专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20180347029A1 MICRO EVAPORATOR, OSCILLATOR INTEGRATED MICRO EVAPORATOR STRUCTURE AND FREQENCY CORRECTON METHOD THEREOF 审中-公开
公开(公告)号：US20180347029A1
公开(公告)日：2018-12-06
申请号：US15774590
申请日：2016-01-06
申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
发明人： HENG YANG , WEILONG YOU , LEI ZHANG , XIAOFEI WANG , XINXIN LI
IPC分类号： C23C14/24 , H03H9/24 , H03B1/02 , H01L21/02
CPC分类号： H01L21/203 , H03H9/24
摘要： The present invention provides a micro evaporator, an oscillator integrated micro evaporator structure and a frequency correction method thereof. The micro evaporator comprises a micro evaporation platform, anchor points, supporting beams and metal electrodes, wherein one surface of the micro evaporation platform is an evaporation surface; the anchor points are located on two sides of the micro evaporation platform and have a certain distance to the micro evaporation platform; the supporting beams are located between the micro evaporation platform and the anchor points, one end of each supporting beam is connected with the micro evaporation platform and the other end is connected with the anchor point; the size of each supporting beam satisfies the following relation: T=P(L/2kbh)+Ta; and the metal electrodes are located on first surfaces of the anchor points.

2. 发明授权

US10062494B2 Apparatus with 3D inductors 有权
公开(公告)号：US10062494B2
公开(公告)日：2018-08-28
申请号：US14929608
申请日：2015-11-02
申请人： RF Micro Devices, Inc.
发明人： Dirk Robert Walter Leipold , George Maxim , Marcus Granger-Jones , Baker Scott
IPC分类号： H01F27/28 , H01F17/00 , H04J1/08 , H03H7/46 , H03H7/38 , H04B1/40
CPC分类号： H01F27/2804 , H01F2027/2809 , H01L21/0276 , H01L28/10 , H01P7/06 , H01P7/065 , H01P7/08 , H03H7/38 , H03H7/463 , H03H9/24 , H04B1/40 , H04J1/08
摘要： Embodiments of an apparatus are disclosed that includes a first three dimensional (3D) inductor and a second 3D inductor. The first three dimensional (3D) inductor has a first conductive path shaped as a first two dimensional (2D) lobe laid over a first 3D volume. In addition, the second 3D inductor has a second conductive path, wherein the second 3D inductor is inserted into the first 3D inductor so that the second conductive path at least partially extends through the first 3D volume. Since second 3D inductor is inserted into the first 3D inductor, the 3D inductors may be coupled to one another. Depending on orientation and distances of structures provided by the 3D inductors, the 3D inductors may be weakly or moderately coupled.

3. 发明授权

US09831192B2 Cavity formation in semiconductor devices 有权
公开(公告)号：US09831192B2
公开(公告)日：2017-11-28
申请号：US15154583
申请日：2016-05-13
申请人： SKYWORKS SOLUTIONS, INC.
发明人： David T. Petzold , David Scott Whitefield
IPC分类号： H01L21/84 , H01L23/00 , H01L27/12 , H01L23/66 , H03H9/24 , H01L21/764 , H01L21/768 , H01L23/528 , H01L49/02 , H01L29/06 , H01L29/78 , H04B1/40 , H01L21/306 , H01L23/535 , H01L29/66 , H01L29/786 , H04B1/44 , H01L21/683 , H01L25/16 , H01L23/31
CPC分类号： H01L23/562 , H01L21/30604 , H01L21/6835 , H01L21/76251 , H01L21/764 , H01L21/768 , H01L21/76802 , H01L21/76877 , H01L21/76895 , H01L21/76898 , H01L21/84 , H01L23/3121 , H01L23/5283 , H01L23/535 , H01L23/66 , H01L24/05 , H01L24/06 , H01L24/48 , H01L24/73 , H01L25/16 , H01L27/1203 , H01L27/20 , H01L28/10 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/786 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68359 , H01L2221/68368 , H01L2223/6677 , H01L2224/03 , H01L2224/03002 , H01L2224/04042 , H01L2224/05554 , H01L2224/06135 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/94 , H01L2924/00014 , H01L2924/1306 , H01L2924/1421 , H01L2924/15192 , H01L2924/15313 , H03H9/02566 , H03H9/24 , H04B1/40 , H04B1/44 , H01L2224/45099
摘要： Fabricating of radio-frequency (RF) devices involve providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying a sacrificial material to the backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, the interface material at least partially covering the sacrificial material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.

4. 发明申请

US20170317662A1 Resonator And Filter With Resonator 审中-公开
公开(公告)号：US20170317662A1
公开(公告)日：2017-11-02
申请号：US15496205
申请日：2017-04-25
申请人： Tesat-Spacecom GmbH & Co. KG
发明人： Tobias Kaesser
IPC分类号： H03H9/24 , H03H9/46 , H03H3/007
CPC分类号： H01P1/207 , H01P7/06 , H03H3/007 , H03H9/24 , H03H9/46
摘要： A resonator, in particular a high-frequency resonator, includes a resonator housing with a resonator space formed therein and a container with a cavity in which a liquid crystal is accommodated, wherein the container is at least partially arranged in the resonator space and includes an electrode configuration for generating an electric control field for controlling the permittivity of the liquid crystal.

5. 发明申请

US20170125656A1 PHONONIC METAMATERIALS COMPRISING ATOMICALLY DISORDERED RESONATORS 审中-公开
公开(公告)号：US20170125656A1
公开(公告)日：2017-05-04
申请号：US15289921
申请日：2016-10-10
申请人： The Regents of the University of Colorado a body corporate
发明人： Mahmoud I. Hussein
IPC分类号： H01L35/04 , H01L35/14 , H01L35/30 , H03H9/24 , G10K11/04 , G10K11/172
CPC分类号： H01L35/04 , B82Y20/00 , B82Y30/00 , G02B1/002 , G02B1/005 , G10K11/04 , G10K11/172 , H01L35/14 , H01L35/26 , H01L35/30 , H03H9/24 , H03H9/2405 , H03H2009/155 , Y10S977/833 , Y10S977/932
摘要： Phononic metamaterials and methods for reducing the group velocities and the thermal conductivity in at least partially crystalline base material are provided, such as for thermoelectric energy conversion. In one implementation, a method for reducing thermal conductivity through an at least partially crystalline base material is provided. In another implementation, a phononic metamaterial structure is provided. The phononic metamaterial structure in this implementation includes: an at least partially crystalline base material configured to allow a plurality of phonons to move to provide thermal conduction through the base material; and at least one disordered (e.g., amorphous) material coupled (e.g., as an inclusion, extending substructure, outer matrix, a coating to heavy inner inclusion, etc.) to the at least partially crystalline base material. The at least one disordered material is configured to generate at least one vibration mode by the oscillation of at least one atom within the disordered material to interact with the plurality of phonons moving within the base material and slow group velocities of at least a portion of the interacting phonons and reduce thermal conductivity through the base material.

6. 发明申请

US20170033758A9 TUNABLE DUAL-BAND BAND-PASS FILTER 有权
标题翻译：双通道带通滤波器
公开(公告)号：US20170033758A9
公开(公告)日：2017-02-02
申请号：US14808183
申请日：2015-07-24
申请人： UNIVERSITY OF YAMANASHI , THE JAPAN STEEL WORKS, LTD.
发明人： Naoto SEKIYA , Katsuhiro TERAO , Kazuhito KISHIDA , Yasuo SATO , Noritaka KITADA
IPC分类号： H03H7/01 , H03H9/24
CPC分类号： H01P1/20309 , H01P1/20372 , H01P7/082 , H01P7/088 , H01P7/105 , H03H7/0161 , H03H9/24 , H03H2210/028
摘要： A tunable dual-band resonator and a tunable dual-band band-pass filter using the tunable dual-band resonator. The dual-band resonator is structured such that a stub is added to each half-wavelength resonator provided with half-wavelength resonator protrusions (capacity-component adjust parts). The dual-band resonator is made up of an odd-number mode resonator in a shape including a ground conductor disposed on the back surface of a dielectric body, and a strip conductor disposed on the top surface thereof, and an even-number mode resonator in such a shape as to be formed when the stub is connected to an end face on the opposite side of the open-end of the strip, characterized in that a dielectric rod circular in cross section is provided in the space above the respective stubs, and another dielectric rod circular in cross section is provided in the space above the half-wavelength resonator protrusions.
摘要翻译：可调谐双频带谐振器和可调谐双频带通滤波器，使用可调谐双频带谐振器。双频带谐振器被构造为使得将短截线添加到具有半波长谐振器突起（电容分量调整部件）的每个半波长谐振器。双波段谐振器由奇数模式谐振器构成，其形状包括布置在电介质体的背面上的接地导体和设置在其顶表面上的条状导体，以及偶数模式谐振器当该短截线连接到条带的开口端的相对侧上的端面时形成为这样的形状，其特征在于，在所述短截线上方的空间中设置横截面为圆形的介质棒，并且在半波长谐振器突起上方的空间中设置有横截面圆形的另一介质棒。

7. 发明申请

US20160336214A1 CAVITY FORMATION IN INTERFACE LAYER IN SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件界面层的形成
公开(公告)号：US20160336214A1
公开(公告)日：2016-11-17
申请号：US15154777
申请日：2016-05-13
申请人： SKYWORKS SOLUTIONS, INC.
发明人： David T. PETZOLD , David Scott WHITEFIELD
IPC分类号： H01L21/764 , H01L23/00 , H01L23/528 , H04B1/40 , H01L21/768 , H01L25/16 , H01L49/02 , H01L29/06 , H01L29/78
CPC分类号： H01L23/562 , H01L21/30604 , H01L21/6835 , H01L21/76251 , H01L21/764 , H01L21/768 , H01L21/76802 , H01L21/76877 , H01L21/76895 , H01L21/76898 , H01L21/84 , H01L23/3121 , H01L23/5283 , H01L23/535 , H01L23/66 , H01L24/05 , H01L24/06 , H01L24/48 , H01L24/73 , H01L25/16 , H01L27/1203 , H01L27/20 , H01L28/10 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/786 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68359 , H01L2221/68368 , H01L2223/6677 , H01L2224/03 , H01L2224/03002 , H01L2224/04042 , H01L2224/05554 , H01L2224/06135 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/94 , H01L2924/00014 , H01L2924/1306 , H01L2924/1421 , H01L2924/15192 , H01L2924/15313 , H03H9/02566 , H03H9/24 , H04B1/40 , H04B1/44 , H01L2224/45099
摘要： Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET), forming one or more electrical connections to the FET, forming one or more dielectric layers over at least a portion of the electrical connections, and disposing an electrical element at least partially above the one or more dielectric layers, the electrical element being in electrical communication with the FET via the one or more electrical connections. RF device fabrication further involves applying an interface material over at least a portion of the one or more dielectric layers, removing at least a portion of the interface material to form a trench above at least a portion of the electrical element, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity, the electrical element being disposed at least partially within the cavity.
摘要翻译：射频（RF）器件的制造涉及提供场效应晶体管（FET），形成与FET的一个或多个电连接，在电连接的至少一部分上形成一个或多个电介质层，并且设置电气元件至少部分地在所述一个或多个电介质层之上，所述电气元件经由所述一个或多个电连接与所述FET电连通。 RF器件制造还包括在一个或多个电介质层的至少一部分上施加界面材料，去除界面材料的至少一部分以在电元件的至少一部分上方形成沟槽，并且覆盖至少一个所述界面材料的一部分和所述沟槽具有基底层以形成空腔，所述电气元件至少部分地设置在所述空腔内。

8. 发明授权

US09397285B2 Junctionless nano-electro-mechanical resonant transistor 有权
标题翻译：无结合纳米机电谐振晶体管
公开(公告)号：US09397285B2
公开(公告)日：2016-07-19
申请号：US14395626
申请日：2013-04-19
申请人： ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
发明人： Sebastian Thimotee Bartsch , Mihai Adrian Ionescu
IPC分类号： H01L41/09 , H01L41/113 , H01H59/00 , B82Y15/00 , H03H9/02 , H03H9/24 , B81B3/00
CPC分类号： H01L41/0966 , B81B3/0021 , B81B2201/01 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2201/0271 , B81B2201/0278 , B82Y15/00 , H01H59/0009 , H01L41/0933 , H01L41/1134 , H03H9/02259 , H03H9/24 , H03H9/2463 , H03H2009/02314
摘要： A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed gate electrode arranged to control a depletion charge in the highly doped conductive channel thereby modulating dimensions of a cross-section of the highly doped conductive channel. A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode to the highly doped conductive channel, is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel is achievable with the control of the fixed gate electrode.
摘要翻译：一种无连接纳米机电（NEM）谐振器，包括连接漏极区域和源极区域的高度掺杂的导电沟道; 导电沟道区域是可移动的，并且整个结构至少固定在放置在源极和漏极区域上的这两个端点处; 至少一个固定栅极布置成控制高掺杂导电沟道中的耗尽电荷，从而调制高度掺杂的导电沟道的横截面的尺寸。在从固定栅电极到高度掺杂的导电沟道取向的电场方向上的横截面的尺寸被设计成使得其可以在耗尽电荷的作用下减小，使得通过固定栅电极的控制可以实现高掺杂导电沟道中的全部耗尽。

9. 发明申请

US20150155850A1 ELASTIC WAVE FILTER DEVICE AND DUPLEXER 有权
标题翻译：弹性波滤波器和双工器
公开(公告)号：US20150155850A1
公开(公告)日：2015-06-04
申请号：US14615503
申请日：2015-02-06
申请人： Murata Manufacturing Co., Ltd.
发明人： Takuma KUZUSHITA , Yasumasa TANIGUCHI , Takashi MIYAKE
IPC分类号： H03H9/24
CPC分类号： H03H9/0576 , H03H7/463 , H03H9/0566 , H03H9/24 , H03H9/25 , H03H9/542 , H03H9/568 , H03H9/605 , H03H9/6483 , H03H9/706 , H03H9/725 , H03H2001/0085
摘要： In an elastic wave filter device, an elastic wave filter element chip is mounted on a board. In the elastic wave filter element chip, a ladder filter including a plurality of series arm resonators and a plurality of parallel arm resonators are provided. In/on the board, a first inductor connected in parallel to the series arm resonator and a second inductor connected between the parallel arm resonators P1-P3 and a ground potential are provided. In/on the board, a shield electrode is located between the first inductor and the second inductor.
摘要翻译：在弹性波滤波器装置中，弹性波滤波器元件芯片安装在板上。在弹性波滤波器元件芯片中，设置有包括多个串联臂谐振器和多个并联臂谐振器的梯形滤波器。在板上，提供与串联臂谐振器并联连接的第一电感器和连接在并联臂谐振器P1-P3和接地电位之间的第二电感器。在板上，屏蔽电极位于第一电感器和第二电感器之间。

10. 发明申请

US20150097632A1 VIBRATOR, OSCILLATOR, ELECTRONIC DEVICE, AND MOVING OBJECT 审中-公开
标题翻译：振动器，振荡器，电子设备和移动对象
公开(公告)号：US20150097632A1
公开(公告)日：2015-04-09
申请号：US14505579
申请日：2014-10-03
申请人： Seiko Epson Corporation
发明人： Akinori YAMADA
IPC分类号： H03H9/24 , H02N1/00 , H03B5/30 , B81B3/00
CPC分类号： H02N1/006 , H03H9/24
摘要： A MEMS vibrator includes: a base portion; a plurality of vibration reeds which extends from the base portion; a supporting portion which extends from a vibration node portion of the base portion; a fixing portion which is connected with the supporting portion; and a substrate in which the fixing portion is disposed on a main surface. The plurality of vibration reeds is separated from the substrate.
摘要翻译： MEMS振动器包括：基部; 从所述基部延伸的多个振动片; 支撑部，其从所述基部的振动节部延伸; 与所述支撑部连接的固定部; 以及其中固定部分设置在主表面上的基板。多个振动片与基板分离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式