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1. 发明授权

US08208304B2 Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N 有权
标题翻译：在N位/单元模拟存储单元器件中以M位/单元密度存储，M> N
公开(公告)号：US08208304B2
公开(公告)日：2012-06-26
申请号：US12618732
申请日：2009-11-15
申请人： Ofir Shalvi , Naftali Sommer , Uri Perlmutter , Dotan Sokolov
发明人： Ofir Shalvi , Naftali Sommer , Uri Perlmutter , Dotan Sokolov
IPC分类号： G11C16/04
CPC分类号： G06F11/1068 , G11C11/5628 , G11C11/5642 , G11C16/26 , G11C27/005 , G11C2211/5641
摘要： A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.
摘要翻译：一种用于数据存储的方法包括接收用于存储在包括多个模拟存储器单元的存储器中的数据，并且支持一组内置的编程命令。每个编程命令在存储器单元的子集中编写从一组N页中选择的相应页面。存储器单元的子集被编程为通过执行仅从集合中绘制的编程命令的序列来存储数据的M页M> N。

2. 发明授权

US08174857B1 Efficient readout schemes for analog memory cell devices using multiple read threshold sets 有权
标题翻译：使用多个读取阈值集的模拟存储器单元器件的高效读出方案
公开(公告)号：US08174857B1
公开(公告)日：2012-05-08
申请号：US12649360
申请日：2009-12-30
申请人： Naftali Sommer , Uri Perlmutter
发明人： Naftali Sommer , Uri Perlmutter
IPC分类号： G11C27/00
CPC分类号： G11C11/5642
摘要： A method for data readout includes storing two or more candidate sets of read thresholds for reading from a memory device that includes a plurality of analog memory cells. A group of the memory cells from which data is to be read is identified. An order is defined among the candidate sets of the read thresholds responsively to a criterion defined over the group of the memory cells. Data readout from the group of the memory cells is attempted by iterating over the candidate sets according to the order, until the data is read successfully.
摘要翻译：一种用于数据读出的方法包括从包括多个模拟存储器单元的存储器件存储用于读取的两个或更多个用于读取的候选读取阈值组。识别要从中读取数据的一组存储单元。响应于在存储器单元组上定义的标准，在读取阈值的候选组中定义顺序。通过根据顺序迭代候选集来尝试来自存储器单元组的数据读取，直到数据被成功读取。

3. 发明授权

US08156398B2 Parameter estimation based on error correction code parity check equations 有权
标题翻译：基于纠错码奇偶校验方程的参数估计
公开(公告)号：US08156398B2
公开(公告)日：2012-04-10
申请号：US12364531
申请日：2009-02-03
申请人： Naftali Sommer
发明人： Naftali Sommer
IPC分类号： H03M13/00
CPC分类号： H03M13/3738 , G06F11/1072 , G11C16/3418 , G11C29/021 , G11C29/028 , G11C29/42 , H03M13/1102 , H03M13/15 , H03M13/1515 , H03M13/152 , H03M13/19 , H03M13/3723 , H03M13/3746 , H03M13/6325
摘要： A method for operating a memory, which includes analog memory cells, includes encoding data with an Error Correction Code (ECC) that is representable by a plurality of equations. The encoded data is stored in a group of the analog memory cells by writing respective input storage values to the memory cells in the group. Multiple sets of output storage values are read from the memory cells in the group using one or more different, respective read parameters for each set. Numbers of the equations, which are satisfied by the respective sets of the output storage values, are determined. A preferred setting of the read parameters is identified responsively to the respective numbers of the satisfied equations. The memory is operated on using the preferred setting of the read parameters.
摘要翻译：一种用于操作包括模拟存储器单元的存储器的方法，包括用可由多个等式表示的纠错码（ECC）编码数据。通过将相应的输入存储值写入组中的存储器单元，将编码数据存储在一组模拟存储器单元中。从组中的存储器单元读取多组输出存储值，使用每组的一个或多个不同的相应读取参数。确定由各组输出存储值所满足的等式的数量。读取参数的优选设置是响应于所满足的等式的相应数量来确定的。使用读取参数的首选设置来操作存储器。

4. 发明申请

US20120026789A1 DISTORTION ESTIMATION AND CANCELLATION IN MEMORY DEVICES 有权
标题翻译：存储器件中的失真估计和消除
公开(公告)号：US20120026789A1
公开(公告)日：2012-02-02
申请号：US13239411
申请日：2011-09-22
申请人： Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Ariel Maislos
发明人： Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Ariel Maislos
IPC分类号： G11C16/06
CPC分类号： G06F11/1068 , G06F11/1016 , G11C16/26
摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.
摘要翻译：用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。在存储数据之后，从相应的模拟存储器单元读取第二电压电平。第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

5. 发明授权

US08085586B2 Wear level estimation in analog memory cells 有权
标题翻译：模拟记忆体中的磨损水平估计
公开(公告)号：US08085586B2
公开(公告)日：2011-12-27
申请号：US12344233
申请日：2008-12-25
申请人： Oren Golov , Eyal Gurgi , Dotan Sokolov , Yoav Kasoria , Shai Winter
发明人： Oren Golov , Eyal Gurgi , Dotan Sokolov , Yoav Kasoria , Shai Winter
IPC分类号： G11C16/04
CPC分类号： G11C27/005 , G11C16/349 , G11C16/3495
摘要： A method for operating a memory includes applying at least one pulse to a group of analog memory cells, so as to cause the memory cells in the group to assume respective storage values. After applying the pulse, the respective storage values are read from the memory cells in the group. One or more statistical properties of the read storage values are computed. A wear level of the group of the memory cells is estimated responsively to the statistical properties.
摘要翻译：一种用于操作存储器的方法包括将至少一个脉冲施加到一组模拟存储器单元，以便使该组中的存储器单元呈现相应的存储值。在应用脉冲之后，从组中的存储器单元读取相应的存储值。计算读取存储值的一个或多个统计属性。响应于统计属性来估计存储器单元组的磨损水平。

6. 发明授权

US07975192B2 Reading memory cells using multiple thresholds 有权
标题翻译：使用多个阈值读取存储单元
公开(公告)号：US07975192B2
公开(公告)日：2011-07-05
申请号：US11995814
申请日：2007-10-30
申请人： Naftali Sommer , Ofir Shalvi , Dotan Sokolov
发明人： Naftali Sommer , Ofir Shalvi , Dotan Sokolov
IPC分类号： G11C29/42 , G11C29/50
CPC分类号： G06F11/1068 , G11C8/20 , G11C11/56 , G11C11/5642 , G11C27/005
摘要： A method for operating a memory (28) includes storing data, which is encoded with an Error Correction Code (ECC), in analog memory cells (32) of the memory by writing respective analog input values selected from a set of nominal values to the analog memory cells. The stored data is read by performing multiple read operations that compare analog output values of the analog memory cells to different, respective read thresholds so as to produce multiple comparison results for each of the analog memory cells. At least two of the read thresholds are positioned between a pair of the nominal values that are adjacent to one another in the set of the nominal values. Soft metrics are computed responsively to the multiple comparison results. The ECC is decoded using the soft metrics, so as to extract the data stored in the analog memory cells.
摘要翻译：一种用于操作存储器（28）的方法包括：通过将从一组标称值中选择的相应模拟输入值写入到存储器的模拟存储器单元（32）中来存储用错误校正码（ECC）编码的数据，模拟存储单元。通过执行将模拟存储器单元的模拟输出值与不同的相应读取阈值进行比较的多个读取操作来读取存储的数据，以便为每个模拟存储器单元产生多个比较结果。读取阈值中的至少两个位于在标称值的集合中彼此相邻的一对标称值之间。响应于多个比较结果计算软指标。使用软指标对ECC进行解码，以便提取存储在模拟存储单元中的数据。

7. 发明授权

US07900102B2 High-speed programming of memory devices 有权
标题翻译：高速编程存储器件
公开(公告)号：US07900102B2
公开(公告)日：2011-03-01
申请号：US11957970
申请日：2007-12-17
申请人： Dotan Sokolov , Ofir Shalvi
发明人： Dotan Sokolov , Ofir Shalvi
IPC分类号： G11C29/34 , G11C29/54
CPC分类号： G11C11/5628 , G06F11/1072 , G11C11/5642 , G11C27/005 , G11C29/00 , G11C2211/5621
摘要： A method for operating a memory that includes a plurality of analog memory cells includes storing data in a first group of the memory cells by writing respective first cell values to the memory cells in the first group. After storing the data, respective second cell values are read from the memory cells in the first group, and differences are found between the respective first and second cell values for each of one or more of the memory cells in the first group. The differences are processed to produce error information, and the error information is stored in a second group of the memory cells.
摘要翻译：一种用于操作包括多个模拟存储器单元的存储器的方法包括通过将相应的第一单元值写入第一组中的存储器单元来将数据存储在第一组存储器单元中。在存储数据之后，从第一组中的存储器单元读取相应的第二单元值，并且在第一组中的一个或多个存储器单元中的每一个的相应的第一和第二单元值之间找到差异。处理差异以产生错误信息，并且将错误信息存储在第二组存储器单元中。

8. 发明授权

US07821826B2 Memory cell readout using successive approximation 有权
标题翻译：使用逐次逼近的存储单元读数
公开(公告)号：US07821826B2
公开(公告)日：2010-10-26
申请号：US11995805
申请日：2007-10-30
申请人： Ofir Shalvi , Naftali Sommer
发明人： Ofir Shalvi , Naftali Sommer
IPC分类号： G11C16/04
CPC分类号： G11C16/26 , G11C7/16 , G11C11/5642 , G11C16/24 , G11C27/005
摘要： A method for operating a memory (20) includes storing analog values in an array of analog memory cells (22), so that each of the analog memory cells holds an analog value corresponding to at least first and second respective bits. A first indication of the analog value stored in a given analog memory cell is obtained using a first set of sampling parameters. A second indication of the analog value stored in the given analog memory cell is obtained using a second set of sampling parameters, which is dependent upon the first indication. The first and second respective bits are read out from the given analog memory cell responsively to the first and second indications.
摘要翻译：一种用于操作存储器（20）的方法包括将模拟值存储在模拟存储器单元（22）的阵列中，使得每个模拟存储器单元保持与至少第一和第二相应位对应的模拟值。使用第一组采样参数获得存储在给定模拟存储器单元中的模拟值的第一指示。使用取决于第一指示的第二组采样参数来获得存储在给定模拟存储器单元中的模拟值的第二指示。响应于第一和第二指示，从给定的模拟存储单元读出第一和第二各自的位。

9. 发明申请

US20100157675A1 PROGRAMMING ORDERS FOR REDUCING DISTORTION IN ARRAYS OF MULTI-LEVEL ANALOG MEMORY CELLS 有权
标题翻译：用于减少多级模拟记忆细胞阵列失真的编程方式
公开(公告)号：US20100157675A1
公开(公告)日：2010-06-24
申请号：US12721585
申请日：2010-03-11
申请人： Ofir Shalvi , Eyal Gurgi , Uri Perlmutter , Oren Golov
发明人： Ofir Shalvi , Eyal Gurgi , Uri Perlmutter , Oren Golov
IPC分类号： G11C16/04
CPC分类号： G11C16/3418 , G11C11/56 , G11C16/04 , G11C27/005 , G11C2211/5641
摘要： A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order.
摘要翻译：一种用于数据存储的方法包括预先定义以行排列的多个模拟存储器单元的编程顺序。该顺序指定对于在第一和第二侧具有相邻行的给定行，只有当至少一个侧面上的相邻行中的存储器单元处于擦除状态时，给定行中的存储器单元被编程，并且该给定行中的存储器单元被编程为假设最高编程电平，其对应于单元的编程电平中的最大模拟值，只有在编程给定行中的所有存储器单元之后才采用除最高水平。根据预定义的顺序对存储器单元进行编程，将数据存储在存储器单元中。

10. 发明申请

US20090158126A1 EFFICIENT INTERFERENCE CANCELLATION IN ANALOG MEMORY CELL ARRAYS 有权
标题翻译：在模拟存储器单元阵列中有效的干扰消除
公开(公告)号：US20090158126A1
公开(公告)日：2009-06-18
申请号：US12332368
申请日：2008-12-11
申请人： Uri Perlmutter , Yoav Kasorla , Oren Golov
发明人： Uri Perlmutter , Yoav Kasorla , Oren Golov
IPC分类号： G11C29/52 , G06F12/02 , G06F11/10
CPC分类号： G06F11/1072 , G11C11/56 , G11C11/5628 , G11C11/5642 , G11C16/04 , G11C16/3418 , G11C27/005 , G11C29/00 , G11C29/50 , G11C2029/5002 , G11C2211/5634
摘要： A method includes storing data in a group of analog memory cells by writing first storage values to the cells. After storing the data, second storage values are read from the cells using one or more first read thresholds. Third storage values that potentially cause cross-coupling interference in the second storage values are identified, and the third storage values are processed, to identify a subset of the second storage values as severely-interfered values. Fourth storage values are selectively re-read from the cells holding the severely-interfered values using one or more second read thresholds, different from the first read thresholds. The cross-coupling interference in the severely-interfered storage values is canceled using the re-read fourth storage values. The second storage values, including the severely-interfered values in which the cross-coupling interference has been canceled, are processed so as to reconstruct the data stored in the cell group.
摘要翻译：一种方法包括通过将第一存储值写入单元来将数据存储在一组模拟存储单元中。在存储数据之后，使用一个或多个第一读取阈值从单元读取第二存储值。识别潜在地在第二存储值中引起交叉耦合干扰的第三存储值，并且处理第三存储值，以将第二存储值的子集识别为严重干扰的值。使用与第一读取阈值不同的一个或多个第二读取阈值，从保持严重干扰值的单元有选择地重新读取第四存储值。使用重新读取的第四存储值来消除严重干扰的存储值中的交叉耦合干扰。处理包括交叉耦合干扰已被消除的严重干扰值的第二存储值，以便重构存储在小区组中的数据。

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