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1. 发明授权

US08154828B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08154828B2
公开(公告)日：2012-04-10
申请号：US12500835
申请日：2009-07-10
申请人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.
摘要翻译： CPP结构中的MR元件包括由Cu制成的间隔层，包含CoFe的磁性固定层和层压以夹持间隔层的CoFe的自由层。自由层位于磁性固定层的下方。自由层在（001）晶面取向，间隔层形成并定向在自由层的（001）晶面上的（001）晶面上。因此，在MR元件的面积电阻率（AR）例如低于0.3

2. 发明申请

US20110255197A1 MICROWAVE OSCILLATING ELEMENT AND THIN FILM MAGNETIC HEAD THEREWITH 有权
标题翻译：微波振荡元件和薄膜磁头
公开(公告)号：US20110255197A1
公开(公告)日：2011-10-20
申请号：US12763577
申请日：2010-04-20
申请人： Yoshihiro TSUCHIYA , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro TSUCHIYA , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/127 , G11B5/48 , H02N99/00
CPC分类号： G11B5/6005 , G11B5/314 , G11B2005/0024
摘要： A microwave oscillation element of the present invention includes a lamination main part in which an oscillating layer that is a magnetization free layer and that generates a high frequency electromagnetic field by an excitation of a spin wave, a nonmagnetic intermediate layer, a polarizer layer, and a reference layer that is to be a base magnetic layer of a spin transfer due to application of current are layered in this order. The oscillating layer is made of CoIr, the polarizer layer is configured of CoCr or CoRu; and the nonmagnetic intermediate layer is configured of Cr or Ru. As a result, the efficiency of the spin injection is improved and the microwave oscillation element where the oscillation efficiency is excellent can be realized.
摘要翻译：本发明的微波振荡元件包括层叠主体部，其中，作为磁化自由层的振动层，通过自旋波的激发产生高频电磁场，非磁性中间层，偏振片层和将由于施加电流而成为自旋转移的基础磁性层的参考层按此顺序分层。振荡层由CoIr制成，偏振层由CoCr或CoRu构成; 非磁性中间层由Cr或Ru构成。结果，提高了自旋注入的效率，并且可以实现振荡效率优异的微波振荡元件。

3. 发明授权

US08279548B2 Microwave oscillating element and thin film magnetic head therewith 有权
标题翻译：微波振荡元件和薄膜磁头
公开(公告)号：US08279548B2
公开(公告)日：2012-10-02
申请号：US12763577
申请日：2010-04-20
申请人： Yoshihiro Tsuchiya , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro Tsuchiya , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/02
CPC分类号： G11B5/6005 , G11B5/314 , G11B2005/0024
摘要： A microwave oscillation element of the present invention includes a lamination main part in which an oscillating layer that is a magnetization free layer and that generates a high frequency electromagnetic field by an excitation of a spin wave, a nonmagnetic intermediate layer, a polarizer layer, and a reference layer that is to be a base magnetic layer of a spin transfer due to application of current are layered in this order. The oscillating layer is made of CoIr, the polarizer layer is configured of CoCr or CoRu; and the nonmagnetic intermediate layer is configured of Cr or Ru. As a result, the efficiency of the spin injection is improved and the microwave oscillation element where the oscillation efficiency is excellent can be realized.
摘要翻译：本发明的微波振荡元件包括层叠主体部，其中，作为磁化自由层的振动层，通过自旋波的激发产生高频电磁场，非磁性中间层，偏振片层和将由于施加电流而成为自旋转移的基础磁性层的参考层按此顺序分层。振荡层由CoIr制成，偏振层由CoCr或CoRu构成; 非磁性中间层由Cr或Ru构成。结果，提高了自旋注入的效率，并且可以实现振荡效率优异的微波振荡元件。

4. 发明申请

US20110007420A1 MAGNETORESISTIVE EFFECT ELEMENT IN CPP-TYPE STRUCTURE AND MAGNETIC DISK DEVICE 有权
标题翻译： CPP型结构和磁盘设备中的磁阻效应元件
公开(公告)号：US20110007420A1
公开(公告)日：2011-01-13
申请号：US12500835
申请日：2009-07-10
申请人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/60 , G11B5/33 , G11B5/48
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.
摘要翻译： CPP结构中的MR元件包括由Cu制成的间隔层，包含CoFe的磁性固定层和层压以夹持间隔层的CoFe的自由层。自由层位于磁性固定层的下方。自由层在（001）晶面取向，间隔层形成并定向在自由层的（001）晶面上的（001）晶面上。因此，在MR元件的面积电阻率（AR）例如低于0.3

5. 发明授权

US08000063B2 Magneto-resistive element, thin film magnetic head, magnetic head device, and magnetic recording/reproducing apparatus 有权
标题翻译：磁阻元件，薄膜磁头，磁头装置和磁记录/重放装置
公开(公告)号：US08000063B2
公开(公告)日：2011-08-16
申请号：US11623493
申请日：2007-01-16
申请人： Atsushi Yamaguchi , Kei Hirata , Satoshi Miura , Yoshihiro Tsuchiya , Kiyoshi Noguchi
发明人： Atsushi Yamaguchi , Kei Hirata , Satoshi Miura , Yoshihiro Tsuchiya , Kiyoshi Noguchi
IPC分类号： G11B5/39
CPC分类号： G11B5/3967 , G11B5/11 , G11B5/3912
摘要： A magneto-resistive element includes a lower magnetic shield film and a magneto-resistive film disposed above the lower magnetic shield film. The lower magnetic shield film includes a lower shield layer and an upper shield layer. The upper shield layer is amorphous or microcrystalline, made of a NiFe or CoFe composition containing B or P, and deposited on the lower shield layer. The lower shield layer is a magnetic conductive layer which is amorphous or microcrystalline with a crystal grain size equal to or less than 20 nm.
摘要翻译：磁阻元件包括下磁屏蔽膜和设置在下磁屏蔽膜上方的磁阻膜。下磁屏蔽膜包括下屏蔽层和上屏蔽层。上屏蔽层是无定形或微晶的，由含有B或P的NiFe或CoFe组合物制成并沉积在下屏蔽层上。下屏蔽层是晶体尺寸等于或小于20nm的非晶或微晶的导电层。

6. 发明申请

US20070242391A1 MAGNETO-RESISTIVE ELEMENT, THIN FILM MAGNETIC HEAD, MAGNETIC HEAD DEVICE, AND MAGNETIC RECORDING/REPRODUCING APPARATUS 有权
标题翻译：磁电元件，薄膜磁头，磁头装置和磁记录/再现装置
公开(公告)号：US20070242391A1
公开(公告)日：2007-10-18
申请号：US11623493
申请日：2007-01-16
申请人： Atsushi YAMAGUCHI , Kei Hirata , Satoshi Miura , Yoshihiro Tsuchiya , Kiyoshi Noguchi
发明人： Atsushi YAMAGUCHI , Kei Hirata , Satoshi Miura , Yoshihiro Tsuchiya , Kiyoshi Noguchi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3967 , G11B5/11 , G11B5/3912
摘要： A magneto-resistive element includes a lower magnetic shield film and a magneto-resistive film disposed above the lower magnetic shield film. The lower magnetic shield film includes a lower shield layer and an upper shield layer. The upper shield layer is amorphous or microcrystalline, made of a NiFe or CoFe composition containing B or P, and deposited on the lower shield layer. The lower shield layer is a magnetic conductive layer which is amorphous or microcrystalline with a crystal grain size equal to or less than 20 nm.
摘要翻译：磁阻元件包括下磁屏蔽膜和设置在下磁屏蔽膜上方的磁阻膜。下磁屏蔽膜包括下屏蔽层和上屏蔽层。上屏蔽层是无定形或微晶的，由含有B或P的NiFe或CoFe组合物制成并沉积在下屏蔽层上。下屏蔽层是晶体尺寸等于或小于20nm的非晶或微晶的导电层。

7. 发明授权

US07881021B2 CPP type magnetoresistive device with biasing arrangement for ferromagnetic layers having respective magnetizations orthogonal to one another, and magnetic disk system using same 有权
标题翻译：具有用于具有彼此正交的相应磁化的铁磁层的偏置装置的CPP型磁阻器件，以及使用它们的磁盘系统
公开(公告)号：US07881021B2
公开(公告)日：2011-02-01
申请号：US12022538
申请日：2008-01-30
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3916 , G11B5/3932 , G11B5/3967
摘要： A magnetoresistive device with CPP structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer and a magnetization direction control area that extends further rearward from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer to produce magnetizations of the said first and second ferromagnetic layers which are antiparallel with each other; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions.
摘要翻译：一种具有CPP结构的磁阻器件，包括非磁性中间层，以及第一铁磁层和第二铁磁层，所述第一铁磁层和第二铁磁层层叠并形成有位于它们之间的所述非磁性中间层，其中所述第一和第二铁磁层中的每一个包括连接到所述非磁性中间层和从所述非磁性中间层的后端的位置向后延伸的磁化方向控制区域; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，以产生与所述第一和第二铁磁层反平行的所述第一和第二铁磁层的磁化彼此; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。

8. 发明申请

US20090180217A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型和磁盘系统的磁阻效应器件
公开(公告)号：US20090180217A1
公开(公告)日：2009-07-16
申请号：US12014575
申请日：2008-01-15
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Kiyoshi Noguchi
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive device comprising a magnetoresistive unit, an upper shield layer and a lower shield shield layer stacked such that the magnetoresistive unit is held between them. The magnetoresistive unit comprises a nonmagnetic metal intermediate layer, a first ferromagnetic layer and a second ferromagnetic layer stacked with the nonmagnetic metal intermediate layer in the middle. When no bias magnetic field is applied, the first and second ferromagnetic layers have mutually antiparallel magnetizations. The magnetoresistive unit further comprises first and second side shield layers, and first and second biasing layers located to be magnetically coupled to the first and second side shield layers, wherein magnetic fluxes fed from the bias magnetic fields pass through the first and second side shield layers positioned in proximity to the magnetoresistive unit such that the magnetizations of the first and second ferromagnetic layers become substantially orthogonal to each other.
摘要翻译：磁阻器件包括磁阻单元，上屏蔽层和下屏蔽屏蔽层，以便将磁阻单元保持在它们之间。磁阻单元包括在中间与非磁性金属中间层堆叠的非磁性金属中间层，第一铁磁层和第二铁磁层。当不施加偏置磁场时，第一和第二铁磁层具有相互反平行的磁化。磁阻单元还包括第一和第二侧屏蔽层，以及第一和第二偏置层，其被定位成磁耦合到第一和第二侧屏蔽层，其中从偏置磁场馈送的磁通量通过第一和第二侧屏蔽层位于磁阻单元附近，使得第一和第二铁磁层的磁化基本上彼此正交。

9. 发明授权

US07876534B2 Magneto-resistive effect device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻效应器，磁盘系统
公开(公告)号：US07876534B2
公开(公告)日：2011-01-25
申请号：US12014575
申请日：2008-01-15
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Kiyoshi Noguchi
IPC分类号： G11B5/11 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive device comprising a magnetoresistive unit, an upper shield layer and a lower shield layer stacked such that the magnetoresistive unit is held between them. The magnetoresistive unit comprises a nonmagnetic metal intermediate layer, a first ferromagnetic layer and a second ferromagnetic layer stacked with the nonmagnetic metal intermediate layer in the middle. When no bias magnetic field is applied, the first and second ferromagnetic layers have mutually antiparallel magnetizations. The magnetoresistive unit further comprises first and second side shield layers, and first and second biasing layers located to be magnetically coupled to the first and second side shield layers, wherein magnetic fluxes fed from the bias magnetic fields pass through the first and second side shield layers positioned in proximity to the magnetoresistive unit such that the magnetizations of the first and second ferromagnetic layers become substantially orthogonal to each other.
摘要翻译：磁阻器件包括磁阻单元，上屏蔽层和下屏蔽层，以使磁阻单元保持在它们之间。磁阻单元包括在中间与非磁性金属中间层堆叠的非磁性金属中间层，第一铁磁层和第二铁磁层。当不施加偏置磁场时，第一和第二铁磁层具有相互反平行的磁化。磁阻单元还包括第一和第二侧屏蔽层，以及第一和第二偏置层，其被定位成磁耦合到第一和第二侧屏蔽层，其中从偏置磁场馈送的磁通量通过第一和第二侧屏蔽层位于磁阻单元附近，使得第一和第二铁磁层的磁化基本上彼此正交。

10. 发明申请

US20090190270A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型和磁盘系统的磁阻效应器件
公开(公告)号：US20090190270A1
公开(公告)日：2009-07-30
申请号：US12022538
申请日：2008-01-30
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3916 , G11B5/3932 , G11B5/3967
摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.
摘要翻译：本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

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