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1. 发明授权

US08008147B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08008147B2
公开(公告)日：2011-08-30
申请号：US12320278
申请日：2009-01-22
申请人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
发明人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
IPC分类号： H01L21/8238
CPC分类号： H01L27/11521 , H01L21/28194 , H01L21/28202 , H01L29/4933 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.
摘要翻译：可以尽可能地防止器件特性的劣化。半导体器件包括：半导体衬底; 栅极绝缘膜，设置在所述半导体衬底的上方并且含有金属，氧和添加元素; 设置在所述栅极绝缘膜上方的栅电极; 以及设置在栅电极两侧的半导体衬底中的源/漏区。添加元素是选自浓度为0.003原子％以上且3原子％以下的第5,6,15和16族元素中的至少一种元素。

2. 发明授权

US07834408B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07834408B2
公开(公告)日：2010-11-16
申请号：US12320279
申请日：2009-01-22
申请人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
发明人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
IPC分类号： H01L29/76
CPC分类号： H01L27/11521 , H01L21/28194 , H01L21/28202 , H01L29/4933 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.
摘要翻译：可以尽可能地防止器件特性的劣化。半导体器件包括：半导体衬底; 栅极绝缘膜，设置在所述半导体衬底的上方并且含有金属，氧和添加元素; 设置在所述栅极绝缘膜上方的栅电极; 以及设置在栅电极两侧的半导体衬底中的源/漏区。添加元素是选自浓度为0.003原子％以上且3原子％以下的第5,6,15和16族元素中的至少一种元素。

3. 发明申请

US20080116507A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20080116507A1
公开(公告)日：2008-05-22
申请号：US11857722
申请日：2007-09-19
申请人： Tsunehiro INO , Kouichi Muraoka
发明人： Tsunehiro INO , Kouichi Muraoka
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L29/513 , H01L29/792
摘要： A nonvolatile semiconductor memory device includes: a source region and a drain region formed at a distance from each other in a semiconductor substrate; a tunnel insulating film formed on the semiconductor substrate between the source region and the drain region; a charge storage film formed on the tunnel insulating film; a first alumina layer formed on the charge storage film, and having a first impurity element added thereto, the first impurity element having an octacoordinate ion radius of 63 pm or greater, the first impurity element having a concentration distribution in a layer thickness direction of the first alumina layer that becomes the largest in a region close to the side of the charge storage film; a second alumina layer formed on the first alumina layer, and not having the first impurity element added thereto; and a control gate electrode formed on the second alumina layer.
摘要翻译：非易失性半导体存储器件包括：在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 在所述源极区域和所述漏极区域之间形成在所述半导体衬底上的隧道绝缘膜; 形成在隧道绝缘膜上的电荷存储膜; 形成在所述电荷存储膜上的第一氧化铝层，并且具有添加了第一杂质元素的第一杂质元素，所述第一杂质元素的八面体离子半径为63μm以上，所述第一杂质元素具有层厚度方向的浓度分布在靠近电荷存储膜的一侧的区域中成为最大的第一氧化铝层; 形成在第一氧化铝层上的第二氧化铝层，并且不具有添加第一杂质元素的第二氧化铝层; 以及形成在第二氧化铝层上的控制栅电极。

4. 发明授权

US07075158B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07075158B2
公开(公告)日：2006-07-11
申请号：US11244295
申请日：2005-10-06
申请人： Masato Koyama , Akira Nishiyama , Masamichi Suzuki , Yuuichi Kamimuta , Tsunehiro Ino
发明人： Masato Koyama , Akira Nishiyama , Masamichi Suzuki , Yuuichi Kamimuta , Tsunehiro Ino
IPC分类号： H01L29/76
CPC分类号： H01L21/823814 , H01L21/28097 , H01L21/823835 , H01L29/4975 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized, and source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.
摘要翻译：可以制造具有低电阻的半导体器件，其器件特性不变化。半导体器件包括硅层，形成在硅层上的栅极电介质膜，形成在栅极电介质膜上的栅电极，并且包括部分结晶的氮化金属硅化物层，以及形成在栅电极两侧的硅层。

5. 发明申请

US20050142769A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050142769A1
公开(公告)日：2005-06-30
申请号：US11011044
申请日：2004-12-15
申请人： Yoshiki Kamata , Akira Nishiyama , Tsunehiro Ino , Yuuichi Kamimuta , Masahiro Koike
发明人： Yoshiki Kamata , Akira Nishiyama , Tsunehiro Ino , Yuuichi Kamimuta , Masahiro Koike
IPC分类号： H01L21/20 , H01L21/28 , H01L21/283 , H01L21/31 , H01L21/316 , H01L21/3205 , H01L21/336 , H01L21/469 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , H01L29/40114 , H01L29/513
摘要： Disclosed is a semiconductor device comprising a Ge semiconductor area, and an insulating film area, formed in direct contact with the Ge semiconductor area, containing metal, germanium, and oxygen.
摘要翻译：公开了一种半导体器件，其包括与包含金属，锗和氧的Ge半导体区域直接接触形成的Ge半导体区域和绝缘膜区域。

6. 发明授权

US08866139B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08866139B2
公开(公告)日：2014-10-21
申请号：US13727027
申请日：2012-12-26
申请人： Tsunehiro Ino
发明人： Tsunehiro Ino
IPC分类号： H01L29/792 , H01L29/788 , H01L29/51 , H01L29/423 , H01L29/66 , B82Y10/00
CPC分类号： H01L29/792 , B82Y10/00 , H01L27/1157 , H01L27/11582 , H01L29/42332 , H01L29/42348 , H01L29/513 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/7889 , H01L29/7926 , Y10S977/943
摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a first insulating film formed on the semiconductor layer; a charge storage film that is formed on the first insulating film, includes C60 fullerenes, and is not less than 0.5 monolayer but is less than 1.0 monolayer; a second insulating film formed on the charge storage film; and a control electrode formed on the second insulating film.
摘要翻译：实施例的非易失性半导体存储器件包括：半导体层; 形成在所述半导体层上的第一绝缘膜; 形成在第一绝缘膜上的电荷存储膜包括C60富勒烯，不小于0.5单层，但小于1.0单层; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制电极。

7. 发明申请

US20110284365A1 LANTHANOID ALUMINATE FILM FABRICATION METHOD 有权
标题翻译：兰蔻酸铝薄膜制造方法
公开(公告)号：US20110284365A1
公开(公告)日：2011-11-24
申请号：US13192687
申请日：2011-07-28
申请人： Tsunehiro INO , Akira Takashima
发明人： Tsunehiro INO , Akira Takashima
IPC分类号： C23C14/34
CPC分类号： C23C14/3464 , C23C14/08
摘要： A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.
摘要翻译：公开了一种通过共溅射沉积制造具有增强的电绝缘性的镧系铝酸盐膜的方法，这是因为抑制了膜的组成偏差。首先在真空室内保持两个独立的靶，其中一个靶由铝酸镧（LnAlO3）制成，另一个由氧化铝（Al2O3）制成。然后，将基板输送并加载到真空室中。接下来，将选择的溅射气体引入该室。此后，一次进行两个靶的溅射，从而在基板表面上形成镧系铝酸盐膜。该薄膜适用于高度小型化的金属氧化物半导体（MOS）晶体管中的超薄高介电常数（高k）栅极电介质。

8. 发明授权

US07795121B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07795121B2
公开(公告)日：2010-09-14
申请号：US12010937
申请日：2008-01-31
申请人： Tsunehiro Ino , Akio Kaneko , Nobutoshi Aoki
发明人： Tsunehiro Ino , Akio Kaneko , Nobutoshi Aoki
IPC分类号： H01L21/265
CPC分类号： H01L21/28202 , H01L21/268 , H01L21/2686 , H01L21/28035 , H01L21/2807 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L29/511 , H01L29/517
摘要： A method for manufacturing a semiconductor device is provided, which includes forming a gate insulating film on a semiconductor substrate, forming a first layer on the gate insulating film, the first layer containing a first p-type impurity and, an amorphous or polycrystalline formed of Si1-xGex (0≦x
摘要翻译：提供一种制造半导体器件的方法，其包括在半导体衬底上形成栅极绝缘膜，在栅极绝缘膜上形成第一层，第一层包含第一p型杂质，以及由 Si1-xGex（0＆nlE; x <0.25），对第一层进行第一热处理，其中第一层在高于1100℃的温度下加热1毫秒以下，在第一层上形成第二层，所述第二层包含第二p型杂质并由非晶硅或多晶硅形成，所述第二p型杂质的共价键半径小于所述第一p型杂质，并且使所述第二层经受第二加热处理以在800℃至1100℃的温度下加热第二层。

9. 发明申请

US20100078704A1 SEMICONDUCTOR STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体存储元件及其制造方法
公开(公告)号：US20100078704A1
公开(公告)日：2010-04-01
申请号：US12404648
申请日：2009-03-16
申请人： Tsunehiro Ino , Shosuke Fujii , Jun Fujiki , Akira Takashima , Masao Shingu , Daisuke Matsushita , Naoki Yasuda , Koichi Muraoka
发明人： Tsunehiro Ino , Shosuke Fujii , Jun Fujiki , Akira Takashima , Masao Shingu , Daisuke Matsushita , Naoki Yasuda , Koichi Muraoka
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L29/517 , H01L29/66833
摘要： A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.
摘要翻译：半导体存储元件包括：设置在半导体衬底中的源极区域和漏极区域; 设置在所述源极区域和所述漏极区域之间的所述半导体衬底上的隧道绝缘膜; 设置在所述隧道绝缘膜上的电荷存储膜; 设置在电荷存储膜上的块状绝缘膜; 设置在所述块绝缘膜上的栅电极; 以及包含气体分子的区域，所述区域设置在电荷存储膜和块绝缘膜之间的界面附近。

10. 发明授权

US07646072B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US07646072B2
公开(公告)日：2010-01-12
申请号：US12320280
申请日：2009-01-22
申请人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
发明人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
IPC分类号： H01L29/78
CPC分类号： H01L27/11521 , H01L21/28194 , H01L21/28202 , H01L29/4933 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.

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