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1. 发明授权

US08399289B2 Programmable polyelectrolyte electrical switches 有权
标题翻译：可编程聚电解质电开关
公开(公告)号：US08399289B2
公开(公告)日：2013-03-19
申请号：US12908338
申请日：2010-10-20
申请人： Oleksandr Sydorenko , Nikolai B. Zhitenev
发明人： Oleksandr Sydorenko , Nikolai B. Zhitenev
IPC分类号： H01L51/40
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/13
摘要： An apparatus includes a first solid electrode on a substrate, a polyelectrolyte layer over a part of the first solid electrode, a second solid electrode on a portion of the polyelectrolyte layer, and an anchoring layer on the part of the first solid electrode. The polyelectrolyte layer is either chemically bonded to the anchoring layer or has a thickness of less than about 20 nanometers.
摘要翻译：一种设备包括在基底上的第一固体电极，第一固体电极的一部分上的聚电解质层，聚电解质层的一部分上的第二固态电极，以及第一固体电极的一部分上的锚定层。聚电解质层化学键合到锚定层或具有小于约20纳米的厚度。

2. 发明授权

US07157750B2 Molecular memory device 有权
标题翻译：分子记忆装置
公开(公告)号：US07157750B2
公开(公告)日：2007-01-02
申请号：US10899873
申请日：2004-07-27
申请人： Vladimer Bulovic , Aaron Mandell , Andrew Perlman
发明人： Vladimer Bulovic , Aaron Mandell , Andrew Perlman
IPC分类号： H01L31/00
CPC分类号： G11C13/0009 , B82Y10/00 , G11C13/0014 , G11C2213/13 , G11C2213/77 , Y10S977/943
摘要： A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.
摘要翻译：提供了一种新颖的记忆单元，其具有包括分子系统中分子系统和分子系统分布的离子络合物的活性区域。布置一对写入电极用于将信息写入存储单元。有源区域响应于在一对写入电极之间施加的电场，用于在导通状态和断开状态之间切换。有源区在断开状态下具有高阻抗，在导通状态下具有低阻抗。一对读取电极用于检测有源区域是处于导通状态还是处于断开状态以从存储单元读取信息。读取电极可以由具有不同功函数的不同材料制成，以减少漏电流。

3. 发明申请

US20020163829A1 Memory switch 有权
标题翻译：内存开关
公开(公告)号：US20020163829A1
公开(公告)日：2002-11-07
申请号：US10139746
申请日：2002-05-07
申请人： Coatue Corporation
发明人： Vladimir Bulovic , Aaron Mandell , Andrew Perlman
IPC分类号： G11C013/00
CPC分类号： H01L51/0541 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C2213/13 , H01L29/685 , H01L51/0512 , H01L51/0558 , H01L51/0591 , H01L51/0595
摘要： A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.
摘要翻译：一种新颖的开关装置设置有布置在第一和第二电极之间的有源区，并且包括分布在系统中的分子系统和离子络合物。提供控制电极，用于控制施加到有源区域的电场，当具有预定极性和强度的电场施加预定时间时，该有源区域在高阻抗状态和低阻抗状态之间切换。

4. 发明申请

US20160111157A1 METHOD FOR READING A THIRD-DIMENSIONAL EMBEDDED RE-WRITEABLE NON-VOLATILE MEMORY AND REGISTERS 审中-公开
公开(公告)号：US20160111157A1
公开(公告)日：2016-04-21
申请号：US14985189
申请日：2015-12-30
申请人： III Holdings 1, LLC
发明人： Robert Norman
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C5/04 , G11C7/062 , G11C13/004 , G11C13/02 , G11C2013/0054 , G11C2013/009 , G11C2207/063 , G11C2213/13 , G11C2213/71
摘要： A non-volatile register includes register logic connected with first and second ends of a memory element. The register logic is positioned below the memory element. The memory element may be a two-terminal memory element configured to store data as a plurality of conductivity profiles that can be non-destructively determined by applying a read voltage across the two terminals. New data can be written to the two-terminal memory element by applying a write voltage of a predetermined magnitude and/or polarity across the two terminals. The two-terminal memory element retains stored data in the absence of power. A reference element including a structure that is identical or substantially identical to the two-terminal memory element may be used to generate a reference signal for comparisons during read operations.

5. 发明授权

US08218351B2 Non-volatile electrochemical memory device 有权
标题翻译：非挥发性电化学记忆装置
公开(公告)号：US08218351B2
公开(公告)日：2012-07-10
申请号：US12393255
申请日：2009-02-26
申请人： Didier Bloch , Carole Bourbon , Frédéric Le Cras , Antoine Nowodzinski
发明人： Didier Bloch , Carole Bourbon , Frédéric Le Cras , Antoine Nowodzinski
IPC分类号： G11C13/00
CPC分类号： G11C13/02 , G11C2213/13 , G11C2213/55
摘要： A non-volatile electrochemical memory cell formed of a stack of thin films comprising at least one first active layer, suited to releasing and accepting, in a reversible manner, at least one ion species, at least one second active layer, suited to releasing and accepting said ion species, in a reversible manner, the active layers being based on materials having different compositions and electrochemical potential profiles.
摘要翻译：一种非易失性电化学存储单元，由一叠薄膜组成，包括至少一个第一活性层，其适于以可逆方式释放和接受至少一种离子种类，至少一种第二活性层，适于释放和以可逆的方式接受所述离子物质，所述活性层基于具有不同组成和电化学电位分布的材料。

6. 发明申请

US20090196087A1 Non-volatile register 有权
标题翻译：非易失性寄存器
公开(公告)号：US20090196087A1
公开(公告)日：2009-08-06
申请号：US12012641
申请日：2008-02-05
申请人： Robert Norman
发明人： Robert Norman
IPC分类号： G11C11/21 , G11C7/00
CPC分类号： G11C13/0069 , G11C5/04 , G11C7/062 , G11C13/004 , G11C13/02 , G11C2013/0054 , G11C2013/009 , G11C2207/063 , G11C2213/13 , G11C2213/71
摘要： A non-volatile register is disclosed. The non-volatile register includes a memory element. The memory element comprises a first end and a second end. The non-volatile register includes a register logic connected with the first and second ends of the memory element. The register logic is positioned below the memory element. The memory element may be a two-terminal memory element configured to store data as a plurality of conductivity profiles that can be non-destructively determined by applying a read voltage across the two terminals. New data can be written to the two-terminal memory element by applying a write voltage of a predetermined magnitude and/or polarity across the two terminals. The two-terminal memory element retains stored data in the absence of power. A reference element including a structure that is identical or substantially identical to the two-terminal memory element may be used to generate a reference signal for comparisons during read operations.
摘要翻译：公开了一种非易失性寄存器。非易失性寄存器包括存储元件。存储元件包括第一端和第二端。非易失性寄存器包括与存储元件的第一和第二端相连的寄存器逻辑。寄存器逻辑位于存储器元件下方。存储器元件可以是被配置为将数据存储为可以通过在两个端子上施加读取电压而被非破坏性地确定的多个导电率分布的两端存储器元件。通过在两个端子上施加预定幅度和/或极性的写入电压，可以将新数据写入到两端存储元件。两端存储器元件在没有电源的情况下保留存储的数据。可以使用包括与两端存储元件相同或基本相同的结构的参考元件来产生用于在读取操作期间进行比较的参考信号。

7. 发明授权

US06844608B2 Reversible field-programmable electric interconnects 有权
标题翻译：可逆现场可编程电气互连
公开(公告)号：US06844608B2
公开(公告)日：2005-01-18
申请号：US10139381
申请日：2002-05-07
申请人： Vladimir Bulovic , Aaron Mandell , Andrew Perlman
发明人： Vladimir Bulovic , Aaron Mandell , Andrew Perlman
IPC分类号： G11C13/02 , H01L21/768 , H01L23/525 , H01L27/105 , H01L29/68 , H01L45/00 , H01L51/00 , G01N27/02 , H01L29/00
CPC分类号： G11C13/0009 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C2213/13 , G11C2213/15 , H01L21/76888 , H01L23/525 , H01L27/105 , H01L29/685 , H01L51/0595 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly programmable resistance. The material includes a molecular matrix with ionic complexes distributed through the molecular matrix. Application of an electrical field or electric current causes the molecular composite material to assume a desired resistivity (or conductivity) state. This state is retained by the molecular composite material to thus form a conductive or a non-conductive path between the electrical contacts.
摘要翻译：可编程互连结构及其操作方法提供了电触点之间的可编程互连。互连包括具有可逆可编程电阻的材料。该材料包括分子矩阵，其中离子配合物分布在分子基质上。施加电场或电流使得分子复合材料呈现期望的电阻率（或导电性）状态。该状态由分子复合材料保留，从而在电触点之间形成导电或不导电的路径。

8. 发明申请

US20100238713A1 Non-volatile register 有权
标题翻译：非易失性寄存器
公开(公告)号：US20100238713A1
公开(公告)日：2010-09-23
申请号：US12800289
申请日：2010-05-11
申请人： Robert Norman
发明人： Robert Norman
IPC分类号： G11C11/00 , G11C7/06
CPC分类号： G11C13/0069 , G11C5/04 , G11C7/062 , G11C13/004 , G11C13/02 , G11C2013/0054 , G11C2013/009 , G11C2207/063 , G11C2213/13 , G11C2213/71
摘要： A non-volatile register is disclosed. The non-volatile register includes a memory element. The memory element comprises a first end and a second end. The non-volatile register includes a register logic connected with the first and second ends of the memory element. The register logic is positioned below the memory element. The memory element may be a two-terminal memory element configured to store data as a plurality of conductivity profiles that can be non-destructively determined by applying a read voltage across the two terminals. New data can be written to the two-terminal memory element by applying a write voltage of a predetermined magnitude and/or polarity across the two terminals. The two-terminal memory element retains stored data in the absence of power. A reference element including a structure that is identical or substantially identical to the two-terminal memory element may be used to generate a reference signal for comparisons during read operations.
摘要翻译：公开了一种非易失性寄存器。非易失性寄存器包括存储元件。存储元件包括第一端和第二端。非易失性寄存器包括与存储元件的第一和第二端相连的寄存器逻辑。寄存器逻辑位于存储器元件下方。存储器元件可以是被配置为将数据存储为可以通过在两个端子上施加读取电压而被非破坏性地确定的多个导电率分布的两端存储器元件。通过在两个端子上施加预定幅度和/或极性的写入电压，可以将新数据写入到两端存储元件。两端存储器元件在没有电源的情况下保留存储的数据。可以使用包括与两端存储元件相同或基本相同的结构的参考元件来产生用于在读取操作期间进行比较的参考信号。

9. 发明授权

US07183141B1 Reversible field-programmable electric interconnects 有权
标题翻译：可逆现场可编程电气互连
公开(公告)号：US07183141B1
公开(公告)日：2007-02-27
申请号：US11026105
申请日：2004-12-30
申请人： Vladimir Bulovic , Aaron Mandell , Andrew Perlman
发明人： Vladimir Bulovic , Aaron Mandell , Andrew Perlman
IPC分类号： H01L21/82
CPC分类号： G11C13/0009 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C2213/13 , G11C2213/15 , H01L21/76888 , H01L23/525 , H01L27/105 , H01L29/685 , H01L51/0595 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly programmable resistance. The material includes a molecular matrix with ionic complexes distributed through the molecular matrix. Application of an electrical field or electric current causes the molecular composite material to assume a desired resistivity (or conductivity) state. This state is retained by the molecular composite material to thus form a conductive or a non-conductive path between the electrical contacts.
摘要翻译：可编程互连结构及其操作方法提供了电触点之间的可编程互连。互连包括具有可逆可编程电阻的材料。该材料包括分子矩阵，其中离子配合物分布在分子基质上。施加电场或电流使得分子复合材料呈现期望的电阻率（或导电性）状态。该状态由分子复合材料保留，从而在电触点之间形成导电或不导电的路径。

10. 发明授权

US07145793B1 Electrically addressable memory switch 失效
标题翻译：电可寻址存储器开关
公开(公告)号：US07145793B1
公开(公告)日：2006-12-05
申请号：US10873069
申请日：2004-06-21
申请人： Vladimir Bulovic , Aaron Mandell , Andrew Perlman
发明人： Vladimir Bulovic , Aaron Mandell , Andrew Perlman
IPC分类号： G11C13/00
CPC分类号： H01L51/0541 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C2213/13 , H01L29/685 , H01L51/0512 , H01L51/0558 , H01L51/0591 , H01L51/0595
摘要： A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.
摘要翻译：一种新颖的开关装置设置有布置在第一和第二电极之间的有源区，并且包括分布在系统中的分子系统和离子络合物。提供控制电极，用于控制施加到有源区域的电场，当具有预定极性和强度的电场施加预定时间时，该有源区域在高阻抗状态和低阻抗状态之间切换。

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