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1. 发明申请

US20190252230A1 PLASMA RESISTANT ELECTROSTATIC CLAMP 审中-公开
公开(公告)号：US20190252230A1
公开(公告)日：2019-08-15
申请号：US16397324
申请日：2019-04-29
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Dale K. Stone , Julian G. Blake , Lyudmila Stone
IPC分类号： H01L21/683 , H01J37/32 , H01L21/67
CPC分类号： H01L21/6831 , H01J37/32715 , H01L21/67109
摘要： An apparatus to support a substrate may include a base and an insulator portion adjacent to the base and configured to support a surface of the substrate. The apparatus may also include an electrode system to apply a clamping voltage to the substrate, wherein the insulator portion is configured to provide a gas to the substrate through at least one channel that has a channel width, wherein a product of the gas pressure and channel width is less than a Paschen minimum for the gas, where the Paschen minimum is a product of pressure and separation of surfaces of an enclosure at which a breakdown voltage of the gas is a minimum.

2. 发明申请

US20140318455A1 LOW EMISSIVITY ELECTROSTATIC CHUCK 审中-公开
标题翻译：低电感静电卡盘
公开(公告)号：US20140318455A1
公开(公告)日：2014-10-30
申请号：US13871273
申请日：2013-04-26
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： Julian G. Blake , Dale K. Stone , Lyudmila Stone , Michael Schrameyer
IPC分类号： H01L21/683
CPC分类号： H01L21/6831
摘要： An electrostatic chuck includes a heater and an electrode disposed on the heater. The electrostatic chuck also includes an insulator layer and coating disposed on the insulator, where the coating is configured to support an electrostatic field generated by the electrode system to attract a substrate thereto.
摘要翻译：静电卡盘包括加热器和设置在加热器上的电极。静电卡盘还包括设置在绝缘体上的绝缘体层和涂层，其中涂层被配置为支撑由电极系统产生的静电场以吸引衬底。

3. 发明授权

US09728430B2 Electrostatic chuck with LED heating 有权
公开(公告)号：US09728430B2
公开(公告)日：2017-08-08
申请号：US14753870
申请日：2015-06-29
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Jason M. Schaller , William T. Weaver , Morgan D. Evans , Robert Brent Vopat , Paul E. Pergande , Julian G. Blake , David Blahnik , Ala Moradian
IPC分类号： H01L21/683 , H01T23/00 , H01L21/67
CPC分类号： H01L21/67115 , H01L21/67109 , H01L21/6831
摘要： An electrostatic chuck with LED heating is disclosed. The electrostatic chuck with LED heating comprises a first subassembly, which comprises a LED heater, and a second subassembly, which comprises an electrostatic chuck. The LED substrate heater subassembly includes a base having a recessed portion. A plurality of light emitting diodes (LEDs) is disposed within the recessed portion. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The second subassembly, which comprises an electrostatic chuck, is disposed on the LED substrate heater subassembly. The electrostatic chuck includes a top dielectric layer and an interior layer that are transparent at the wavelength emitted by the LEDs. One or more electrodes are disposed between the top dielectric layer and the interior layer to create the electrostatic force.

4. 发明申请

US20160141191A1 Control Of Workpiece Temperature Via Backside Gas Flow 有权
标题翻译：通过背面气流控制工件温度
公开(公告)号：US20160141191A1
公开(公告)日：2016-05-19
申请号：US14548183
申请日：2014-11-19
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Julian G. Blake
IPC分类号： H01L21/67 , H01L21/683 , G05D23/19 , G05D27/02 , G05B19/418 , G05D7/06
CPC分类号： H01L21/67248 , G05B19/418 , G05B2219/31001 , G05B2219/45031 , H01L21/67109
摘要： A system and method for modulating and controlling the localized temperature of a workpiece during processing is disclosed. The system uses a platen having one or more walls, defining a plurality of discrete regions on the top surface of the platen. When a workpiece is disposed on the platen, a plurality of compartments is created, where each compartment is defined by the back side of the workpiece and a respective region of the platen. The pressure of back side gas in each of the compartments can be individually controlled. The pressure of back side gas determines the amount of heat that is transferred from the workpiece to the platen. By locally regulating the pressure of back side gas, different regions of the workpiece can be maintained at different temperatures. In some embodiments, a plurality of valves is used to control the flow rate to the compartments.
摘要翻译：公开了一种用于在加工期间调制和控制工件的局部温度的系统和方法。该系统使用具有一个或多个壁的压板，在压板的顶表面上限定多个离散区域。当工件设置在压板上时，产生多个隔室，其中每个隔室由工件的背面和压板的相应区域限定。每个隔室中的背侧气体的压力可以单独控制。背面气体的压力决定了从工件传递到压板的热量。通过局部调节背面气体的压力，可以将不同的工件区域保持在不同的温度。在一些实施例中，使用多个阀来控制到隔室的流量。

5. 发明授权

US08592786B2 Platen clamping surface monitoring 有权
标题翻译：压板表面监控
公开(公告)号：US08592786B2
公开(公告)日：2013-11-26
申请号：US13832073
申请日：2013-03-15
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： David E. Suuronen , Julian G. Blake , Kurt Decker-Lucke , James Carroll , Klaus Petry
IPC分类号： H01J37/317 , H01L21/265 , G01F23/00
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/0225 , H01J2237/2007
摘要： An ion implanter includes a platen having a clamping surface configured to support a wafer for treatment with ions, the platen also having at least one pair of electrodes under the clamping surface, a clamping power supply configured to provide an AC signal to the at least one pair of electrodes and a sensed signal representative of the AC signal, and a controller. The controller is configured to receive the sensed signal from the clamping power supply when no wafer is clamped to the clamping surface. The controller is further configured to monitor the sensed signal and determine if the sensed signal is representative of deposits on the clamping surface exceeding a predetermined deposit threshold.
摘要翻译：离子注入机包括压板，该压板具有被配置为支撑用于用离子处理的晶片的夹紧表面，所述压板在夹持表面下方还具有至少一对电极;钳位电源，被配置为向所述至少一个一对电极和表示AC信号的感测信号，以及控制器。控制器被配置为当没有晶片被夹持到夹紧表面时从钳位电源接收感测到的信号。控制器还被配置为监视感测到的信号，并确定感测到的信号是否代表夹持表面上的沉积超过预定的沉积阈值。

6. 发明授权

US10825645B2 System and method for reduced workpiece adhesion due to electrostatic charge during removal from a processing station 有权
公开(公告)号：US10825645B2
公开(公告)日：2020-11-03
申请号：US16057260
申请日：2018-08-07
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Eric D. Wilson , David E. Suuronen , Michael W. Osborne , Julian G. Blake
IPC分类号： H01J37/20 , H01J37/317 , H01L21/683 , G01R29/12 , H01L21/67 , G01R31/28 , G01R29/24
摘要： A system and method for reduced workpiece adhesion during removal from a semiconductor processing station. The system provides an electrostatic charge detector that measures the residual charge on an electrostatically clamped workpiece prior to removal from a processing station inside the semiconductor processing tool. One embodiment uses an algorithm that to predict when to remove the workpiece without electrostatic adhesion based upon the decay rate of the residual electrostatic charge (Q) on the workpiece. Other embodiments also provide for a processing station static charge buildup health check and an excessive static charge check on incoming workpieces.

7. 发明申请

US20190057835A1 System And Method For Reduced Workpiece Adhesion Due To Electrostatic Charge During Removal From A Processing Station 审中-公开
公开(公告)号：US20190057835A1
公开(公告)日：2019-02-21
申请号：US16057260
申请日：2018-08-07
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Eric D. Wilson , David E. Suuronen , Michael W. Osborne , Julian G. Blake
IPC分类号： H01J37/20 , H01J37/317 , H01L21/683 , G01R29/12
摘要： A system and method for reduced workpiece adhesion during removal from a semiconductor processing station. The system provides an electrostatic charge detector that measures the residual charge on an electrostatically clamped workpiece prior to removal from a processing station inside the semiconductor processing tool. One embodiment uses an algorithm that to predict when to remove the workpiece without electrostatic adhesion based upon the decay rate of the residual electrostatic charge (Q) on the workpiece. Other embodiments also provide for a processing station static charge buildup health check and an excessive static charge check on incoming workpieces.

8. 发明授权

US10385454B2 Diffusion resistant electrostatic clamp 有权
公开(公告)号：US10385454B2
公开(公告)日：2019-08-20
申请号：US15448838
申请日：2017-03-03
申请人： Varian Semiconductor Equipment Associates, Inc. , Entegris, Inc.
发明人： Dale K. Stone , Richard Cooke , I-Kuan Lin , Julian G. Blake , Lyudmila Stone
IPC分类号： C23C16/50 , H01L21/683 , H02N13/00 , C23C28/04
摘要： In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).

9. 发明申请

US20170335460A1 DIFFUSION RESISTANT ELECTROSTATIC CLAMP 审中-公开
公开(公告)号：US20170335460A1
公开(公告)日：2017-11-23
申请号：US15448838
申请日：2017-03-03
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Dale K. Stone , Richard Cooke , I-Kuan Lin , Julian G. Blake , Lyudmila Stone
IPC分类号： C23C16/50 , C23C28/04 , H01L21/683 , H02N13/00
CPC分类号： C23C16/50 , C23C28/042 , C23C28/044 , H01L21/6831 , H02N13/00
摘要： In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).

10. 发明申请

US20170207063A1 METHOD FOR IMPLANTATION OF SEMICONDUCTOR WAFERS HAVING HIGH BULK RESISTIVITY 有权
公开(公告)号：US20170207063A1
公开(公告)日：2017-07-20
申请号：US15131520
申请日：2016-04-18
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Michael W. Osborne , David E. Suuronen , Julian G. Blake
IPC分类号： H01J37/304 , H01L21/66 , H01J37/317 , H01L21/265
CPC分类号： H01J37/304 , H01J37/026 , H01J37/20 , H01J37/3171 , H01J2237/2007 , H01J2237/30405 , H01J2237/31703 , H01L21/265 , H01L22/14 , H01L22/20
摘要： An ion implanter may include an electrostatic clamp to hold a substrate; a plasma flood gun generating a flux of electrons impinging upon the substrate; and a controller coupled to the plasma flood gun and including a component generating a control signal responsive to a measurement signal, the control signal to adjust operation of the plasma flood gun to a target operating level. At the target operating level the flux of electrons may comprise a stabilizing dose of electrons, the stabilizing concentration of electrons, the stabilizing concentration reducing a clamp current variation in the electrostatic clamp to a target value, the target value being less than a second value of clamp current variation when the plasma flood gun is not operating.

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