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    • 7. 发明申请
    • THREE TERMINAL SEMICONDUCTOR DEVICE WITH VARIABLE CAPACITANCE
    • 具有可变电容的三端子半导体器件
    • US20140232451A1
    • 2014-08-21
    • US13770005
    • 2013-02-19
    • QUALCOMM INCORPORATED
    • Ranadeep Dutta
    • H01L29/93G05B99/00
    • H01L29/93H01L27/0808H01L29/66174H01L29/66181H01L29/945
    • Methods and apparatus for implementing variable, e.g., tunable, 3 terminal capacitance devices are described. In various embodiments vertical control pillars spaced apart from one another extend in a well having an opposite polarity than the polarity of the control pillars. The control pillars are arranged in a line that extends parallel to but between a deep trench gate and a well pickup. By varying the voltage applied to the control pillars the size of the depletion zone around the pillars can be varied resulting in a change in capacitance between the trench gate and pickup terminal connected to the well pickup. The generally vertical nature of the control pillars facilities control over a wide range of voltages while allowing for manufacturing using common semiconductor manufacturing steps making the device easy to implement on a chip with other semiconductor devices.
    • 描述了实现可变的,例如可调谐的3端子电容器件的方法和装置。 在各种实施例中,彼此间隔开的垂直控制柱在具有与控制柱的极性相反的极性的井中延伸。 控制柱布置成平行于深沟槽栅极和阱拾取器之间延伸的线。 通过改变施加到控制柱的电压,可以改变柱周围的耗尽区的尺寸,导致沟槽栅极和连接到阱拾取器的拾取端之间的电容变化。 控制支柱设施的大体上垂直的特性控制在宽范围的电压,同时允许使用通用的半导体制造步骤的制造,使得器件易于与其他半导体器件在芯片上实现。