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    • 1. 发明申请
    • MEMORY CELL WITH IMPROVED WRITE MARGIN
    • 具有改进的写字符的存储单元
    • US20140003181A1
    • 2014-01-02
    • US13997633
    • 2012-03-30
    • Yih WangMuhammad M. KhellahFatih Hamzaoglu
    • Yih WangMuhammad M. KhellahFatih Hamzaoglu
    • G11C5/14
    • G11C11/419G11C5/14G11C5/147G11C5/148G11C11/4074G11C11/412G11C11/413G11C11/417
    • Described is an apparatus and system for improving write margin in memory cells. In one embodiment, the apparatus comprises: a first circuit to provide a pulse signal with a width; and a second circuit to receive the pulse signal and to generate a power supply for the memory cell, wherein the second circuit to reduce a level of the power supply below a data retention voltage level of the memory cell for a time period corresponding to the width of the pulse signal. In one embodiment, the apparatus comprises a column of memory cells having a high supply node and a low supply node; and a charge sharing circuit positioned in the column of memory cells, the charge sharing circuit coupled to the high and low supply nodes, the charge sharing circuit operable to reduce direct-current (DC) power consumption.
    • 描述了一种用于改善存储器单元中的写入裕度的装置和系统。 在一个实施例中,该装置包括:提供具有宽度的脉冲信号的第一电路; 以及第二电路,用于接收所述脉冲信号并产生用于所述存储器单元的电源,其中所述第二电路将所述电源的电平降低到所述存储单元的数据保持电压电平以下一段对应于所述宽度的时间段 的脉冲信号。 在一个实施例中,该装置包括具有高供应节点和低供应节点的一列存储器单元; 以及位于存储单元列中的电荷共享电路,所述电荷共享电路耦合到所述高电源节点和所述低电源节点,所述电荷共享电路可操作以减少直流(DC)功率消耗。
    • 2. 发明授权
    • Memory cell with improved write margin
    • 具有改善写入容限的存储单元
    • US09111600B2
    • 2015-08-18
    • US13997633
    • 2012-03-30
    • Yih WangMuhammad M. KhellahFatih Hamzaoglu
    • Yih WangMuhammad M. KhellahFatih Hamzaoglu
    • G11C7/00G11C5/14G11C11/413
    • G11C11/419G11C5/14G11C5/147G11C5/148G11C11/4074G11C11/412G11C11/413G11C11/417
    • Described is an apparatus and system for improving write margin in memory cells. In one embodiment, the apparatus comprises: a first circuit to provide a pulse signal with a width; and a second circuit to receive the pulse signal and to generate a power supply for the memory cell, wherein the second circuit to reduce a level of the power supply below a data retention voltage level of the memory cell for a time period corresponding to the width of the pulse signal. In one embodiment, the apparatus comprises a column of memory cells having a high supply node and a low supply node; and a charge sharing circuit positioned in the column of memory cells, the charge sharing circuit coupled to the high and low supply nodes, the charge sharing circuit operable to reduce direct-current (DC) power consumption.
    • 描述了一种用于改善存储器单元中的写入裕度的装置和系统。 在一个实施例中,该装置包括:提供具有宽度的脉冲信号的第一电路; 以及第二电路,用于接收所述脉冲信号并产生用于所述存储器单元的电源,其中所述第二电路将所述电源的电平降低到所述存储单元的数据保持电压电平以下一段对应于所述宽度的时间段 的脉冲信号。 在一个实施例中,该装置包括具有高供应节点和低供应节点的一列存储器单元; 以及位于存储单元列中的电荷共享电路,所述电荷共享电路耦合到所述高电源节点和所述低电源节点,所述电荷共享电路可操作以减少直流(DC)功率消耗。
    • 7. 发明授权
    • Method of correcting adjacent errors by using BCH-based error correction coding
    • 通过使用基于BCH的纠错编码校正相邻误差的方法
    • US08762821B2
    • 2014-06-24
    • US13435152
    • 2012-03-30
    • Wei WuShih-Lien L. LuMuhammad M. Khellah
    • Wei WuShih-Lien L. LuMuhammad M. Khellah
    • H03M13/00G11C29/00
    • G06F11/1064H03M13/152H03M13/1575
    • An apparatus is provided that comprises a processor. The processor comprises a cache to store data, a decoder, an error classification module, and an error correction module. The cache stores data, the data encoded as a codeword. The decoder reads the codeword from cache and calculates a syndrome of the codeword using an H-matrix. The error classification module determines an error type of the syndrome. The H-matrix is redesigned such that the columns form a geometrical sequence, and as a result not only t-bit random errors but also (t+1) bit adjacent errors can be corrected. The error correction module, triggered by the enhanced error classification module, takes one of two sets of inputs depending on error type (either random error or adjacent error) and produces corrected data from the syndrome when the syndrome comprises a detectable and correctable error.
    • 提供了一种包括处理器的装置。 处理器包括用于存储数据的缓存,解码器,错误分类模块和纠错模块。 高速缓存存储数据,数据被编码为码字。 解码器从缓存器读取码字,并使用H矩阵计算码字的校正子。 错误分类模块确定综合征的错误类型。 H矩阵被重新设计,使得列形成几何序列,结果不仅可以校正t位随机误差,而且可以校正(t + 1)位相邻误差。 由增强的误差分类模块触发的误差校正模块根据误差类型(随机误差或相邻误差)采用两组输入中的一组,并且当综合征包括可检测和可校正的误差时,产生校正数据。
    • 8. 发明申请
    • Method Of Correcting Adjacent Errors By Using BCH-Based Error Correction Coding
    • 通过使用基于BCH的纠错编码校正相邻错误的方法
    • US20130262957A1
    • 2013-10-03
    • US13435152
    • 2012-03-30
    • Wei WuShih-Lien L. LuMuhammad M. Khellah
    • Wei WuShih-Lien L. LuMuhammad M. Khellah
    • H03M13/07G06F11/10
    • G06F11/1064H03M13/152H03M13/1575
    • An apparatus is provided that comprises a processor. The processor comprises a cache to store data, a decoder, an error classification module, and an error correction module. The cache stores data, the data encoded as a codeword. The decoder reads the codeword from cache and calculates a syndrome of the codeword using an H-matrix. The error classification module determines an error type of the syndrome. The H-matrix is redesigned such that the columns form a geometrical sequence, and as a result not only the t-bit random errors but also (t+1) bit adjacent errors can be corrected. The error correction module, triggered by the enhanced error classification module, takes one of two sets of inputs depends on the error type (either random or adjacent error) and produces corrected data from the syndrome when the syndrome comprises a detectable and correctable error.
    • 提供了一种包括处理器的装置。 处理器包括用于存储数据的缓存,解码器,错误分类模块和纠错模块。 高速缓存存储数据,数据被编码为码字。 解码器从缓存器读取码字,并使用H矩阵计算码字的校正子。 错误分类模块确定综合征的错误类型。 H矩阵被重新设计,使得列形成几何序列,结果不仅可以校正t位随机误差,而且(t + 1)位相邻误差。 由增强的误差分类模块触发的误差校正模块根据误差类型(随机或相邻误差)采用两组输入中的一组,并且当综合征包括可检测和可校正的误差时,产生校正数据。