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    • 5. 发明申请
    • CLEANING AGENT FOR METAL WIRING SUBSTRATE, AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE
    • 用于金属接线衬底的清洁剂,以及用于清洁半导体衬底的方法
    • US20160060584A1
    • 2016-03-03
    • US14783318
    • 2014-04-09
    • Wako Pure Chemical Industries, Ltd.
    • Hironori MizutaTsutomu WatahikiTsuneaki Maesawa
    • C11D11/00H01L21/02C11D7/32
    • C11D11/0047C11D7/3209C11D7/3218C11D7/3281H01L21/02074
    • It is a subject of the present invention to provide a cleaning agent for a substrate having a metal wiring, and a cleaning method for a semiconductor substrate comprising that the cleaning agent is used, by which following effects (1) to (5) are obtained, in a cleaning process after chemical mechanical polishing (CMP) in a manufacturing process of a semiconductor device. (1) Residues of fine particles (polishing agents) used in the CMP process, fine particles (metal particles) derived from a polished metal, an anticorrosive, and the like, can be removed sufficiently. (2) A coating film (protective film: oxidation resistant film) on a surface of the metal wiring, containing a complex between an anticorrosive, such as benzotriazole or quinaldic acid, and a surface metal of the metal wiring, formed in the CMP process, can be removed (stripped) sufficiently. (3) An oxide film containing a metal oxide can be formed after removal (stripping) of the coating film. (4) A semiconductor substrate can be obtained stably for a long period of time, without impairing flatness of the surface of the metal wiring (the surface of the oxide film containing the metal oxide), even leaving a substrate after the cleaning process after the CMP. (5) It is hard to deteriorate even after using the cleaning agent for a long period of time.The present invention relates to a cleaning agent for a substrate having a metal wiring, comprising an aqueous solution containing (A) carboxylic acid having a nitrogen-containing heterocyclic ring and (B) alkylhydroxylamine, and having a pH of 10 or higher, as well as a cleaning method for a semiconductor substrate, comprising that the cleaning agent is used.
    • 本发明的主题是提供一种具有金属布线的基板用清洗剂和包括使用清洗剂的半导体基板的清洗方法,通过该清洗剂得到以下效果(1)〜(5) ,在半导体器件的制造过程中的化学机械抛光(CMP)之后的清洁过程中。 (1)CMP工艺中使用的微粒(抛光剂)残留物,由抛光金属衍生的细小颗粒(金属颗粒),防腐蚀剂等的残留物可被充分除去。 (2)在CMP工序中形成的在金属配线的表面上含有防腐蚀剂如苯并三唑或喹哪啶酸之间的复合物和金属配线的表面金属的涂膜(保护膜:抗氧化膜) ,可以充分去除(剥离)。 (3)除去(剥离)涂膜后,可以形成含有金属氧化物的氧化膜。 (4)半导体衬底可以长时间稳定地获得,而不会损害金属布线表面(含有金属氧化物的氧化物膜的表面)的平整度,甚至在清洁工艺之后离开衬底 CMP。 (5)即使长时间使用清洁剂,也难以劣化。 本发明涉及一种具有金属配线的基板用清洗剂,其含有含有(A)含有氮杂环的羧酸的水溶液和(B)烷基羟胺,pH值在10以上。 作为半导体衬底的清洁方法,包括使用清洁剂。