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    • 8. 发明授权
    • Method and lithographic structure for measuring lengths of lines and spaces
    • 测量线和空间长度的方法和光刻结构
    • US07393619B2
    • 2008-07-01
    • US10840922
    • 2004-05-07
    • Yuji Yamaguchi
    • Yuji Yamaguchi
    • G03F9/00
    • G03F7/70683G03F1/44G03F7/70625
    • There is a structure and method for measuring the lengths of lines and spaces in semiconductor process. In an example embodiment, a lithographic structure (400) comprises, a frame (450). The frame includes a top inside edge, a top outside edge, a bottom inside edge, a bottom outside edge, a left inside edge, a left outside edge, a right inside edge, and a right outside edge. There is a first array of lines (430) and spaces, the first array having end of lines (420b) and end of spaces (430a). The lines have a first line width and the spaces have a first space width; the end of spaces are at a first distance (10) from the top outside edge of the frame (450), the end of lines are at a second distance (20) from the top outside edge of the frame (450). A first opening (410a) is a third distance (30) from the bottom outside edge of the frame and a second opening (410b) is a fourth distance (40) from the bottom outside edge of the frame.
    • 存在用于测量半导体工艺中的线和间隔的长度的结构和方法。 在示例性实施例中,光刻结构(400)包括框架(450)。 框架包括顶部内部边缘,顶部外部边缘,底部内侧边缘,底部外侧边缘,左内侧边缘,左外侧边缘,右内侧边缘和右外边缘。 存在第一阵列(430)和空格,第一阵列具有行末端(420b)和空格末端(430a)。 这些线具有第一行宽度,并且空格具有第一空格宽度; 空间的端部与框架(450)的顶部外边缘相距第一距离(10),线的端部距离框架(450)的顶部外侧边缘的第二距离(20)。 第一开口(410a)是距离框架的底部外边缘的第三距离(30),并且第二开口(410b)是距离框架的底部外边缘的第四距离(40)。