘要翻译：根据一个实施例，半导体存储元件包括半导体层，设置在半导体层上的隧道绝缘体，设置在隧道绝缘体上的电荷累积膜，其膜厚度为0.9nm以上且2.8nm以下，电荷积累含有立方HfO 2颗粒的膜，设置在电荷累积膜上的块绝缘体，以及设置在块绝缘体上的控制电极。

2. 发明申请

US20120108078A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120108078A1
公开(公告)日：2012-05-03
申请号：US13348772
申请日：2012-01-12
申请人： Tsunehiro INO , Yasushi NAKASAKI
发明人： Tsunehiro INO , Yasushi NAKASAKI
IPC分类号： H01L21/31
CPC分类号： H01L21/31604 , C23C14/08 , C23C14/5806 , C23C14/5853 , H01L21/02148 , H01L21/02159 , H01L21/02161 , H01L21/02266 , H01L21/02337 , H01L21/02356 , H01L21/28194 , H01L21/31608 , H01L21/31641 , H01L21/31645 , H01L27/115 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L29/40117 , H01L29/513 , H01L29/517 , H01L29/7881 , H01L29/792
摘要： It is made possible to provide a semiconductor device and a method for manufacturing the semiconductor device that have the highest possible permittivity and can be produced at low production costs. A method for manufacturing a semiconductor device, includes: forming an amorphous film containing (HfzZr1−z)xSi1−xO2−y (0.81≦x≦0.99, 0.04≦y≦0.25, 0≦z≦1) on a semiconductor substrate, the ranges of composition ratios x, y, and z being values measured by XPS; and transforming the amorphous film into an insulating film containing (HfzZr1−z)xSi1−xO2 as tetragonal crystals, by performing annealing at 750° C. or higher on the amorphous film in an atmosphere containing oxygen.
摘要翻译：可以提供具有最高可能的介电常数并且可以以低生产成本制造的半导体器件的半导体器件和制造方法。一种半导体器件的制造方法，其特征在于，在半导体衬底上形成含有（Hf z Zr 1-z）x Si 1-x O 2-y（0.81≤n1E; x＆nlE; 0.99,0.04＆nlE; y＆nlE; 0.25,0＆nlE; z＆nlE; 1），组成比x，y和z的范围是通过XPS测量的值; 并通过在含有氧气的气氛中在非晶膜上进行750℃以上的退火，将非晶质膜变形为含有（Hf z Zr 1-z）x Si 1-x O 2的四方晶体的绝缘膜。

3. 发明申请

US20080116507A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20080116507A1
公开(公告)日：2008-05-22
申请号：US11857722
申请日：2007-09-19
申请人： Tsunehiro INO , Kouichi Muraoka
发明人： Tsunehiro INO , Kouichi Muraoka
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L29/513 , H01L29/792
摘要： A nonvolatile semiconductor memory device includes: a source region and a drain region formed at a distance from each other in a semiconductor substrate; a tunnel insulating film formed on the semiconductor substrate between the source region and the drain region; a charge storage film formed on the tunnel insulating film; a first alumina layer formed on the charge storage film, and having a first impurity element added thereto, the first impurity element having an octacoordinate ion radius of 63 pm or greater, the first impurity element having a concentration distribution in a layer thickness direction of the first alumina layer that becomes the largest in a region close to the side of the charge storage film; a second alumina layer formed on the first alumina layer, and not having the first impurity element added thereto; and a control gate electrode formed on the second alumina layer.
摘要翻译：非易失性半导体存储器件包括：在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 在所述源极区域和所述漏极区域之间形成在所述半导体衬底上的隧道绝缘膜; 形成在隧道绝缘膜上的电荷存储膜; 形成在所述电荷存储膜上的第一氧化铝层，并且具有添加了第一杂质元素的第一杂质元素，所述第一杂质元素的八面体离子半径为63μm以上，所述第一杂质元素具有层厚度方向的浓度分布在靠近电荷存储膜的一侧的区域中成为最大的第一氧化铝层; 形成在第一氧化铝层上的第二氧化铝层，并且不具有添加第一杂质元素的第二氧化铝层; 以及形成在第二氧化铝层上的控制栅电极。

4. 发明申请

US20090057753A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20090057753A1
公开(公告)日：2009-03-05
申请号：US12193251
申请日：2008-08-18
申请人： Tsunehiro INO
发明人： Tsunehiro INO
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L21/28282 , H01L27/11568 , H01L29/513
摘要： A nonvolatile semiconductor memory device includes a source region and a drain region spaced from each other in a surface of a semiconductor layer, a tunnel insulating film provided on the semiconductor layer between the source region and the drain region, a charge storage film provided on the tunnel insulating film, a block insulating film provided on the charge storage film, and a control gate electrode provided on the block insulating film. The block insulating film is made of (Rm1−xLnx)2−yAlyO3+δ, where Ln is one or more selected from Pr, Tb, Ce, Yb, Eu, and Sm, Rm is one or more selected from La, Nd, Gd, Dy, Ho, Er, Tm, Lu, Y, and Sc, 0
摘要翻译：非易失性半导体存储器件包括在半导体层的表面中彼此间隔开的源极区域和漏极区域，设置在源极区域和漏极区域之间的半导体层上的隧道绝缘膜，设置在源极区域和漏极区域之间的电荷存储膜隧道绝缘膜，设置在电荷存储膜上的块绝缘膜，以及设置在块绝缘膜上的控制栅电极。块绝缘膜由（Rm1-xLnx）2-yAlyO3 + delta制成，其中Ln是选自Pr，Tb，Ce，Yb，Eu和Sm中的一种或多种，Rm是选自La，Nd， Gd，Dy，Ho，Er，Tm，Lu，Y和Sc，0

5. 发明申请

US20130234130A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20130234130A1
公开(公告)日：2013-09-12
申请号：US13727027
申请日：2012-12-26
申请人： Tsunehiro INO
发明人： Tsunehiro INO
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , B82Y10/00 , H01L27/1157 , H01L27/11582 , H01L29/42332 , H01L29/42348 , H01L29/513 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/7889 , H01L29/7926 , Y10S977/943
摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a first insulating film formed on the semiconductor layer; a charge storage film that is formed on the first insulating film, includes C60 fullerenes, and is not less than 0.5 monolayer but is less than 1.0 monolayer; a second insulating film formed on the charge storage film; and a control electrode formed on the second insulating film.
摘要翻译：实施例的非易失性半导体存储器件包括：半导体层; 形成在所述半导体层上的第一绝缘膜; 形成在第一绝缘膜上的电荷存储膜包括C60富勒烯，不小于0.5单层，但小于1.0单层; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制电极。

6. 发明申请

US20090212346A1 SEMICONDUCTOR MEMORY ELEMENT 有权
标题翻译：半导体存储元件
公开(公告)号：US20090212346A1
公开(公告)日：2009-08-27
申请号：US12233073
申请日：2008-09-18
申请人： Tsunehiro INO , Naoki Yasuda , Koichi Muraoka , Jun Fujiki , Shoko Kikuchi , Keiko Ariyoshi
发明人： Tsunehiro INO , Naoki Yasuda , Koichi Muraoka , Jun Fujiki , Shoko Kikuchi , Keiko Ariyoshi
IPC分类号： H01L47/00
CPC分类号： H01L29/792 , H01L29/42348 , H01L29/513 , H01L29/518
摘要： A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film.
摘要翻译：半导体存储元件包括：形成在半导体衬底上的隧道绝缘膜; 在隧道绝缘膜上形成具有Bevan簇的HfON电荷存储膜; 形成在HfON电荷存储膜上的阻挡膜; 以及形成在阻挡膜上的栅电极。

7. 发明申请

US20110284365A1 LANTHANOID ALUMINATE FILM FABRICATION METHOD 有权
标题翻译：兰蔻酸铝薄膜制造方法
公开(公告)号：US20110284365A1
公开(公告)日：2011-11-24
申请号：US13192687
申请日：2011-07-28
申请人： Tsunehiro INO , Akira Takashima
发明人： Tsunehiro INO , Akira Takashima
IPC分类号： C23C14/34
CPC分类号： C23C14/3464 , C23C14/08
摘要： A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.
摘要翻译：公开了一种通过共溅射沉积制造具有增强的电绝缘性的镧系铝酸盐膜的方法，这是因为抑制了膜的组成偏差。首先在真空室内保持两个独立的靶，其中一个靶由铝酸镧（LnAlO3）制成，另一个由氧化铝（Al2O3）制成。然后，将基板输送并加载到真空室中。接下来，将选择的溅射气体引入该室。此后，一次进行两个靶的溅射，从而在基板表面上形成镧系铝酸盐膜。该薄膜适用于高度小型化的金属氧化物半导体（MOS）晶体管中的超薄高介电常数（高k）栅极电介质。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式