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1. 发明申请

US20180102491A1 ORGANIC PHOTODETECTORS AND PRODUCTION METHOD THEREOF 审中-公开
公开(公告)号：US20180102491A1
公开(公告)日：2018-04-12
申请号：US15578500
申请日：2016-06-17
申请人： TECHNISCHE UNIVERSITÄT DRESDEN
发明人： Ji-Ling HOU , Axel FISCHER , Daniel KASEMANN , Sheng-Chieh YANG , Karl LEO
IPC分类号： H01L51/42 , H01L51/44
CPC分类号： H01L51/4206 , H01L27/305 , H01L51/428 , H01L51/441 , H01L51/447 , Y02E10/549
摘要： An organic photodetector for detecting infrared, visible and ultraviolet radiation is provided with a tunable spectral response to achieve a high responsivity at different design wavelengths. The organic photodetector comprises at least a substrate, a first electrode, a second electrode and at least one organic material, which is arranged between the first and the second electrodes, wherein a Schottky barrier is formed at the interface between the first electrode and the organic material and/or at the interface between the second electrode and the organic material. The tunability in the responsivity of the organic photodetector is achieved by structuring at least one electrode so that it comprises nano-apertures for exciting surface plasmon resonances.

2. 发明申请

US20170352492A1 GRAPHENE-SEMICONDUCTOR BASED WAVELENGTH SELECTIVE PHOTODETECTOR FOR SUB-BANDGAP PHOTO DETECTION 审中-公开
公开(公告)号：US20170352492A1
公开(公告)日：2017-12-07
申请号：US15614975
申请日：2017-06-06
申请人： THE UNIVERSITY OF HONG KONG
发明人： Jinyao Tang , Ze Xiong , Jiawei Chen
IPC分类号： H01G9/20 , G03F7/20 , G01J1/44 , G03F7/004 , H01G9/00 , H01L51/44 , H01L51/00 , H01L51/42
CPC分类号： H01G9/2059 , G01J1/44 , G03F7/0042 , G03F7/2059 , H01G9/0029 , H01G9/2045 , H01G9/209 , H01G9/2095 , H01L51/0003 , H01L51/0097 , H01L51/426 , H01L51/428 , H01L51/447 , H01L51/448 , Y02P70/521
摘要： Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the energy of photons meant to be detected.

3. 发明申请

US20160285020A1 FLOATING-GATE TRANSISTOR PHOTODETECTOR 有权
标题翻译：浮动栅极晶体管光电转换器
公开(公告)号：US20160285020A1
公开(公告)日：2016-09-29
申请号：US15091201
申请日：2016-04-05
申请人： NUtech Ventures
发明人： Jinsong Huang , Yongbo Yuan
IPC分类号： H01L51/42
CPC分类号： H01L51/428 , H01L31/1136 , H01L51/0052 , H01L51/0074 , H01L51/0545 , H01L51/055 , H01L51/447 , Y02E10/549 , Y02P70/521
摘要： A field effect transistor photodetector that can operate in room temperature includes a source electrode, a drain electrode, a channel to allow an electric current to flow between the drain and source electrodes, and a gate electrode to receive a bias voltage for controlling the current in the channel. The photodetector includes a light-absorbing material that absorbs light and traps electric charges. The light-absorbing material is configured to generate one or more charges upon absorbing light having a wavelength within a specified range and to hold the one or more charges. The one or more charges held in the light-absorbing material reduces the current flowing through the channel.
摘要翻译：可以在室温下工作的场效应晶体管光电检测器包括源电极，漏电极，允许电流在漏极和源极之间流动的通道，以及栅电极，以接收用于控制电流的偏置电压这个频道。光电检测器包括吸收光并捕获电荷的光吸收材料。光吸收材料被配置为在吸收波长在指定范围内的光并产生一个或多个电荷并保持一个或多个电荷。保持在光吸收材料中的一个或多个电荷减少了流过通道的电流。

4. 发明申请

US20150090998A1 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE DEVICE 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20150090998A1
公开(公告)日：2015-04-02
申请号：US14565212
申请日：2014-12-09
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Junji HIRASE , Yoshiyuki MATSUNAGA , Yoshihiro SATO
IPC分类号： H01L27/146 , H01L51/42
CPC分类号： H01L27/14614 , H01L27/1461 , H01L27/14612 , H01L27/1464 , H01L27/14641 , H01L27/14645 , H01L27/14669 , H01L51/428 , H04N5/363 , H04N5/378
摘要： Each unit pixel includes a photoelectric converter formed above a semiconductor region, an amplifier transistor formed in the semiconductor region, and including a gate electrode connected to the photoelectric converter, a reset transistor configured to reset a potential of the gate electrode, and an isolation region formed in the semiconductor region between the amplifier transistor and the reset transistor to electrically isolate the amplifier transistor from the reset transistor. The amplifier transistor includes a source/drain region. The source/drain region has a single source/drain structure.
摘要翻译：每个单位像素包括形成在半导体区域上方的光电转换器，形成在半导体区域中的放大器晶体管，并且包括连接到光电转换器的栅极电极，配置为复位栅电极的电位的复位晶体管，以及隔离区域形成在放大器晶体管和复位晶体管之间的半导体区域中，以将放大器晶体管与复位晶体管电隔离。放大器晶体管包括源极/漏极区域。源极/漏极区域具有单个源极/漏极结构。

5. 发明授权

US08951828B1 Thin-film electro devices based on derivatized poly(benao-isimidazobenzophenanthroline) ladder polymers 有权
标题翻译：基于衍生聚（苯乙酮 - 咪唑并苯并菲）梯度聚合物的薄膜电子器件
公开(公告)号：US08951828B1
公开(公告)日：2015-02-10
申请号：US13667063
申请日：2012-11-02
申请人： The United States of America as represented by the Secrectary of the Department of the Navy
发明人： William W. Lai , Alfred J. Baca
IPC分类号： H01L21/00 , H01L51/00 , H01G11/58 , H01G9/035 , H01L51/05 , B82Y10/00
CPC分类号： H01G9/2059 , B82Y10/00 , C08G69/30 , C08G73/20 , C09D179/04 , H01G9/2036 , H01G9/2068 , H01G9/2081 , H01G11/02 , H01G11/48 , H01G11/56 , H01L21/00 , H01L21/44 , H01L27/24 , H01L27/28 , H01L51/0003 , H01L51/0025 , H01L51/0035 , H01L51/0036 , H01L51/004 , H01L51/0044 , H01L51/0046 , H01L51/0048 , H01L51/0094 , H01L51/052 , H01L51/0545 , H01L51/055 , H01L51/0558 , H01L51/102 , H01L51/105 , H01L51/424 , H01L51/428 , H01L51/441 , H01L2251/301 , H01L2251/303 , Y02E10/549 , Y02E60/13 , Y02P70/521
摘要： A method for making electronic devices based on derivatized ladder polymer poly(benzo-isimidazobenzophenanthroline) (BBL) including photovoltaic modules and simple thin film transistors in planar and mechanically flexible and stretchable constructs.
摘要翻译：一种基于衍生梯度聚合物（苯并 - 咪唑基苯并菲啉）（BBL）制造电子器件的方法，包括光伏模块和简单的薄膜晶体管，其平面和机械柔性和可拉伸结构。

6. 发明申请

US20140231782A1 IMAGING DEVICE AND METHOD FOR MANUFACTURING IMAGING DEVICE 有权
标题翻译：成像装置和制造成像装置的方法
公开(公告)号：US20140231782A1
公开(公告)日：2014-08-21
申请号：US14263287
申请日：2014-04-28
申请人： FUJIFILM Corporation
发明人： Shinji IMAI , Toshihiro NAKATANI
IPC分类号： H01L27/30 , H01L51/44 , H01L51/42
CPC分类号： H01L27/307 , H01L51/428 , H01L51/448 , Y02E10/549 , Y02P70/521
摘要： An imaging device includes a substrate, lower electrodes formed on the substrate, an organic layer formed on the lower electrodes and generating electric charges in response to irradiation with light, an upper electrode formed on the organic layer and transmitting the light, a protective film formed on the upper electrode, and a patterned organic film formed on the protective film. The protective film is composed of at least one layer and has a total thickness of 30 to 500 nm. The protective film of a single layer type has an internal stress of −50 MPa to +60 MPa in the whole of the protective film.
摘要翻译：一种成像装置，包括基板，形成在基板上的下电极，形成在下电极上的有机层，并响应于照射而产生电荷;形成在有机层上的上电极，透过光，形成的保护膜在上电极上形成图案化的有机膜，形成在保护膜上。保护膜由至少一层构成，总厚度为30〜500nm。在整个保护膜中，单层型保护膜的内应力为-50MPa〜+ 60MPa。

7. 发明授权

US08405028B2 Method and apparatus for infrared detection and display 有权
标题翻译：用于红外线检测和显示的方法和装置
公开(公告)号：US08405028B2
公开(公告)日：2013-03-26
申请号：US12910473
申请日：2010-10-22
申请人： Franky So
发明人： Franky So
IPC分类号： G02F1/01
CPC分类号： H01L27/3227 , H01L27/288 , H01L27/307 , H01L51/0053 , H01L51/0081 , H01L51/0504 , H01L51/4213 , H01L51/428 , Y02E10/52 , Y02E10/549 , Y02P70/521
摘要： Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.
摘要翻译：本发明的实施例涉及用于红外（IR）检测的方法和装置。可以利用有机层产生用于检测IR辐射的光电晶体管。 IR检测器的波长范围可以通过掺入对不同波长的光子敏感的材料来修改。可以将与光电晶体管的吸收层的主体有机材料不同波长的光子敏感的材料的量子点结合到吸收层中，以增强具有与量子点的材料相关的波长的光子的吸收。可以使用光电导体结构来代替光电晶体管。光电导体可以并入PbSe或PbS量子点。光电导体可以掺入有机材料和OLED结构的一部分。可以向用户显示检测到的IR图像。可以使用有机材料来制造有机发光装置。

8. 发明授权

US08367001B2 Emissive sensors and devices incorporating these sensors 有权
标题翻译：结合这些传感器的发射传感器和设备
公开(公告)号：US08367001B2
公开(公告)日：2013-02-05
申请号：US12946685
申请日：2010-11-15
申请人： Timothy M. Swager , Shi-Wei Zhang
发明人： Timothy M. Swager , Shi-Wei Zhang
IPC分类号： G01N21/00
CPC分类号： C09K11/06 , B82Y10/00 , C09K2211/1092 , C09K2211/1408 , C09K2211/1425 , H01L51/0035 , H01L51/0043 , H01L51/0044 , H01L51/0052 , H01L51/0062 , H01L51/0071 , H01L51/0545 , H01L51/0595 , H01L51/428 , H01L51/5012 , Y02E10/549 , Y10T436/163333 , Y10T436/17 , Y10T436/20
摘要： The present invention generally relates to luminescent and/or optically absorbing compositions and/or precursors to those compositions, including solid films incorporating these compositions/precursors, exhibiting increased luminescent lifetimes, quantum yields, enhanced stabilities and/or amplified emissions. The present invention also relates to sensors and methods for sensing analytes through luminescent and/or optically absorbing properties of these compositions and/or precursors. Examples of analytes detectable by the invention include electrophiles, alkylating agents, thionyl halides, and phosphate ester groups including phosphoryl halides, cyanides and thioates such as those found in certain chemical warfare agents. The present invention additionally relates to devices and methods for amplifying emissions, such as those produced using the above-described compositions and/or precursors, by incorporating the composition and/or precursor within a polymer having an energy migration pathway. In some cases, the compositions and/or precursors thereof include a compound capable of undergoing a cyclization reaction.
摘要翻译：本发明一般涉及这些组合物的发光和/或光学吸收组合物和/或前体，包括掺入这些组合物/前体的固体膜，显示增加的发光寿命，量子产率，增强的稳定性和/或放大的发射。本发明还涉及通过这些组合物和/或前体的发光和/或光学吸收特性来感测分析物的传感器和方法。可通过本发明检测的分析物的实例包括亲电试剂，烷化剂，亚硫酰卤和磷酸酯基，包括磷酰卤，氰化物和硫酸盐，例如在某些化学战剂中发现的那些。本发明另外涉及通过将组合物和/或前体掺入具有能量迁移途径的聚合物中来扩大放射物的装置和方法，例如使用上述组合物和/或前体产生的那些。在一些情况下，其组合物和/或其前体包括能够经历环化反应的化合物。

9. 发明授权

US08293569B2 Organic thin film transistor array panel and method of manufacturing the same 失效
标题翻译：有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08293569B2
公开(公告)日：2012-10-23
申请号：US12889613
申请日：2010-09-24
申请人： Bo-Sung Kim , Mun-Pyo Hong , Woo-Jae Lee
发明人： Bo-Sung Kim , Mun-Pyo Hong , Woo-Jae Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/428 , H01L27/307 , H01L27/3244 , H01L51/0545 , H01L51/56 , Y02E10/549 , Y02P70/521
摘要： An organic thin film transistor (“TFT”) array panel includes a substrate, a gate line extending in a first direction, a data line extending in a second direction, intersecting with and insulated from the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, a pixel electrode connected to the drain electrode, and an organic semiconductor connected to the source electrode and the drain electrode, the organic semiconductor made of an organic material with photosensitivity.
摘要翻译：有机薄膜晶体管（TFT）阵列面板包括基板，沿第一方向延伸的栅极线，与栅极线交叉并与栅极线绝缘的第二方向延伸的数据线，连接到数据线的源电极，面向源电极的漏电极，连接到漏电极的像素电极以及连接到源极和漏电极的有机半导体，由具有感光性的有机材料制成的有机半导体。

10. 发明申请

US20110142717A1 EMISSIVE SENSORS AND DEVICES INCORPORATING THESE SENSORS 有权
标题翻译：包含这些传感器的EMISSIVE传感器和设备
公开(公告)号：US20110142717A1
公开(公告)日：2011-06-16
申请号：US12946685
申请日：2010-11-15
申请人： Timothy M. Swager , Tae-Hyun Kim , Shi-Wei Zhang
发明人： Timothy M. Swager , Tae-Hyun Kim , Shi-Wei Zhang
IPC分类号： G01N21/64 , C07D495/14 , C07D455/06 , C07D471/06 , C07D311/12
CPC分类号： C09K11/06 , B82Y10/00 , C09K2211/1092 , C09K2211/1408 , C09K2211/1425 , H01L51/0035 , H01L51/0043 , H01L51/0044 , H01L51/0052 , H01L51/0062 , H01L51/0071 , H01L51/0545 , H01L51/0595 , H01L51/428 , H01L51/5012 , Y02E10/549 , Y10T436/163333 , Y10T436/17 , Y10T436/20
摘要： The present invention generally relates to luminescent and/or optically absorbing compositions and/or precursors to those compositions, including solid films incorporating these compositions/precursors, exhibiting increased luminescent lifetimes, quantum yields, enhanced stabilities and/or amplified emissions. The present invention also relates to sensors and methods for sensing analytes through luminescent and/or optically absorbing properties of these compositions and/or precursors. Examples of analytes detectable by the invention include electrophiles, alkylating agents, thionyl halides, and phosphate ester groups including phosphoryl halides, cyanides and thioates such as those found in certain chemical warfare agents. The present invention additionally relates to devices and methods for amplifying emissions, such as those produced using the above-described compositions and/or precursors, by incorporating the composition and/or precursor within a polymer having an energy migration pathway. In some cases, the compositions and/or precursors thereof include a compound capable of undergoing a cyclization reaction.
摘要翻译：本发明一般涉及这些组合物的发光和/或光学吸收组合物和/或前体，包括掺入这些组合物/前体的固体膜，显示增加的发光寿命，量子产率，增强的稳定性和/或放大的发射。本发明还涉及通过这些组合物和/或前体的发光和/或光学吸收特性来感测分析物的传感器和方法。可通过本发明检测的分析物的实例包括亲电试剂，烷化剂，亚硫酰卤和磷酸酯基，包括磷酰卤，氰化物和硫酸盐，例如在某些化学战剂中发现的那些。本发明另外涉及通过将组合物和/或前体掺入具有能量迁移途径的聚合物中来扩大放射物的装置和方法，例如使用上述组合物和/或前体产生的那些。在一些情况下，其组合物和/或其前体包括能够经历环化反应的化合物。

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