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1. 发明申请

US20110255197A1 MICROWAVE OSCILLATING ELEMENT AND THIN FILM MAGNETIC HEAD THEREWITH 有权
标题翻译：微波振荡元件和薄膜磁头
公开(公告)号：US20110255197A1
公开(公告)日：2011-10-20
申请号：US12763577
申请日：2010-04-20
申请人： Yoshihiro TSUCHIYA , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro TSUCHIYA , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/127 , G11B5/48 , H02N99/00
CPC分类号： G11B5/6005 , G11B5/314 , G11B2005/0024
摘要： A microwave oscillation element of the present invention includes a lamination main part in which an oscillating layer that is a magnetization free layer and that generates a high frequency electromagnetic field by an excitation of a spin wave, a nonmagnetic intermediate layer, a polarizer layer, and a reference layer that is to be a base magnetic layer of a spin transfer due to application of current are layered in this order. The oscillating layer is made of CoIr, the polarizer layer is configured of CoCr or CoRu; and the nonmagnetic intermediate layer is configured of Cr or Ru. As a result, the efficiency of the spin injection is improved and the microwave oscillation element where the oscillation efficiency is excellent can be realized.
摘要翻译：本发明的微波振荡元件包括层叠主体部，其中，作为磁化自由层的振动层，通过自旋波的激发产生高频电磁场，非磁性中间层，偏振片层和将由于施加电流而成为自旋转移的基础磁性层的参考层按此顺序分层。振荡层由CoIr制成，偏振层由CoCr或CoRu构成; 非磁性中间层由Cr或Ru构成。结果，提高了自旋注入的效率，并且可以实现振荡效率优异的微波振荡元件。

2. 发明申请

US20100198955A1 COMPUTER-READABLE RECORDING MEDIUM STORING SOFTWARE UPDATE COMMAND PROGRAM, SOFTWARE UPDATE COMMAND METHOD, AND INFORMATION PROCESSING DEVICE 失效
标题翻译：计算机可读记录介质存储软件更新命令程序，软件更新命令方法和信息处理设备
公开(公告)号：US20100198955A1
公开(公告)日：2010-08-05
申请号：US12560037
申请日：2009-09-15
申请人： Tetsutaro MARUYAMA , Yoshihiro TSUCHIYA , Masahisa TAMURA , Hideki SAKURAI
发明人： Tetsutaro MARUYAMA , Yoshihiro TSUCHIYA , Masahisa TAMURA , Hideki SAKURAI
IPC分类号： G06F15/173
CPC分类号： G06F8/65
摘要： An information processing device is provided that provides service by executing a service provider program in a cluster system. The device includes a program information transmission unit that transmits to a monitoring node that monitors the cluster system, a node list information reception unit that receives node list information, an update target selection unit that determines which of the other information processing devices which are not yet updated with the service provider program by referring to the program information in the node list information, a command timing determination unit that determines a time after a lapse of the standby time found in the first update timing information as a command timing of the update command, an update timing information generation unit that generates second update timing information and an update command transmission unit that transmits the update command about the service provider program and the second update timing information.
摘要翻译：提供了通过在集群系统中执行服务提供商程序来提供服务的信息处理设备。该设备包括：节目信息发送单元，其发送到监视群集系统的监视节点;节点列表信息接收单元，其接收节点列表信息;更新目标选择单元，确定哪个其他信息处理设备尚未通过参照节点列表信息中的节目信息与服务提供商节目更新;命令定时确定单元，确定在第一更新定时信息中发现的待机时间过去之后的时间作为更新命令的命令定时，生成第二更新定时信息的更新定时信息生成单元和发送关于服务提供者程序和第二更新定时信息的更新命令的更新命令发送单元。

3. 发明申请

US20080226948A1 MAGNETO-RESISTANCE EFFECT ELEMENT HAVING DIFFUSION BLOCKING LAYER AND THIN-FILM MAGNETIC HEAD 有权
标题翻译：具有扩散阻挡层和薄膜磁头的磁阻效应元件
公开(公告)号：US20080226948A1
公开(公告)日：2008-09-18
申请号：US11685021
申请日：2007-03-12
申请人： Tomohito MIZUNO , Takahiko MACHITA , Kei HIRATA , Yoshihiro TSUCHIYA , Shinji HARA
发明人： Tomohito MIZUNO , Takahiko MACHITA , Kei HIRATA , Yoshihiro TSUCHIYA , Shinji HARA
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F10/3272 , Y10T428/1121
摘要： A magnetoresistance effect element (MR element) for use in a thin-film magnetic head has a buffer layer, an antiferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer that are successively stacked. A sense current flows in a direction perpendicular to layer surfaces via a lower shield layer and an upper shield layer. The pinned layer comprises an outer layer having a fixed magnetization direction, a nonmagnetic intermediate layer, and an inner layer in the form of a ferromagnetic layer. The spacer layer comprises a first nonmagnetic metal layer, a semiconductor layer made of ZnO, and a second nonmagnetic metal layer. The inner layer or the outer layer includes a diffusion blocking layer made of an oxide of an element whose electronegativity is equal to or smaller than Zn, e.g., ZnO, TaO, ZrO, MgO, TiO, or HfO, or made of RuO.
摘要翻译：用于薄膜磁头的磁阻效应元件（MR元件）具有依次层叠的缓冲层，反铁磁层，钉扎层，间隔层，自由层和盖层。感测电流通过下屏蔽层和上屏蔽层在垂直于层表面的方向上流动。被钉扎层包括具有固定磁化方向的外层，非磁性中间层和呈铁磁层形式的内层。间隔层包括第一非磁性金属层，由ZnO制成的半导体层和第二非磁性金属层。内层或外层包括由电负性等于或小于Zn的元素的氧化物（例如ZnO，TaO，ZrO，MgO，TiO或HfO）或由RuO制成的扩散阻挡层。

4. 发明申请

US20080218907A1 MAGNETO-RESISTANCE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD 有权
标题翻译：磁阻效应元件和薄膜磁头
公开(公告)号：US20080218907A1
公开(公告)日：2008-09-11
申请号：US11682421
申请日：2007-03-06
申请人： Tomohito MIZUNO , Kei HIRATA , Yoshihiro TSUCHIYA , Koji SHIMAZAWA
发明人： Tomohito MIZUNO , Kei HIRATA , Yoshihiro TSUCHIYA , Koji SHIMAZAWA
IPC分类号： G11B5/39
CPC分类号： G11B5/59683
摘要： A magneto-resistance effect element (MR element) used for a thin film magnetic head is configured by a buffer layer, an anti-ferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer, which are laminated in this order, and a sense current flows through the element in a direction orthogonal to the layer surface, via a lower shield layer and a upper shield layer. The pinned layer comprises an outer layer in which a magnetization direction is fixed, a non-magnetic intermediate layer, and an inner layer which is a ferromagnetic layer. The spacer layer comprises a first non-magnetic metal layer, a semiconductor layer, and a second non-magnetic metal layer. The first non-magnetic metal layer and the second non-magnetic metal layer comprise CuPt films having a thickness ranging from a minimum of 0.2 nm to a maximum of 2.0 nm, and the Pt content ranges from a minimum of 5 at % to a maximum of 25 at %. The semiconductor layer comprises a ZnO film, ZnS film, or GaN film having a thickness ranging from a minimum of 1.0 nm to a maximum of 2.5 nm.
摘要翻译：用于薄膜磁头的磁阻效应元件（MR元件）由层叠的缓冲层，反铁磁层，钉扎层，间隔层，自由层和覆盖层构成并且感测电流经由下屏蔽层和上屏蔽层沿着与层表面正交的方向流过元件。被钉扎层包括其中磁化方向固定的外层，非磁性中间层和作为铁磁层的内层。间隔层包括第一非磁性金属层，半导体层和第二非磁性金属层。第一非磁性金属层和第二非磁性金属层包括厚度范围最小为0.2nm至最大2.0nm的CuPt膜，并且Pt含量范围为最小值5at％至最大值为25原子％。半导体层包括厚度范围为1.0nm至最大2.5nm的ZnO膜，ZnS膜或GaN膜。

5. 发明申请

US20130111165A1 COMPUTER PRODUCT, WRITING CONTROL METHOD, WRITING CONTROL APPARATUS, AND SYSTEM 有权
标题翻译：计算机产品，书写控制方法，书写控制装置和系统
公开(公告)号：US20130111165A1
公开(公告)日：2013-05-02
申请号：US13588415
申请日：2012-08-17
申请人： Toshihiro OZAWA , Kazutaka OGIHARA , Yasuo NOGUCHI , Tatsuo KUMANO , Masahisa TAMURA , Yoshihiro TSUCHIYA , Takashi WATANABE , Kazuichi OE
发明人： Toshihiro OZAWA , Kazutaka OGIHARA , Yasuo NOGUCHI , Tatsuo KUMANO , Masahisa TAMURA , Yoshihiro TSUCHIYA , Takashi WATANABE , Kazuichi OE
IPC分类号： G06F12/16
CPC分类号： G06F11/2089 , G06F11/2092
摘要： A computer-readable recording medium stores a program that causes a computer to execute a writing control process that includes receiving a writing request to write a first data to a first storage apparatus; determining a second data from among a series of data and based on a writing sequence of the series of data written to the computer and a count of storage areas at a second storage apparatus that sequentially selects from among the storage areas when data is received, a storage area to be over written by the received data, where the second data is written to the first storage apparatus and is identical to data that is stored in the storage area to be selected next at the second storage apparatus; and transmitting copy data of the first data to the second storage apparatus, when the second data has been written to the first storage apparatus.
摘要翻译：计算机可读记录介质存储使计算机执行写入控制处理的程序，该程序包括接收将第一数据写入第一存储装置的写入请求; 从一系列数据中确定第二数据，并且基于写入计算机的一系列数据的写入顺序和在接收数据时从存储区域中顺次选择的第二存储装置的存储区域的计数，存储区域被接收到的数据写入，其中第二数据被写入到第一存储装置，并且与在第二存储装置中接下来要选择的存储区域中存储的数据相同; 以及当所述第二数据已被写入到所述第一存储装置时，将所述第一数据的复制数据发送到所述第二存储装置。

6. 发明申请

US20120241883A1 SPIN TRANSPORT DEVICE AND MAGNETIC HEAD 审中-公开
标题翻译：旋转运输装置和磁头
公开(公告)号：US20120241883A1
公开(公告)日：2012-09-27
申请号：US13409844
申请日：2012-03-01
申请人： Tomoyuki SASAKI , Tohru OIKAWA , Yoshihiro TSUCHIYA
发明人： Tomoyuki SASAKI , Tohru OIKAWA , Yoshihiro TSUCHIYA
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , H01L43/08 , H01L43/10
摘要： The present invention provides a spin transport device having lowered areal resistance in its tunneling layer and a magnetic head. The spin transport device (magnetic sensor 1) comprises a channel layer 10 constituted by a semiconductor, ferromagnetic layers 20A, 20B formed on the channel layer 10, and tunneling layers 22A, 22B formed so as to be interposed between the channel layer 10 and ferromagnetic layers 20A, 20B, while the tunneling layers 22A, 22B are constituted by a material substituting a part of Mg in MgO with Zn. As a result of studies, the inventors observed a decrease in areal resistance in a tunnel material having substituted a part of Mg in MgO with Zn. Therefore, the tunneling layers 22A, 22B can lower their areal resistance when constructed by a material having substituted a part of Mg in MgO with Zn.
摘要翻译：本发明提供一种其隧道层和磁头具有降低的面积电阻的自旋传输装置。自旋传输装置（磁传感器1）包括由半导体构成的沟道层10，形成在沟道层10上的铁磁层20A，20B，以及形成为介于沟道层10和铁磁层之间的隧道层22A，22B 层20A，20B，而隧道层22A，22B由用MgO代替MgO中的一部分Mg的材料构成。作为研究的结果，本发明人观察到在用MgO取代MgO中的一部分Mg的隧道材料中的面电阻降低。因此，隧道层22A，22B可以通过用MgO取代MgO中的一部分Mg的材料构成，从而降低它们的面积电阻。

7. 发明申请

US20100199126A1 DISK ARRAY APPARATUS, DATA DISTRIBUTION AND MANAGEMENT METHOD, AND DATA DISTRIBUTION AND MANAGEMENT PROGRAM 有权
标题翻译：磁盘阵列设备，数据分配和管理方法以及数据分配和管理程序
公开(公告)号：US20100199126A1
公开(公告)日：2010-08-05
申请号：US12636268
申请日：2009-12-11
申请人： Yasuo NOGUCHI , Kazutaka OGIHARA , Masahisa TAMURA , Yoshihiro TSUCHIYA , Tetsutaro MARUYAMA , Takashi WATANABE , Tatsuo KUMANO , Kazuichi OE
发明人： Yasuo NOGUCHI , Kazutaka OGIHARA , Masahisa TAMURA , Yoshihiro TSUCHIYA , Tetsutaro MARUYAMA , Takashi WATANABE , Tatsuo KUMANO , Kazuichi OE
IPC分类号： G06F11/00 , G06F12/00 , G06F11/16
CPC分类号： G06F11/1076 , G06F2211/104
摘要： A parity-data generating unit generates, in response to a write request containing update data, updated parity data in the parity group to which the update data belongs. A time-series-information generating unit generates time-series information indicating an anteroposterior relationship during writing between the update data and existing data stored in the unit storage area to which the update data is to be written. A time-series-information adding unit adds the time-series information, generated in response to the write request, to the update data as certification time-series information and that adds comparison time-series information to the updated parity data in association with the update data, the comparison time-series information having the same value as the certification time-series information. A writing unit distributes and writes, to the multiple storage devices, the update data to which the certification time-series information is added and the updated parity data to which the comparison time-series information is added.
摘要翻译：奇偶校验数据生成单元响应于包含更新数据的写入请求，生成更新数据所属的奇偶校验组中的更新奇偶校验数据。时间序列信息生成单元生成指示更新数据与存储在更新数据要被写入的单位存储区域中的现有数据之间的写入期间的前后关系的时间序列信息。时间序列信息添加单元将作为响应于写入请求生成的时间序列信息添加到作为认证时间序列信息的更新数据，并且将比较时间序列信息与更新的奇偶校验数据相关联地将比较时间序列信息与更新数据，比较时间序列信息具有与认证时间序列信息相同的值。写入单元向多个存储设备分发并添加添加有认证时间序列信息的更新数据和添加了比较时间序列信息的更新的奇偶校验数据。

8. 发明申请

US20080204942A1 MAGNETIC THIN FILM HAVING SPACER LAYER THAT CONTAINS CuZn 有权
标题翻译：具有包含CuZn的间隔层的磁薄膜
公开(公告)号：US20080204942A1
公开(公告)日：2008-08-28
申请号：US11678506
申请日：2007-02-23
申请人： Takahiko MACHITA , Tomohito MIZUNO , Yoshihiro TSUCHIYA , Daisuke MIYAUCHI , Shinji HARA
发明人： Takahiko MACHITA , Tomohito MIZUNO , Yoshihiro TSUCHIYA , Daisuke MIYAUCHI , Shinji HARA
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , Y10T29/4903 , Y10T29/49043
摘要： A magnetic thin film has a pinned layer whose magnetization direction is fixed with respect to an external magnetic field, a free layer whose magnetization direction is changed according to the external magnetic field, and a spacer layer which is sandwiched between said pinned layer and said free layer. Sense current is configured to flow in a direction that is perpendicular to film surfaces of said pinned layer, said spacer layer, and said free layer. Said spacer layer has a CuZn metal alloy which includes an oxide region, said oxide region consisting of an oxide of any of Al, Si, Cr, Ti, Hf, Zr, Zn, and Mg.
摘要翻译：磁性薄膜具有相对于外部磁场的磁化方向固定的固定层，其磁化方向根据外部磁场而变化的自由层和夹在所述被钉扎层和所述自由层之间的间隔层层。感应电流被配置为沿着垂直于所述被钉扎层，所述间隔层和所述自由层的膜表面的方向流动。所述间隔层具有包括氧化物区域的CuZn金属合金，所述氧化物区域由Al，Si，Cr，Ti，Hf，Zr，Zn和Mg中的任一种的氧化物组成。

9. 发明申请

US20080198513A1 MAGNETIC THIN FILM HAVING NON-MAGNETIC SPACER LAYER THAT IS PROVIDED WITH SnO2 LAYER 有权
标题翻译：具有SnO2层的非磁性间隔层的磁性薄膜
公开(公告)号：US20080198513A1
公开(公告)日：2008-08-21
申请号：US11676969
申请日：2007-02-20
申请人： Shinji HARA , Yoshihiro TSUCHIYA , Tomohito MIZUNO
发明人： Shinji HARA , Yoshihiro TSUCHIYA , Tomohito MIZUNO
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetic thin film has: a pinned layer whose magnetization direction is fixed with respect to an external magnetic field; a free layer whose magnetization direction is changed in accordance with the external magnetic field; and a non-magnetic spacer layer that is sandwiched between said pinned layer and said free layer, wherein sense current is configured to flow in a direction that is perpendicular to film surfaces of said pinned layer, said non-magnetic spacer layer, and said free layer. Said non-magnetic spacer layer has a first layer which includes SnO2, and a pair of second layers which are provided to sandwich said first layer, said second layers being made of a material which exhibits a higher corrosion potential than Sn.
摘要翻译：磁性薄膜具有：磁化方向相对于外部磁场固定的钉扎层; 其磁化方向根据外部磁场而变化的自由层; 以及夹在所述被钉扎层和所述自由层之间的非磁性间隔层，其中感测电流被配置为沿垂直于所述被钉扎层，所述非磁性间隔层的膜表面的方向流动，并且所述自由层层。所述非磁性间隔层具有包括SnO 2 N 2的第一层和设置成夹持所述第一层的一对第二层，所述第二层由表现出较高腐蚀性的材料制成潜力比锡。

10. 发明申请

US20080100969A1 MAGNETO-RESISTANCE EFFECT ELEMENT INCLUDING FREE LAYER HAVING MULTILAYER CONSTITUTION INCLUDING MAGNETIC BODY MIXED WITH ELEMENT HAVING 4F ELECTRONS 有权
标题翻译：具有电磁效应元件，包括具有多层结构的自由层，包括与4F电子元件混合的磁体
公开(公告)号：US20080100969A1
公开(公告)日：2008-05-01
申请号：US11927486
申请日：2007-10-29
申请人： Tomohito MIZUNO , Yoshihiro TSUCHIYA
发明人： Tomohito MIZUNO , Yoshihiro TSUCHIYA
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01L43/10
摘要： In an MR element constituted in such a manner that a pinned layer whose magnetization direction is fixed, a nonmagnetic spacer layer, and a free layer whose magnetization direction is changed according to an external magnetic field, are laminated in this order; the free layer has a multilayer constitution including a magnetic body mixed with an element having 4f electrons at a ratio of 2 at % to 25 at. %. Specifically, the first layer in contact with the spacer layer, the third layer, the fifth layer, and the seventh layer of the free layer are formed by mixing Nd, Sm, Gd, or Tb into CoFe having a ratio of Co less than or equal to 70 at. %. The second layer and the sixth layer of the free layer are formed by mixing Nd, Sm, Gd, or Tb into NiFe having a ratio of Ni greater than or equal to 70 at. % and less than 100 at. %. The third layer of the free layer is Cu. A damping constant of the free layer is greater than 0.018.
摘要翻译：在以使得其磁化方向固定的钉扎层，非磁性间隔层和其磁化方向根据外部磁场而变化的自由层的方式构成的MR元件依次层叠; 自由层具有多层构造，其包括与2at％至25at比的4f电子的元件混合的磁体。％。具体地，通过将Nd，Sm，Gd或Tb与Co的比例Co小于或等于Co的CoFe混合形成与间隔层，第三层，第五层和第七层接触的第一层，等于70。％。自由层的第二层和第六层通过将Nd，Sm，Gd或Tb混合到Ni大于或等于70at的NiFe中而形成。％和小于100。％。自由层的第三层是Cu。自由层的阻尼常数大于0.018。

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