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1. 发明授权

US08835257B2 Method of fabricating semiconductor device including a recessed channel 有权
标题翻译：制造包括凹陷通道的半导体器件的方法
公开(公告)号：US08835257B2
公开(公告)日：2014-09-16
申请号：US13312176
申请日：2011-12-06
申请人： Young-Pil Kim , Hyung-Ik Lee , Woo-Sung Jeon , Ki-Hong Kim , Jung-Yun Won , In-Sun Jung
发明人： Young-Pil Kim , Hyung-Ik Lee , Woo-Sung Jeon , Ki-Hong Kim , Jung-Yun Won , In-Sun Jung
IPC分类号： H01L21/762 , H01L27/105 , H01L27/108
CPC分类号： H01L27/1052 , H01L21/76224 , H01L27/10876
摘要： A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.
摘要翻译：一种包括形成隔离沟槽的方法; 在隔离槽上形成第一和第二衬垫; 将绝缘沟槽填充绝缘材料以形成隔离区域和有源区域; 形成包括隔离区域的第一区域的初步栅极沟槽，以露出第一衬垫，第二衬垫和绝缘材料，以及横跨有源区域的第二区域以暴露衬底的一部分，第一区域具有第一侧壁具有平面形状，并且所述第二区域具有第二侧壁，所述第二侧壁具有凹形中心区域，使得所述第一和第二区域之间的界面具有尖锐部分; 去除由所述第一区域暴露的所述第一衬垫的一部分以形成具有所述尖部突出的第一深度的凹陷; 去除尖部以形成栅沟; 并形成栅电极。

2. 发明申请

US20120231605A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING A RECESSED CHANNEL 有权
标题翻译：制造包含通道的半导体器件的方法
公开(公告)号：US20120231605A1
公开(公告)日：2012-09-13
申请号：US13312176
申请日：2011-12-06
申请人： Young-Pil KIM , Hyung-Ik Lee , Woo-Sung Jeon , Ki-Hong Kim , Jung-Yun Won , In-Sun Jung
发明人： Young-Pil KIM , Hyung-Ik Lee , Woo-Sung Jeon , Ki-Hong Kim , Jung-Yun Won , In-Sun Jung
IPC分类号： H01L21/762
CPC分类号： H01L27/1052 , H01L21/76224 , H01L27/10876
摘要： A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.
摘要翻译：一种包括形成隔离沟槽的方法; 在隔离沟槽上形成第一和第二衬垫; 将绝缘沟槽填充绝缘材料以形成隔离区域和有源区域; 形成包括隔离区域的第一区域的初步栅极沟槽，以露出第一衬垫，第二衬垫和绝缘材料，以及横跨有源区域的第二区域以暴露衬底的一部分，第一区域具有第一侧壁具有平面形状，并且所述第二区域具有第二侧壁，所述第二侧壁具有凹形中心区域，使得所述第一和第二区域之间的界面具有尖锐部分; 去除由所述第一区域暴露的所述第一衬垫的一部分以形成具有所述尖部突出的第一深度的凹陷; 去除尖部以形成栅沟; 并形成栅电极。

3. 发明申请

US20070134880A1 Field effect transistors having elevated source/drain regions and methods of manufacturing the same 有权
标题翻译：具有升高的源极/漏极区域的场效应晶体管及其制造方法
公开(公告)号：US20070134880A1
公开(公告)日：2007-06-14
申请号：US11636139
申请日：2006-12-08
申请人： Min-Gu Kang , Ki-Hong Kim , Jin-Bum Kim , Jung-Yun Won , In-Sun Jung
发明人： Min-Gu Kang , Ki-Hong Kim , Jin-Bum Kim , Jung-Yun Won , In-Sun Jung
IPC分类号： H01L21/336
CPC分类号： H01L29/66628 , H01L21/0242 , H01L21/02458 , H01L21/02491 , H01L21/0254 , H01L21/0262 , H01L21/02636 , H01L21/02642 , H01L21/02664 , H01L21/26513 , H01L27/10873 , H01L29/517
摘要： Methods of manufacturing a field effect transistor include forming a gate pattern on a substrate. A gate spacer is formed on a sidewall of the gate pattern. A first layer is formed from a surface of the substrate and contacting the gate spacer using a first selective epitaxial growth (SEG) process at a first temperature. A second layer is formed from a surface of the first layer and contacting the gate spacer using a second SEG process at a second temperature. The second temperature is lower than the first temperature. The first and second layers define elevated source/drain regions.
摘要翻译：制造场效应晶体管的方法包括在衬底上形成栅极图案。栅极间隔物形成在栅极图案的侧壁上。第一层由衬底的表面形成并且在第一温度下使用第一选择性外延生长（SEG）工艺与栅极间隔物接触。第二层由第一层的表面形成，并在第二温度下使用第二SEG工艺与栅极间隔物接触。第二个温度低于第一个温度。第一和第二层限定升高的源极/漏极区域。

4. 发明授权

US07595246B2 Methods of manufacturing field effect transistors having elevated source/drain regions 有权
标题翻译：制造具有升高的源极/漏极区域的场效应晶体管的方法
公开(公告)号：US07595246B2
公开(公告)日：2009-09-29
申请号：US11636139
申请日：2006-12-08
申请人： Min-Gu Kang , Ki-Hong Kim , Jin-Bum Kim , Jung-Yun Won , In-Sun Jung
发明人： Min-Gu Kang , Ki-Hong Kim , Jin-Bum Kim , Jung-Yun Won , In-Sun Jung
IPC分类号： H01L21/336
CPC分类号： H01L29/66628 , H01L21/0242 , H01L21/02458 , H01L21/02491 , H01L21/0254 , H01L21/0262 , H01L21/02636 , H01L21/02642 , H01L21/02664 , H01L21/26513 , H01L27/10873 , H01L29/517
摘要： Methods of manufacturing a field effect transistor include forming a gate pattern on a substrate. A gate spacer is formed on a sidewall of the gate pattern. A first layer is formed from a surface of the substrate and contacting the gate spacer using a first selective epitaxial growth (SEG) process at a first temperature. A second layer is formed from a surface of the first layer and contacting the gate spacer using a second SEG process at a second temperature. The second temperature is lower than the first temperature. The first and second layers define elevated source/drain regions.
摘要翻译：制造场效应晶体管的方法包括在衬底上形成栅极图案。栅极间隔物形成在栅极图案的侧壁上。第一层由衬底的表面形成并且在第一温度下使用第一选择性外延生长（SEG）工艺与栅极间隔物接触。第二层由第一层的表面形成，并在第二温度下使用第二SEG工艺与栅极间隔物接触。第二个温度低于第一个温度。第一层和第二层限定升高的源/漏区。

5. 发明申请

US20100197089A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH METAL-SEMICONDUCTOR COMPOUND SOURCE/DRAIN CONTACT REGIONS 审中-公开
标题翻译：用金属半导体复合源/漏极接触区制造半导体器件的方法
公开(公告)号：US20100197089A1
公开(公告)日：2010-08-05
申请号：US12699491
申请日：2010-02-03
申请人： Jin-Bum Kim , Yu-Gyun Shin , Jung-Yun Won , In-Sun Jung , Jun-Ho Lee
发明人： Jin-Bum Kim , Yu-Gyun Shin , Jung-Yun Won , In-Sun Jung , Jun-Ho Lee
IPC分类号： H01L21/8238
CPC分类号： H01L21/823814 , H01L21/28518 , H01L21/28525 , H01L21/2855 , H01L21/32053 , H01L21/76814 , H01L21/76838 , H01L21/76843 , H01L21/76855 , H01L21/76897 , H01L21/823871 , H01L23/53238 , H01L23/53266 , H01L29/665 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： Methods of fabricating semiconductor devices include forming a transistor on and/or in a semiconductor substrate, wherein the transistor includes a source/drain region and a gate pattern disposed on a channel region adjacent the source/drain region. An insulating layer is formed on the transistor and patterned to expose the source/drain region. A semiconductor source layer is formed on the exposed source/drain region and on an adjacent portion of the insulating layer. A metal source layer is formed on the semiconductor source layer. Annealing, is performed to form a first metal-semiconductor compound region on the source/drain region and a second metal-semiconductor compound region on the adjacent portion of the insulating layer. The first metal-semiconductor compound region may be thicker than the second metal-semiconductor compound region. The metal source layer may include a metal layer and a metal nitride barrier layer.
摘要翻译：制造半导体器件的方法包括在半导体衬底上和/或半导体衬底中形成晶体管，其中晶体管包括源极/漏极区域和设置在与源极/漏极区域相邻的沟道区域上的栅极图案。在晶体管上形成绝缘层并图案化以暴露源/漏区域。在暴露的源极/漏极区域和绝缘层的相邻部分上形成半导体源极层。在半导体源层上形成金属源层。进行退火以在源极/漏极区域上形成第一金属 - 半导体化合物区域和在绝缘层的相邻部分上形成第二金属 - 半导体化合物区域。第一金属 - 半导体化合物区域可以比第二金属 - 半导体化合物区域厚。金属源层可以包括金属层和金属氮化物阻挡层。

6. 发明授权

US06639069B2 Method of preparing and uses of cucurbituril devices 有权
标题翻译：制备和使用葫芦素装置的方法
公开(公告)号：US06639069B2
公开(公告)日：2003-10-28
申请号：US10092468
申请日：2002-03-08
申请人： Kimoon Kim , Jaheon Kim , In-Sun Jung , Soo-Young Kim , Eunsung Lee , Jin-Koo Kang
发明人： Kimoon Kim , Jaheon Kim , In-Sun Jung , Soo-Young Kim , Eunsung Lee , Jin-Koo Kang
IPC分类号： C07D24504
CPC分类号： C07D245/04 , B01D53/34 , B01D53/50 , B01D53/56 , B01D53/62 , B01J31/0237 , B01J31/0247 , B01J31/0249 , B01J31/0251 , C02F1/58 , C07D487/22 , Y02C10/08
摘要： Cucurbituril derivatives, their preparation methods and uses. The cucurbituril derivatives have the formula (1) where X is O, S or NH; R1 and R2 are independently selected from the group consisting of hydrogen, alkyl groups of 1 to 30 carbon atoms, alkenyl groups of 1 to 30 carbon atoms, alkynyl groups of 1 to 30 carbon atoms, alkylthio groups of 1 to 30 carbon atoms, alkylcarboxyl groups of 1 to 30 carbon atoms, hydroxyalkyl groups of 1 to 30 carbon atoms, alkylsilyl groups of 1 to 30 carbon atoms, alkoxy groups of 1 to 30 carbon atoms, haloalkyl groups of 1 to 30 carbon atoms, nitro group, alkylamine groups of 1 to 30 carbon atoms, amine group, aminoalkyl groups of 1 to 30 carbon atoms, unsubstituted cycloalkyl groups of 5 to 30 carbon atoms, cycloalkyl groups of 4 to 30 carbon atoms with hetero atoms, unsubstituted aryl groups of 6 to 30 carbon atoms, and aryl groups of 6 to 30 carbon atoms with hetero atoms; and n is an integer from 4 to 20, wherein the cucurbituril derivatives having the formula (1), where n=6, R1=H, R2=H and X=O, and n=5, R1=CH3, R2=H and X=O, are excluded. The cucurbituril derivatives are easily prepared as a mixture by one of the three new methods, and each cucurbituril derivative can be separated from the mixture by fractional crystallization. The cucurbituril derivatives having the formula (1) or their mixtures are very useful in removing dyes and heavy metal ions dissolved in water or waste water.
摘要翻译：葫芦素衍生物，其制备方法和用途。葫芦巴衍生物具有式（1）其中X是O，S或NH; R1和R2独立地选自氢，1〜30个碳原子的烷基，1〜30个碳原子的烯基，1〜30个碳原子的炔基，1〜30个碳原子的烷硫基，烷基羧基 1〜30个碳原子的基团，1〜30个碳原子的羟基烷基，1〜30个碳原子的烷基甲硅烷基，1〜30个碳原子的烷氧基，1〜30个碳原子的卤代烷基，硝基， 1至30个碳原子，胺基，1至30个碳原子的氨基烷基，5至30个碳原子的未取代环烷基，4至30个碳原子的杂原子环烷基，6至30个碳原子的未取代芳基，和具有6-10个碳原子的杂原子的芳基; n为4〜20的整数，式中，n = 6，R1 = H，R2 = H，X = O，n = 5，R1 = CH3，R2 = H的葫芦巴脲衍生物和X = O。通过三种新方法之一容易地制备葫芦巴脲衍生物作为混合物，并且可以通过分级结晶从混合物中分离出每种葫芦巴脲衍生物。具有式（1）的葫芦巴衍生物或其混合物非常适用于去除溶于水或废水中的染料和重金属离子。

7. 发明申请

US20100167212A1 RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME 审中-公开
标题翻译：耐蚀组合物及使用其制造集成电路装置的方法
公开(公告)号：US20100167212A1
公开(公告)日：2010-07-01
申请号：US12654742
申请日：2009-12-30
申请人： Hyeon-Mo Cho , Sang-Kyun Kim , Mi-Young Kim , Sang-Ran Koh , Hui-Chang Yun , Yong-Jin Chung , Jong-Seob Kim , In-Sun Jung
发明人： Hyeon-Mo Cho , Sang-Kyun Kim , Mi-Young Kim , Sang-Ran Koh , Hui-Chang Yun , Yong-Jin Chung , Jong-Seob Kim , In-Sun Jung
IPC分类号： G03F7/20 , C08L61/00 , C08L83/00 , C08K5/3432 , C08G77/00
CPC分类号： G03F7/11 , C08K5/54 , G03F7/0752
摘要： A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the resist underlayer composition including a solvent and an organosilane-based polymer, the organosilane-based polymer being a polymerization product of at least one first compound represented Chemical Formulae 1 to 3 and at least one second compound represented by Chemical Formulae 4 and 5.
摘要翻译：抗蚀剂下层组合物和半导体集成电路器件的制造方法，所述抗蚀剂底层组合物包含溶剂和有机硅烷系聚合物，所述有机硅烷类聚合物为至少一种化学式1〜3的第一化合物的聚合产物和由化学式4和5表示的至少一种第二化合物。

8. 发明授权

US07160466B2 Uses of cucurbituril devices 有权
标题翻译：使用葫芦素装置
公开(公告)号：US07160466B2
公开(公告)日：2007-01-09
申请号：US10646722
申请日：2003-08-25
申请人： Kimoon Kim , Jaheon Kim , In-Sun Jung , Soo-Young Kim , Eunsung Lee , Jin-Koo Kang
发明人： Kimoon Kim , Jaheon Kim , In-Sun Jung , Soo-Young Kim , Eunsung Lee , Jin-Koo Kang
IPC分类号： C02F1/58 , C02F1/62
CPC分类号： C07D245/04 , B01D53/34 , B01D53/50 , B01D53/56 , B01D53/62 , B01J31/0237 , B01J31/0247 , B01J31/0249 , B01J31/0251 , C02F1/58 , C07D487/22 , Y02C10/08
摘要： Uses of cucurbituril derivatives are disclosed. The cucurbituril derivatives have the formula (1) where X is O, S or NH; R1 and R2 are independently selected from the group consisting of hydrogen, alkyl groups of 1 to 30 carbon atoms, alkenyl groups of 1 to 30 carbon atoms, alkynyl groups of 1 to 30 carbon atoms, alkylthio groups of 1 to 30 carbon atoms, alkylcarboxyl groups of 1 to 30 carbon atoms, hydroxyalkyl groups of 1 to 30 carbon atoms, alkylsilyl groups of 1 to 30 carbon atoms, alkoxy groups of 1 to 30 carbon atoms, haloalkyl groups of 1 to 30 carbon atoms, nitro group, alkylamine groups of 1 to 30 carbon atoms, amine group, aminoalkyl groups of 1 to 30 carbon atoms, unsubstituted cycloalkyl groups of 5 to 30 carbon atoms, cycloalkyl groups of 4 to 30 carbon atoms with hetero atoms, unsubstituted aryl groups of 6 to 30 carbon atoms, and aryl groups of 6 to 30 carbon atoms with hetero atoms; and n is an integer from 4 to 20 , wherein the cucurbituril derivatives having the formula (1), where n=6 , R1=H, R2=H and X=O, and n=5 , R1=CH3, R2=H and X=O, are excluded. The cucurbituril derivatives are easily prepared as a mixture by one of the three new methods, and each cucurbituril derivative can be separated from the mixture by fractional crystallization. The cucurbituril derivatives having the formula (1) or their mixtures are very useful in removing dyes and heavy metal ions dissolved in water or waste water.
摘要翻译：披露了葫芦素衍生物的用途。葫芦巴衍生物具有式（1）其中X是O，S或NH; R 1和R 2独立地选自氢，碳原子数1〜30的烷基，碳原子数1〜30的烯基，炔基， 1至30个碳原子，1至30个碳原子的烷硫基，1至30个碳原子的烷基羧基，1至30个碳原子的羟基烷基，1至30个碳原子的烷基甲硅烷基，1至30个碳原子的烷氧基 1〜30个碳原子的卤代烷基，硝基，1〜30个碳原子的烷基胺基，1〜30个碳原子的氨基烷基，5〜30个碳原子的未取代环烷基，4-30个碳原子的环烷基具有杂原子的碳原子，6至30个碳原子的未取代芳基和6至30个碳原子的芳基与杂原子; 并且n为4至20的整数，其中具有式（1）的葫芦脲衍生物，其中n = 6，R 1 = H，R 2 H = H和 X = O，n = 5，R 1 = CH 3，R 2 = H，X = O。通过三种新方法之一容易地制备葫芦巴脲衍生物作为混合物，并且可以通过分级结晶从混合物中分离出每种葫芦巴脲衍生物。具有式（1）的葫芦巴衍生物或其混合物非常适用于去除溶于水或废水中的染料和重金属离子。

9. 发明申请

US20050048368A1 Binder and electrode for lithium battery, and lithium battery containing the same 有权
标题翻译：锂电池的粘结剂和电极，以及含有锂电池的锂电池
公开(公告)号：US20050048368A1
公开(公告)日：2005-03-03
申请号：US10922919
申请日：2004-08-23
申请人： In-Sun Jung , Jin-Hwan Park
发明人： In-Sun Jung , Jin-Hwan Park
IPC分类号： C08F14/22 , H01M4/13 , H01M4/131 , H01M4/133 , H01M4/134 , H01M4/136 , H01M4/139 , H01M4/38 , H01M4/58 , H01M4/587 , H01M4/60 , H01M4/62 , H01M4/66 , H01M10/05 , H01M10/052 , H01M10/0525 , H01M10/0569
CPC分类号： H01M10/052 , C08F14/22 , H01M4/04 , H01M4/0402 , H01M4/0404 , H01M4/0409 , H01M4/0416 , H01M4/13 , H01M4/133 , H01M4/134 , H01M4/136 , H01M4/139 , H01M4/621 , H01M4/623 , H01M4/625 , H01M4/626 , H01M4/661
摘要： A lithium battery binder includes polyvinylidenefluoride(PVDF) having an IR absorption peak ratio of Iγ in a range from 0.35 to 1.00, wherein Iγ is equal to I820-850/I860-880 where I820-850 is a peak height resulting from a CH2 rocking band in γ-phase PVDF and I860-880 is a peak height resulting from backbones in α- and γ-phase PVDF. The lithium battery containing the cathode and/or the anode which incorporates the binder improves the charge/discharge characteristics and the lifespan characteristics of a lithium battery.
摘要翻译：锂电池粘合剂包括具有0.35至1.00范围内的Igamma的IR吸收峰值比的聚偏二氟乙烯（PVDF），其中Igamma等于I820-850 / I860-880，其中I820-850是由CH2摇摆产生的峰高 γ相PVDF中的带和I860-880是由α相和γ相PVDF中的骨架产生的峰高。包含结合有粘合剂的阴极和/或阳极的锂电池改善了锂电池的充电/放电特性和使用寿命特性。

10. 发明授权

US07700225B2 Binder and electrode for lithium battery, and lithium battery containing the same 有权
标题翻译：锂电池的粘结剂和电极，以及含有锂电池的锂电池
公开(公告)号：US07700225B2
公开(公告)日：2010-04-20
申请号：US10922919
申请日：2004-08-23
申请人： In-Sun Jung , Jin-Hwan Park
发明人： In-Sun Jung , Jin-Hwan Park
IPC分类号： H01M6/00 , H01M10/00 , H01M4/62 , H01M4/02 , C08F14/18 , C08F144/18 , C08F214/18
CPC分类号： H01M10/052 , C08F14/22 , H01M4/04 , H01M4/0402 , H01M4/0404 , H01M4/0409 , H01M4/0416 , H01M4/13 , H01M4/133 , H01M4/134 , H01M4/136 , H01M4/139 , H01M4/621 , H01M4/623 , H01M4/625 , H01M4/626 , H01M4/661
摘要： A lithium battery binder includes polyvinylidenefluoride(PVDF) having an IR absorption peak ratio of Iγ in a range from 0.35 to 1.00, wherein Iγ is equal to I820-850/I860-880 where I820-850 is a peak height resulting from a CH2 rocking band in γ-phase PVDF and I860-880 is a peak height resulting from backbones in α- and γ-phase PVDF. The lithium battery containing the cathode and/or the anode which incorporates the binder improves the charge/discharge characteristics and the lifespan characteristics of a lithium battery.
摘要翻译：锂电池粘合剂包括IR吸收峰值比为Iγ在0.35至1.00的范围内的聚偏二氟乙烯（PVDF），其中Iγ等于I820-850 / I860-880，其中I820-850是由CH2摇摆产生的峰高 γ相PVDF中的带和I860-880是由α-和γ相PVDF中的骨架产生的峰高。包含结合有粘合剂的阴极和/或阳极的锂电池改善了锂电池的充电/放电特性和使用寿命特性。

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