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    • 1. 发明授权
    • Metal pattern and process for producing the same
    • 金属图案及其制造方法
    • US07658860B2
    • 2010-02-09
    • US10568158
    • 2005-01-13
    • Tohru Nakagawa
    • Tohru Nakagawa
    • C03C15/00C03C25/68C25F3/00
    • C25D5/022C23F1/02C23F1/14C23F1/18C23F1/30C23F1/40H01L21/0332H01L21/0337H01L21/32139H01L51/0019H01L51/0022H05K3/061H05K2201/015H05K2201/0239H05K2203/013H05K2203/0582H05K2203/0585H05K2203/122
    • A metal pattern of the present invention is a metal pattern (13′) formed on a surface of a substrate by etching, and a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n—, where n represents an integer) is formed on a surface of a metal film composing the metal pattern (13′), and a masking film (18) is formed by penetration of a molecule having a mercapto group (—SH) or a disulfide (—SS—) group into interstices between molecules composing the monomolecular film. The metal pattern is produced by: forming a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n—, where n represents an integer) on a surface of a metal film; forming a masking film by applying a solution in which a molecule having a mercapto group (—SH) or a disulfide (—SS—) group is dissolved over a surface of the monomolecular film so that the molecule having a mercapto group (—SH) or a disulfide (—SS—) group penetrates in interstices between molecules composing the monomolecular film; and etching the metal film by exposing the surface of the metal film to an etching solution so that a portion of the metal film in a region not covered with the masking film is removed.
    • 本发明的金属图案是通过蚀刻形成在基板的表面上的金属图案(13'),并且含有氟化烷基链(CF 3(CF 2)n - ,其中n表示整数)的单分子膜形成在 构成金属图案(13')的金属膜的表面和通过将具有巯基(-SH)或二硫化物(-SS-))基团的分子渗入分子之间的分子形成掩蔽膜(18) 组成单分子膜。 金属图案通过在金属膜的表面上形成含有氟化烷基链(CF 3(CF 2)n - ,其中n表示整数)的单分子膜; 通过将分子中具有巯基(-SH)或二硫键(-SS-))的分子溶解在单分子膜的表面上形成掩蔽膜,使得具有巯基的分子(-SH) 或二硫化物(-SS-)基团穿透构成单分子膜的分子之间的间隙; 并且通过将金属膜的表面暴露于蚀刻溶液来蚀刻金属膜,从而去除未被掩模膜覆盖的区域中的金属膜的一部分。
    • 2. 发明申请
    • Metal pattern and process for producing the same
    • 金属图案及其制造方法
    • US20090139421A1
    • 2009-06-04
    • US10568158
    • 2005-01-13
    • Tohru Nakagawa
    • Tohru Nakagawa
    • B41N3/00
    • C25D5/022C23F1/02C23F1/14C23F1/18C23F1/30C23F1/40H01L21/0332H01L21/0337H01L21/32139H01L51/0019H01L51/0022H05K3/061H05K2201/015H05K2201/0239H05K2203/013H05K2203/0582H05K2203/0585H05K2203/122
    • A metal pattern of the present invention is a metal pattern (13′) formed on a surface of a substrate by etching, and a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n—, where n represents an integer) is formed on a surface of a metal film composing the metal pattern (13′), and a masking film (18) is formed by penetration of a molecule having a mercapto group (—SH) or a disulfide (—SS—) group into interstices between molecules composing the monomolecular film. The metal pattern is produced by: forming a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n—, where n represents an integer) on a surface of a metal film; forming a masking film by applying a solution in which a molecule having a mercapto group (—SH) or a disulfide (—SS—) group is dissolved over a surface of the monomolecular film so that the molecule having a mercapto group (—SH) or a disulfide (—SS—) group penetrates in interstices between molecules composing the monomolecular film; and etching the metal film by exposing the surface of the metal film to an etching solution so that a portion of the metal film in a region not covered with the masking film is removed.
    • 本发明的金属图案是通过蚀刻形成在基板的表面上的金属图案(13'),并且含有氟化烷基链(CF 3(CF 2)n - ,其中n表示整数)的单分子膜形成在 构成金属图案(13')的金属膜的表面和通过将具有巯基(-SH)或二硫化物(-SS-))基团的分子渗入分子之间的分子形成掩蔽膜(18) 组成单分子膜。 金属图案通过在金属膜的表面上形成含有氟化烷基链(CF 3(CF 2)n - ,其中n表示整数)的单分子膜; 通过将分子中具有巯基(-SH)或二硫键(-SS-))的分子溶解在单分子膜的表面上形成掩蔽膜,使得具有巯基的分子(-SH) 或二硫化物(-SS-)基团穿透构成单分子膜的分子之间的间隙; 并且通过将金属膜的表面暴露于蚀刻溶液来蚀刻金属膜,从而去除未被掩模膜覆盖的区域中的金属膜的一部分。