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    • 4. 发明申请
    • Method of manufacturing and mounting electronic devices to limit the effects of parasitics
    • 制造和安装电子设备以限制寄生效应的方法
    • US20040163244A1
    • 2004-08-26
    • US10742916
    • 2003-12-23
    • Agere Systems Inc.
    • Linus Albert FetterYin-Huen WongMichael George Zierdt
    • H05K003/34
    • H03H9/172G01R31/2824H01L24/81H01L2224/8121H01L2224/81815H01L2924/01019H01L2924/14H03H3/02H03H9/02125Y10T29/42Y10T29/49144Y10T29/49155Y10T29/49156H01L2924/00
    • A method of producing and mounting electronic devices to negate the effects of parasitics on device performance. In one aspect, the substrate surface of the device is coated with a thin, etch-resistant film during fabrication that acts as a barrier to allow removal of substrate material beneath the film, creating a suspended structure upon which the remaining layers of circuitry rest. Alternatively the device is made with a film that is integral to the device, and that acts as the supporting membrane. To mount the device on a carrier or package, solder bumps are applied near the ends of the conductors of the device, and the die is then secured to a carrier or package, and positioned so that leads extending from the conductors mate up with bonding strips on the carrier or package. The solder bumps are then reflowed or melted to establish electrical connection between leads of the device and corresponding bonding strips of the carrier. The resultant electronic device is essentially immune to the effects or parasitic capacitances and parasitic inductances, with the device as mounted being further configured so as to tune out any residual parasitics which may still exist after fabrication.
    • 一种制造和安装电子设备以消除寄生效应对设备性能的方法。 在一个方面,在制造期间,器件的衬底表面涂覆有薄的耐蚀刻膜,其用作屏障以允许去除膜下方的衬底材料,产生悬挂结构,剩余的电路层在其上休息。 或者,该装置由与装置成一体的膜制成,并且用作支撑膜。 为了将器件安装在载体或封装上,焊料凸块在器件的导体的端部附近施加,然后将管芯固定到载体或封装上,并将其定位成使得从导体延伸的引线与接合条匹配 在载体或包装上。 焊料凸块然后被回流或熔化,以在器件的引线和载体的相应接合条之间建立电连接。 所得到的电子器件基本上免受影响或寄生电容和寄生电感的影响,安装的器件被进一步配置以便调出在制造之后可能仍然存在的任何残留寄生效应。
    • 5. 发明授权
    • Acoustic resonator filter with reduced electromagnetic influence due to die substrate thickness
    • 声谐振器滤波器,由于芯片基板的厚度而降低了电磁影响
    • US06377137B1
    • 2002-04-23
    • US09659254
    • 2000-09-11
    • Richard C. Ruby
    • Richard C. Ruby
    • H03H954
    • H03H9/02125H01L2224/48091H01L2224/48472H01L2224/73265H01L2924/16195H03H3/02H03H9/1014H03H9/564H03H2003/021Y10S438/959Y10T29/42H01L2924/00014
    • A plurality of acoustic resonators are manufactured in a batch process by forming cavities in a substrate and filling the cavities with a sacrificial layer. An FBAR membrane comprising a bottom electrode, a piezoelectric layer, and a top electrode is formed over each cavity and the sacrificial layer. The substrate is then thinned and the substrate is separated into a plurality of dice using a scribe and break process. The sacrificial layer is then removed and the FBAR filter is mounted in a package with thermal vias being thermal communication with underside of the FBAR filter. The production method improves thermal properties by increasing the efficiency of heat dissipation from the FBAR filter. In addition, electromagnetic interference is decreased by reducing the distance between a primary current flowing over the surface of the FBAR filter and an image current flowing in a ground plane beneath the FBAR filter.
    • 通过在衬底中形成空腔并用牺牲层填充空腔,以分批工艺制造多个声谐振器。 在每个空腔和牺牲层上形成包括底电极,压电层和顶电极的FBAR膜。 然后将基板变薄,并且使用划线和断裂工艺将基板分离成多个骰子。 然后去除牺牲层,并且FBAR过滤器安装在具有与FBAR过滤器的下侧热连通的热通孔的封装中。 该生产方法通过提高FBAR过滤器的散热效率来改善热性能。 此外,通过减少在FBAR滤波器的表面上流过的初级电流与在FBAR滤波器下面的接地平面中流动的图像电流之间的距离减小电磁干扰。
    • 8. 发明授权
    • Thin-film piezoelectric resonator, filter and voltage-controlled oscillator
    • 薄膜压电谐振器,滤波器和压控振荡器
    • US07525399B2
    • 2009-04-28
    • US11376266
    • 2006-03-16
    • Naoko YanaseKenya SanoTakaaki YasumotoRyoichi OharaKazuhiko Itaya
    • Naoko YanaseKenya SanoTakaaki YasumotoRyoichi OharaKazuhiko Itaya
    • H03H9/54H03H9/15
    • H03H3/02H03H9/02125H03H9/02157H03H9/564H03H9/568H03H2003/023H03H2003/025
    • A thin-film piezoelectric resonator includes a substrate, and first and second excitation portions. The substrate includes first and second cavities. The first excitation portion is disposed over the first cavity, and includes a first electrode, a first piezoelectric material and a second electrode laminated successively. An overlapping region among the first electrode, the first piezoelectric material and the second electrode defines a contour of a periphery of the first excitation portion. A first distance is defined as a distance from an end of the first excitation portion to an opening end of the first cavity. The second excitation portion is disposed over the second cavity, and includes a third electrode, a second piezoelectric material and a fourth electrode laminated successively. A second distance is defined as a distance from an end of the second excitation portion to an opening end of the second cavity and different from the first distance.
    • 薄膜压电谐振器包括基板以及第一和第二激励部分。 衬底包括第一和第二腔。 第一激励部分设置在第一腔上方,并且包括依次层压的第一电极,第一压电材料和第二电极。 第一电极,第一压电材料和第二电极之间的重叠区域限定第一激励部分的周边的轮廓。 第一距离被定义为从第一激励部分的端部到第一腔体的开口端的距离。 第二激励部分设置在第二腔上,并且包括依次层压的第三电极,第二压电材料和第四电极。 第二距离被定义为从第二激励部分的端部到第二腔体的开口端的距离,并且与第一距离不同。
    • 9. 发明授权
    • Film bulk acoustic resonator and method for manufacturing the same
    • 薄膜体声波谐振器及其制造方法
    • US07321183B2
    • 2008-01-22
    • US10890989
    • 2004-07-15
    • Yasuo EbuchiTakako MotaiKenya Sano
    • Yasuo EbuchiTakako MotaiKenya Sano
    • H01L41/053H01L41/083
    • H03H9/172H03H3/02H03H9/02125H03H9/02133H03H9/173H03H9/587
    • A film bulk acoustic resonator, includes first to fourth insulator patterns disposed apart from each other. The third and fourth insulator patterns are disposed opposite the second and first insulator patterns in relation to the first and second insulating patterns, respectively. A bottom conductive layer is disposed above the first and third insulator patterns spreading from a region between the first and second insulator patterns to the third insulator pattern. A piezoelectric film is provided on the bottom conductive layer, disposed above the region between the first and second insulating patterns. A top conductive layer is facing the bottom conductive layer so as to sandwich the piezoelectric film, spreading from the region between the first and second insulator patterns to the fourth insulator pattern.
    • 薄膜体声波谐振器包括彼此分开布置的第一至第四绝缘体图案。 第三绝缘体图案和第四绝缘体图案分别相对于第一和第二绝缘图案与第二和第一绝缘体图案相对设置。 底部导电层设置在从第一和第二绝缘体图案之间的区域延伸到第三绝缘体图案的第一和第三绝缘体图案之上。 在底部导电层上设置压电薄膜,设置在第一和第二绝缘图案之间的区域之上。 顶部导电层面向底部导电层,以夹持压电膜,从第一和第二绝缘体图案之间的区域延伸到第四绝缘体图案。