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1. 发明申请

US20120155169A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE 审中-公开
标题翻译：非易失性半导体存储器件
公开(公告)号：US20120155169A1
公开(公告)日：2012-06-21
申请号：US13364496
申请日：2012-02-02
申请人： Yasuhiko Honda , Takahiro Suzuki , Masao Iwamoto , Kiyochika Kinjo
发明人： Yasuhiko Honda , Takahiro Suzuki , Masao Iwamoto , Kiyochika Kinjo
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C11/5628 , G11C29/00
摘要： A nonvolatile semiconductor storage device storing plural data bits in one memory cell by assigning multivalued data having a higher-order bit selected from one of a pair of data in a first unit and a lower-order bit selected from the other of the pair of data. In a first write operation processing data in the first unit, logic of one of the higher-order and the lower-order bit is fixed, and two multivalued data that maximize the difference between the threshold voltages are assigned, thereby storing one bit of input data in the memory cell in a pseudo binary state. In a second write operation processing data in a second unit larger than the first unit, plural input data bits in a multivalued state and parity data for error correction in the second unit are stored in the memory cell.
摘要翻译：一种非易失性半导体存储装置，其通过分配从第一单位中的一对数据中选择的高阶位和从所述一对数据中的另一个中选择的低位位选择多位数据来存储多个数据位在一个存储单元中。在第一单元中处理数据的第一写入操作中，高阶和低位中的一个的逻辑是固定的，并且分配两个阈值电压之间的差最大化的多值数据，从而存储一位输入存储单元中的伪二进制状态的数据。在第二写入操作中，处理大于第一单元的第二单元中的数据，多值状态中的多个输入数据位和第二单元中用于纠错的奇偶校验数据被存储在存储单元中。

2. 发明授权

US08130545B2 Nonvolatile semiconductor storage device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08130545B2
公开(公告)日：2012-03-06
申请号：US12938435
申请日：2010-11-03
申请人： Yasuhiko Honda , Takahiro Suzuki , Masao Iwamoto , Kiyochika Kinjo
发明人： Yasuhiko Honda , Takahiro Suzuki , Masao Iwamoto , Kiyochika Kinjo
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/10 , G11C11/5628 , G11C29/00
摘要： A nonvolatile semiconductor storage device capable of storing a plurality of bits of data in one memory cell by assigning multivalued data having a higher-order bit selected from one of a pair of data in a first unit and a lower-order bit selected from the other of the pair of data to each threshold voltage of the memory cell, wherein in a first write operation that processes data in the first unit, the logic of one of the higher-order bit and the lower-order bit is fixed, and two pieces of multivalued data that maximize the difference between the threshold voltages are assigned, thereby storing one bit of input data in the one memory cell in a pseudo binary state, and in a second write operation that processes data in a second unit larger than the first unit, a plurality of bits of input data is stored in the one memory cell in a multivalued state, and parity data for error correction in the second unit is stored in the memory cell.
摘要翻译：一种非易失性半导体存储装置，其能够通过分配具有从第一单位中选择的一对数据中的一个中选择的高阶位的多值数据和从另一个存储单元中选择的低位位来存储多个数据位在一个存储单元中所述数据对与所述存储单元的每个阈值电压相关，其中在处理所述第一单元中的数据的第一写入操作中，所述高位和低位中的一个的逻辑被固定，并且两个分配最大化阈值电压之间的差异的多值数据，从而将一位存储单元中的一位输入数据存储在伪二进制状态，并且在第二写入操作中处理大于第一单元的第二单元中的数据输入数据的多个位以多值状态存储在一个存储单元中，第二单元中用于纠错的奇偶校验数据被存储在存储单元中。

3. 发明授权

US07843728B2 Nonvolatile semiconductor storage device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07843728B2
公开(公告)日：2010-11-30
申请号：US12272161
申请日：2008-11-17
申请人： Yasuhiko Honda , Takahiro Suzuki , Masao Iwamoto , Kiyochika Kinjo
发明人： Yasuhiko Honda , Takahiro Suzuki , Masao Iwamoto , Kiyochika Kinjo
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C11/5628 , G11C29/00
摘要： A nonvolatile semiconductor storage device capable of storing a plurality of bits of data in one memory cell by assigning multivalued data having a higher-order bit selected from one of a pair of data in a first unit and a lower-order bit selected from the other of the pair of data to each threshold voltage of the memory cell, wherein in a first write operation that processes data in the first unit, the logic of one of the higher-order bit and the lower-order bit is fixed, and two pieces of multivalued data that maximize the difference between the threshold voltages are assigned, thereby storing one bit of input data in the one memory cell in a pseudo binary state, and in a second write operation that processes data in a second unit larger than the first unit, a plurality of bits of input data is stored in the one memory cell in a multivalued state, and parity data for error correction in the second unit is stored in the memory cell.
摘要翻译：一种非易失性半导体存储装置，其能够通过分配具有从第一单位中选择的一对数据中的一个中选择的高阶位的多值数据和从另一个存储单元中选择的低位位来存储多个数据位在一个存储单元中所述数据对与所述存储单元的每个阈值电压相关，其中在处理所述第一单元中的数据的第一写入操作中，所述高位和低位中的一个的逻辑被固定，并且两个分配最大化阈值电压之间的差异的多值数据，从而将一位存储单元中的一位输入数据存储在伪二进制状态，并且在第二写入操作中处理大于第一单元的第二单元中的数据输入数据的多个位以多值状态存储在一个存储单元中，第二单元中用于纠错的奇偶校验数据被存储在存储单元中。

4. 发明授权

US08098532B2 Non-volatile semiconductor storage device with address search circuit used when writing 有权
标题翻译：写入时使用地址搜索电路的非易失性半导体存储器件
公开(公告)号：US08098532B2
公开(公告)日：2012-01-17
申请号：US12273813
申请日：2008-11-19
申请人： Yuji Komine , Shinya Fujisawa , Yasuhiko Honda , Ryu Hondai , Takamichi Kasai , Takahiro Suzuki
发明人： Yuji Komine , Shinya Fujisawa , Yasuhiko Honda , Ryu Hondai , Takamichi Kasai , Takahiro Suzuki
IPC分类号： G11C7/10
CPC分类号： G11C16/10 , G11C11/5628 , G11C15/046 , G11C16/344 , G11C16/3445 , G11C16/3454 , G11C16/3459
摘要： A non-volatile semiconductor storage device includes a memory cell array having a plurality of non-volatile memory cells, an address search circuit which searches for write object data and outputs an address where the write object data is present, when writing data into the non-volatile memory cells, and a control circuit which exercises control to write the write object data into the non-volatile memory cells in accordance with the address output from the address search circuit.
摘要翻译：非挥发性半导体存储装置包括具有多个非易失性存储单元的存储单元阵列，地址搜索电路，当将数据写入非易失性存储单元时，搜索写入对象数据并输出存在写入对象数据的地址并且控制电路根据从地址搜索电路输出的地址进行控制以将写入目标数据写入非易失性存储单元。

5. 发明申请

US20090129156A1 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：非挥发性半导体存储器件
公开(公告)号：US20090129156A1
公开(公告)日：2009-05-21
申请号：US12273813
申请日：2008-11-19
申请人： Yuji KOMINE , Shinya Fujisawa , Yasuhiko Honda , Ryu Hondai , Takamichi Kasai , Takahiro Suzuki
发明人： Yuji KOMINE , Shinya Fujisawa , Yasuhiko Honda , Ryu Hondai , Takamichi Kasai , Takahiro Suzuki
IPC分类号： G11C16/06 , G11C11/34 , G11C7/10
CPC分类号： G11C16/10 , G11C11/5628 , G11C15/046 , G11C16/344 , G11C16/3445 , G11C16/3454 , G11C16/3459
摘要： A non-volatile semiconductor storage device includes a memory cell array having a plurality of non-volatile memory cells, an address search circuit which searches for write object data and outputs an address where the write object data is present, when writing data into the non-volatile memory cells, and a control circuit which exercises control to write the write object data into the non-volatile memory cells in accordance with the address output from the address search circuit.
摘要翻译：非易失性半导体存储装置包括具有多个非易失性存储单元的存储单元阵列，地址搜索电路，当将数据写入非易失性存储单元时，搜索写入对象数据并输出存在写入对象数据的地址并且控制电路根据从地址搜索电路输出的地址进行控制以将写入目标数据写入非易失性存储单元。

6. 发明授权

US11082617B2 Electronic device including power supply and method to be executed by electronic device including power supply 有权
公开(公告)号：US11082617B2
公开(公告)日：2021-08-03
申请号：US16353765
申请日：2019-03-14
申请人： Naoto Asakura , Yoshitaka Kimura , Teruyuki Takei , Takahiro Suzuki
发明人： Naoto Asakura , Yoshitaka Kimura , Teruyuki Takei , Takahiro Suzuki
IPC分类号： H04N5/232 , H04N5/369
摘要： An electronic device includes a power supply and a power supply circuit. The power supply circuit is configured to alternately switch a state of the electronic device between a first state to supply power to another device and a second state to receive power from said another device, and stop a switching operation of the state of the electronic device when the electronic device is off, to fix the state of the electronic device to one of the first state and the second state.

7. 发明授权

US10058846B2 Catalyst for purifying exhaust gas 有权
公开(公告)号：US10058846B2
公开(公告)日：2018-08-28
申请号：US15663952
申请日：2017-07-31
申请人： Yoshinori Saito , Masahide Miura , Seiji Nakahigashi , Hiromasa Suzuki , Takahiro Suzuki , Kosuke Iizuka , Minoru Ito , Ryota Nakashima
发明人： Yoshinori Saito , Masahide Miura , Seiji Nakahigashi , Hiromasa Suzuki , Takahiro Suzuki , Kosuke Iizuka , Minoru Ito , Ryota Nakashima
IPC分类号： B01J23/10 , B01J23/63 , B01J21/06 , B01J35/00 , B01J35/02 , B01J35/04 , B01J20/02 , B01J20/28 , B01J37/02 , B01J20/32 , B01D53/94
CPC分类号： B01J23/10 , B01D53/9445 , B01D53/945 , B01D2255/1023 , B01D2255/1025 , B01D2255/2061 , B01D2255/2063 , B01D2255/2066 , B01D2255/2092 , B01D2255/407 , B01D2255/9022 , B01D2255/908 , B01D2255/9202 , B01J20/0211 , B01J20/0225 , B01J20/28004 , B01J20/3236 , B01J23/63 , B01J35/0006 , B01J35/002 , B01J35/023 , B01J37/0244 , C01G25/00 , Y02T10/22
摘要： An catalyst for purifying exhaust gas comprising an OCS material that has sufficient heat resistance and achieves a favorable balance between the oxygen storage volume and the oxygen absorption/release rate includes an catalyst for purifying exhaust, which has a substrate and a catalyst coating layer formed on the substrate, wherein the catalyst coating layer comprises a ceria-zirconia-based composite oxide having a pyrochlore structure in an amount of 5 to 100 g/L based on the volume of the substrate, the ceria-zirconia-based composite oxide has a secondary particle size (D50) of 3 μm to 7 μm, and the ceria-zirconia-based composite oxide optionally contains praseodymium.

8. 发明申请

US20160370738A1 RECORDING MEDIUM CONVEYANCE GUIDE DEVICE, TRANSFER DEVICE, AND IMAGE FORMING APPARATUS 审中-公开
标题翻译：记录介质传输指南设备，传输设备和图像形成设备
公开(公告)号：US20160370738A1
公开(公告)日：2016-12-22
申请号：US15173364
申请日：2016-06-03
申请人： Takahiro Suzuki
发明人： Takahiro Suzuki
IPC分类号： G03G15/16
CPC分类号： G03G15/1605 , G03G15/6558 , G03G2215/0129
摘要： A recording medium conveyance guide device includes a conveyance guide disposed upstream from a transfer nip to transfer an image to a recording medium in a recording-medium conveyance direction, to at least partially contact the recording medium. The recording medium conveyance guide device further includes a drive device to move a leading edge of the conveyance guide from a first position to a second position closer to the transfer nip than the first position when the trailing edge of the recording medium approaches the leading edge of the conveyance guide.
摘要翻译：记录介质传送引导装置包括设置在转印夹持部的上游的输送引导件，以将记录介质输送方向的图像转印到记录介质上，至少部分地与记录介质接触。记录介质传送引导装置还包括驱动装置，当记录介质的后缘接近记录介质的前缘时，驱动装置将输送引导件的前边缘从第一位置移动到比第一位置更靠近转印夹持口的第二位置运输指南。

9. 发明授权

US08999119B2 Hydrogen production device 有权
标题翻译：氢气生产装置
公开(公告)号：US08999119B2
公开(公告)日：2015-04-07
申请号：US13702443
申请日：2011-08-26
申请人： Kenichi Tokuhiro , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura
发明人： Kenichi Tokuhiro , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura
IPC分类号： C25B1/04 , C25B1/02 , C25B9/00 , C25B9/06 , C25B9/08 , C25B9/10 , C25B13/00 , C25B11/02 , C25B15/00 , C25B11/04 , C01B3/04 , C25B1/00 , C25B11/03 , B01J35/00
CPC分类号： C25B11/0442 , B01J35/004 , C01B3/042 , C25B1/003 , C25B9/08 , C25B11/03 , Y02E60/364 , Y02E60/368
摘要： The hydrogen production device of the present invention includes: a first electrode including a conductive substrate and a photocatalytic semiconductor layer; a second electrode that is electrically connected to the first electrode and disposed in a second region opposite to a first region relative to the first electrode; the first region is defined as a region on a side of a surface of the first electrode in which the photocatalytic semiconductor layer is provided; a water-containing electrolyte solution; and a housing containing these. The first electrode is provided with first through-holes and the second electrode is provided with second through-holes; and the first through-holes and second through-holes form a communicating hole for allowing the first region and the second region to communicate with each other. An ion exchange membrane having substantially the same shape as the communicating hole is disposed in the communicating hole to close the communicating hole.
摘要翻译：本发明的氢制造装置包括：第一电极，其包括导电性基板和光催化性半导体层; 第二电极，其电连接到第一电极并且设置在相对于第一电极与第一区域相反的第二区域中; 第一区域被定义为设置有光催化半导体层的第一电极的表面侧的区域; 含水电解质溶液; 和包含这些的房屋。第一电极设置有第一通孔，第二电极设置有第二通孔; 并且第一通孔和第二通孔形成用于使第一区域和第二区域彼此连通的连通孔。具有与连通孔大致相同形状的离子交换膜设置在连通孔中以闭合连通孔。

10. 发明申请

US20150080211A1 IRON OXIDE-ZIRCONIA COMPOSITE OXIDE AND METHOD FOR PRODUCING SAME, AND EXHAUST GAS PURIFICATION CATALYST 有权
标题翻译：氧化铁 - 氧化锆氧化物及其制造方法和排气净化催化剂
公开(公告)号：US20150080211A1
公开(公告)日：2015-03-19
申请号：US14384283
申请日：2013-04-26
申请人： Masahide Miura , Atsushi Tanaka , Takahiro Suzuki , Tadashi Suzuki , Toshitaka Tanabe , Naoki Takahashi
发明人： Masahide Miura , Atsushi Tanaka , Takahiro Suzuki , Tadashi Suzuki , Toshitaka Tanabe , Naoki Takahashi
IPC分类号： B01J23/89 , B01J23/83 , B01J23/745
CPC分类号： B01J23/894 , B01J21/066 , B01J23/10 , B01J23/745 , B01J23/83 , B01J35/0006 , B01J35/002 , B01J37/0248 , B01J37/03 , C01G25/00 , C01G49/0018 , C01G49/0054 , C01P2002/72 , C01P2004/03 , C01P2004/32 , C01P2004/45 , C01P2004/61 , C01P2006/12
摘要： A composite oxide with a high oxygen storage capacity is provided without using cerium. The composite oxide is an iron oxide-zirconia composite oxide containing iron, zirconium, and a rare-earth element. The total content of Fe2O3, ZrO2, and an oxide of the rare-earth element is not less than 90 mass %, the content of an iron oxide in terms of Fe2O3 is 10 to 90 mass %, and the absolute value of the covariance COV(Fe, Zr+X) of the composite oxide, which has been baked in the atmosphere at a temperature of greater than or equal to 900° C. for 5 hours or more, determined by the following Formulae (1) to (3), is not greater than 20:  [ Math .  1 ]  R i  ( Fe ) = I i  ( Fe ) × 100 I i  ( Fe ) + I i  ( Zr ) + I i  ( X ) ( 1 )  R i  ( Zr + X ) = { I i  ( Zr ) + I i  ( X ) } × 100 I i  ( Fe ) + I i  ( Zr ) + I i  ( X ) ( 2 ) COV  ( Fe , Zr + X ) = 1 n  ∑ i = 1 n   [ { R i  ( Fe ) - R av  ( Fe ) } × { R i  ( Zr + X ) - R av  ( Zr + X ) } ] ( 3 ) (in the formula, Ii(Fe), Ii(Zr), and Ii(X) respectively represent the ratios of the X-ray intensities of iron, zirconium, and the rare-earth element measured at a measurement point i (where i=1 to n) to the 100% intensities of the respective elements as measured by subjecting the composite oxide to a ray analysis through EPMA (WDX: wavelength dispersive X-ray spectrometry), where Rav(Fe) and Rav(Zr+X) represent the mean values of Ri(Fe) and Ri(Zr+X), respectively, at all measurement points n).
摘要翻译：提供具有高储氧能力的复合氧化物，而不使用铈。复合氧化物是含有铁，锆和稀土元素的氧化铁 - 氧化锆复合氧化物。 Fe2O3，ZrO2和稀土类元素的氧化物的总含量为90质量％以上，Fe 2 O 3的氧化铁含量为10〜90质量％，协方差COV的绝对值（1）〜（3）确定的复合氧化物的（Fe，Zr + X），其在大气中在大于或等于900℃的温度下烘烤5小时以上，，不大于20：（Fe）= I（Fe）×100 I i（Fe）+ I（Zr）+ I（X）（1）R i（Zr + X ）（I）（X）（X）（2）COV（Fe，Zr + X））= 1 nΣi = 1 n[{R i（Fe）-R av（Fe）}×{R i（Zr + X）-R av（Zr + X）}] 3）（式中，Ii（Fe），Ii（Zr）和Ii（X）分别表示在测量点i测量的铁，锆和稀土元素的X射线强度的比例其中i = 1至n）相对于通过EPMA（WDX：波长色散X射线光谱法）对复合氧化物进行射线分析测量的各元素的100％强度，其中Rav（Fe）和Rav（Zr + X）分别表示在所有测量点n处的Ri（Fe）和Ri（Zr + X）的平均值。

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