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1. 发明申请

US20170009374A1 SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译： SIC单晶及其制造方法
公开(公告)号：US20170009374A1
公开(公告)日：2017-01-12
申请号：US15195071
申请日：2016-06-28
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Takayuki SHIRAI
IPC分类号： C30B19/10 , C30B19/04 , C30B19/12 , H01L29/167 , C01B31/36 , H01L29/16 , H01L29/04 , C30B19/06 , C30B29/36
CPC分类号： C30B19/106 , C01B32/956 , C30B19/04 , C30B19/062 , C30B19/12 , C30B29/36
摘要： A p-type SiC single crystal having lower resistivity than the prior art is provided. This is achieved by a method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to grow a SiC single crystal, the method comprising: using as the Si—C solution a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al; and contacting a (0001) face of the SiC seed crystal substrate with the Si—C solution to grow a SiC single crystal from the (0001) face.
摘要翻译：提供具有比现有技术更低的电阻率的p型SiC单晶。这通过SiC单晶的制造方法来实现，其中SiC晶种基板与具有温度梯度的Si-C溶液接触，使得温度从内部朝向表面降低，生长SiC单晶，所述方法包括：使用Si-Cr和Al的Si-C溶液作为Si-C溶液，其中Al含量基于Si，Cr和Al的总和为3at％或更大; 并使SiC晶种衬底的（0001）面与Si-C溶液接触，从（0001）面生长SiC单晶。

2. 发明授权

US3093517A Intermetallic semiconductor body formation 失效
标题翻译：金属间半导体体形成
公开(公告)号：US3093517A
公开(公告)日：1963-06-11
申请号：US82397359
申请日：1959-06-30
申请人： IBM
发明人： LYONS VINCENT J
IPC分类号： C30B19/04 , C30B19/10 , C30B25/02 , C30B25/18 , H01L21/00 , H01L21/205 , H01L21/363 , H01L29/00
CPC分类号： H01L21/00 , C30B19/04 , C30B19/106 , C30B25/02 , C30B25/18 , C30B29/08 , C30B29/10 , H01L21/0237 , H01L21/02395 , H01L21/02521 , H01L21/02573 , H01L21/02631 , H01L29/00 , Y10S148/022 , Y10S148/065 , Y10S148/107 , Y10S148/17
摘要： 886,393. Coating with germanium. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 16, 1960 [June 30, 1959], No. 21142/60. Class 82(2). [Also in Group XXXVI] A semi-conductor device is made by epitaxially depositing germanium on a gallium arsenide substrate. The device may be produced in the apparatus shown, germanium source 6 and iodine 7 being heated to 550‹C. by coil 2a to form germanium iodide which decomposes on gallium arsenide substrate 5 (maintained at 420‹C. by coil 2b) to deposit germanium layer 9. Thus a diode may be produced by depositing P type germanium on N type gallium arsenide.

3. 发明授权

US3072507A Semiconductor body formation 失效
标题翻译：半导体体形成
公开(公告)号：US3072507A
公开(公告)日：1963-01-08
申请号：US82411559
申请日：1959-06-30
申请人： IBM
发明人： ANDERSON RICHARD L , MARINACE JOHN C , SILVEY GENE A
IPC分类号： C30B19/04 , C30B19/10 , C30B25/02 , C30B25/18 , H01L21/00 , H01L21/205 , H01L21/363 , H01L29/00
CPC分类号： H01L21/00 , C30B19/04 , C30B19/106 , C30B25/02 , C30B25/18 , C30B29/08 , C30B29/10 , H01L21/0237 , H01L21/02395 , H01L21/02521 , H01L21/02573 , H01L21/02631 , H01L29/00 , Y10S148/022 , Y10S148/065 , Y10S148/107 , Y10S148/17
摘要： 886,393. Coating with germanium. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 16, 1960 [June 30, 1959], No. 21142/60. Class 82(2). [Also in Group XXXVI] A semi-conductor device is made by epitaxially depositing germanium on a gallium arsenide substrate. The device may be produced in the apparatus shown, germanium source 6 and iodine 7 being heated to 550‹C. by coil 2a to form germanium iodide which decomposes on gallium arsenide substrate 5 (maintained at 420‹C. by coil 2b) to deposit germanium layer 9. Thus a diode may be produced by depositing P type germanium on N type gallium arsenide.

4. 发明授权

US09702057B2 Method for producing an n-type SiC single crystal from a Si—C solution comprising a nitride 有权
公开(公告)号：US09702057B2
公开(公告)日：2017-07-11
申请号：US14650664
申请日：2013-04-01
申请人： Takayuki Shirai
发明人： Takayuki Shirai
IPC分类号： C30B19/04 , C30B19/06 , C30B29/36 , C30B17/00 , C30B19/08 , C30B19/10 , C30B19/12
CPC分类号： C30B19/062 , C30B17/00 , C30B19/04 , C30B19/067 , C30B19/068 , C30B19/08 , C30B19/106 , C30B19/12 , C30B29/36
摘要： Provided is a method for producing an n-type SiC single crystal, whereby it is possible to grow an n-type SiC single crystal having a low resistivity at a high speed. A method for producing an n-type SiC single crystal by bringing a SiC seed crystal substrate into contact with a Si—C solution having such a temperature gradient that the temperature gradually decreases from the inside toward the surface, thereby achieving the crystal growth of the n-type SiC single crystal. The method involves adding a nitride to a raw material for forming the Si—C solution or to the Si—C solution.

5. 发明授权

US08101020B2 Crystal growth apparatus and manufacturing method of group III nitride crystal 有权
标题翻译：晶体生长装置及III族氮化物晶体的制造方法
公开(公告)号：US08101020B2
公开(公告)日：2012-01-24
申请号：US11546989
申请日：2006-10-13
申请人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
发明人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
IPC分类号： C30B9/00 , C30B11/00
CPC分类号： C30B9/12 , C30B9/00 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/062 , C30B19/106 , C30B29/40 , C30B29/403 , C30B29/406 , Y10T117/1092
摘要： A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.
摘要翻译：晶体生长装置包括保持含有碱金属和III族金属的熔融混合物的反应容器，向暴露于反应容器内的熔融混合物的容器空间供给氮源气体的供气装置，加热单元熔融混合物至晶体生长温度，以及支撑单元，其在熔融混合物内支撑III族氮化物晶体的籽晶。

6. 发明申请

US20070084399A1 Crystal growth apparatus and manufacturing method of group III nitride crystal 有权
标题翻译：晶体生长装置及III族氮化物晶体的制造方法
公开(公告)号：US20070084399A1
公开(公告)日：2007-04-19
申请号：US11546989
申请日：2006-10-13
申请人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
发明人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
IPC分类号： C30B11/00 , C30B9/00 , C30B17/00 , C30B21/02 , C30B28/06
CPC分类号： C30B9/12 , C30B9/00 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/062 , C30B19/106 , C30B29/40 , C30B29/403 , C30B29/406 , Y10T117/1092
摘要： A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.
摘要翻译：晶体生长装置包括保持含有碱金属和III族金属的熔融混合物的反应容器，向暴露于反应容器内的熔融混合物的容器空间供给氮源气体的供气装置，加热单元熔融混合物至晶体生长温度，以及支撑单元，其在熔融混合物内支撑III族氮化物晶体的籽晶。

7. 发明授权

US4532001A Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound 失效
标题翻译：单晶三元化合物的液相外延沉积工艺
公开(公告)号：US4532001A
公开(公告)日：1985-07-30
申请号：US452920
申请日：1982-12-27
申请人： Jean-Louis Benchimol , Maurice Quillec
发明人： Jean-Louis Benchimol , Maurice Quillec
IPC分类号： C30B19/00 , C30B19/04 , C30B19/10 , H01L21/208
CPC分类号： C30B19/04 , C30B19/106 , C30B29/40 , C30B29/48
摘要： Process for the liquid phase epitaxial deposition on a substrate of a ternary compound crystallizing in the same system as the substrate and complying with formula A.sub.x B.sub.n-x C.sub.m in which A, B and C are elements of the periodic classification of elements, n and m are integers, which can be the same or different, and x is between O and n, wherein said process comprises:(a) preparing an epitaxy bath by raising one of the elements A or B of the ternary compound and a stoichiometric solid binary compound of the two other elements of the ternary compound to a temperature such that there is formed with an excess of the said binary compound in the solid state, a liquid phase whose composition corresponds to the equilibrium with the solid phase A.sub.x B.sub.n-x C.sub.m,(b )contacting the bath with the substrate to be coated, and(c) depositing thereon, the ternary compound A.sub.x B.sub.n-x C.sub.m.
摘要翻译：在与基板相同的系统中结晶的三元化合物的衬底上的液相外延沉积的方法，并且符合式AxBn-xCm，其中A，B和C是元素周期性分类的元素，n和m是整数，其可以相同或不同，x在0和n之间，其中所述方法包括：（a）通过升高三元化合物的元素A或B中的一种和化学计量的固体二元化合物来制备外延浴三元化合物的另外两种元素形成为具有固体状态的过量的所述二元化合物的温度，其组成对应于与固相AxBn-xCm的平衡的液相，（b）使与待涂布的基材一起洗涤，和（c）在其上沉积三元化合物AxBn-xCm。

8. 发明授权

US4179317A Method for producing compound semiconductor crystals 失效
标题翻译：化合物半导体晶体的制造方法
公开(公告)号：US4179317A
公开(公告)日：1979-12-18
申请号：US909498
申请日：1978-05-25
申请人： Kazuo Sakai , Shigeyuki Akiba , Takaya Yamamoto
发明人： Kazuo Sakai , Shigeyuki Akiba , Takaya Yamamoto
IPC分类号： C30B19/00 , C30B19/02 , C30B19/04 , C30B19/10 , H01L21/208 , H01L33/30
CPC分类号： C30B29/40 , C30B19/04 , C30B19/106 , Y10S438/938
摘要： A method for producing III-V compound semiconductor crystals using a liquid phase epitaxial growth, in which the crystal growth is achieved in a state in which a single crystal of the same composition as a single crystal serving as a substrate for crystal precipitation is present in a melt for the liquid growth.
摘要翻译：一种使用液相外延生长制备III-V族化合物半导体晶体的方法，其中在与用作晶体沉淀的基底的单晶相同组成的单晶存在于其中存在晶体生长的状态下用于液体生长的熔体。

9. 发明授权

US3933539A Solution growth system for the preparation of semiconductor materials 失效
标题翻译：用于制备半导体材料的溶液生长系统
公开(公告)号：US3933539A
公开(公告)日：1976-01-20
申请号：US427861
申请日：1973-12-26
申请人： William W. Gartman
发明人： William W. Gartman
IPC分类号： C30B19/06 , C30B19/08 , C30B19/10 , H01L7/38
CPC分类号： C30B19/08 , C30B19/062 , C30B19/106 , Y10S438/915
摘要： The disclosure relates to a method and system for providing epitaxial solution growth of Group III-V compounds, one of which is gallium arsenide onto a substrate wherein the epitaxially grown layer is of uniform thickness over the substrate and the dopant is uniformly distributed throughout the epitaxially grown layer. This is accomplished, in accordance with one embodiment of the invention, by passing a hydrogen stream containing arsenic chloride vapor over the surface of a gallium arsenide-gallium melt wherein the substrate is immersed. The arsenic chloride is reduced to elemental arsenic and HCl, the latter reacting with the gallium to form gallium chloride which is volatile at the operating temperatures and is removed from the system. A saturated system of gallium arsenide in gallium is produced, some of the excess gallium arsenide depositing epitaxially on the substrate in solution. Any dopant would be placed in the melt and deposit along with the gallium arsenide on the substrate. The substrate is continually rotated to maintain substantially constant temperatures at the substrate and the immediately surrounding region.In accordance with a second embodiment of the invention, the substrate is lowered into a gallium melt saturated with or having an excess of gallium arsenide. When the substrate reaches the melt temperature, it is then externally cooled and maintained at a constant temperature with rotation in the melt, the substrate temperature being slightly below the melt temperature. Gallium arsenide will thus deposit from the melt onto the substrate, the gallium arsenide being continually replenished in the melt. A dopant can also be placed in the melt. The temperature differential between substrate and melt is maintained constant along the entire substrate.
摘要翻译：本公开涉及用于提供第III-V族化合物的外延生长的方法和系统，其中一种化合物是砷化镓到衬底上，其中外延生长层在衬底上具有均匀的厚度，并且掺杂剂均匀地分布在整个外延生长层根据本发明的一个实施例，通过将含有氯化亚铜蒸气的氢气流穿过其中浸渍基底的砷化镓 - 镓熔体的表面来实现。氯化砷被还原为元素砷和HCl，后者与镓反应形成氯化镓，其在操作温度下是挥发性的，并从体系中除去。产生镓中的砷化镓的饱和体系，在溶液中在衬底上外延沉积一些过量的砷化镓。任何掺杂剂将被放置在熔体中并与砷化镓一起沉积在衬底上。基板连续旋转以在基板和直接周围区域保持基本上恒定的温度。

10. 发明授权

US3899371A Method of forming PN junctions by liquid phase epitaxy 失效
标题翻译：通过液相外延形成PN结的方法
公开(公告)号：US3899371A
公开(公告)日：1975-08-12
申请号：US37346273
申请日：1973-06-25
申请人： RCA CORP
发明人： LADANY IVAN , CANNULI VINCENT MICHAEL
IPC分类号： C30B19/06 , C30B19/10 , H01L21/208 , H01L7/38
CPC分类号： C30B19/063 , C30B19/106 , H01L21/02543 , H01L21/02546 , H01L21/02625 , H01L21/02628
摘要： Two layers of a semiconductor material composed of three or more elements are deposited in succession by liquid phase epitaxy on a substrate. The layers may be of different conductivity types to form a PN junction therebetween. The layers are deposited from separate solutions containing the semiconductor material and a suitable dopant. During the deposition of the first layer from one of the solutions, both of the solutions are treated in the same manner so that the composition of the second layer is the same as that of the first layer at the junction between the layers.
摘要翻译：由三个或更多个元件组成的两层半导体材料通过衬底上的液相外延连续沉积。这些层可以具有不同的导电类型以在它们之间形成PN结。这些层从包含半导体材料和合适的掺杂剂的分离的溶液沉积。在从一种溶液沉积第一层期间，以相同的方式处理两种溶液，使得第二层的组成与层之间的连接处的第一层的组成相同。

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