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    • 6. 发明申请
    • Method of Manufacturing Solar Cell Device and Solar Cell Device
    • 制造太阳能电池装置和太阳能电池装置的方法
    • US20110036394A1
    • 2011-02-17
    • US12866011
    • 2009-02-06
    • Koichiro NiiraTakehiro NishimuraNorikazu ItoShinichiro Inaba
    • Koichiro NiiraTakehiro NishimuraNorikazu ItoShinichiro Inaba
    • H01L31/105H01L31/18
    • H01L31/03921C23C16/4488C23C16/50H01L21/2257H01L31/03762H01L31/076H01L31/077H01L31/202Y02E10/548Y02P70/521
    • Provided is a superstrate type a-Si:H thin film solar cell of which the device characteristics are improved as compared with conventional ones. The solar cell device is manufactured by a process comprising depositing phosphorus on a transparent conductive film formed on a transparent substrate and sequentially forming a p-type layer, an i-type layer, and an n-type layer which are formed of a-Si:H on the transparent conductive film by a plasma CVD method. The phosphorus is deposited, for example, by plasmatization of phosphorus-containing gas. Alternatively, the phosphorus is deposited by etching a phosphorus source provided in a margin region where a plasma excitation voltage is applied but no transparent substrate is placed, with hydrogen plasma at the start of the formation of the p-type layer by the plasma CVD method. Preferably, the deposition of phosphorus is controlled so that the arithmetic average value (ΔCav) of the concentration difference between boron and phosphorus within a range of diffusion of boron in the i-type layer may be 1.1×1017(cm−3)≦ΔCav≦1.6×1017(cm−3) or less.
    • 提供与常规的相比,器件特性得到改善的覆盖型a-Si:H薄膜太阳能电池。 太阳能电池器件通过以下工艺制造,该方法包括在形成于透明衬底上的透明导电膜上沉积磷并依次形成由a-Si形成的p型层,i型层和n型层 :H通过等离子体CVD法在透明导电膜上。 磷例如通过含磷气体的等离子体化而沉积。 或者,通过蚀刻在施加等离子体激发电压的边缘区域而不设置透明衬底的磷源,通过等离子体CVD法形成p型层开始时的氢等离子体来沉积磷 。 优选地,控制磷的沉积,使得在i型层中的硼扩散范围内的硼和磷之间的浓度差的算术平均值(&Dgr; C av)可以是1.1×10 17(cm -3) ≦̸&Dgr; Cav≦̸ 1.6×1017(cm-3)以下。